一种X型宽带复合左右手传输线的设计与分析

为了实现宽带复合左右手传输线,提出并设计了一种反对称X型周期性左右手传输线结构.建立了结构的集总参数等效电路模型,并通过提取等效电路的元件值和S参数仿真,验证了传输线结构的谐振特性.采用参数反演算法对传输线结构的本构参数进行了提取和分析,证实了该结构具有1.6 GHz的带宽,其中在10.08～10.9 GHz呈现左手特性,在9.3～10.08 GHz呈现右手特性,属于宽带左右手传输线结构.最后,应用印刷电路板技术制作了X型复合左右手传输线,并利用平板波导系统对其S参数进行了测试,实验测试结果和仿真结果吻合较好,证明了所设计的左右手传输线结构的有效性.为宽带左右手传输线结构的设计和分析提供了一种手段.     

光探测器芯片小信号等效电路模型的建立

提出了一种光探测器芯片小信号等效电路模型及其建立方法,首先根据光探测器的物理结构确定其等效电路模型,模型考虑了影响光探测器高频性能的主要因素，然后精确测量了光探测器芯片的S参数,通过遗传算法对测量的S参数进行拟合,最终计算出模型的各个参量，在130MHz-20GHz范围内的实验结果表明,模型仿真结果与测量结果相吻合,证明了建模方法的可靠性。该模型有效地模拟了光探测器芯片的高频特性,利用该模型可以对光探测器及相应光电集成器件进行电路级仿真和优化。     

光探测器芯片小信号等效电路模型的建立

提出了一种光探测器芯片小信号等效电路模型及其建立方法.首先根据光探测器的物理结构确定其等效电路模型,模型考虑了影响光探测器高频性能的主要因素.然后精确测量了光探测器芯片的S参数,通过遗传算法对测量的S参数进行拟合,最终计算出模型的各个参量.在130MHz～20GHz范围内的实验结果表明,模型仿真结果与测量结果相吻合,证明了建模方法的可靠性.该模型有效地模拟了光探测器芯片的高频特性,利用该模型可以对光探测器及相应光电集成器件进行电路级仿真和优化.     

信号线跨分割SI数值仿真

以信号线跨分割现象为切入点,探讨高速PCB传输线互连设计方法。先用有限元法仿真计算S参数,然后通过矢量拟合（VF）方法提取等效电路参数,最后分析不同结构参数对高速数字信号完整性（Si）的影响。     

基于CRLH传输线的微带漏波天线的研究与设计

提出了一种基于谐振频率的等效电路参数提取方法,该方法可以精确地描述多节复合左右手传输线结构,并通过仿真软件研究了其物理模型及等效电路模型的一致性,从而验证了这种新的参数提取方法。根据此种新的等效模型设计制作了复合左右手传输线型微带漏波天线,并利用网络分析仪对它的S参数进行了测量。结果表明,所设计的平衡状态下的微带漏波天线波束方向随着频率的变化而变化,并且改变传统漏波天线仅能实现前半空间扫描的局限性,并拓展漏波天线扫描范围至全空间,同时在各个波束方向上的能量也较为均匀,相比于传统漏波天线,尺寸缩小接近50%。     

贺《军医进修学院学报》30年

依据光声传感器的原理,改进了传输线理论,引入与谐振腔相连接的腔室、管道所引起的非理想因素,提出了一种更为完善的LC等效电路模型.利用此模型完成一维光声腔结构参数的理论分析和计算,通过与以前的模拟结果和实际测量数据进行对比可知,新模型的模拟结果与实验结果拟合得更好,从而证明了新模型的合理性.     

PIN光探测器的小信号电路模型参数的提取

提出了一种利用自适应遗传算法提取p-i-n光探测器小信号电路模型参数的方法.文章首先根据p-i-n光探测器的物理结构确定其等效电路模型,进而采用自适应遗传算法对测量的S参数进行拟合,提取模型参数.自适应遗传算法自动优化交叉概率和变异概率,避免了以往遗传算法中易早熟的缺点.利用该法成功提取出模型的10个参数,建立光探测器小信号电路模型.在130 MHz～20 GHz范围内的实验结果表明,模型仿真结果和测量结果相吻合,证明了这种参数提取方法的可靠性.     

毫米波频段宽带CMOS片上巴伦的分析与建模

详细讨论了基于CMOS工艺宽带片上巴伦的实现.首先分析了应当采用的结构及参数化版图.然后给出了一个宽带集总元件等效电路模型,该模型考虑了各种必须考虑的物理效应.通过采用物理公式与优化拟合相结合的方法提取了模型参数,以保证模型在很宽频带范围内具有较高精度.最后,采用台湾半导体制造有限公司(TSMC)提供的0.13μm混合信号/射频CMOS工艺实际制作了两个具有不同几何参数的巴伦,并使用Agilent E8363B矢量网络分析仪测量了S参数.测量结果表明在高达毫米波频段范围内,模型仿真结果与测试结果符合得很好.     

毫米波频段宽带CMOS片上巴伦的分析与建模

详细讨论了基于CMOS工艺宽带片上巴伦的实现.首先分析了应当采用的结构及参数化版图.然后给出了一个宽带集总元件等效电路模型,该模型考虑了各种必须考虑的物理效应.通过采用物理公式与优化拟合相结合的方法提取了模型参数,以保证模型在很宽频带范围内具有较高精度.最后,采用台湾半导体制造有限公司(TSMC)提供的0.13μm混合信号/射频CMOS工艺实际制作了两个具有不同几何参数的巴伦,并使用Agilent E8363B矢量网络分析仪测量了S参数.测量结果表明在高达毫米波频段范围内,模型仿真结果与测试结果符合得很好.     

射频CMOS平面螺旋电感2-π等效电路模型参数的提取

从有理分式拟合方法出发,提出了用于射频CMOS平面螺旋电感2-π等效电路模型参数提取的新方法.通过比较提参后等效电路给出的S参数和实验测量的S参数,证明该方法的精度很高.此外,提参的策略非常直接,因此容易在CAD里面编程实现.提参得到的等效电路模型对于射频电路设计者来说也是非常有用的.     

A new circuit augmentation method for modeling of interconnects and passive components

This paper presents a new methodology for automated broadband model generation from S-parameter data for interconnects and passive components. The new methodology is based on augmenting an existing equivalent circuit model with a macromodel (black-box) network described by rational functions while simultaneously perturbing the equivalent circuit component values. The macromodel network is determined using standard least-squares or vector-fitting approaches. The perturbation of the equivalent circuit parameter values is achieved during the macromodel generation by means of global optimization based on intelligent search algorithms. The new approach is demonstrated on several two-port test example structures including a broadband probe tip structure and a CMOS spiral inductor.     

A new approach for closed-form transient analysis of multiconductor transmission lines

A novel closed-form model for multiconductor transmission lines is presented. The proposed model is derived from the analytical characterization of half-T ladder networks, which using closed-form polynomials (named DFF and DFFz), allow one to exactly extract poles and residues of the two-port representation of multiconductor transmission lines, thus, generating a time domain macromodel that can be incorporated in a circuit simulator. Since the model is derived from a stable and passive equivalent network, its stability and passivity are strictly preserved. Simulation results for one, two, and three-conductor transmission lines with linear and nonlinear terminations are presented, confirming the validity of the proposed model.     

The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design

A method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.     

Stable Parametric Macromodeling Using a Recursive Implementation of the Vector Fitting Algorithm

A novel least-squares fitting technique is presented for the macromodeling of parameterized frequency responses. Such parametric macromodel can be used for the design, study, and optimization of microwave structures. A key benefit of the proposed method, is that the poles of the macromodel are guaranteed stable by construction. This can easily be enforced when using the presented macromodel representation.      

微波功率SiC MESFET小信号等效电路建模研究

在传统GaAs MESFET器件小信号模型基础上提出一种更适合SiC MESFET器件的小信号等效电路模型.该模型在引入了与栅压相关的输入电导后,明显改善了S11的拟合精度.提出直接利用cold FET反向栅压偏置下的S参数,通过曲线拟合和外插技术提取SiC MESFET小信号等效电路寄生参数的方法.该模型应用于国内SiCMESFET工艺线,在O.5～18GHz范围内S参数的仿真值和实测值非常吻合.     

A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional /spl pi/-model. Good match with the measured S-parameters, L(/spl omega/), Re(Z/sub in/(/spl omega/)), and Q(/spl omega/) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.     

多层弯曲磁微执行器的宏模型

首先介绍了多层弯曲磁微执行器的基本工作原理。根据磁路定律和等效磁荷方法 ,提出了考虑边缘漏磁效应的执行器工作的宏模型。计算结果与 ANSYS模拟和已有的实验结果进行了比较。该宏模型可以在设计执行器时应用     

基于积分方程等效电路和BLT方程的传导耦合效应仿真分析

提出了基于积分方程等效电路和Baum-Liu-Tesche(BLT)方程的电磁脉冲传导耦合效应分析方法, 建立外部电磁干扰等效源模型, 提取等效电流和阻抗参数.对内部含复杂传输线网络和集成电路插件的电子设备建立了电磁拓扑模型, 采用BLT方程分析电磁脉冲响应.仿真分析了内部传输线连接关系、外部信号线长度和半径大小、节点负载等因素对传导耦合效应的影响.将计算结果和商用电磁仿真软件CST的结果进行了对比, 分析了所提方法的有效性, 可为电子设备电磁脉冲防护设计提供参考.     

An investigation of the power characteristics and saturationmechanisms in HEMTs and MESFETs

A method for large-signal transistor analysis is presented. The method is based on the harmonic-balance approach but makes use of input data from measured S-parameters instead of DC or pulsed DC characteristics and a large-signal equivalent circuit with harmonic elements. The topology of this circuit is nearly identical to commonly used small-signal equivalent circuits; its application allows a detailed interpretation of the computed results, which are very precise due to the use of small-signal S-parameters. The large-signal model is applied to HEMTs and MESFETs. Their saturation mechanisms are investigated and the operational difference is discussed. The importance of including higher harmonic signal components in the large-signal analysis is also shown