全固态复合内腔和频613nm连续波橙光激光器

报道了全固态连续波613nm橙光激光器,橙激光是分别由Nd:YAG和Nd:YVO4晶体的1444nm和1064nm谱线非线性和频产生的,两条谱线在各自晶体对应能级跃迁分别为4F3/2-4I13/2和4F3/2-4I11/2.实验中采用复合腔结构,利用KTP晶体Ⅱ类临界相位进行内腔和频,当注入到Nd:YAG和Nd:YVO4晶体的泵浦功率分别为20W和10W时,获得344mW的TEM00连续波613nm橙激光输出.4h功率稳定度优于±2.8%.     

全固态复合内腔和频554.9nm连续波黄-绿光激光器

报道了全固态连续波554.9 nm黄-绿光激光器,黄-绿激光是分别由Nd∶YAG和Nd∶YVO4晶体的1342 nm和946 nm谱线非线性和频产生,两条谱线在各自晶体对应能级跃迁分别为4F3/2-4I11/2和4F3/2-4I9/2。实验中采用复合腔结构,利用KTP晶体II类临界相位进行内腔和频,当注入到Nd∶YAG和Nd∶YVO4晶体的泵浦功率分别为20 W和10 W时,获得1.1 W的TEM00连续波554.9 nm黄-绿激光输出。4h功率稳定度优于±2.8％。     

复合腔和频554.8 nm黄-绿光激光器

介绍了一种光纤耦合激光二极管阵列(LDA)同时泵浦Nd:YAG和Nd:YVO4晶体输出554.8nm连续波的全固态黄-绿光激光器。黄-绿激光是由Nd:YAG晶体的946nm激光和Nd:YVO4晶体的1342nm激光非线性和频产生,两条谱线在各自晶体的对应能级跃迁分别为4F3/2-4I9/2和4F3/2-4I13/2。实验中采用复合腔结构,利用KTP晶体II类临界相位匹配进行腔内和频,当注入到Nd:YAG和Nd:YVO4晶体的泵浦功率分别为30W和20W时,获得了1.13W的连续波554.8nm黄-绿激光输出,光束质量因子M2<1.22,这是目前为止该波长已见报道的最高功率输出值。实验结果表明:采用Nd∶YAG和Nd∶YVO4两种激光晶体进行腔内和频是获得黄-绿激光的高效方法,并可以应用到其他两种激光晶体进行腔内非线性和频,获得更多不同波长的激光输出。     

850mW全固态腔内和频554．9nm连续黄光激光器

报道了全固态连续波554．9nm黄光激光器,黄激光是分别由Nd：YAG和Nd：YVO4晶体的1342nm和946nm谱线非线性和频产生,两条谱线在各自晶体对应能级跃迁分别为^4F3/2-^4I11／2和^4F3／2-^4I9/2。实验中采用复合折叠腔结构,利用LBO晶体I类临界相位进行内腔和频,当注入到Nd：YAG和Nd：YVO4晶体的泵浦功率分别为20W和8W时,获得850mW的TEMoo连续波554．9nm黄激光输出。4小时功率稳定度优于±2．5%.     

激光二极管阵列抽运Nd:YAG腔内双波长运转589 nm和频激光器

报道了一种光纤耦合激光二极管阵列(LDA)抽运Nd:YAG晶体、腔内Ⅰ类临界相位匹配LBO和频、连续波输出的全固态589 nm激光器的设计和实验结果.黄激光是由Nd:YAG晶体的1064 nm和1319 nm谱线腔内和频产生的,其对应能级跃迁分别为4F3/2→4I11/2和4F3/2→4I13/2.实验采用三镜折叠腔结构,在808 nm的15 W抽运功率下,获得了最高功率为860 mW连续波TEM00的589 nm黄激光输出,光-光转换效率为5.7%,激光输出功率噪声低,光束质量因子M2＜1.2,4 h功率稳定度优于±3.4%.实验结果表明采用三镜折叠腔进行腔内和频是获得589 nm黄激光的有效方法,并可以应用到Nd:YAG晶体的其他谱线或具有多条谱线的其他激光增益介质,获得更多不同波长激光输出.     

LDA抽运Nd:YAG/LBO单通道腔内和频589nm激光器

报道了一种光纤耦合激光二极管阵列(LDA)抽运Nd:YAG晶体、腔内I类临界相位匹配LBO和频、连续波输出的全固态589nm激光器的设计和实验结果。黄光激光是由Nd:YAG 晶体的1064nm和1319nm谱线腔内和频产生,其对应能级跃迁分别为4F3/2到4I11/2和4F3／2 到4I13/2。实验采用三镜腔结构,在808nm 12W的抽运功率下,获得了最高功率为384mW连续波TEM00的589nm黄光激光输出,光束质量因子M2<1．2,4h功率不稳定度小于±2％。实验结果表明采用三镜腔进行腔内和频是获得589nm黄光激光的有效方法,并可以应用到 Nd:YAG晶体的其它谱线或具有多条谱线的其它激光增益介质,获得更多不同波长激光输出。     

LBO I类临界相位匹配腔内和频572 nm黄光激光器

首次报道了全固态连续波572 nm黄光激光器,黄激光是分别由两片Nd: YAG的1444 nm和946 nm谱线非线性和频产生,两条谱线在各自晶体对应能级跃迁分别为~4F_(3/2)-~4I_(15/2)和~4F_(3/2)-~4I_(9/2).实验中采用复合腔结构,利用LBO晶体I类临界相位进行内腔和频,当注入到两片Nd: YAG晶体的泵浦功率分别为24 W和14.8 W时,获得592 mW的TEM_(00)连续波572 nm黄激光输出.4 h功率稳定度优于±3.6%.     

激光二极管阵列抽运Nd∶YAG腔内双波长运转589nm和频激光器

报道了一种光纤耦合激光二极管阵列(LDA)抽运Nd∶YAG晶体、腔内Ⅰ类临界相位匹配LBO和频、连续波输出的全固态589 nm激光器的设计和实验结果。黄激光是由Nd∶YAG晶体的1064 nm和1319 nm谱线腔内和频产生的,其对应能级跃迁分别为4F3/2→4I11/2和4F3/2→4I13/2。实验采用三镜折叠腔结构,在808 nm的15 W抽运功率下,获得了最高功率为860 mW连续波TEM00的589 nm黄激光输出,光-光转换效率为5.7%,激光输出功率噪声低,光束质量因子M2<1.2,4 h功率稳定度优于±3.4%。实验结果表明采用三镜折叠腔进行腔内和频是获得589 nm黄激光的有效方法,并可以应用到Nd∶YAG晶体的其他谱线或具有多条谱线的其他激光增益介质,获得更多不同波长激光输出。     

激光二极管抽运复合腔和频连续波589 nm激光器

报道了一种利用复合腔进行腔内和频的589nm激光器.激光器由两个子谐振腔组成.在两个子谐振腔中,分别利用两个激光二极管(LD)抽运Nd∶YAG晶体和Nd∶YVO4晶体,并分别选择1319 nm波长(对应Nd∶YAG晶体的4F3/2→4I13/2跃迁)与1064 nm波长(对应Nd∶YVO4晶体的4F3/2→4I11/2跃迁)振荡进行和频.通过谐振腔的优化设计,实现了腔内两个波长较好的模式与增益匹配.在两个子腔的交叠部分,利用BiB3O6(BIBO)晶体Ⅰ类临界相位匹配进行腔内和频,得到和频激光输出.当Nd∶YAG与Nd∶YVO4晶体上抽运功率分别为750 mW和600 mW时,获得了24 mW,589 nm黄橙激光输出.该输出激光光束质量好、噪声低.     

LD泵浦Nd:YVO4全固态RTP Ⅱ类匹配543 nm激光器

报道了LD泵浦Nd:YVO4晶体连续输出的全固态腔内倍频543 nm激光器.采用三镜折叠腔结构,用功率为20 W的LD抽运掺杂浓度为0.2%的Nd:YVO4晶体,产生1 085 nm腔内振荡基频波,其谱线在Nd:YVO4晶体内的对应能级跃迁为4F3/2-4I11/2.采用长度为10mm的Ⅱ类临界相位匹配RTP晶体进行腔内倍频,获得了543 nm激光输出.在20 W的抽运功率下,最大输出功率为2.13 W,光束质量因子M2=1.22,光一光转换效率达到了10.65%,输出功率在30 min内稳定度优于3%.实验结果表明:采用Nd:YVO4激光晶体进行腔内倍频是获得该543 nm波长激光的高效方法.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.