Asynchronous cellular logic network as a co‐processor for a general‐purpose massively parallel array

This paper demonstrates an implementation of an asynchronous cellular processor array that facilitates binary trigger‐wave propagations, extensively used in various image‐processing algorithms. The circuit operates in a continuous‐time mode, achieving high operational performance and low‐power consumption. An integrated circuit with proof‐of‐concept array of 24×60 cells has been fabricated in a 0.35µm three‐metal CMOS process and tested. Occupying only 16×8µm² the binary wave‐propagation cell is designed to be used as a co‐processor in general‐purpose processor‐per‐pixel arrays intended for focal‐plane image processing. The results of global operations such as object reconstruction and hole filling are presented. Copyright © 2010 John Wiley & Sons, Ltd.     

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range,voltage reference

A low‐voltage, low‐power, low‐area, wide‐temperature‐range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190 °C (?60 to 130 °C) while consuming only 4 μW at 0.75 V. It performs a high‐order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade‐off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18‐µm standard CMOS technology and occupies an area of 0.039 mm². The proposed reference circuit is suitable for high‐precision, low‐energy‐budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright © 2015 John Wiley & Sons, Ltd.     

Switched‐capacitor‐voltage‐multiplier boost DC–AC inverter with adaptive stages

A multistage switched‐capacitor‐voltage‐multiplier inverter (SCVMI) is proposed with a variable‐conversion‐ratio phase generator and a sinusoidal pulse‐width‐modulation controller for boost DC–AC conversion and high‐efficiency regulation. Its power unit contains: SCVM booster and H‐bridge. The SCVM booster includes two m_c‐stage switched‐capacitor cells and two n_c‐stage switched‐capacitor cells in the interleaving operation to realize DC–DC boost gain of m_c × n_c at most. Here, the variable‐conversion‐ratio phase generator is suggested and adopted to change the running stage number and topological path for a suitable gain level of m × n (m = 1, 2, ?,m_c, n = 1, 2, ?,n_c) to improve efficiency, especially for the lower AC output. The H‐bridge is employed for DC–AC conversion, where four switches are controlled by sinusoidal pulse‐width‐modulation not only for full‐wave output but also for output regulation as well as robustness to source/loading variation. Some theoretical analysis and design include: SCVMI model, steady‐state/dynamic analysis, conversion ratio, power efficiency, stability, capacitance selection, output filter, and control design. Finally, the closed‐loop SCVMI is simulated, and the hardware circuit is implemented and tested. All the results are illustrated to show the efficacy of this scheme. Copyright © 2011 John Wiley & Sons, Ltd.     

Analysis and design of a high‐compliance ultra‐high output resistance current mirror employing positive shunt feedback

This paper reports a novel high‐compliance, very accurate and ultra‐high output resistance current mirror. These features are achieved by employing a combination of negative and positive feedbacks in the proposed circuit. This makes the proposed current mirror unique in gathering ultra‐high output resistance, high compliance, and high accuracy ever demanded merits. The principle of operation of this structure is discussed, its main formulas are derived and its outstanding performance is verified by Cadence post‐layout simulations. Designed in the IBM 130‐nm standard CMOS process, the circuit consumes 230 × 110 µm² of silicon area. Post‐layout simulation results indicate that with a 3.3‐V power supply, output voltage compliance of 0.93V_Supply is achieved at a maximum output current of 96 μA. Moreover, an extremely ultra‐high output resistance of 320 GΩ is achieved, which is one of the highest reported values of output resistance for current mirrors implemented using regular CMOS technology. The ?3 dB upper cut‐off frequency of the proposed circuit is 100 MHz and the output/input current transfer error is 0.1%. The whole circuit, including bias circuitry, consumes 0.57 mW when delivering 96 μA to the load. Copyright © 2014 John Wiley & Sons, Ltd.     

Representation,methods, and circuits for time‐based conversion and computation

In this paper, we present an efficient representation of the analog signal using the inter‐pulse interval (IPI) time. Based on this representation, methods and circuits for conversion and computation have been developed. To validate these methods and circuits, a test chip has been fabricated using a 0.35µm mixed‐signal CMOS process. Together, the circuits occupy 59.52 × 10^?3mm² of chip area and consume 8.8 mW of power from a 3.2 V supply. Test results at 10 MHz and simulations results at 100 MHz show good accuracy over ±600mV range. Copyright © 2010 John Wiley & Sons, Ltd.     

A new efficient SC integrator scheme for high‐speed low‐power applications

A new solution to implement efficient switched‐capacitor (SC) integrators is presented. In the proposed scheme, voltage buffers are opportunely introduced in order to prevent direct connection between the output and the capacitive feedback network of the circuit that characterizes classical SC integrator topologies during the charge transfer phase. Design guidelines to optimize the settling performances of the proposed circuit are also given. To demonstrate the possible advantages of the new solution, the proposed integrator is designed in a commercial 0.35?µm CMOS technology. It is shown that compared with classical SC integrator topologies, the proposed configuration allows a significant improvement of the integrator speed to be achieved for a given power budget. Copyright © 2010 John Wiley & Sons, Ltd.     

Gaussian pulse approximation using standard CMOS and its application for sub‐GHz UWB impulse radio

Gaussian pulse is widely used in communication systems. The true Gaussian function is not physically realizable, but it can be approximated through linear functions. This paper presents a Gaussian pulse approximation approach to generate a quasi‐Gaussian pulse by using the transient response of a CMOS inverter. The basic structure of the proposed design includes a digital variable square pulse generator, a Gaussian pulse generator and a small antenna model. The digital variable square pulse generator makes the amplitude and width of the generated quasi‐Gaussian pulse tunable. The proposed pulse generator works well for three different electrical small antenna models. The simulation results show that the generated pulse approximates the Gaussian shape very well and the radiated signal at the antennas is compliant with the Federal Communication Commission's spectral mask for the 0–960 MHz band. The simple structure of this Gaussian pulse generator lends itself to a low‐power, single‐chip UWB transceiver solution. Copyright © 2008 John Wiley & Sons, Ltd.     

Design criterion for high‐speed low‐power SC circuits

The settling behavior of switched‐capacitor (SC) circuits is investigated in this paper. The analysis is performed for typical SC circuits employing two‐stage Miller‐compensated operational amplifiers (op‐amps). It aims to evaluate the real effectiveness of the conventional design approach for the optimization of op‐amp settling performances. It is demonstrated that the classical strategy is quite inaccurate in typical situations in which the load capacitance to be driven by the SC circuit is small. The presented study allows a new settling optimization strategy based on an advanced circuit model to be defined. As shown by design examples in a commercial 0.35‐ µm CMOS technology, the proposed approach guarantees a significant settling time reduction with respect to the existing settling optimization strategy, especially in the presence of small capacitive loads to be driven by the SC circuit. Copyright © 2010 John Wiley & Sons, Ltd.     

Energy‐efficient single‐clock‐cycle binary comparator

A new fast low‐power single‐clock‐cycle binary comparator is presented. High speed is assured by using parallel‐prefix architecture, whereas low power is guaranteed by reducing the switching activities of the internal nodes. When implemented with the ST 90 nm 1 V CMOS technology, the proposed circuit exhibits a 4.5 GHz maximum running frequency and 0.77µW/ MHz energy dissipation. Copyright © 2010 John Wiley & Sons, Ltd.     

A CMOS voltage regulator for passive RFID tag ICs

A low‐power voltage regulator for passive RFID tag ICs is proposed in this paper. It consists of a self‐biased mutually compensated voltage reference, a low dropout (LDO) voltage regulation circuit and a power‐on‐reset (POR) circuit. It is fabricated in a commercial 0.18?µm CMOS technology and applied to a passive UHF RFID tag IC. The total quiescent current is 700 nA under a 1.8‐V supply. The output voltage of the regulator is 1.45 V with load capability of 50 µA. The temperature coefficients of the voltage reference and the output voltage are only 9 and 43 ppm/^°C, respectively. A POR signal with width pulse of 150 ns is generated for the digital part in the tag IC. Copyright © 2010 John Wiley & Sons, Ltd.     

High input impedance voltage‐mode first‐order all‐pass sections

This paper proposes six new first‐order voltage‐mode all‐pass sections (VM‐APSs) based on three general topologies. Each circuit uses two differential voltage current conveyors and three grounded passive components. All the circuits possess high input impedance and easy control of pole frequency either by a simple matching of resistors (two equal‐valued resistors) for the three canonical circuits or by a single resistor for three non‐canonical circuits. PSPICE simulation results using real device 0.5µ CMOS parameters are given to validate the proposed circuits. Copyright © 2007 John Wiley & Sons, Ltd.     

Low power switched‐current circuits with low sensitivity to the rise/fall time of the clock

The switched‐current (SI) technique permits realizing analog discrete‐time circuits in standard digital CMOS technology. A very important property of the analog part of a system on a chip is the possibility it offers for realizing some functions of a digital circuit, but with reduced power consumption. In this paper, a low power SI integrator is presented. It is shown that an integrator consuming a fraction of a milliwatt can be designed in 0.35µm CMOS technology with the use of narrow transistor channels, and with the channel length as a design parameter. The impact of the rise/fall time of the clock signal on the integrator operation is observed. It is shown that this effect can be reduced when the proper switch dimensions are taken for the integrator. Analysis and measurements of the integrator noise are presented. The integrator was built with equal size transistors, yielding less sensitivity to variations in production parameters. An experimental chip in 0.35µm CMOS technology was fabricated, and measurements are compared with results obtained during analysis and simulations. In order to verify the properties of the designed integrator experimentally, a first‐order filter is built with the use of elementary cells on the chip. Copyright © 2008 John Wiley & Sons, Ltd.     

A 5‐MHz AT‐cut quartz crystal oscillating circuit functioning in 350 nA

An oscillating circuit functioning at ultra low power (350 nA) for a 5‐MHz AT‐cut quartz crystal oscillator was investigated. This circuit has a resistance between the power terminal of the CMOS‐IC and the power supply, and another between the earth terminal of the CMOS‐IC and the ground (GND). These resistances discourage an inrush of current, and set a gain (g_m) necessary for oscillating the circuit at minimum. The developed circuit is quite simple, but enables driving at once‐unthinkable, low power (below 1 µA). © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Micropower high current‐drive class AB CMOS current‐feedback operational amplifier

A novel CMOS current‐feedback operational amplifier (CFOA) aimed to low‐power applications is proposed. The use of a compact class AB implementation allows high current‐drive capability and simultaneously very low quiescent power consumption. Measurement results of a fabricated prototype show for an inverting configuration a closed‐loop bandwidth of 1 MHz independent of gain setting, and a slew rate of 2V/µs for a load capacitance of 30 pF and a quiescent power consumption of 264µW. Copyright © 2010 John Wiley & Sons, Ltd.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

A new fast‐response buck converter using accelerated pulse‐width‐modulation techniques

A new fast‐response buck converter using accelerated pulse‐width‐modulation techniques is proposed in this article. The benefits of the accelerated pulse‐width‐modulation technique is fast‐transient response, simple‐compensation design, and no requirement for slope compensation; furthermore, some power management problems are minimized, such as EMI (Electro Magnetic Interference), size, design complexity, and cost. The traditional voltage‐mode speed is slower with the transient response, so an accelerated pulse‐width‐modulation technique is used to solve the problem of slowed transient response in this article. The proposed buck converter has excellent conversion efficiency with a wide load conditions. The proposed buck converter has been fabricated with TSMC 0.35 µm CMOS 2P4M processes, and the total chip area is 1.32 × 1.22 mm². Maximum output current is 300 mA when the output voltage equals 1.8 V. When the supply voltage is 3.6 V, the output voltage can be 1–2.6 V. Maximum transient response is less than 5 µs. The simulation and experimental results are presented in this article. Copyright © 2011 John Wiley & Sons, Ltd.     

A 10 b 25 MS/s 4.8 mW 0.13 µm CMOS ADC with switched‐bias power‐reduction techniques

This paper proposes a 10 b 25 MS/s 4.8 mW 0.13 µm CMOS analog‐to‐digital converter (ADC) for high‐performance portable wireless communication systems, such as digital video broadcasting, digital audio broadcasting, and digital multimedia broadcasting (DMB) systems, simultaneously requiring a low‐voltage, low‐power, and small chip area. A two‐stage pipeline architecture optimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate, while switched‐bias power‐reduction techniques reduce the power consumption of the power‐hungry analog amplifiers. Low‐noise reference currents and voltages are implemented on chip with optional off‐chip voltage references for low‐power system‐on‐a‐chip applications. An optional down‐sampling clock signal selects a sampling rate of 25 or 10 MS/s depending on applications in order to further reduce the power dissipation. The prototype ADC fabricated in a 0.13 µm 1P8M CMOS technology demonstrates a measured peak differential non‐linearity and integral non‐linearity within 0.42 LSB and 0.91 LSB and shows a maximum signal‐to‐noise‐and‐distortion ratio and spurious‐free dynamic range of 56 and 65 dB at all sampling frequencies up to 25 MHz, respectively. The ADC with an active die area of 0.8 mm² consumes 4.8 and 2.4 mW at 25 and 10 MS/s, respectively, with a 1.2 V supply. Copyright © 2008 John Wiley & Sons, Ltd.     

RF transmitter using the dual‐pulse position modulation method for low‐power smart micro‐sensing chip

This paper presents a low‐power radio frequency (RF) transmitter using dual‐pulse position modulation (DPPM) for a smart micro‐sensing chip (SMSC) with sensors and large scale integrated circuit (LSI) on the same chip. The DPPM method is presented by a fixed pulse and a variable pulse within the same time frame. The distance between the fixed pulse and the variable pulse describes the amplitude of the input signal. A modulator and a ring oscillator were designed for the RF transmitter using the DPPM method. In the modulator, the pulse width modulation (PWM) signal is generated by the intersective method, and narrow pulses are extracted at the rising and falling positions of the generated PWM signal. The designed oscillator has the function of an oscillation controller. The RF transmitter was fabricated with sensors for an SMSC by complementary metal–oxide–semiconductor (CMOS) technology. The power consumption of the fabricated modulator was 4.5 mW. The power consumption of the proposed RF transmitter was measured as 7.0–7.3 mW at an input signal of 0.8–2.5 V. The RF transmitter using the DPPM method was able to reduce the power consumption by a maximum of 50.3% compared to a transmitter using the PWM method, because in the latter the dissipated power was 8.4–14.5 mW at the same input signal. © 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Wireless power charger for wearable medical devices with in‐band communication

A wireless power charger integrated circuit has been developed for wearable medical devices in a 0.18‐µm Bipolar, Complementary metal‐oxide‐semiconductor, and Lightly‐Doped Metal‐Oxide‐Semiconductor (BCDMOS) process. A passive full‐wave rectifier consisting of Schottky diodes and cross‐coupled n‐type Metal‐Oxide‐Semiconductor (nMOS) transistors performs the alternating current to direct current power conversion without any reverse leakage current. To charge a battery, a linear charger circuit follows the passive rectifier instead of a switching charger circuit for the small form factor of wearable medical devices. An in‐band communication circuit notifies the proper connection of the wireless power receiver and the battery charging status to the charging pad (wireless power transmitter) through the wireless power transmission channel. The wireless power charger integrated circuit occupies 1.44‐mm² silicon area and shows 31.7% power efficiency when the charging current is 26.6 mA. Copyright © 2015 John Wiley & Sons, Ltd.     

A low‐voltage band‐gap reference circuit with second‐order analyses

A new band‐gap reference (BGR) circuit employing sub‐threshold current is proposed for low‐voltage operations. By employing the fraction of V_BE and the sub‐threshold current source, the proposed BGR circuit with chip area of 0.029mm² was fabricated in the standard 0.18µm CMOS triple‐well technology. It generates reference voltage of 170 mV with power consumption of 2.4µW at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from ?20 to 100^°C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively. Copyright © 2010 John Wiley & Sons, Ltd.