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1.
Sui Lin Shi Wei Pan Ming Hao Fang Zhen Yi Fang 《Journal of the American Ceramic Society》2006,89(2):743-745
Ti3 SiC2 /HAp composites with different Ti3 SiC2 volume fractions were fabricated by spark plasma sintering (SPS) at 1200°C. The effects of Ti3 SiC2 addition on the mechanical properties and microstructures of the composites were investigated. The bending strength and fracture toughness of the composites increased with increasing of Ti3 SiC2 content, whereas the Vickers hardness decreased. The bending strength and fracture toughness reached 252±10 MPa and 3.9±0.1 MPa·m1/2 , respectively, with the addition of 50 vol% Ti3 SiC2 . The increases in the mechanical properties were attributed to the matrix strengthening and interactions between cracks and the Ti3 SiC2 platelets. 相似文献
2.
Zhe-Feng Zhang Zheng Ming Sun Hitoshi Hashimoto Toshihiko Abe 《Journal of the American Ceramic Society》2003,86(3):431-436
Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3 SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3 SiC2 samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3 SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3 SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti3 SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique. 相似文献
3.
Da Chen Kiroshi Shirato Michel W. Barsoum Tamer El-Raghy Robert O. Ritchie 《Journal of the American Ceramic Society》2001,84(12):2914-2920
The cyclic fatigue and fracture toughness behavior of reactive hot-pressed Ti3 SiC2 ceramics was examined at temperatures from ambient to 1200°C with the objective of characterizing the high-temperature mechanisms controlling crack growth. Comparisons were made of two monolithic Ti3 SiC2 materials with fine- (3–10 μm) and coarse-grained (70–300 μm) microstructures. Results indicate that fracture toughness values, derived from rising resistance-curve behavior, were significantly higher in the coarser-grained microstructure at both low and high temperatures; comparative behavior was seen under cyclic fatigue loading. In each microstructure, Δ K th fatigue thresholds were found to be essentially unchanged between 25° and 1100°C; however, there was a sharp decrease in Δ K th at 1200°C (above the plastic-to-brittle transition temperature), where significant high-temperature deformation and damage are first apparent. The substantially higher cyclic-crack growth resistance of the coarse-grained Ti3 SiC2 microstructure was associated with extensive crack bridging behind the crack tip and a consequent tortuous crack path. The crack-tip shielding was found to result from both the bridging of entire grains and from deformation kinking and bridging of microlamellae within grains, the latter forming by delamination along the basal planes. 相似文献
4.
The effect of vacuum annealing on the thermal stability and phase transition of Ti3 SiC2 has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti3 SiC2 undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti5 Si3 C x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum-annealed Ti3 SiC2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti5 Si3 C x with depth. 相似文献
5.
Tamer El-Raghy Michel W. Barsoum Antonios Zavaliangos Surya R. Kalidindi 《Journal of the American Ceramic Society》1999,82(10):2855-2860
In this article, the second part of a two-part study, we report on the mechanical behavior of Ti3 SiC2 . In particular, we have evaluated the mechanical response of fine-grained (3–5 μm) Ti3 SiC2 in simple compression and flexure tests, and we have compared the results with those of coarse-grained (100–200 μm) Ti3 SiC2 . These tests have been conducted in the 25°–1300°C temperature range. At ambient temperature, the fine- and coarse-grained microstructures exhibit excellent damage-tolerant properties. In both cases, failure is brittle up to ∼1200°C. At 1300°C, both microstructures exhibit plastic deformation (>20%) in flexure and compression. The fine-grained material exhibits higher strength compared with the coarse-grained material at all temperatures. Although the coarse-grained material is not susceptible to thermal shock (up to 1400°C), the fine-grained material thermally shocks gradually between 750° and 1000°C. The results presented herein provide evidence for two important aspects of the mechanical behavior of Ti3 SiC2 : (i) inelastic deformation entails basal slip and damage formation in the form of voids, grain-boundary cracks, kinking, and delamination of individual grains, and (ii) the initiation of damage does not result in catastrophic failure, because Ti3 SiC2 can confine the spatial extent of the damage. 相似文献
6.
Jing-Feng Li Toshiro Matsuki Ryuzo Watanabe 《Journal of the American Ceramic Society》2002,85(4):1004-1006
Mechanical alloying (MA) has been used to synthesize Ti3 SiC2 powder from the elemental Ti, Si, and C powders. The MA formation conditions of Ti3 SiC2 were strongly affected by the ball size for the conditions used. MA using large balls (20.6 mm in diameter) enhanced the formation of Ti3 SiC2 , probably via an MA-triggered combustion reaction, but the Ti3 SiC2 phase was not synthesized only by the MA process using small balls (12.7 mm in diameter). Fine powders containing 95.8 vol% Ti3 SiC2 can be obtained by annealing the mechanically alloyed powder at relatively low temperatures. 相似文献
7.
Bouchaib Manoun Surendra K. Saxena Hanns-Peter Liermann Michel W. Barsoum 《Journal of the American Ceramic Society》2005,88(12):3489-3491
We measured the volume thermal expansion of Ti3 SiC2 from 25° to 1400°C using high-temperature X-ray diffraction using a resistive heated cell. A piece of molybdenum foil with a 250 μm hole contained the sample material (Ti3 SiC2 +Pt). Thermal expansion of the polycrystalline sample was measured under a constant argon flow to prevent oxidation of Ti3 SiC2 and the molybdenum heater. From the lattice parameters of platinum (internal standard), we calculated the temperature by using thermal expansion data published in the literature. The molar volume change of Ti3 SiC2 as a function of temperature in °C is given by: V M (cm3 /mol)=43.20 (2)+9.0 (5) × 10−4 T +1.8(4) × 10−7 T 2 . The temperature variation of the volumetric thermal expansion coefficient is given by: αv (°C−1 )=2.095 (1) × 10−5 +7.700 (1) × 10−9 T . Furthermore, the results indicate that the thermal expansion anisotropy of Ti3 SiC2 is quite mild in accordance with previous work. 相似文献
8.
José M. Córdoba María J. Sayagués María D. Alcalá Francisco J. Gotor 《Journal of the American Ceramic Society》2007,90(3):825-830
Titanium silicon carbide (Ti3 SiC2 ) and Ti3 SiC2 -based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti3 SiC2 . High Ti3 SiC2 conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti3 SiC2 . A reaction mechanism, where Ti3 SiC2 nucleates on Ti5 Si3 C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti3 SiC2 . 相似文献
9.
Véronique Gauthier Benoît Cochepin Sylvain Dubois Dominique Vrel 《Journal of the American Ceramic Society》2006,89(9):2899-2907
Ti3 SiC2 is synthesized by self-propagating high-temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time-resolved X-ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti3 SiC2 might be formed from Ti–Si liquid phase and solid TiC x . Finally, the effect of the powders starting composition on the Ti3 SiC2 synthesis is studied. For the investigated initial mixtures, TiC x is always formed as a major impurity together with the Ti3 SiC2 phase. 相似文献
10.
Erdong Wu Erich H. Kisi Daniel P. Riley Ronald I. Smith 《Journal of the American Ceramic Society》2002,85(12):3084-3086
The reactive sintering of 3Ti/SiC/C to form the layered ternary carbide Ti3 SiC2 was studied in situ by time-resolved neutron powder diffraction. A number of intermediate processes occur during the synthesis beginning with the α-β transition in Ti. Concurrent with the α-β transition, two intermediate phases, TiC x and Ti5 Si3 C x ( x ≤ 1), form. These phases account for almost the entire sample in the range 1500–1600°C beyond which they react with each other and a small amount of free C to form the product phase Ti3 SiC2 . 相似文献
11.
Adrish Ganguly Michel W. Barsoum Roger D. Doherty 《Journal of the American Ceramic Society》2007,90(7):2200-2204
In this work, we report on the interdiffusion of Ge and Si in Ti3 SiC2 and Ti3 GeC2 , as well as that of Nb and Ti in Ti2 AlC and Nb2 AlC. The interdiffusion coefficient, D int , measured by analyzing the diffusion profiles of Si and Ge obtained when Ti3 SiC2 –Ti3 GeC2 diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti3 Ge0.5 Si0.5 C2 ), was found to be given by
Dint increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti2 AlC–Nb2 AlC couples was measured in the 1723–1873 K temperature range. The D int for the Matano interface composition, viz. ≈(Ti0.5 ,Nb0.5 )2 AlC, was found to be given by
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter. 相似文献
D
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter. 相似文献
12.
Y. C. Zhou D. T. Wan Y. W. Bao J. Y. Wang D. T. Wan 《International Journal of Applied Ceramic Technology》2006,3(1):47-54
Ti3 SiC2 has many salient properties including low density, high strength and modulus, damage tolerance at room temperature, good machinablity, and being resistant to thermal shock and oxidation below 1100°C. However, the low hardness and poor oxidation resistance above 1100°C limit the application of this material. The poor oxidation resistance at temperatures above 1100°C was because of the absence of protective layer in the scale and the presence of TiC impurity phase. TiC impurity could be eliminated by adding a small amount of Al to form Ti3 Si(Al)C2 solid solutions. Although the high-temperature oxidation resistance was significantly improved for the Ti3 Si(Al)C2 solid solutions, the strength at high temperatures was lost. One important way to enhance the high-temperature strength is to incorporate hard ceramic particles like SiC. In this article, we describe the in situ synthesis and simultaneous densification of Ti3 Si(Al)C2 /SiC composites using Ti, Si, Al, and graphite powders as the initial materials. The effect of SiC content on high-temperature mechanical properties and oxidation resistance were investigated. The mechanisms for the improved high-temperature properties are discussed. 相似文献
13.
In this article, the first part of a two-part study, we report the reaction path and microstructure evolution during the reactive hot isostatic pressing of Ti3 SiC2 , starting with titanium, SiC, and graphite powders. A series of interrupted hot isostatic press runs have been conducted as a function of temperature (1200°–1600°C) and time (0–24 h). Based on X-ray diffractometry and scanning electron microscopy, at 1200°C, the intermediate phases are TiC x and Ti5 Si3 C x . Fully dense, essentially single-phase samples are fabricated in the 1450°–1700°C temperature range. The time-temperature processing envelope for fabricating microstructures with small (3–5 μm), large (∼200 μm), and duplex grains, in which large (100–200 μm) Ti3 SiC2 grains are embedded in a much finer matrix, is delineated. The microstructure evolution is, to a large extent, determined by (i) the presence of unreacted phases, mainly TiC x , which inhibits grain growth; (ii) a large anisotropy in growth rates along the c and a directions (at 1450°C, growth normal to the basal planes is about an order of magnitude smaller than that parallel to these planes; at 1600°C, the ratio is 4); and (iii) the impingement of grains. Ti3 SiC2 is thermally stable under vacuum and argon atmosphere at temperatures as high as 1600°C for as long as 24 h. The influence of grain size on the mechanical properties is discussed in the second part of this study. 相似文献
14.
L. M. Peng 《Journal of the American Ceramic Society》2007,90(4):1312-1314
A layered ternary carbide phase, Ti3 AlC2 , was synthesized by hot pressing from the starting materials of Ti, aluminum, and activated carbon at 1400°C for 2 h. Its composites were also fabricated through addition of micro-sized SiC and partially stabilized zirconia particulates to the pulverized Ti3 AlC2 powders. The polycrystalline Ti3 AlC2 ceramic obtained has a flexural strength of 172 MPa and a fracture toughness of 4.6 MPa·m1/2 , respectively. This compound is relatively soft (Vikers hardness of 2.7 GPa) and exhibits good electrical conductivity with an electrical resistivity of 8.2 μΩ·m. Both the Ti3 AlC2 /SiC and Ti3 AlC2 /ZrO2 composites are superior to the monolithic Ti3 AlC2 ceramic in strength, fracture toughness, and micro-hardness. 相似文献
15.
In this paper, we report a machinable Ti3 SiC2 /hydroxyapatite (HAp) composite prepared by spark plasma sintering. The experimental results of a drilling test demonstrated that the composites exhibit excellent machinability when the Ti3 SiC2 content is higher than 20 vol%, which can be attributed to the improvement in the mechanical and machinable properties of the composites by addition of Ti3 SiC2 phase, which possessess unique mechanical and machinable properties and energy-absorbing mechanisms. The superior mechanical and machinable properties of Ti3 SiC2 /HAp composites suggest that the composite system could be attractive for practical applications of novel biomaterials. 相似文献
16.
A MgAl2 O4 (MA) spinel layer was synthesized on Ti3 AlC2 substrate through the molten salt synthesis (MSS) method. The Ti3 AlC2 substrate was immersed in MgCl2 ·6H2 O powders and treated at 800°, 850°, and 900°C for 4 h in air. A continuous and 10-μm-thick MgAl2 O4 layer was obtained at 900°C, by which the surface hardness of Ti3 AlC2 can be effectively improved. The combined scanning electron microscopy observations and crystal morphology simulation further revealed that the as-formed MgAl2 O4 presents tetragonal bipyramids morphology with (400)-orientation. 相似文献
17.
Chunfeng Hu Yanchun Zhou Yiwang Bao Detian Wan 《Journal of the American Ceramic Society》2006,89(11):3456-3461
Tribological properties of Ti3 SiC2 and Al2 O3 -reinforced Ti3 SiC2 composites (10 and 20 vol% Al2 O3 ) were investigated by using an AISI-52100 bearing steel ball dryly sliding on a linear reciprocating athletic specimen. The friction coefficients were found varying only in a range of 0.1 under the applied loads (2.5, 5, and 10 N), and the wear rates of the composites decreased with increasing Al2 O3 content. The enhanced wear resistance is mainly attributed to the hard Al2 O3 particles nail the surrounding soft matrix and decentrale the shear stresses under the sliding ball to reduce the wear losses. 相似文献
18.
Fangzhi Li Bin Liu Jingyang Wang Yanchun Zhou 《Journal of the American Ceramic Society》2010,93(1):228-234
In this work, bulk Hf3 AlN ceramic was synthesized by an in situ reaction/hot pressing method using Hf and AlN as initial materials. The reaction path during the synthesis process was investigated. Hf3 AlN was found to form via the reaction of Hf and AlN above 1000°C. Furthermore, physical and mechanical properties of Hf3 AlN, such as electrical conductivity, flexural strength, and elastic moduli were also characterized. Similar to typical layered ternary ceramics Ti3 SiC2 and Ti3 AlC2 , Hf3 AlN possesses metallic conductivity and excellent damage tolerance, which is also the first one of this type that has ever been reported to crystallize in an orthorhombic structure. It is believed that a typical layered crystal structure and weak interlayer bondings contribute to the damage tolerance of Hf3 AlN. Moreover, the stiffness of Hf3 AlN can sustain a temperature as high as 1450°C, being 250°C higher than that of Ti3 AlC2 , which renders it a promising high-temperature structural material. 相似文献
19.
The quenching technique was used to study subliquidus and subsolidus phase relations in the pseudobinary system Na2 Ti2 Si2 O11 -Na2 Ti2 Si2 O9 . Both narsarukite (Na2 TiSi4 O11 ) and lorenzenite (Na2 Ti2 Si2 O9 ) melt incongruently. Narsarsukite melts at 911°±°C to SiO2 +liquid, with the liquidus at 1016°C. Lorenzenite melts at 910°±5°C to Na2 Ti6 O13 +liquid; Na2 Ti6 O13 reacts with liquid to form TiO2 and is thus consumed by 985°±5°C. The liquidus occurs at 1252°C. 相似文献
20.
Yong Ming Luo Shu Qin Li Jian Chen Rui Gang Wang Jian Qiang Li Wei Pan 《Journal of the American Ceramic Society》2002,85(12):3099-3101
In the present study, the room-temperature properties of Al2 O3 -Ti3 SiC2 composites with different Ti3 SiC2 contents are determined. The composites are prepared by attrition milling Al2 O3 and Ti3 SiC2 mixture powders followed by spark plasma sintering (SPS) under vacuum. From a closer examination of the dependencies of the electrical conductivity on compositions in this system, we determined the percolation threshold at which an interconnected network of electrically conductive phase arises. Since the hardness of Ti3 SiC2 is lower than that of Al2 O3 , the Vickers hardness decreased with the increasing of Ti3 SiC2 content while the fracture toughness and the strength increased. The maximum strength (673 MPa) and the maximum toughness (9.3 MPa·m1/2 ) were reached in the pure Ti3 SiC2 material. 相似文献