Dynamic response of target electrons upon low and medium energy ion impact

We found that differential scattering cross sections for medium and low energy He⁺ and Ne⁺ impact on high Z-atoms were significantly enhanced compared with those calculated from the inter-atomic potential based on the Hartree–Fock–Slater atomic model coupled with the bare nuclear charge of a projectile. The enhanced scattering cross sections determined experimentally are reproduced well by a simple model that the center of gravity of target electrons is shifted toward the projectile during a large-angle collision. The shift from the target nucleus is expressed as a function of inter-nuclear distance in terms of a dipole moment (Z₁ and Z₂: atomic numbers of projectile and target, : polarizability, e: electron charge). The effective polarizability β (≡Z₁/Z₂) is expressed as a function of ion velocity v [10⁷ cm/s], in the form β = 0.079 exp[−0.46v].     

Charge state dependence of L-shell X-ray production cross sections of 28Ni, 29Cu, 30Zn, 31Ga and 32Ge by 12 MeV O ions

L-shell X-ray production cross sections of elements from Z₂=28 to 32 were measured. A 12 MeV incident oxygen beam, with and without K-shell vacancies, was used to make a charge state dependence analysis. Simultaneous measurements were made of both scattered particles and X-rays from the ultra-clean foils that had been made sufficiently thin to reach the single-collision regime. Target L-shell to projectile K-shell electron capture for hydrogen-like (q=Z₁ − 1) and fully stripped (q=Z₁) oxygen ions were then extracted. The measurements are compared with the predictions of the ECPSSR theory using a single-hole fluorescence yield. In general and contrast to the first Born calculations, this theory gives reasonable agreement with the data for oxygen ions without K vacancies. However, the ECPSSR still significantly overpredicts the data for oxygen ions with K vacancies.     

Effect of forming gas anneals on the photoluminescence from nanocrystalline silicon formed by Si implantation into SiO2 matrix

The blue region of the room temperature photoluminescence spectrum from Si nanocrystallites formed in SiO₂ by Si⁺ ion implantation has been observed for the first time after annealing in a forming gas (10% H₂ + 90% N₂) ambient. Thermally grown SiO₂ on Si substrates were implanted with a dose of 2 × 10¹⁷ Si⁺ cm⁻² at energies of 200 keV and 400 keV. For reference purposes, quartz silica was implanted also with the same dose of 200 keV Si⁺ ions. The implanted samples were annealed in nitrogen and forming gas at 900°C for 3 to 180 min. Both the SiO₂ and quartz samples exhibited luminescence at about 380 nm which was weak, but detectable, before annealing. During extended anneals in forming gas, the intensity increased by a factor of about 2 above that recorded after a nitrogen anneal but the peak position was unchanged. The intensity was greater in samples annealed in forming gas which is due to the additional hydrogen. It would seem that this blue luminescence originates from new luminescent centres in the matrix caused by the Si⁺ ion implantation.     

Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Low energy nitrogen (N) ions were irradiated during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method as a function of N⁺ ion acceleration energy (E_a) and N⁺ ion beam current density (I_N). E_a was varied from 70 to 170 eV I_N from 900 pA/cm² to 75 nA/cm². GaAs growth rate was fixed to 1 μm/h. In 2 K photoluminescence (PL) spectra of the samples with I_N = 3 nA/cm² and E_a = 70–100 eV, two sharp emissions at 1.508 eV (X₁) and 1.495 eV (X₂), which have been attributed to the emissions of excitons bound to isolated N atoms, and another one at 1.443 eV (X₅) were observed. These results show that nitrogen (N) atom in GaAs becomes optically active as an isoelectronic impurity at least in as-grown condition. For N⁺ ion-irradiated samples with rather high I_N, e.g., with I_N = 75 nA/cm² and E_a = 100 eV, a broad emission together with multiple sharp ones were observed after furnace annealing at 750°C which were ascribed to emissions of excitons bound to nitrogen-nitrogen (N---N) pairs.     

Path dependence of the charge state distributions of low-energy F ions backscattered from RbI(1 0 0)

Projectile neutralization during backscattering from RbI(1 0 0) of F multicharged ions in the keV energy range was investigated utilizing a time-of-flight technique. The energy and charge state distributions of the scattered ions were measured as a function of the polar incidence angle and the target azimuthal orientation. We found significant variations in the neutralization degree for incident projectiles of different charge states. The charge state distribution of scattered ions, including negative charge states, was found to depend on both the polar incidence and azimuthal orientation angles. These variations are attributed to the particular hard and soft encounters with neighboring lattice sites at the target surface along the path of the ion. Sample data for few-keV F²⁺ and F⁷⁺ incident projectiles are presented to illustrate the underlying concepts.     

Density measurement of amorphous SixGe1 − x alloys

The atomic density of amorphous Si_xGe_{1 − x} alloys (x = 1, 0.85, 0.67, 0.50, 0.20 and 0) has been measured. Mono-crystalline Si_xGe_1−x layers Were implanted with 1.50–2.75 MeV Si²⁺ and Ge²⁺ ions to produce the amorphous material. Using surface profilometry and RBS/channeling, it was found that amorphous alloys are less dense than the crystalline alloys, and that Vegard's law underestimates the a-Si_xGe_1−x density.     

Fundamental effects and non-linear Si detector response

Non-linearity in the energy response of a Si p-i-n charged particle detector has been studied for incident particles with Z₁ between 3 and 26, and energies between 0.1 and 0.7 MeV per nucleon. Although the data closely followed a straight line relations, fitting of the data to a third order polynomial revealed that the response exhibited a persistent curvature that acted to reduce the energy interval spanned by a channel as the energy increased. The curvature increased as Z₁ increased from 4 to 8 and then systematically decreased. The curvature is larger and has the opposite energy dependence to the stopping in a dead entrance window and the energy deposited in non-ionising processes within the active layer. The plasma recombination dependence on the average stopping along the plasma column may account for the reduction in curvature as Z₁ increases from 9 to 25 but cannot explain the net effect. The low-energy increase in energy channel span, which has also been reported by others, might be associated with electron excitation in resonant and direct classical quasi-elastic collisions for low-energy ions, or less likely, electronic non-linearity's associated with Z₁ and energy dependent time structure in the current pulse from the detector. Simple interpolation of the window-loss corrected polynomial coefficients is the best approach if the calibration for Z₁ cannot be established directly.     

Characterization of extended defects in SiGe alloys formed by high dose Ge implantation into Si

The synthesis of SiGe/Si heterostructures by Ge⁺ ion implantation is reported. 400 keV Ge⁺ ions were implanted at doses ranging from 3 × 10¹⁶ to 10 × 10¹⁶ ions/cm² into (001) Si wafers, followed by Si⁺ amorphisation and low temperature Solid Phase Epitaxial Regrowth (SPER). TEM investigations show that strained alloys can be fabricated if the elastic strain energy (E_el) of the SiGe layer does not exceed a critical value (E′_el) of about 300 mJ/m², which is independent of the implantation energy. Our analysis also suggests that “hairpin” dislocations are formed as strain relieving defects in relaxed structures. A “strain relaxation” model is proposed to explain their formation.     

PIXE measurements of Kr-sputtered TiN coatings

Titanium nitride films of 30–300 nm thickness deposited via dc magnetron sputtering were irradiated with 150–700 keV Kr ions at fluences up to 2.1 × 10¹⁷ cm⁻². These films were then scanned with a well-collimated 400 keV proton beam and the X-ray yield of Ti was measured both in and outside the Kr beam spot. This procedure results in a precision determination of the average film thickness (± 1% in the case of tens of nm films). The PIXE results are found to be consistent with RBS data of the same specimens. Sputtering yields were determined from the variation of X-ray yields assuming unchanged Ti/N stoichiometry in the implanted area. For thick TiN films (d₀ > 100 nm) the sputtering yields are in good agreement with predictions of the collisional cascade model by Sigmund. In contrast, sputtering of thin layers (d₀ = 30 nm) depended sensitively on the ion energy, being a factor of 2 higher at 150 keV than at 500 keV.     

Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.     

2 MeV Si ion implantation damage in relaxed Si1−xGex

The damage produced by implanting, at room temperature, 3 μm thick relaxed Si_1−xGe_x layers with 2 MeV Si⁺ ions has been measured as a function of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 10¹⁰–10¹⁵ cm⁻². The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si_1−xGe_x with increasing x is observed. The characteristics of implantation-induced defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe.     

Investigation of in-reactor creep and irradiation growth of zirconium-2.5 wt% niobium channel tubes

We summarize the diametral creep results obtained in the MR reactor of the Kurchatov Institute of Atomic Energy on zirconium-2.5 wt% niobium pressure tubes of the type used in RBMK-1000 power reactors. The experiments that lasted up to 30 000 h cover a temperature range of 270 to 350°C, neutron fluxes between 0.6 and 4.0 ×10¹³ n/cm² · s (E > 1 MeV) and stresses of up to 16 kgf/mm². Diametral strains of up to 4.8% have been measured. In-reactor creep results have been analyzed in terms of thermal and irradiation creep components assuming them to be additive. The thermal creep rate is given by a relationship of the type ε_th = A₁ exp [(A₂ + A _3σt) T] and the irradiation component by ε_rad = A_4σtø(T − A₅), where T = temperature, σ_t = hoop stress, ø = neutron flux and a₁ to A₅ are constants. Irradiation growth experiments carried out at 280° C on specimens machined from pressure tubes showed a non-linear dependence of growth strain on neutron fluence up to neutron fluences of 5 × 10²⁰ n/cm². The significance of these results to the elongation of RBMK reactor pressure tubes is discussed.     

MeV离子轰击碳样品引起的碳氢团簇产额

利用北京大学2×1.7MV静电串列加速器产生的1.5MeV Au2+和Si+束流轰击碳纳米管样品,用二次离子飞行时间质谱方法分析了二次离子成分,通过质量已知的样品的定标,确认了轰击产生的二次离子质量。分析束流轰击后的二次离子产额,发现在此能量下二次离子产额与离子在物质中射程的横向歧离表现出正相关。     

A study of the blue photoluminescence emission from thermally-grown, Si-implanted SiO2 films after short-time annealing

Thermal SiO₂ films have been implanted with Si⁺ ions using double-energy implants (200 + 100 keV) at a substrate temperature of about −20°C to total doses in the range 1.6 × 10¹⁶−1.6 × 10¹⁷ cm⁻² followed by short-time thermal processing, in order to form a Si nanostructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a function of ion dose, manner of heat treatment, anneal time and anneal temperature. For the formation of blue PL emitting centres, optimum processing conditions in terms of excess Si concentration and overall thermal budget are mandatory. The nature of the observed blue emission is discussed.     

M-shell X-ray production cross sections for PIXE applications

M-shell X-ray production cross sections by protons of energies 0.1–4.0 MeV are reported for the most intense M_β(M_4,5N_6,7), M_γ(M₃N_4,5) and M₃O_4,5 M-X ray transitions appearing in PIXE spectra. The cross sections have been measured systematically for selected heavy elements between Ta and Th (Z₂=73–90). Measured M-X-ray production cross sections were found to be universal with respect of M-shell scaled velocity ξ_M. The data are compared with available theoretical calculations of M-shell ionization by charged particles based on the plane-wave Born approximation (PWBA) and the semiclassical approximation (SCA), as well as the ECPSSR theory and relativistic RPWBA-BC which are going beyond the first order treatment. Simple parameterization of experimental proton induced M-X-ray cross sections is proposed for PIXE applications. This parameterization, being accurate within ±5%, can be used for precise determination of heavy metal concentrations by PIXE technique.     

Effect of dielectronic recombination on charge-state distribution in laser-produced plasma based on steady-state collisional-radiative models

Armed with four different steady-state collisional-radiative (CR) models, we investigated the effect of dielectronic recombination (DR) on the charge-state distribution in laser-produced silicon plasma. To assess this effect, we performed a series of temporally resolved spectra of highly charged Si ions in the extreme ultraviolet region. Ab initio calculations of the DR rate coefficients were done for Si⁶⁺–Si⁴⁺ ions. We also analyzed the evolution of the collisional ionization, radiative recombination, three-body recombination, photo-ionization, and DR rate coefficients as a function of electron temperature. The electron temperature and electron density for different delay times were obtained by comparing the normalized experimental and simulated spectra. The ion fraction and average charge state from the four different CR models were also obtained. The results indicate that the DR process has a greater influence in the stage of plasma evolution that cannot be neglected in plasma diagnoses.     

Neutralization of keV Ne and Ar ions during grazing scattering from an Al(1 1 1) surface

Charge fractions after scattering of Ne⁺ ions, Ne⁰ atoms and Ar⁺ ions with keV energies under a grazing angle of incidence from an atomically clean and flat Al(1 1 1) surface are studied. For incoming Ne⁺ ions we observe defined ion fractions in the scattered beams, whereas for incident Ne⁰ atoms ion fractions are more than one order of magnitude smaller. This experimental result provides clear evidence for a survival of Ne⁺ ions over the whole scattering event. From the dependence of ion fractions on the perpendicular energy component we derive neutralization rates as function of distance from the surface. These rates compare well with recent theoretical calculations for the system He⁺–Al(1 1 1). For incident Ar⁺ ions no survival of ions is found and upper limits for the survival probability and lower limits for the neutralization rate are determined.     

Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

Si nanocrystals (Si-nc) embedded in a SiO₂ layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess  8 × 10²¹ Si⁺/cm³, the size of the Si-nc was found to be 3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of 2.4 × 10²² Si⁺/cm³, the Si-nc diameter ranges from 2 to 12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first 25 nm in this sample (also visible on TEM image) and most of the SiO₂ bonds have been replaced by Si–O bonds. Experimental and simulation results suggest that a local Si concentration in excess of 3 × 10²¹ Si/cm³ is required for the production of Si-nc.     

On the effect of TiO2 additions on sintering of UO2

Small additions of TiO₂ are known to increase the density of sintered UO₂. It is shown that this effect coincides with an increase in the diffusion rate of the slower moving ion, the uranium ion. Quantitative metallography and measurement of the gas release following high-dose ion-bombardment show that small amounts of titanium are soluble in UO₂. Possible mechanisms by which TiO₂ affects the disorder of UO₂ are discussed. Reduction of TiO₂ and interstitial solution of the small titanium ions are favoured. Similar experiments are reported for ThO₂+TiO₂.     

Thermochemical study of vaporization of LiTiO by a mass spectrometric Knudsen effusion method

The vaporization of Li₄TiO₄ has been studied by a mass spectrometric Knudsen effusion method in the temperature range 1082–1582 K. Identified vapors are Li(g), LiO(g), Li₂O(g) and Li₃O(g). When the vaporization proceeds, the content of Li₂O in the Li₄TiO₄ sample decreases and the condensed phase of the sample changes to β-Li₄TiO₄ plus l-Li₂TiO₃ below 1323 K, to β-Li₄TiO₄ plus h-Li₂TiO₃ in the range 1323–1473 K and to h-Li₂TiO₃ plus liquid above 1473 K. On the basis of the partial pressure data, the enthalpies of formation for β-Li₄TiO₄ from elements and from constituent oxides have been determined to be ΔH_f,298^°(β-Li₄TiO₄,s) = −2247.8 ± 14.3 kJ mol⁻¹ and Δ_fox,298^°(β-Li₄TiO₄, s) = −107.3 ± 14.3 kJ mol⁻¹, respectively.