利用偏钨酸铵的DMF/水溶液旋涂热解制备WO3薄膜及其在钙钛矿太阳电池致密层中的应用

本文首次通过旋涂热解偏钨酸铵((NH₄)₆H₂W₁₂O₄₀)的DMF/水溶液成功制备了致密的三氧化钨(WO₃)薄膜, 系统研究了WO₃薄膜厚度及用异丙醇冲洗处理气相辅助溶液法制备的CH₃NH₃PbI₃薄膜对相应钙钛矿太阳电池光伏性能的影响. 结果表明, 使用厚度为62nmWO₃致密层的平板钙钛矿太阳电池获得了短路电流密度17.39 mA.cm_-2, 开路电压0.58 V, 填充因子0.57, 相应光电转化效率5.72%. 使用异丙醇冲洗CH₃NH₃PbI₃薄膜后, 相应太阳电池的光电转化效率由5.72 % 升高到7.04 %.     

基于Bphen:BCP:Cs2CO3作为电子传输层的OLED性能研究

为了进一步平衡OLED器件内部空穴和电子载流子 的注入,制备了结构为ITO/NPB(40nm)/Alq₃(45nm)/Bphen:(X%)BCP:(5%)Cs₂CO₃(15nm)/Cs₂CO₃(1.5 nm)/Al(100nm)的OLED器件,通过改变BCP 的掺杂浓度,研究了以Bphen:BCP:Cs₂CO₃作为电子传输层对OLED器件发光亮度、电流 密度和效率等性能 的影响。结果表明,采用Bphen:BCP:Cs₂CO₃作为电子传输层能提高器件的电子注入能力 ,改善器件的性能, 相比于未引入BCP的器件,采用BCP掺杂浓度为10%的Bphen:BCP:Cs₂CO₃作为电子传输层 ,可以使器件 的最大电流效率提高46%,达到3.89cd/A,且 在电压从为5V上升至10V的过程中,器件的色坐标一直为 (0.35,0.55),具有很高的稳定性。原因是由于BCP的高LUMO能级和高 HOMO能级,能够有 效阻挡空穴到达阴极,减小空穴漏电流,同时使电子的注入更容易,电子和空穴的注入更加 平衡,发光也更加稳定。     

TiO2表面预处理对钙钛矿太阳电池性能的影响

采用一步法制作了基于 n-i-p结构的钙钛矿太阳电池。为了提高钙钛矿活性层以及TiO₂与钙钛矿活性层接触面的质量,用 MAI、MABr和PbI₂溶液对TiO₂层进行预处理,研究了预处理对电池性能的影响。结果显示对TiO₂进行预处理能够改善钙钛矿活性层薄膜的质量并提升钙钛矿太阳电池的性能。通过溶液预处理,太阳电池的能量转换效率和器件稳定性有显著提高,同时滞后效应明显减弱。     

介稳态TiCl4醇水溶液水解制备TiO2致密层及其在无机-有机杂化异质结钙钛矿太阳电池中的应用

致密层作为钙钛矿太阳电池的重要组成部分, 对其制备方法, 工艺及微结构等性质的研究对提高钙钛矿太阳电池的光伏性能具有重要影响. 本文利用介稳态的TiCl₄醇水溶液作为前驱体溶液, 通过旋涂水解制备TiO₂致密层, 并研究了前驱体溶液不同醇水比对致密层微结构及其相应太阳电池光伏性能的影响. 结果表明, 将2 mol.L_-1的TiCl₄的水溶液按醇水体积比3:1的比例用异丙醇稀释后所制备的TiO₂致密层其厚度为126 nm, 且相应的太阳电池取得最高的光电转换效率10.6 %.     

CH3NH3PbI3钙钛矿太阳电池晶粒尺寸及光电性能调控

钙钛矿薄膜的晶粒尺寸对器件性能影响很大。采用湿润性不同的空穴传输层以及不同浓度的CH3NH3I（MAI）溶液,使用热退火和溶剂气氛退火的方法制备出CH3NH3PbI3薄膜及相应电池。测量了不同制备条件的钙钛矿薄膜的X射线衍射、扫描电子显微镜、光致发光谱,以及器件的电流密度-电压曲线。结果表明,溶剂气氛退火可以有效地增大薄膜的晶粒尺寸,提高器件的电流密度;较高浓度的MAI能将PbI2完全转化为CH3NH3PbI3,增大晶粒尺寸;不湿润的功函数更高的空穴传输层有利于电池效率的提高。制备了最高效率为13.3%的CH3NH3PbI3钙钛矿电池,为制备更大晶粒的钙钛矿薄膜与更高效率的钙钛矿太阳电池奠定了基础。     

钙钛矿太阳电池用NiO/石墨烯复合空穴传输材料北大核心

有机-无机杂化钙钛矿太阳电池（PSC）因其效率高、成本低及制备工艺简单等优点而得到广泛的关注。采用无机材料替代有机空穴传输材料可以进一步降低电池成本,拓宽钙钛矿太阳电池空穴传输材料的选择范围。采用水热合成法制备了NiO/石墨烯复合材料前驱体,经过高温处理,得到NiO/石墨烯复合材料,并将其应用于钙钛矿太阳电池空穴传输层。通过X射线衍射仪（XRD）、扫描电子显微镜（SEM）和热重分析仪-差式扫描量热仪（TGA-DSC）等手段表征了复合材料组分及微观结构。同时,探索了复合材料质量浓度和制膜工艺对空穴传输层性能的影响。研究结果表明,当复合材料的氯苯溶液质量浓度为1.25 mg/mL时,采用喷涂工艺制膜得到的空穴传输层具有最优的性能,其相应钙钛矿太阳电池的光电转化效率为1.44%。NiO/石墨烯复合材料在钙钛矿太阳电池中表现出优于NiO和石墨烯的性能,体现了NiO和石墨烯在复合材料空穴输运过程中的协同作用。     

ZnO纳米颗粒表面缺陷对有机太阳能电池性能的影响

用温度控制ZnO纳米 颗粒粒径的大小,研究了颗粒粒径对表面缺陷的影响。由透射电镜(TEM)、紫外-吸收光谱 和荧光光谱测试表明,随着反应温度升高,ZnO纳米颗粒的尺寸增加,比表面积显著下降, 表面缺陷的体密度降低。将不同反应温 度下的ZnO纳米颗粒应用于ITO/ZnO/P3HT:PCBM/MoO₃/Ag结构的有机太阳能电池中,进一 步研究了缺陷对电池性能的影 响。实验结果表明,60℃下ZnO纳米颗粒薄膜作为电子传输层的器件 效果最好,电池效率可以达到3.05%。 这表明在一定范围内,ZnO纳米颗粒越大,缺陷密度越低,越有利于器件中电子的传输从而 提高太阳能电池器件的短路电流密度和光电转化效率。     

基于CdSe/ZnS和Alq3的白光量子点LED的研究

采用CdSe/ZnS红光量子点(QD),利用旋涂和真 空蒸镀工艺制备了结构为ITO/TPD+PVK/QDs/Alq₃/LiF/Al的量 子点发光器件(QD-LED),并对器件的发光性能做了测试。研究了ITO表面处理、TPD空穴 传输层和QD发光层的厚 度对QD-LED性能的影响,并通过调整QD发光层和Alq₃电子传输层的 厚度,制备了可用于照明 的白光QD-LED。实验结果表明,ITO的表面处理可有效降低器件的开启电压,开启 电压从9V降到7V左右; TPD空穴传输层和QD发光层的厚度对器件的电流密度和发光亮度有较大的影响,而Alq₃电 子传输层和QD发光层 的合理配比可以混合出较高色温的白光。通过优化器件各参数,当TPD和PVK质量比为5∶1、QD度为1.0mg/ml和 Alq₃厚为60nm时,制备的器件在15V电压 时发光效率达到了1500c d/m²,色坐标为(0.3628,0.3796) ,显色指数为88.1。     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件.其中NiO、Cu2O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6?5.0 eV范围内电池性能的变化,并分析Al、...     

低温处理的TiO2纳米颗粒薄膜作为缓冲层的有机光伏电池

通过溶胶凝胶法(sol-gel)合成了TiO₂纳米颗 粒(NPs),制备了结构为 ITO/PEDOT:PSS/P3HT:PCBM/TiO₂/Al的有机太阳能电池(OSC)器件。通过优化阴极缓冲 层TiO₂NPs的 热处理温度,考察了温度以及溶剂对TiO₂NPs薄膜的光学性能、形貌结构和电学 性能的影响,并研究了其对OSC性能的影响及作用机理。实验发现,TiO₂NPs处理温度 为80℃时,器件 的效率达到了2.52%。相对于参比器件,器件的光电转换效率(PCE) 、填充因子(FF)分别提高了60%、64.7%。     

Blade-Coated Carbon Electrode Perovskite Solar Cells to Exceed 20% Efficiency Through Protective Buffer Layers

Perovskite solar cells with carbon electrode have a commercial impact because of their facile scalability, low-cost, and stability. In these devices, it remains a challenge to design an efficient hole transport layer (HTL) for robust interfacing with perovskite on one side and carbon on another. Herein, an organic/inorganic double planar HTL is constructed based on polythiophene (P3HT) and nickel oxide (NiOx) nanoparticles to address the named challenge. Through adding an alkyl ammonium bromide (CTAB) modified NiOx nanoparticle layer on P3HT, the planar HTL achieves a cascade type-II energy level alignment at the perovskite/HTL interfaces and a preferential ohmic contact at NiOx/carbon electrode, which greatly benefits in charge collection while suppressing charge transfer recombination. Besides, compared with the single P3HT layer, the planar composite enables a robust interfacial contact by protecting perovskite from being corroded by carbon paste during fabrication. As a result, the blade-coated FA_0.6MA_0.4PbI₃ perovskite solar cells (fabricated in ambient air in fume hood) with carbon electrode deliver an efficiency of 20.14%, the highest value for bladed coated carbon and perovskite solar cells, and withstand 275 h maximum power point tracking in air without encapsulation (95% efficiency retained).     

A low-cost and low-temperature processable zinc oxide-polyethylenimine (ZnO:PEI) nano-composite as cathode buffer layer for organic and perovskite solar cells

Nanocomposite buffer layer based on metal oxide and polymer is merging as a novel buffer layer for organic solar cells, which combines the high charge carrier mobility of metal oxide and good film formation properties of polymer. In this work, a nanocomposite of zinc oxide and a commercialized available polyethylenimine (PEI) was developed and used as the cathode buffer layer (CBL) for the inverted organic solar cells and p-i-n heterojunction perovskite solar cells. The cooperation of PEI in nano ZnO offers a good film forming ability of the composite material, which is an advantage in device fabrication. In addition, power conversion efficiency (PCE) of the ZnO:PEI CBL based device was also improved when compared to that of ZnO-only and PEI-only devices. The highest PCE of P3HT:PC₆₁BM and PTB7-Th:PC₆₁BM devices reached to 3.57% and 8.16%, respectively. More importantly, there is no obvious device performance loss with the increase of the layer thickness of ZnO:PEI CBL to 60 nm in organic solar cells, which is in contrast to the PEI based devices, whose device performance decreases dramatically when the PEI layer thickness is higher than 6 nm. Such a nano composite material is also applicable in inverted heterojunction perovskite solar cells. A PCE of 11.76% was achieved for the perovskite solar cell with a thick ZnO:PEI CBL (150 nm) CBL, which is around 1.71% higher than that of the reference cell without CBL, or with ZnO CBL. In addition, stability of the organic and perovskite solar cells having ZnO:PEI CBL was also found to be improved in comparison with that of PEI based device.     

The dual localized surface plasmonic effects of gold nanodots and gold nanoparticles enhance the performance of bulk heterojunction polymer solar cells

In this study, we investigated the effects of plasmonic resonances induced by gold nanodots (Au NDs), thermally deposited on the active layer, and octahedral gold nanoparticles (Au NPs), incorporated within the hole transport layer, on the performance of bulk heterojunction polymer solar cells (PSCs) based on poly(3-hexyl thiophene) (P3HT) and [6,6]-phenyl-C₆₁butyric acid methyl ester (PC₆₁BM). Thermal deposition of 5.3-nm Au NDs between the active layer and the cathode in a P3HT:PC₆₁BM device resulted in the power conversion efficiency (PCE) of 4.6%—that is 15% greater than that (4.0%) for the P3HT:PC₆₁BM device without Au NDs. The Au NDs provided near-field enhancement through excitation of the localized surface plasmon resonance (LSPR), thereby enhancing the degree of light absorption.     

Double-layered hole transport material of CuInS2/Spiro for highly efficient and stable perovskite solar cells

In this paper, double-layered hole transport material (HTM) was designed and fabricated by adding a thin CuInS₂ film between perovskite and Spiro-OMeTAD (Spiro) layers. The power conversion efficiency (PCE) of the perovskite solar cells (PSCs) with double-layered HTM of CuInS₂/Spiro was improved to 19.63% from 17.97% for the devices with pure Spiro. Moreover, the operational stability of the PSCs with double-layered HTM of CuInS₂/Spiro was enhanced. The PCE of the PSCs with CuInS₂/Spiro retains 91% of the initial value after 30 days storage in ambient atmosphere. The experimental results indicate that the improved performance could be come from the energy band match between CuInS₂ and Spiro, fast hole extraction and transport, and decreased charge recombination in the PSCs with double-layered HTM of CuInS₂/Spiro. This work provides a promising prospect to design a low-cost and high stability HTM for commercial PSCs.     

PbTiO3 as Electron‐Selective Layer for High‐Efficiency Perovskite Solar Cells: Enhanced Electron Extraction via Tunable Ferroelectric Polarization

PbTiO₃ (PTO) is explored as a versatile and tunable electron‐selective layer (ESL) for perovskite solar cells. To demonstrate effectiveness of PTO for electron–hole separation and charge transfer, perovskite solar cells are designed and fabricated in the laboratory with the PTO as the ESL. The cells achieve a power conversion efficiency (PCE) of ≈12.28% upon preliminary optimization. It is found that the PTO ferroelectric layer can not only increase the PCE, but also tune the photocurrent via tuning PTO's ferroelectric polarization. Moreover, to understand the physical mechanism underlying the carrier transport by the ferroelectric polarization, the electronic structure of PTO/CH₃NH₃PbI₃ heterostructure is computed using the first‐principles methods, for which the triplet state is used to simulate charge transfer in the heterostructure. It is shown that the synergistic effect of type II band alignment and the specific ferroelectric polarization direction provide the effective extraction of electrons from the light absorber, while minimize recombination of photogenerated electron–hole pairs. Overall, the ferroelectric PTO is a promising and tunable ESL for optimizing electron transport in the perovskite solar cells. The design offers a different strategy for altering direction of carrier transport in solar cells.     

Isopropanol-treated PEDOT:PSS as electron transport layer in polymer solar cells

Isopropanol (IPA)-treated poly(3,4-ethylenedioxithiophene):poly(styrene sulfonate) (PEDOT:PSS) was applied as a new electron transport layer (ETL) in P3HT:PCBM bulk heterojunction polymer solar cell (BHJ-PSC) devices for the first time, revealing the electron transport property of IPA-treated PEDOT:PSS in sharp contrast to the well known hole transport property of the untreated PEDOT:PSS. Under the optimized condition for incorporating PEDOT:PSS ETL, the power conversion efficiency (PCE) of the ITO/untreated PEDOT:PSS (HTL)/P3HT:PCBM/IPA-treated PEDOT:PSS (ETL)/Al device (3.09%) is quite comparable to that of the reference ITO/untreated PEDOT:PSS (HTL)/P3HT:PCBM/Al device without any ETL (3.06%), and an annealing treatment of PEDOT:PSS ETL at 120 °C for 10 min led to a PCE of 3.25%, which even slightly surpasses that of the reference device, revealing the electron transport property of IPA-treated PEDOT:PSS. The electron transport property of IPA-treated PEDOT:PSS is interpreted by the lowering of the work function of PEDOT:PSS upon IPA treatment and incorporation as ETL as probed by scanning Kelvin probe microscopy (SKPM).     

Graphene-oxide doped PEDOT:PSS as a superior hole transport material for high-efficiency perovskite solar cell

Inverted perovskite solar cells have attracted a great deal of attention due to its high power conversion efficiency, simple configuration, and low-cost processing. The hole transport material (HTM) is a crucial factor in high performance inverted perovskite solar cell. However, the hole mobility for most common of HTM is too low to matching perovskite materials. Herein, we report a superior HTM with high hole mobility to significantly improve solar cell efficiency. Upon doing the commonly used PEDOT:PSS HTM by graphene oxide (GO), its hole mobility is increased from 5.55 × 10⁻⁵ to 1.57 × 10⁻⁴ cm² V⁻¹ s⁻¹, leading to efficient hole extraction and low current leakage, therefore 20% higher power conversion efficiency comparing to the control device without the GO doping. The development open the opportunities for efficient HTMs based on the two-dimensional materials in the perovskite solar cells.     

High efficient ITO free inverted organic solar cells based on ultrathin Ca modified AZO cathode and their light soaking issue

Aluminum doped zinc oxide (AZO) was used to be the cathode instead of indium-tin-oxide (ITO) in the poly (3-hexylthiophene-2,5-diyl):[6,6]-phenyl C₆₁ butyric acid methyl ester (P3HT:PCBM) based bulk heterojunction inverted organic solar cells (IOSCs). For the AZO only IOSC, the device shows a poor power conversion efficiency (PCE) of 1.34% and a light soaking issue related to the energy barrier at the AZO/P3HT:PCBM interface. When a 5 nm Ca modifying layer is inserted between AZO and P3HT:PCBM, the obtained AZO/Ca (5 nm) IOSC shows an increased PCE from 1.74% to 2.69% after 15 min illumination. It is thought that the increased photoconductivity of AZO/Ca (5 nm) film upon illumination and the enhanced electron transport across the AZO/Ca interface may be responsible for the light soaking issue. When an ultrathin Ca modifying layer of 1 nm is employed, a further improved PCE of 3.17% is obtained, and remarkably, no light soaking issue is observed in this case. However, this unexpected issue appears after the un-encapsulated AZO/Ca (1 nm) IOSC has been stored in air for several days, which may be due to the energy loss in the electron transport across the interface between partly oxidized Ca and AZO layers induced by the oxidization of Ca. Furthermore, the AZO/Ca (1 nm) IOSC has a comparable PCE to the referenced ITO/Ca (1 nm) IOSC and presents a better air-stability. It is thus concluded that the AZO cathode is a promising alternative of ITO to fabricate the high efficient and long-lifetime IOSCs.     

High-efficiency inverted polymer solar cells via dual effects of introducing the high boiling point solvent and the high conductive PEDOT:PSS layer

Polymer solar cells (PSCs) are of great interest in the past decade owing to their potentially low-cost in the manufacturing by the solution-based roll to roll method. In this paper, a novel inverted device structure was introduced by inserting a high conductive PEDOT:PSS (hcPEDOT:PSS) layer between the Au nanoparticles (NPs)-embedded hole transport layer (PEDOT:PSS) and the top electrode layer. Power conversion efficiency (PCE) initially reached up to 4.51%, illustrating ∼10% higher compared with the device similarly enhanced by Au NPs plasmonics where only one PEDOT:PSS layer with the embedded Au NPs was used in single bulk heterojunction inverted PSCs based on the poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methylester (P3HT:PCBM). The PCE was further improved from 4.51% to 5.01% by adding the high-boiling point solvent of 1,8-diiodooctane (DD) into the active layer, presenting ∼20% enhancement in PCE through dual effects of introducing the high boiling point solvent and the high conductive PEDOT:PSS layer. Morphologies of the active layers were characterised by SEM and AFM separately in the paper.     

High‐Efficiency Organic Solar Cells Based on Preformed Poly(3‐hexylthiophene) Nanowires

Bulk heterojunction solar cells based on blends of poly(3‐hexylthiophene) (P3HT) and phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) are fabricated using self‐assembled P3HT nanowires in a marginal solvent without post‐treatments. The interconnected network structures of self‐organized P3HT nanowires create continuous percolation pathways through the active layer and contribute to enhanced carrier mobility. The morphology and photovoltaic properties are studied as a function of ageing time of the P3HT precursor solution. Optimal photovoltaic properties are found at 60 h ageing time, which increases both light absorption and charge balance. Multilayered solar cells with a compositionally graded structure are fabriacted using preformed P3HT nanowires by inserting a pure P3HT donor phase onto the hole‐collecting electrode. Applying optimized annealing conditions to the P3HT buffer layer achieves an enhanced hole mobility and a power conversion efficiency of 3.94%. The introduction of a compositionally graded device structure, which contains a P3HT‐only region, reduces charge recombination and electron injection to the indium tin oxide (ITO) electrode and enhances the device properties. These results demonstrate that preformed semiconductor nanowires and compositionally graded structures constitute a promising approach to the control of bulk heterojunction morphology and charge‐carrier mobility.