Microstructure and mechanical properties of Si3N4f/Si3N4 composites with different coatings

The Si₃N₄ coating and Si₃N₄ coating with Si₃N₄ whiskers as reinforcement (Si₃N_4w-Si₃N₄) were prepared by chemical vapor deposition (CVD) on two-dimensional silicon nitride fiber reinforced silicon nitride ceramic matrix composites (2D Si₃N_4f/Si₃N₄ composites). The effects of process parameters of as-prepared coating including the preparation temperature and volume fraction of Si₃N_4w on the microstructure and mechanical properties of the composites were investigated. Compared with Si₃N₄ coating, Si₃N_4w-Si₃N₄ coating shows more significant effect on the strength and toughness of the composites, and both strengthening and toughening mechanism were analyzed.     

Fabrication of in-situ self-reinforced Si3N4 ceramic foams for high-temperature thermal insulation by protein foaming method

To meet demand for lightweight and high-strength ceramic foams, in-situ self-reinforced Si₃N₄ ceramic foams, with compressive strength of 13.2–45.9 MPa, were fabricated by protein foaming method combined with sintered reaction-bonded method. For comparison, ordinary protein foamed ceramics with irregular block microstructure were fabricated via reaction-bonded method, which had compressive strength of 3.6–20.5 MPa. Physical properties of these two types of samples were systematically compared. When open porosity was about 80%, both types of Si₃N₄ ceramic foams had excellent thermal insulation properties (<0.15 W m^?1 K^?1), while compressive strength of in-situ self-reinforced samples increased by more than 158% compared with ordinary samples. Under high-temperature oxidation conditions, microstructures of both types of samples were deformed with increase in oxidation temperature. Moreover, after oxidation temperature was increased to 1400 °C, oxidation weight gain decreased from 18.07% for ordinary samples to only 2.18% for self-reinforced samples. Thus, high-temperature oxidation resistance of Si₃N₄ ceramic foams was greatly improved.     

Electromagnetic wave absorption properties of hot-pressed Si3N4-SiC ceramic nanocomposites

High-density Si₃N₄-SiC ceramic nanocomposites have exceptional mechanical properties, but little is known about their electromagnetic wave absorption (EMA) capabilities. In this paper, the effects of sintering temperature and starting material compositions on the dielectric and EMA properties of hot-pressed Si₃N₄-SiC ceramic nanocomposites were investigated. The real and imaginary permittivities of Si₃N₄-SiC ceramic nanocomposites increase with increasing sintering temperature or SiC content, particularly at the sintering temperature of 1850°C and SiC content of 50 wt.%. This is primarily due to the improvement of interfacial and defect polarizations, which is caused by the doping of nitrogen into the SiC nanocrystals during the solution-precipitation process. The real and imaginary permittivities of Si₃N₄-SiC ceramic nanocomposites show decreasing trends as sintering aid content increases. Si₃N₄-SiC ceramic composites have both good EMA and mechanical properties when they are sintered at 1850°C with 30 wt.% SiC and 5–8 wt.% sintering aids. The minimum reflection loss and maximum flexural strength reach -58 dB and 586 MPa, respectively. Materials with multilayered structural designs have both strong and broad EMA properties.     

Preparation and mechanical properties of Si3N4 nanocomposites reinforced by Si3N4@rGO particles

A new type of reduced graphene oxide-encapsulated silicon nitride (Si₃N₄@rGO) particle was synthesized via an electrostatic interaction between amino-functionalized Si₃N₄ particles and graphene oxide (GO). Subsequently, the Si₃N₄@rGO particles were incorporated into a Si₃N₄ matrix as a reinforcing phase to prepare nanocomposites, and their influence on the microstructure and mechanical properties of the Si₃N₄ ceramics was investigated in detail. The microstructure analysis showed that the rGO sheets were uniformly distributed throughout the matrix and firmly bonded to the Si₃N₄ grains to form a three-dimensional carbon network structure. This unique structure effectively increased the contact area and load transfer efficiency between the rGO sheets and the matrix, which in turn had a significant impact on the mechanical properties of the nanocomposites. The results showed that the nanocomposites with 2.25 wt.% rGO sheets exhibited mechanical properties that were superior to monolithic Si₃N₄; the flexural strength increased by 83.5% and reached a maximum value of 1116.4 MPa, and the fracture toughness increased by 67.7% to 10.35 MPa·m^1/2.     

Atomic-level modeling and computation of intergranular glassy film in high-purity Si3N4 ceramics

A model for intergranular glassy film (IGF) at grain boundaries in Si₃N₄ is proposed. The model agrees well with experimental information available. Although it has periodicity, atomistic simulations using the model enable to elucidate the rationale for the presence of the IGF. Amorphous models obtained by molecular dynamics based on the crystalline model enable atomistic simulations to address further issues related the IGF: it is found that the IGF plays an important role to relieve the strain due to misorientation of adjacent Si₃N₄ grains, that equilibrium IGF thickness is determined by the balance between the strain relief and energy penalty of silicon oxynitride constituting the IGF, and that both O and N are needed in the IGF to provide flexibility of networking structure of the IGF as well as to minimize chemical mismatch between adjacent Si₃N₄ grains and the IGF. Equilibrium IGF composition is successfully estimated for the first time.     

Microstructure,high-temperature mechanical and dielectric properties of novel Si3N4 f/SiNO wave-transparent composites

Continuous Si₃N₄ fiber reinforced SiNO matrix composites (Si₃N_4 f/SiNO composites) were innovatively prepared for long-time high-temperature resistant wave-transparent materials of hypersonic aircraft. The microstructure, high-temperature mechanical and dielectric properties of Si₃N_4 f/SiNO composites were investigated in detail. The as-fabricated Si₃N_4 f/SiNO composites have homogeneous SiNO matrix distribution for the special winding process, which is beneficial for the mechanical strength and wave-transparent properties. The average tensile strength and flexural strength at room temperature is 87.8 MPa and 171.2 MPa respectively, which suggests Si₃N_4 f/SiNO composites have excellent mechanical strength. The tensile strength value decreases to 54.6 MPa after heat-treated at 1000 ℃ for the surface reactions between the SiNO matrix and Si₃N₄ fibers. After heat-treated at 1550 ℃, the composites have the tensile strength value of 24.2 MPa for the high strength retention rate of Si₃N₄ fibers at this temperature. Si₃N_4 f/SiNO composites have excellent room temperature dielectric properties and excellent dielectric stability in different frequency bands (7–18 GHz). The dielectric constant values vary from 3.69 to 3.75 while the dielectric loss attains the order of 10^?3. The dielectric constants and dielectric loss of Si₃N_4 f/SiNO composites are relatively stable from RT to 800 ℃. The as-fabricated Si₃N_4 f/SiNO composites that have excellent high temperature resistance and dielectric properties are the ideal high temperature wave-transparent composites.     

Characterisation and properties of low-conductivity microporous magnesia based aggregates with in-situ intergranular spinel phases

Development of microporous magnesia based aggregates serving as working-line refractories have great significance in reducing energy loss and saving resource. Microporous magnesia-based aggregates were fabricated at 1780 °C by in-situ decomposition of magnesite with addition of nano-sized Al₂O₃. Intergranular MgAl₂O₄ phases formed in situ decreased the closed-pore size, thermal conductivity and improved the ceramic bonding and thermal shock resistance. Furthermore, the results suggested that pore size distribution was the dominate factor affecting thermal conductivity. Thermal contact resistance owing to networks of intergranular spinel in magnesia could improve thermal insulation performance effectively. The mismatch of thermal expansion coefficient between spinel and magnesia and the micro-scale closed pores enhanced thermal shock resistance by accommodating thermal stress and suppressing crack propagation. Microporous magnesia-based aggregates with 3 wt% nano-sized Al₂O₃ presented a mean pore size of 3.42 μm, thermal conductivity of 5.76 W m^?1 k^?1 (800 °C), a cold compressive strength of ~285 MPa, and a residual strength retention rate of 65.0% after thermal shock cycles. The low-conductivity microporous magnesia-based aggregates with excellent thermal shock resistance show promise for future application in working-lining lightweight refractories.     

氮化硅及其微粉的制备

本文介绍了氮化硅的性能、应用范围以及其微粉的制备方法。     

氮化硅及其微粉的制备

介绍了氮化硅的性能、应用范围以及其微粉的制备方法。     

A high-temperature structural and wave-absorbing SiC fiber reinforced Si3N4 matrix composites

The SiC_f/Si₃N₄ composite with low–high–low permittivity sandwich structure was designed for high-temperature electromagnetic (EM) wave absorption and mechanical stability. The SiC_f/Si₃N₄ possessed the remarkable mechanical properties at room temperature (the flexural strength is 357 ± 16 MPa and the fracture toughness is 10.8 ± 1.7 MPa m^1/2) for the strong fiber strength, moderate interface bonding strength and uniform matrix. Furthermore, the retention rate is as high as 80% at 800 °C. The A/B/C nanostructure and the sandwich meta-structure endowed the SiC_f/Si₃N₄ with an excellent EM absorbing property at room temperature. The SiC_f/Si₃N₄ still absorbed 75% of the incident EM waves energy in X and Ku bands when the temperature increases up to 600 °C, which is only 6% lower than that at room temperature, for the partial compensation of the decreased interfacial polarization loss for the increased conductivity loss and dipole polarization loss.     

Microstructure and properties of Si3N4 foam ceramics modified by in-situ self-grown nanowires

In this study, Si₃N₄ nanowires were prepared by one-step method in Si₃N₄ foam ceramics. This was accomplished via simple and safe pre-embedded powder treatment combined with reaction sintering method. Nitriding temperature and time were determined to have influence on the production of nanowires. Under used sintering conditions with nitriding at 1400 °C for 4–6 h or at 1450 °C for 2–6 h, densely distributed nanowires were obtained in the sample, and the formed nanowires were either straight or bent. The straight nanowires were completely crystalline, while the bent nanowires had staggered crystalline-amorphous distribution at the bending position. Nanowires in the sample did not substantially affect open porosity and density of the sample. However, the analysis of typical samples with or without dense nanowires revealed that the existence of densely distributed nanowires reduced median pore diameter of windows on the pore walls from 60.7 μm to 21.4 μm and increased BET specific surface area of the sample by 46.7%. In addition, the presence of densely distributed nanowires in pores enhanced compressive strength of the sample by at least 10%.     

Formation mechanism of Si3N4 in reaction-bonded Si3N4-SiC composites

The formation mechanism and thermodynamics of Si₃N₄ in reaction-bonded Si₃N₄-SiC materials were analyzed. There are two kinds of Si₃N₄, fibroid α-Si₃N₄ and columnar β-Si₃N₄, which are formed by different processes in Si₃N₄-SiC materials. Silicon reacts with oxygen, forming gaseous SiO and reducing oxygen partial pressure. SiO(g) diffuses from central to peripheral sections of blocks and reacts with nitrogen, thus forming Si₃N₄, mainly in peripheral sections. The reaction between silicon and oxygen causes the consumption of oxygen and leads to low oxygen partial pressure in the sintering system, which allows silicon to react with nitrogen directly generating Si₃N₄in situ. SiO(g) reacts with nitrogen forming Si₃N₄ at both central and peripheral sections of block. The non-uniform distribution of Si₃N₄ and uneven microstructure is caused by the generation process, indicating that it is unavoidable in Si₃N₄-SiC composites.     

Effects of heat treatment on mechanical properties of 3D Si3N4f/BN/Si3N4 composites by PIP

The fabrication of three-dimensional silicon nitride (Si₃N₄) fiber-reinforced silicon nitride matrix (3D Si₃N_4f/BN/Si₃N₄) composites with a boron nitride (BN) interphase through precursor infiltration and pyrolysis (PIP) process was reported. Heat treatment at 1000–1200 °C was used to analyze the thermal stability of the Si₃N_4f/BN/Si₃N₄ composites. It was found after heat treatment the flexural strength and fracture toughness change with a pattern that decrease first and then increase, which are 191 ± 13 MPa and 5.8 ± 0.5 MPa·m^1/2 respectively for as-fabricated composites, and reach the minimum values of 138 ± 6 MPa and 3.9 ± 0.4 MPa·m^1/2 respectively for composites annealed at 1100 °C. The influence mechanisms of the heat treatment on the Si₃N_4f/BN/Si₃N₄ composites include: (Ⅰ) matrix shrinkage by further ceramization that causes defects such as pores and cracks in composites, and (Ⅱ) prestress relaxation, thermal residual stress (TRS) redistribution and a better wetting at the fiber/matrix (F/M) surface that increase the interfacial bonding strength (IBS). Thus, heat treatment affects the mechanical properties of composites by changing the properties of the matrix and IBS, where the load transfer efficiency onto the fibers is fluctuating by the microstructural evolution of matrix and gradually increasing IBS.     

Detection of phases in Fe-doped YSZ by XRD and Raman spectroscopy

Samples of 8 mol% Y₂O₃-stabilized ZrO₂ (8YSZ) doped with Fe were prepared and sintered at 1350°C in air or argon atmosphere. The sintered samples were characterized by SEM, XRD, and Raman spectroscopy. Raman spectroscopy and XRD were found to complement each other in phase identification; all the sintered samples were shown to possess tetragonal phase (t”) whose axial ratio (c/a) is equal to 1 in the cubic matrix. The Raman peak at 616 cm⁻¹, in general, was seen to broaden with increase in Fe concentration for both sintering atmospheres.     

Effects of heat treatment on mechanical and dielectric properties of 3D Si3N4f/BN/Si3N4 composites by CVI

In this study, three-dimensional silicon nitride fiber-reinforced silicon nitride matrix (3D Si₃N_4f/BN/Si₃N₄) composites with a boron nitride (BN) interphase were fabricated through chemical vapor infiltration. Through comparing the changes of microstructure, thermal residual stress, interface bonding state, and interface microstructure evolution of composites before and after heat treatment, the evolution of mechanical and dielectric properties of Si₃N_4f/BN/Si₃N₄ composites was analyzed. Flexural strength and fracture toughness of composites acquired the maximum values of 96 ± 5 MPa and 3.8 ± 0.1 MPa·m^1/2, respectively, after heat treatment at 800 °C; however, these values were maintained at 83 ± 6 MPa and 3.1 ± 0.2 MPa·m^1/2 after heat treatment at 1200 °C, respectively. The relatively low mechanical properties are mainly attributed to the strong interface bonding caused by interfacial diffusion of oxygen and subsequent interfacial reaction and generation of turbostratic BN interphase with relatively high fracture energy. Moreover, the Si₃N_4f/BN/Si₃N₄ composites also displayed moderate dielectric constant and dielectric loss fluctuating irregularly around 5.0 and 0.04 before and after heat treatment, respectively. They were mainly determined based on the intrinsic properties of materials system and complex microstructure of composites.     

Thermal conductivity and mechanical properties of Si3N4 ceramics with binary fluoride sintering additives

Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).     

Cost effective preparation of Si3N4 ceramics with improved thermal conductivity and mechanical properties

High-purity silicon powder is used as the starting material for cost-effective preparation of silicon nitride ceramics with both high thermal conductivity and excellent mechanical properties using RE₂O₃ (RE=Y, La or Er) and MgO as sintering additives. Nitridation is a key procedure that would affect the properties of green bodies and the sintered samples. The β: (α+β) ratio can be increased as the samples nitrided at 1450ºC and a large amount of long rod-like β-Si₃N₄ grains were developed in the samples. It was found that the addition of Er₂O₃-MgO could help to improve the mechanical properties of the sintered Si₃N₄ ceramics, the thermal conductivity, flexural strength and fracture toughness of the sample were 90 W/(m∙K), 953±28.3 MPa and 10.64±0.61 MPa·m^1/2, respectively. The RE³⁺ species with larger ionic radius tended to increase the oxygen of nitrided samples and decrease N/O ratio (triangle grain boundary) of sintered samples.     

流延法在Si3N4块体及Si3N4/BN层状材料制备中的应用

本采用流延法制备了Si3N4块体及Si3N4/BN层状材料,流延法已经在陶瓷的制备工艺中得到了广泛的应用,但是很少用于Si3N4体系,尤其是水基流延法。用流法制备Si3N4/BN层状材料时,可以较为容易地控制坯片的厚度,得到性能稳定的层状材料。     

Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4 composites in X-band

The high-temperature dielectric behavior of multilayer C_f/Si₃N₄ composites fabricated by gelcasting and pressuureless sintering was intensively investigated at temperatures coverage up to 800 °C in X-band (8.2–12.4 GHz). Experimental results have shown the permittivity of Si₃N₄ matrix exhibits excellent thermo-stability with temperature coefficient lower than 10⁻³ °C⁻¹. Besides, both the real and imaginary parts of permittivity of multilayer C_f/Si₃N₄ composites exhibit positive temperature coefficient characteristic which attributed to the enhancement of space charge polarization. Furthermore, temperature-dependent permittivity of C_f/Si₃N₄ composites is demonstrated to be well distributed on circular arcs with centers actually keep around the real ($\epsilon \text{'}$) axis in Cole-Cole plane. Finally, the relaxation time for multilayer C_f/Si₃N₄ composites gradually increases from 216.1 ps to 250.2 ps when heated from room temperature to 800 °C, and is almost twice as much as a single cycle for electromagnetic wave in X-band which leads to continuous decrease in permittivity with frequency.