溅射压强对ITO/Cu2O复合膜结构和光学性能的影响

利用脉冲磁控溅射制备技术,以氧化铟锡(ITO)导电玻璃为基底,采用单质金属Cu 靶作为溅射靶,在O₂和Ar的混合气氛下沉积了Cu₂O薄膜。通过调控溅射压强,研 究了脉冲磁控溅射沉积法在不同溅 射压强下对Cu₂O薄膜的物相结构、表面形貌及光学性能的影响。结果表明,在O₂、Ar流 量比(O₂/Ar)为20∶90的气 氛条件下,在2～3Pa的溅射压强范围内,可获得纯相的Cu₂O薄膜;薄膜表面形貌依赖于 溅射压强,薄膜表面粗糙度的 均方根(RMS)值随溅射压强的增大而减小;在ITO上沉积Cu₂O 薄膜后,薄膜的光学吸收边红移至780 nm, ITO/Cu₂O复合膜的光谱吸收范围拓展至300～780 nm,复合膜的吸收强度随溅射压强的增 大而减小,光学带隙E_g 随溅射压强的增大而增大,E_g值为2.28～2.39eV。     

渠道火花烧蚀法制备In2O3∶Mo透明导电薄膜

采用渠道火花烧蚀技术在普通玻璃基板上制备了掺钼氧化铟In₂O₃∶Mo透明导电薄膜，研究了烧蚀时氧气压强对薄膜光电性能的影响. 在基板温度Ts=350℃时，薄膜的电阻率和载流子浓度随氧气压强增大分别呈凹形和凸形的变化趋势. 薄膜电阻率最小值是4.8e-4Ω·cm，载流子浓度为7.1e20cm^-3. 载流子迁移率最高可达49.6cm²/ (V·s) . 可见光区域平均透射率大于87%以上，由紫外光电子谱分析得到薄膜的表面功函数为4.6eV. X射线衍射分析表明，薄膜结晶性良好并在（222）晶面择优取向生长. 原子力显微镜观察薄膜样品表面得到方均根粗糙度为0.72nm,平均粗糙度为0.44nm，峰谷最大差值为15.4nm.     

ITO/Ag/AgNW新型复合透明导电薄膜性能研究

采用磁控溅射和湿法涂布技术制备了一种ITO/Ag/AgNW结构的新型复合透明导电薄膜。研究其光学、电学等性能发现:ITO/Ag/AgNW薄膜在400~700nm的平均透过率高于ITO/Ag/ITO薄膜,且方块电阻远小于ITO/Ag/ITO薄膜,达到6.9Ω/□;耐弯折性能测试后,其方块电阻约增加62%,达11.2Ω/□。研究结果表明,这种新型的复合透明导电薄膜具有低阻、高透及耐弯折良好的特性,在柔性显示领域具有一定的应用潜力。     

退火处理对ITO表面特性及有机发光器件性能的影响

为了改善有机发光器件（OLEDs）的性能，在0～600℃不同温度下对ITO透明导电玻璃进行了退火处理。SEM观察到随退火温度的升高，ITO表面粗糙度增加；四探针电阻测试结果显示，在300℃以上温度退火后ITO表面电阻率有明显增加。用退火前后的ITO玻璃作为阳极制备了OLEDs，器件结构为ITO／TPD／Alq3／Al，比较器件的电流密度-电压特性曲线测试结果表明，ITO薄膜的热处理温度对OLEDs性能有显著的影响。     

溶胶-凝胶法制备ITO薄膜的光电性能研究

采用溶胶-凝胶旋转涂膜工艺,在普通玻璃基片上制备了掺锡氧化铟(ITO)纳米透明导电薄膜。采用紫外-可见透射光谱和四探针技术,研究了不同Sn掺杂量、不同热处理温度和热处理时间以及不同涂层对薄膜光学和电学性能的影响。结果表明薄膜的方块电阻随Sn掺杂量的增大和热处理温度的升高先降低后增加,在适宜的温度范围内薄膜在可见光区平均透过率随热处理温度升高而增加。在一定的温度下,随着热处理时间的延长,ITO薄膜的方块电阻先降低后增加,透射率先增加后降低。在最佳工艺条件下,采用溶胶-凝胶法制备的ITO薄膜平均可见光透过率达86%,薄膜方阻为322Ω/□。     

有机玻璃衬底磁控溅射ITO膜的制备与性能研究

在低温条件下采用直流磁控溅射法在有机玻璃(PMMA)衬底上制备了ITO薄膜。分别采用分光光度计、四探针测试仪研究了底涂层、衬底温度、氧流量、溅射时间对PMMA上沉积的ITO薄膜性能的影响。研究结果表明:涂覆底涂层有助于ITO成膜;衬底温度影响薄膜的方块电阻值;适当增大O2流量可以提高薄膜的透射率,但过高的O2流量降低薄膜的导电性;溅射时间延长,方块电阻值减小。优化工艺后制备的ITO薄膜为非晶态膜,可见光平均透过率达83.5%,方块电阻为22Ω/□。     

有机玻璃衬底磁控溅射ITO膜的制备与性能研究

在低温条件下采用直流磁控溅射法在有机玻璃(PMMA)衬底上制备了ITO薄膜。分别采用分光光度计、四探针测试仪研究了底涂层、衬底温度、氧流量、溅射时间对PMMA上沉积的ITO薄膜性能的影响。研究结果表明: 涂覆底涂层有助于ITO成膜; 衬底温度影响薄膜的方块电阻值; 适当增大O2流量可以提高薄膜的透射率, 但过高的O2流量降低薄膜的导电性; 溅射时间延长, 方块电阻值减小。优化工艺后制备的ITO薄膜为非晶态膜, 可见光平均透过率达83.5%, 方块电阻为22Ω/□。     

衬底温度对ITO/Ga2O3深紫外透明导电薄膜性能的影响

用磁控溅射的方法在石英玻璃上制备了ITO/Ga₂O₃双层膜。用X射线衍射仪、扫描电镜、双光束分光光度计和霍尔效应测试仪研究了衬底温度对ITO/Ga₂O₃双层膜的结构、表面形貌、光学性能和电学性能的影响。双层膜结构受衬底温度的影响,当衬底温度从100C 升高到 350C时,薄膜的电阻率由6.71′10^-3 Ω.cm 降到 1.91′10^-3 Ω.cm。衬底温度300C制备的ITO(22nm)/Ga₂O₃(50nm)双层膜的面电阻为373.3Ω,在300nm波长的深紫外透过率为78.97%。     

In_2O_3和ZnO混合薄膜的化学腐蚀特性研究

利用直流磁控溅射在未加热的BK-7玻璃基片上沉积In2O3与ZnO混合(IZO)薄膜,通过原子力显微镜(AFM)、分光光度计和四探针法研究IZO薄膜在HCl溶液中不同腐蚀时间前后的表面形貌以及光电性质的变化。结果表明:随着腐蚀时间的增加,薄膜的表面均方根粗糙度(RMS)和方块电阻(Rs)都呈现先增后减再增的现象;而薄膜的光学透射率则是先减后增再减。由于ZnO比In2O3更容易在HCl溶液中进行腐蚀,使得样品经腐蚀后出现孔洞结构,孔宽与孔深都随着腐蚀时间的增加而增大,这种具有纳米孔洞结构的透明导电薄膜在未来的光电子器件有潜在应用。     

基底温度对ITO薄膜红外发射特性的影响

本文采用射频磁控溅射法制备ITO薄膜,该薄膜具有较低的红外发射率。利用紫外-可见-近红外分光光度计、红外发射率测量仪、四探针测试仪研究了溅射过程中基底温度对ITO薄膜红外特性和光电性能的影响,并且用AFM对ITO薄膜的表面形貌进行了表征。实验发现,随着基底温度的升高,薄膜的表面颗粒增大,透过率、方块电阻、平均红外发射率均会降低。本文还讨论了8μm～14μm波段平均红外发射率与方块电阻之间的关系。     

Highly Conductive and Transparent PEDOT:PSS Films with a Fluorosurfactant for Stretchable and Flexible Transparent Electrodes

Highly conductive and transparent poly‐(3,4‐ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) films, incorporating a fluorosurfactant as an additive, have been prepared for stretchable and transparent electrodes. The fluorosurfactant‐treated PEDOT:PSS films show a 35% improvement in sheet resistance (R_s) compared to untreated films. In addition, the fluorosurfactant renders PEDOT:PSS solutions amenable for deposition on hydrophobic surfaces, including pre‐deposited, annealed films of PEDOT:PSS (enabling the deposition of thick, highly conductive, multilayer films) and stretchable poly(dimethylsiloxane) (PDMS) substrates (enabling stretchable electronics). Four‐layer PEDOT:PSS films have an R_s of 46 Ω per square with 82% transmittance (at 550 nm). These films, deposited on a pre‐strained PDMS substrate and buckled, are shown to be reversibly stretchable, with no change to R_s, during the course of over 5000 cycles of 0 to 10% strain. Using the multilayer PEDOT:PSS films as anodes, indium tin oxide (ITO)‐free organic photovoltaics are prepared and shown to have power conversion efficiencies comparable to that of devices with ITO as the anode. These results show that these highly conductive PEDOT:PSS films can not only be used as transparent electrodes in novel devices (where ITO cannot be used), such as stretchable OPVs, but also have the potential to replace ITO in conventional devices.     

Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures

ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.     

三氧化钼修饰银透明电极的光电性能及其应用研究

银(silver,Ag)纳米薄膜具有优异的导电性、延 展性、易制备等优点,是极具潜力的柔性透明电极材 料。通过真空热蒸镀制备不同厚度的银薄膜(6 nm、10 nm、14 nm、18 nm、20 nm、24 nm),由于光散射和 光吸收的共同作用, 其透过率随厚度的增加呈先减小、再增加、再减小的趋势,厚度为18 nm时最优,最高透过率约60%; 而面电阻则随厚度的增加逐渐减小。为提升银膜的透过率,引入高折射率(2.1)电介质三氧化钼(m olybdenum trioxide,MoO₃)对银膜进行修饰,制备了MoO₃/Ag/MoO₃(MAM)多层膜。结 果表明:引入MoO₃可以平滑 银膜表面,降低面电阻,并改善电导率;更重要的是“MoO₃/Ag”界面处会发生折射率耦合 ,大大提升多 层膜的整体透过率,透过率普遍增加至少10%。当银层的厚度为14 nm时,MAM多层膜的透过率最优, 可接近70%。最后,以银作为透明阴极,成功制备了双侧发光的绿光 有机发光二极管(organic light-emitting diode,OLED)。     

Trilayer Nanomesh Films with Tunable Wettability as Highly Transparent,Flexible, and Recyclable Electrodes

Metallic mesh materials are promising candidates to replace traditional transparent conductive oxides such as indium tin oxide (ITO) that is restricted by the limited indium resource and its brittle nature. The challenge of metal based transparent conductive networks is to achieve high transmittance, low sheet resistance, and small perforation size simultaneously, all of which significantly relate to device performances in optoelectronics. In this work, trilayer dielectric/metal/dielectric (D/M/D) nanomesh electrodes are reported with precisely controlled perforation size, wire width, and uniform hole distribution employing the nanosphere lithography technique. TiO₂/Au/TiO₂ nanomesh films with small hole diameter (≤700 nm) and low thickness (≤50 nm) are shown to yield high transmittance (>90%), low sheet resistance (≤70 Ω sq^?1), as well as outstanding flexural endurance and feasibility for large area patterning. Further, by tuning the surface wettability, these films are applied as easily recyclable flexible electrodes for electrochromic devices. The simple and cost‐effective fabrication of diverse D/M/D nanomesh transparent conductive films with tunable optoelectronic properties paves a way for the design and realization of specialized transparent electrodes in optoelectronics.     

TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure

Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates SnO₂:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8?nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a TiO₂ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, TiO₂ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the SnO₂:F layer was 14?Ω/sq. The deposition of the top TiO₂ layer (45?nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2?Ω/sq. In addition, the sheet resistance of the double-layer FTO/TiO₂ transparent conductive oxide (TCO) electrode increased by 1?Ω/sq as a result of H⁺ plasma exposure. Regardless of the TiO₂ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15?nm thick) due to their high transparency, offering high resistance to aggressive H⁺ plasma conditions. In this paper we show that ～50-nm-thick TiO₂ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure.     

Efficient and ultraviolet durable inverted polymer solar cells using thermal stable GZO-AgTi-GZO multilayers as a transparent electrode

The optical and electrical properties of GZO/AgTi/AZO (GATG) multilayer transparent conducting films fabricated by magnetron sputtering method were investigated. The sheet resistance and maximum optical transmittance of GATG films are 5 Ω/sq and 86%, respectively. The sheet resistance of GATG still retains stable under annealing at 400 °C, which shows better thermal stability compared to GZO/Ag/AZO (GAG) film. The enhanced thermal stability of GATG is attributed to the formation of TiO_X in Ti doped Ag nanostructure film, which can inhibit Ag atom diffusion and aggregation. PTB7-TH:PC₇₁BM based inverted polymer solar cells (PSCs) with GATG electrode gave PCE of 9.20%, which is comparable to PCE (9.23%) of the control PSCs with ITO electrode. The PCE of PSCs with GATG and ITO electrodes respectively remain 59% and 23% of the original PCE values after UV exposure for 20 min with relativize humidity of 68% in air, indicating that PSCs with GATG show better UV durability. Our results suggest that GATG as an alternative to ITO electrode can obtain efficient inverted PSCs and have stronger anti-UV ability due to its low UV transparency.     

A highly conductive and smooth AgNW/PEDOT:PSS film treated by hot-pressing as electrode for organic light emitting diode

A highly conductive, smooth and transparent electrode is developed by coating poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) over silver nanowires (AgNWs) followed by a hot-pressing method. The hot-pressed AgNW/PEDOT:PSS film shows a low sheet resistance of 12 Ω/square, a transmittance of 83% at 550 nm and a smooth surface. The improvement of the conductivity and smoothness are ascribed to the fusion of nanowires resulted from the mechanical hot-pressing. The AgNW/PEDOT:PSS film on polyethylene naphthalate (PEN) substrate exhibits higher conductive stability against the bending test than commonly used indium tin oxide (ITO). Using the hot-pressed AgNW/PEDOT:PSS film as the anode, we have fabricated ITO-free organic light emitting diode with a maximum current efficiency of 58.2 cd/A, which is higher than the device with ITO anode. This proves that such AgNW/PEDOT:PSS film treated by hot-pressing is a promising candidate for flexible optoelectronic devices.     

Large area roll-to-roll sputtering of transparent ITO/Ag/ITO cathodes for flexible inverted organic solar cell modules

We fabricated solution-processed flexible inverted organic solar cell (IOSC) modules (10 cm × 10 cm) on roll-to-roll (RTR) sputtered ITO/Ag/ITO multilayer cathodes. By using a pilot-scale RTR sputtering system equipped with mid-range frequency power for dual ITO targets and direct current power for the Ag target, we were able to continuously deposit a high-quality ITO/Ag/ITO multilayer on PET substrate with a width of 700 mm and length of 20,000 mm as a function of Ag thickness. At the Ag thickness of 12 nm, the ITO/Ag/ITO multilayer had a very low sheet resistance of 3.03 Ohm/square and high transmittance of 88.17%, which are better values than those of amorphous ITO film. A strip-type ITO/Ag/ITO cathode was successfully patterned using a RTR wet etching process. Successful operation of flexible IOSC modules on RTR sputtered ITO/Ag/ITO cathodes indicate that the RTR sputtering technique is a promising coating process for fabrication of high-quality transparent and flexible cathodes and can advance the commercialization of cost-efficient flexible IOSCs.     

A highly conductive PEDOT:PSS film with the dipping treatment by hydroiodic acid as anode for organic light emitting diode

A highly conductive, transparent and uniform poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) film has been developed by dipping treatment with hydriodic acid (HI) solution. The HI-treated PEDOT:PSS film can reach a sheet resistance of 68 Ω per square and a transmittance of 87% at 550 nm. The conductivity enhancement for the HI-treated film is ascribed to the permeation of proton and iodine anion of HI into PEDOT:PSS film, resulting in the separation of PSS and PEDOT chains. The phase separation of PSS and PEDOT can provide more conductive pathways for carriers to improve conductivity of the film. Using the optimized HI-treated PEDOT:PSS film as anode, we have fabricated indium tin oxide (ITO)-free organic light emitting diode (OLED), which shows better performance than the device with ITO as anode. This proves that such PEDOT:PSS film with the dipping treatment by HI solution is a promising alternative to ITO for low cost, transparent and flexible OLED application.