Metal/dielectric transmission interference filters with low reflectance. 2. Experimental results

The successful fabrication of metal/dielectric multilayer filters requires not only accurate control of the individual layer thicknesses, but also a good knowledge of the optical constants of the materials used in the filters. In the case of metal films, it is also essential to know whether any transition layers are formed at the interfaces and, if so, how their thicknesses and optical constants depend on the deposition conditions. An automatic, real-time process control, magnetron sputtering deposition system was modified to permit the manufacture of metal/dielectric filters using optical monitoring techniques. To illustrate the performance of this system, two bandpass filters, a short-wavelength pass filter, and a neutral density filter were produced, all having a low reflectance for light incident on one side. The metal layers used in these filters consisted of either Ni or Ag. TheAg films could be protected from the O(2) plasma using thin Ni or Si films. Good agreement was obtained between the calculated and measured spectral transmittance and reflectance curves.     

Conference Notices

Non-polarizing beam splitters made out of lossless periodic dielectric multilayers, having a basic period of two layers with equal effective optical thicknesses and different refractive indices, are treated theoretically. The results of computer calculations are presented in graphs which simplify the design of nonpolarizing beam splitters and two detailed examples consisting of layers of ZnS and MgF₂ are given.     

Bilayer Coatings for Light Refraction Without Change of Polarization

Abstract

Wave refraction without change of polarization at a dielectric—dielectric interface is achieved with a bilayer coating of two transparent thin films. For given refractive indices of all media, the thicknesses of the two films are determined as functions of the angle of incidence. The polarization-independent reflectance and the differential reflection phase shift of the coated substrate are also calculated. Examples are presented of MgF₂—ZnS and Ge—MgF₂ bilayer coatings on a Ge substrate that refract infrared radiation without change of polarization. Such coatings are useful in the construction of polarization-preserving beam deflectors and beam splitters.     

4.2 Monitoring of optical thin films using a quartz crystal monitor

Quartz crystal monitoring in the production of dielectric multilayer stacks is compared to optical monitoring. The stacks are calculated with the aid of an optimizing program. This yields optical thicknesses of the layers differing from multiples of a quarter of the wavelength. Optical monitoring is complicated in this case. Using quartz crystal monitoring, planning and execution of the process is earsier and yields stacks with satisfactory reflectance characteristics faster than with optical monitoring.The reproducibility of the optical thickness of MgF₂ layers is investigated. In general, both methods turn out to be equivalent in performance.     

Nonpolarizing and polarizing filter design

We describe a nonpolarizing filter design at oblique incidence and a polarizing filter design at normal incidence that use a uniaxially anisotropic layer. The phase thicknesses and the optical admittances of the layers are compensated for by the birefringent properties of a thin film at oblique incidence. This concept can be applied to the design of nonpolarizing bandpass and edge filters at oblique incidence and of polarizing beam splitters at normal incidence. Besides, the dependence of narrow-bandpass filters on normal incidence is discussed.     

Investigation of the interfacial structure of ultra-thin platinum film deposited by cathodic–arc

Ultra-thin films are of interest in the production of X-ray mirrors that use a multilayer structure. The most commonly used deposition techniques are dc magnetron sputtering and electron beam evaporation; this paper presents results of cathodic–arc deposition. Ultra thin films of platinum with nominal thicknesses in the range 15–65 Å were deposited on silicon substrates and the film structure investigated using X-ray reflectivity and X-ray photoelectron spectroscopy. It has been found that the structure of the deposited films consists of three layers—the platinum film, a silicon oxide layer and a platinum silicide layer. In contrast to dc magnetron and electron beam deposited films, the silicide layer of cathodic–arc deposited films have a higher density and greater thickness, which is attributed to the higher energy process of this deposition technique. These attributes of the cathodic–arc deposited films suggest that the deposition technique is not suitable for production of mirrors of materials that react with each other, but for materials that do not the deposition technique is potentially more favourable than that of e-beam and magnetron sputtering.     

Design and manufacture of metal/dielectric long-wavelength cutoff filters

Thin films of high reflecting metal, such as Ag, have a high reflectance in the long-wavelength region. When they are combined with dielectric layers, it is possible, through thin film interference effects, to induce transmission in certain shorter wavelength regions. Thus, they are useful components for the design of long-wavelength cutoff filters with a broad rejection region. In this paper, metal/dielectric multilayer designs based on this principle are numerically investigated. Three designs with different cutoff wavelengths and with very broad transmission regions in the visible or near-IR spectral ranges are presented. An excellent rejection on the long-wavelength side extends beyond 20 μm. Experimental results for one of the designs produced in our magnetron sputtering system are given.     

Calculation of electric field and absorption distributions in thin film structures

It will be shown how, by s straightforward extension of the usual matrix formalism for the calculation of transmittance and reflectance of thin film optical structures, the internal electric field distribution can be calculated. Consideration of the energy flux then allows one to calculate the distribution of absorption in the structure. The effects of absorption are included without approximation so that there is no restriction on the nature of the substrate or of any of the thin film media. Absorbing dielectrics, semiconductors or metal layers are allowed. Examples will be given of the application of the theory to antireflection coatings, high reflectance mirrors and interference filters.     

Multilayer Systems: Antireflecting Systems,High-Reflecting Stacks and Interference Filters

The properties of three multilayer systems which are of potential importance in scientific photography are examined. Antireflecting systems of one and two layers are considered and the conditions under which single layer blooming is likely to be inadequate are mentioned. The use of multilayer stacks of quarter-wave layers as an alternative to the semi-transparent metal filmis discussed. Finally the properties of interference filters are compared with those of dye filters. Both silver + dielectric and all-dielectric interference filters are considered.     

Layer-by-layer design method for multilayers with barrier layers: application to Si/Mo multilayers for extreme-ultraviolet lithography

A previous layer-by-layer multilayer design method [J. Opt. Soc. Am. A 19, 385 (2002)] is completed by adding the possibility of alternating layers with fixed thicknesses along with layers whose thicknesses are optimized for the largest possible reflectance at a desired wavelength. The previous algorithm did not allow for layers with fixed thicknesses. The current formalism is particularly suited for a multilayer design in which barrier layers of given thicknesses are used to prevent diffusion and/or reaction between the multilayer constituents. The design method is also useful both when intermixing zones develop at multilayer interfaces and when capping layers are used. The algorithm allows the design of multilayers with complex barrier layers with any number of layers of any optical constants. The optimization can be performed either for normal incidence or for nonnormal incidence with either s- or p-polarized radiation. The completed method provides a fast and accurate procedure for multilayer optimization regardless of the number of different materials used in the multilayer. The optimum layer thickness is determined by means of functions suitable for implementation in a computer code. The performance of the current algorithm is exemplified through the design of Si/Mo multilayers with intermixing layers or with barrier layers that are optimized for the largest reflectance at 13.4 nm. The use of specific barrier layers on each multilayer interface is also discussed.     

R.F. sputtering system for the preparation of multilayer optical filters

Thin film multilayer optical filters are usually prepared by vacuum evaporation of successive layers. The deposition of thin films by sputtering has many advantages over the vacuum evaporation technique and hence it is employed for the fabrication of better quality optical filters. However, the filters may be more time consuming to prepare if a single-target sputtering system is used because two different materials are required for alternate layers. For the preparation of multilayer optical filters, a special r.f. sputtering jig arrangement with two target holders is fabricated. Using this the successive layers can be deposited in one pumpdown. A simple coupling arrangement used to match the r.f. generator output impedance to the load is explained. With all the sputtering parameters such as the pressure, the temperature and the power maintained constant except the time, control of the thickness of the multilayers is achieved. A calibration chart of sputtering time versus thickness of the materials to be deposited is prepared for TiO₂ and SiO₂ for the above purpose. Using this calibration chart, the deposition time of different layers of any optical filters based on these dielectric materials can be fixed to obtain optical filters of acceptable quality and reproducibility.     

On the Limiting Bandwidth of Interference Filters : Influence of Temperature during Production

Computer simulation of thin-film multilayer production has shown that the effects of errors in the layers on the performance of complete coatings depends strongly on the particular monitoring process used. Deposition of dielectric quarter-wave multilayers is usually controlled by a method which involves the detection of the maxima and minima of transmission for the centre wavelength of the filter, the turning value method, and we know that this technique profits from an exceptionally efficient error compensation. The true tolerances in stack production are much larger than we would calculate neglecting this compensation. However, the analysis of experimental results shows that we must consider other effects which have so far been neglected in the computer simulation and which affect the monitoring process enough to prevent the fabrication of interference filters with very narrow transmission bands. Here we describe how the computer simulation is modified to take account of the influence of temperature changes during filter manufacture. First, it is necessary, for each material used, to determine the dilatation coefficients of both refractive index and thickness; they may be deduced from measurements of shifts with temperature of the centre wavelength of narrow-band filters of two different designs. Then, as a first approximation, we assume in the simulation a gradual temperature change which is always proportional to the deposited thickness and which reaches a total of 60°C for the complete filter. The calculations show that the effects of such a temperature change cannot be neglected even if the actual monitoring is perfect, that is if the deposition is always terminated exactly at a turning value of transmittance. The optical characteristics of very narrow-band filters, and especially of double half-wave filters, are seriously degraded. If, in addition, errors in determination of the turning values are included, then the effects are considerably worse. This can explain why it is so difficult to make filters with passband width less than 8 Å. The results of this study can be used to choose optimal conditions for the production of narrow-band filters.     

Direct optical monitoring on the rotating substrate holder

Single wavelength optical monitoring is frequently applied in large box coaters. In state of the art optical coating systems a testglass changer with stationary test glasses is used for thickness monitoring while the substrates are located on a rotating substrate holder. The accuracy of this so called indirect monitoring technique is mainly limited by variations of the tooling factor. Direct monitoring on a substrate which is located on the rotating substrate holder avoids these errors and takes advantage of automatic thickness error compensation effects. The paper reports substantial progress which has been achieved for coating systems with large area substrate holders (up to Ø 1500 mm). Intermittent monitoring on a substrate or a witness was applied. This technique enables rapid prototyping with tight specifications and high yields in large area batch coaters. Application results of challenging optical multilayer systems are demonstrating clearly the potential of this powerful monitoring technique. The monitoring capability was investigated for a lot of different layer systems such as dielectric mirrors, anti‐reflection coatings, sophisticated edge filters, polarizer coatings, beam splitters multiple cavity band‐pass filters and notch filter coatings. Strong coincidence of theory with experiment was achieved with plasma ion assisted deposition (PIAD) and magnetron sputtering. Reproducibility experiments have clearly shown the benefits of this monitoring technique.     

Theoretical analysis of two nonpolarizing beam splitters in asymmetrical glass cubes

The design principle for a nonpolarizing beam splitter based on the Brewster condition in a cube is introduced. Nonpolarizing beam splitters in an asymmetrical glass cube are proposed and theoretically investigated, and applied examples are given. To realize 50% reflectance and 50% transmittance at specified wavelengths for both polarization components with an error of less than 2%, two measurements are taken by adjusting the refractive index of the substrate material and optimizing the thicknesses of each film in the design procedures. The simulated results show that the targets are achieved using the method reported here.     

Ellipsometric study of metal-organic chemically vapor deposited III–V semiconductor structures

Metal-organic chemical vapor deposition was used to grow epitaxial layers of AlGaAs, GaAs and InGaAs on semi-insulating GaAs substrates. The ternary composition of the thick layers was determined by double-crystal X-ray diffraction (DCXRD). Variable angle spectroscopic ellipsometry was used to characterize several types of structures including relaxed single-component thick films and strained lattice multilayer structures. The thick film characterization included ternary alloy composition as determined by a numerical algorithm and interface quality. The results for the alloy composition were equal to the DCXRD results, to within the experimental errors except for the top layer of a thick AlGaAs film. The strained layer multistructures were analyzed for all layer thicknesses and alloy compositions. For most layers, the thickness was equal to the nominal values, to within the experimental errors. However, in all three In_0.3Ga_0.7As samples, the indium concentration estimated from the relaxed layer's InGaAs algorithm was around 21%, i.e. much lower than the nominal value. This result indicates a shift in the critical points of the dielectric function, owing to strain effects.     

Narrow-band interference filters with unconventional spacer layers

Classical narrow-band interference dielectric filters with all-dielectric reflectors have quarter-wave stacks separated by a half-wave thickness (or a multiple-) spacer layer. These filters are essentially Fabry-Perot filters; hence the theory developed for those filters applies in full. The theory of narrow-band interference dielectric filters with unconventional spacer layers is presented. This spacer layer consists of two different materials. The optical features of these filters are compared with the features of Fabry-Perot filters. The influence of the errors of the layers on spectral characteristics is analyzed. The theory presented can be applied to any spectral range as well as to any thin-film material, including absorbing and nonlinear materials.     

Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors

Thin-film interference filters, suitable for use on GaAs- and InP-based lasers, have been fabricated by use of the electron-cyclotron resonance plasma-enhanced chemical vapor deposition technique. Multilayer film structures composed of silicon oxynitride material have been deposited at low temperatures with an in situ rotating compensator ellipsometer for monitoring the index of refraction and thickness of the deposited layers. Individual layers with an index of refraction from 3.3 to 1.46 at 633 nm have been produced with a run-to-run reproducibility of 0.005 and a thickness control of 10 A. Several filter designs have been implemented, including high-reflection filters, one- and two-layer anitreflection filters, and narrow-band high-reflection filters. It is shown that an accurate measurement of the filter optical properties during deposition is possible and that controlled reflectance spectra can be obtained.     

Narrow-bandpass filters with broad rejection band for single-mode waveguides

Fabry-Perot bandpass filters made of mirrors with both high- and low-Dn (refractive-index modulation) have simultaneously a broad rejection band and a narrow passband. The higher Dn's are obtained with multilayer mirrors and the lower with Bragg gratings (BG's). Implementation of a sampling calculation technique based on the characteristic matrix formalism used for interference coatings allows for simulation of hybrid filters constructed from multilayer mirrors and BG's. The possible defects of hybrid filters are extensively analyzed. Bandpass filters made purely of both high- and low-Dn BG's are also simulated. All these filters are useful for wavelength division multiplexing applications.     

Polarization-dependent angular-optical reflectance in solar-selective SnOx:F/Al2O3/Al reflector surfaces

Polarization-dependent angular-optical properties of spectrally selective reflector surfaces of fluorine-doped tin oxide (SnOx:F) deposited pyrolytically on anodized aluminum are reported. The angular-reflectance measurements, for which both s- and p-polarized light are used in the solar wavelength range 0.3-2.5 microm, reveal strong spectral selectivity, and the angular behavior is highly dependent on the polarizing component of the incident beam, the total film thickness, and the individual thickness of the Al2O3 and the SnO2:F layers. The anodic A12O3 layers were produced electrochemically and varied between 100 and 205 nm in thickness. The SnOx:F films were grown pyrolytically at a temperature of 400 degrees C with film thicknesses varying in the range 180-320 nm. The reflectors were aimed at silicon solar cells, and good spectrally selective reflector characteristics were achieved with these thinly preanodized, SnOx:F/Al samples; that is, high cell reflectance was obtained for wavelengths below 1.1 microm and low thermal reflectance for wavelengths above 1.1 microm, with the best samples having values of 0.80 and 0.42, respectively, at near-normal angles of incidence. This corresponds to an anodic layer thickness of 155 nm. Both the angular calculations and the experimental measurements show that the cell reflectance is relatively insensitive to the incidence angle, and a low thermal reflectance is maintained up to an angle of approximately 60 degrees.