量子点在生命科学中的应用及其进展

量子点因其独特的光学和电子学性质而具有很高的实用价值。本文概述了量子点的特性和制备方法,着重阐述了其在生命科学,尤其是免疫生物学和临床检验学中的应用进展,并对其发展进行了展望。     

量子点-聚合物纳米复合材料的光电器件研究进展

量子点因具有优异的光电特性,近年来备受关注。但量子点的规模化应用因受到其加工工艺及稳定性等因素限制而尚待开发。量子点-聚合物纳米复合材料的出现有效弥补了这一问题,将量子点分散到有机聚合物中形成纳米复合材料,集合量子点与聚合物的各自优势于一体,是解决量子点当前应用问题的一种有效方法,具有显著的发展潜力。文中介绍了量子点的主要制备技术,并在此基础上对量子点-聚合物复合材料的制备方法及其在激光器、发光二极管、光电探测器、量子点电视等光电子器件中的应用进展进行了概述,最后对其在光电器件领域的应用进行了展望。     

量子点液晶显示技术发展趋势与展望

量子点技术已经在液晶显示产业中开发应用了10年，其应用形式经过了数次变迁。近几年，量子点扩散板、QDOLED、钙钛矿量子点等技术的应用，丰富了量子点技术应用的多样性，使量子点技术的进步成为推动显示产业进步的重要驱动力。除了常规的利用量子点技术提升色域覆盖率外，人们发现在护眼、节能等方面量子点技术对于液晶显示技术也有重大的意义。本文总结了目前量子点技术应用的进展，对未来量子点技术的发展趋势及在液晶显示的发展方向进行了预测，对未来量子点技术的发展方向具有一定参考意义。     

靶向量子点的合成及其在活体成像研究中的应用

利用水相法制备CdTe量子点,在不同细胞培养基及不同pH值环境中对其进行了稳定性表征,研究了量子点对HeLa细胞增殖抑制率的影响,而后利用耦联转铁蛋白的量子点对HeLa细胞进行了靶向性标记,最后将量子点与葡聚糖耦联,通过透明背脊皮翼视窗观察其在血管内的动态过程。结果表明:合成的量子点发射谱峰值为660nm,在DMEM和M1640细胞培养基中具有良好稳定性,当缓冲液pH值由5升高到13时,量子点荧光强度先升高后下降;量子点浓度为13μg/mL时,HeLa细胞存活率高于80%;耦联转铁蛋白的量子点对HeLa细胞靶向作用明显;可观察到耦联葡聚糖的量子点在小鼠血管中的动态运动。该研究表明合成的量子点可成功用于活体成像。     

半导体量子点量子光源研究进展

半导体量子点被认为是制备量子光源的最佳方案。量子点量子光源的可控性、纯度、亮度、全同性和相干性都有了很大的提高,已接近于应用水平。归纳了基于半导体量子点的量子光源研究进展中的关键问题,指出了半导体量子点量子光源在3个方面的主要进展,并讨论了关键制备技术,即半导体量子点作为单光子光源,实现了高全同性、高纯度、高收集效率等特性; 通过降低精细结构分裂效应等措施,量子点量子光源实现了具有高比特率、高保真度特性的光子纠缠; 量子点量子光源与平面电子线路和纳米光子系统的芯片集成取得了显著成效。在此基础上,对半导体量子点量子光源在量子信息领域的研究前景进行了展望。     

胶体量子点激光器研究现状和展望（特邀）

2023年诺贝尔化学奖颁发给了Moungi G. Bawendi、Louis E. Brus和Alexei I. Ekimov,以表彰其在量子点领域的开创性研究工作。虽然量子点为基础物理研究提供了理想的平台,但在应用方面还远未展现其天赋。其中,量子点独特的电子结构和可溶液加工特性,使其在低成本、高性能激光领域具有广阔的前景。经过20余年的研究,胶体量子点激光器取得了令人瞩目的进展,然而,目前的胶体量子点激光器仍未实现商业化,这说明人们对胶体量子点激光器基础物理的理解以及对关键制备技术的掌握仍有欠缺。基于此,笔者对胶体量子点激光器在近年来的工作进展进行了梳理,并提出了胶体量子点激光领域所面临的挑战,以及克服这些挑战的研究思路。最后,对胶体量子点激光器的未来前景和潜在应用进行了展望。     

区块链在量子通信中的应用探讨

首先总结了主流量子通信网络组成部分、所用技术及现有标准进展情况,同时分析了其在实际落地应用中的痛点与难点,对相应问题进行深入分析。引入区块链技术,分析分布式账本技术应用在量子通信中的契合点与优势,并对基于区块链系统的量子通信应用安全性提升方案进行了总结。最后给出了基于区块链的量子通信组网安全性提升方案。     

荧光碳量子点在生物医学领域的应用

碳量子点作为一种新型碳纳米材料,具有与传统金属量子点相类似的荧光性能,且生物相容性好、毒性低,是一种进行生物标记和细胞成像等应用的理想荧光材料。本文对碳量子点的性质及在生物医学领域的应用进行了研究和分析,分析讨论了荧光碳点在未来发展中需要解决的主要问题和研究方向。     

Ge/Si量子点的生长研究进展

要有效应用SK模式生长的Ge量子点,必须实现Ge量子点的位置可控并且进一步缩小Ge量子点的尺寸.阐释了这方面的研究进展,特别对图形衬底生长Ge量子点,利用Si表面的自组织性在错切割的邻晶面衬底上生长有序Ge岛,表面杂质诱导成岛这三个方面的进展加以介绍分析.     

InP基应变自组装纳米材料及其光电子器件研究进展

半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。     

Bright and Photostable Organic Fluorescent Dots with Aggregation‐Induced Emission Characteristics for Noninvasive Long‐Term Cell Imaging

Efficient long‐term cell tracing in a noninvasive and real‐time manner is of great importance to understand genesis, development, invasion, and metastasis of cancerous cells. Cell penetrating organic dots with aggregation‐ induced emission (AIE) characteristics are successfully developed as long‐term cell trackers. The AIE dots enjoy the advantages of high emission efficiency, large Stokes shift, good biocompatibility, and high photostability, which ensure their good performance in long‐term non‐invasive in vitro cell tracing. Moreover, it is the first report that AIE dots exhibit certain permeability to cellular nucleus, making them attractive potential candidates for nucleus imaging. The AIE dots display superior performance compared to their counterparts of inorganic quantum dots, opening a new avenue in the development of fluorescent probes for monitoring biological processes.     

Realization of a GaAs/AlGaAs-based quantum cellular automata cell

We report on the experimental demonstration of a four-dot cell on a GaAs/AlGaAs substrate fabricated using electron beam lithographically defined gates. These surface metallic gates form a pair of double quantum dots, as well as a pair of quantum point contacts that act as non-invasive voltage probes. This device is used to realize a quantum cellular automata cell and, in further experiments, we employ it to investigate photon assisted tunneling. These results prove that the four-dot cell is a good building block candidate toward fulfilling the scalability DiVincezo criteria.     

纳米量子点结构的自组织生长

所谓自组织生长纳米量子点 ,是具有较大晶格失配度的两种材料 ,依靠自身的应变能量 ,并以 Stranki- Krastanov(S- K)生长模式 ,在衬底表面上形成的具有一定形状、尺寸和密度的自然量子点结构。文中主要介绍了量子点自组织生长的基本原理、几种不同类型量子点的自组织生长及其光致发光特性。     

半导体量子点最低导带态的量子限制效应

采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。     

Modeling improvement of spectral response of solar cells by deployment of spectral converters containing semiconductor nanocrystals

A planar converter containing quantum dots as wavelength-shifting moieties on top of a solar cell was studied. The highly efficient quantum dots are to shift the wavelengths where the spectral response of the solar cell is low to wavelengths where the spectral response is high in order to improve the conversion efficiency of the solar cell. It was calculated that quantum dots with an emission at 603 nm increase the multicrystalline solar cell short-circuit current by nearly 10%. Simulation results for planar converters on hydrogenated amorphous silicon solar cells show no beneficial effects, due to the high spectral response at low wavelength.     

Clocked molecular quantum-dot cellular automata

Quantum-dot cellular automata (QCA) is an approach to computing that eliminates the need for current switches by representing binary information as the configuration of charge among quantum dots. For molecular QCA, redox sites of molecules serve as the quantum dots. The Coulomb interaction between neighboring molecules provides device-device coupling. By introducing clocked control of the QCA cell, power gain, reduced power dissipation, and computational pipelining can be achieved. We present an ab initio analysis of a simple molecular system, which acts as a clocked molecular QCA cell. The intrinsic bistability of the molecular charge configuration results in dipole or quadrupole fields that couple strongly to the state of neighboring molecules. We show how clocked control of the molecular QCA can be accomplished with a local electric field.     

Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns

In this article, recent investigations of vertically aligned quantum dot columns conducted at Stanford University are reviewed. The quantum dots are InAs in a matrix of GaAs. Both the quantum dots and quantum dot columns are formed through strain-induced islanding, without lithography. Two aspects of these columns are discussed. First, the electronic coupling of quantum dots within columns of up to ten quantum dots is demonstrated. The coupling is adjusted and improvements to a simple light-emitting diode are shown. Second, increased uniformity of a surface quantum dot layer is shown when a subsurface layer of these columns are used. The most impressive results occur when the columns contain a large number of islands. Reduced variations in average ensemble height and diameter, called size uniformity, and average nearest neighbor distances, called structural uniformity, are shown. A surface unit cell of islands is demonstrated and the lack of a surface lattice is discussed.     

Self-assembled semiconductor structures: electronic andoptoelectronic properties

Strained epitaxy has been shown to produce pyramidal-shaped semiconductor dot structures by single-step epitaxy. The very high density of these dots (approaching per wafer) and their ever improving uniformity suggest that these features could have important applications in future microelectronics. Understanding the structural and electronic properties of these quantum dots is therefore of great importance. In this paper, we examine some of the physics controlling the performance of devices that could be made from such structures. The self-assembled quantum dots are highly strained and we will examine the strain tensor in these quantum dots using a valence force-field model. In this paper we will address the following issues: (1) What is the general nature of the strain tensor in self assembled quantum dots? (2) What are the electron and hole spectra for InAs-GaAs quantum dots? (a) What are the important intersubband radiative and nonradiative scattering processes in the self assembled quantum dots? In particular, we will discuss how the electron-phonon interactions are modified in the quantum dot structures. Consequences for uncooled intersubband devices such as lasers, detectors, and quantum transistors will be briefly discussed     

CdTe/CdS、CdTe/ZnS核壳结构半导体量子点制备及荧光特性

核壳半导体量子点材料因其在修复单量子点表面缺陷方面的特殊性能,极大地提高了量子点的光学性能而受到人们的研究。改进了CdTe核心的制作方法,使用小型三口瓶替代传统的小烧瓶作为反应容器,制备碲氢化钠,合成了不同核心尺寸、不同壳层厚度与不同壳层材料的10种CdTe/CdS、CdTe/ZnS核壳结构半导体量子点。对10种核壳结构半导体量子点材料进行紫外可见吸收光谱及荧光光谱测试,并分析其荧光特性。量子点在紫外可见波段的吸收光谱表明随着量子点尺寸的增大,吸收峰发生红移。通过实验结果与分析可推断出CdTe/CdS量子点荧光寿命和强度的不同是由于核心和壳层尺寸的不同量子点在I型和II型中相互转换;CdTe/ZnS的壳层厚度增加时,由于ZnS的壳层降低了核心外表的悬空键和表面缺陷态的数量,使电子空穴对复合机率加大,使得荧光峰位产生了红移。     

Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots

From studies of two-phase systems (borosilicate matrices containing ZnSe or CdS quantum dots), it was found that the systems exhibit a specific feature associated with the percolation phase transition of charge carriers (excitons). The transition manifests itself as radical changes in the optical spectra of both ZnSe and CdS quantum dot systems and by fluctuations of the emission band intensities near the percolation threshold. These effects are due to microscopic fluctuations of the density of quantum dots. The average spacing between quantum dots is calculated taking into account their finite dimensions and the volume fraction occupied by the quantum dots at the percolation threshold. It is shown that clustering of quantum dots occurs via tunneling of charge carriers between the dots. A physical mechanism responsible for the percolation threshold for charge carriers is suggested. In the mechanism, the permittivity mismatch of the materials of the matrix and quantum dots plays an important role in delocalization of charge carriers (excitons): due to the mismatch, “a dielectric trap” is formed at the external surface of the interface between the matrix and a quantum dot and, thus, surface exciton states are formed there. The critical concentrations of quantum dots are determined, such that the spatial overlapping of such surface states provides the percolation transition in both systems.