Electric and dielectric properties of solution-gas interface-grown PbS films

Dielectric properties andI–V characteristics of solution-gas interface-formed PbS thin-film capacitors (Al/PbS/Al) of various thicknesses have been studied in the frequency range 10-10⁶ Hz at various temperatures (300–443 K). Current-voltage (I–V) characteristics show space-charge-limited conduction. Dielectric constant (ε) increases with increasing film thickness and temperature and decreases with increase of frequency. The loss factor (tanδ) peaks observed in tanδ vs frequency and tanδ vs temperature reveal relaxation effect from dipolar orientation. These maxima shift to higher-temperature region with increasing frequency. The large increase in capacitance (C) and dielectric constant (ε) towards low-frequency (f) region indicates the possibility of an interfacial polarization mechanism in this region.     

High-speed preparation and dielectric properties of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript> film by laser chemical vapor deposition

BaTi₄O₉ film was prepared on Pt/Ti/SiO₂/Si substrate by laser chemical vapor deposition. The microstructure and dielectric properties were investigated. The single-phase BaTi₄O₉ film with random orientation was obtained. The surface consisted of round and rectangular grains, and the cross-section was columnar microstructure. The deposition rate (R _dep) was 135 μm h⁻¹. The dielectric constant (ε _r) and loss (tanδ) were 35 and 0.01, respectively, at 1 MHz. With increasing temperature, ε _r increased and showed a broad peak around 736 K, which indicated there might be a phase transition.     

Effect of Ca/Si ratio on the microstructures and properties of CaO–B2O3–SiO2 glass-ceramics

CaO–B₂O₃–SiO₂ glass-ceramics were synthesized by sol–gel method, and the effect of Ca/Si ratio on the microstructures, electrical properties and mechanical characteristics of this ternary system was investigated. The results showed that the increase of CaO content is favorable for the crystallization of CaO–B₂O₃–SiO₂ system and formation of the desired glass-ceramics. The bending strength of the sintered glass-ceramics increases with CaO content by increasing of crystalline phases. When the Ca/Si ratio increases, the dielectric constant (ε _r) decreases and loss (tanδ) increases gradually. The thermal expansion coefficient (TEC) enhances by increasing CaO contents due to the formation of other crystal phases with large TEC value. The glass-ceramics exhibit low dielectric constant and loss (ε _r < 4.7, tanδ < 5 × 10^-4 at 1 MHz), high resistivity (ρ > 10¹² Ω · cm), as well as excellent mechanical properties (σ ≈ 160 MPa, α ≈ 3.6 × 10⁻⁶/°C).     

Dielectric and impedance spectroscopy studies on sisal fibre-reinforced polyester composite

Frequency and temperature dependence of dielectric constant (ε_r), dielectric loss (tanδ), ac conductivity (σ_ac) and complex impedance spectroscopy studies on cured polyester matrix and sisal fibre-reinforced polyester composites (SFRPC) have been investigated in the frequency range from 180 Hz to 1 MHz and temperature range from room temperature to 200 °C. The experimental results showed that with the incorporation of sisal fibre, the values of ε_r, tanδ and σ_ac are increased. It is also found that the values of ε_r and tanδ for both cured polyester matrix and SFRPC are decreased with increasing frequency, which indicates that the major contribution to the polarization may come from orientation polarization and interfacial polarization. The increasing value of ε_r with increasing temperature at a particular frequency is due to free motion of the dipole molecular chains within the cured polyester matrix and SFRPC at higher temperature.     

Electrical properties of thermally evaporated tellurium thin films

Results of dielectric and conduction properties of vacuum evaporated tellurium (Te) thin film capacitors (Al-Te-Al) have been reported in the frequency range 1–100 kHz at various temperatures (303–423 K). Loss factor (tanδ) which shows a maximum with frequency increases with rise of temperature and tanδ _max shift towards high frequency region. The large values of capacitance and dielectric constant (ɛ′) in the low frequency region indicate the possibility of an interfacial polarization mechanism.I-V characteristics show ohmic, space charge limited (SCLC) and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Various transport parameters have been calculated. It has been observed that the Schottky type of conduction is predominant in the high field region and the Schottky barrier height has been determined. The Hall coefficient, Hall mobility and carrier concentration are also discussed.     

Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Effect of Mn substitutions on dielectric properties of high dielectric constant BaTiO<Subscript>3</Subscript>-based ceramic

The effects of Mn added during processing on the dielectric properties and microstructure of the BaTiO₃-based ceramic materials system were discussed. Experiments show that a proper content of Mn can significantly increase dielectric constant (ε) and reduce the dielectric loss (tanδ) in BaTiO₃-based X7R ceramic materials. The results attribute to the reaction: . When the system doped with 0.046mol% MnCO₃ was sintered at 1240 °C for 4 h, the ε, tanδ and TCC were 5800, 1.6%, 0 ± 10% at 1 KHz respectively.     

Synthesis,growth, optical,mechanical and electrical properties of <Emphasis Type="Italic">L</Emphasis>-lysine <Emphasis Type="Italic">L</Emphasis>-lysinium dichloride nitrate (<Emphasis Type="Italic">L</Emphasis>-LLDN) single crystal

Semi-organic nonlinear optical material, L-lysine L-lysinium dichloride nitrate (2C₆H₁₅N₂O₂⁺_{2}^{+} · H⁺ · NO₃^-_{3}^{-} · 2Cl⁻) was synthesized at room temperature. Single crystals of L-LLDN were grown by slow cooling solution growth technique. The grown crystal was confirmed by powder X-ray diffraction analysis. The crystalline perfection of the grown single crystal was characterized by high-resolution X-ray diffraction (HRXRD) studies. The cut-off wavelength was determined by UV-vis transmission spectral analysis. The frequency doubling of the grown crystal was confirmed by powder second harmonic generation (SHG) measurement. The refractive index and birefringence of the crystal were determined using He–Ne laser source. Mechanical property of the crystal was determined by Vickers hardness tester. The frequency and temperature dependence of dielectric constant (ε _r), dielectric loss (tan δ) and a.c. conductivity (σ _ac) were also measured.     

Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method

Bi_4-xNd_xTi₃O₁₂ (BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2P _r) of 26.6 μC/cm², dielectric constant (ε _r) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10⁻⁶ A/cm² (at ± 5 V) and fatigue-free characteristics.     

Frequency-dependent dielectric and electric modulus properties of Li–Ni–Sm–Fe–O spinel embedded in conducting polymer

Conducting polymeric nanocomposite containing Li–Ni–Sm–Fe–O spinel was synthesized by the chemical oxidizing of aniline in the presence of LiNi_0.5Sm_0.08Fe_1.92O₄ particles. The dielectric and electric modulus properties of the as-prepared samples were investigated over a frequency range from 10⁶ to 10⁹ Hz. The dielectric constant (ε′), dielectric loss (ε″) and dissipation factor (tan δ) for all samples presented relatively high values at low frequency and were found to decrease with the frequency. The values of ε′, ε″ and tan δ of the nanocomposite were lower than that of the pristine PANI. Electric modulus analysis had been carried out to understand the electrical relaxation process. The dielectric relaxation time for the nanocomposite became longer due to the introduction of LiNi_0.5Sm_0.08Fe_1.92O₄ particles lowering the crystallinity of PANI.     

Dielectric properties of SrTiO3 single crystals subjected to high electric fields and later irradiated with X-rays orγ-rays

The dielectric constant (K), loss (tanδ), and hence conductivity (σ) of SrTiO₃ single crystals have been measured in the frequency region 10²–10⁷ Hz and in the temperature range 30°–350° C. Quenching, subjecting the crystals to high electric fields (a.c. or d.c.) and X-ray orγ-ray irradiation, or a combination of these treatments, is found to bring about interesting changes in these properties. An attempt is made to understand the results.     

Study of dielectric properties of nanophase silver iodide

Dielectric properties of nanophase AgI are studied over the frequency range from 100 kHz to 3 MHz at different temperatures. The values ofε, tanδ andσ _ac are considerably larger than those reported for crystalline pellets of AgI, but they show a similar trend in variation with frequency and temperature. The increase in these values are attributed to the defect structure of the nano-particles.     

Properties of neodymium-doped Ca<Subscript>0.15</Subscript>Sr<Subscript>1.85</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>18</Subscript> ferroelectric ceramics

Bismuth-layered compound Ca_0.15Sr_1.85Bi_4−xNd_xTi₅O₁₈ (CSBNT, x = 0–0.25) ferroelectric ceramics samples were prepared by solid-state reaction method. The effects of Nd³⁺ doping on their ferroelectric and dielectric properties were investigated. The remnant polarization Pr of CSBNT ceramics increases at beginning then decreases with increasing of Nd³⁺ doping level, and a maximum Pr value of 9.6 μC/cm² at x = 0.05 was detected with a coercive field Ec = 80.2 kV/cm. Nd³⁺ dopant not only decreases the Curie temperature linearly, but also the dielectric constant (ε_r) and dielectric loss tangent (tan δ). The magnitudes of ε_r and tan δ at the frequency of 100 kHz are estimated to be 164 and 0.0083 at room temperature, respectively.     

Ferroelectric phase transition in Ba5RTi3Nb7O30 [R=Nd, Eu, Gd] ceramics

Polycrystalline samples of Ba₅RTi₃Nb₇O₃₀ [R=Nd, Eu, Gd], were prepared using high-temperature solid-state reaction technique. Preliminary X-ray structural analysis of the compounds shows the formation of single phase compounds (orthorhombic crystal system) at room temperature. Detailed studies of dielectric properties (ɛ, tanδ,σ) as a function of frequency (400 Hz to 10 kHz) and temperature (30° to 380°C) show that these compounds exhibit diffuse ferroelectric phase transition.     

Compound-LiCo<Subscript>3/5</Subscript>Fe<Subscript>1/5</Subscript>Mn<Subscript>1/5</Subscript>VO<Subscript>4</Subscript> and dielectric characteristics

The LiCo_3/5Fe_1/5Mn_1/5VO₄ compound was successfully synthesized by solution-based chemical method. The variation of dielectric constant (ε_r) with frequency at different temperatures shows a dispersive behavior at low frequencies. Temperature dependence of ε_r at different frequencies indicates dielectric anomalies in ε_r at temperature (T_max) = 220, 235, 245, 260 and 275 °C with (ε_r)_max ~ 6,830, 2,312, 1,224, 649 and 305 for 10, 50, 100, 200 and 500 kHz, respectively. The variation of tangent loss with frequency at different temperatures shows the presence of dielectric relaxation in the material. The variation of relaxation time as a function of temperature follows the Vogel-Fulcher relation.     

AC-field Frequency Response of?Cu0.5Tl0.5Ba2(Ca2?qMgq)Cu3O10?δ Bulk Superconductor

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ (q=0, 0.5, 1.0 1.5) superconductor samples were studied at two temperatures of 80 and 290 K by capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 KHz to 10 MHz. We have presented the measurements of the dielectric constants (ε′ and ε″), dielectric loss factor (tan δ) and ac-conductivity (σ _ac) as a function of frequency and temperature. A negative capacitance (NC) experience has been observed, which is most likely due to different contact electrodes and superconductor samples’ Fermi levels. Since metals have their Fermi levels higher than ceramics, there is a flow of the carriers from the ceramic samples towards the metal electrodes. The dielectric polarization phenomenon is observed, which is due to dislodgment of mobile charges from their equilibrium position relative to fixed charges of the reservoir layer. The improved inter plane coupling promoted by Mg substitution at Ca site would change the dielectric response of Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ superconductors. To observe such effects in Mg doped Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ superconductors, di- electric measurements were carried out both at room temperature (290 K) and in the superconducting state closer to the boiling point of liquid nitrogen (80 K). The excess conductivity arising due to superconducting state of material has been determined, and its role in the mechanism of superconductivity is suggested. The negative dielectric constant (ε′) and dielectric loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 80 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

Dielectric characteristic and local phase transition of gallium phosphide nanosolid

The dependences of relative dielectric permittivity, ε′ _r, and tangent of dielectric loss angle, tg δ, of gallium phosphide (GaP) nanosolid on frequency and temperature were investigated. The GaP nanopowders are subglobular in shape, with the average crystallite size of about 50 nm evaluated from Scherrer equation. It can be concluded that the leakage current mechanism plays an important role in the dielectric loss of the GaP nanosolid. The dielectric characteristic of the GaP nanosolid in the range 298–350 K allows to detect an ε′ _r or tg δ peak at 303 K that is due to local phase transitions, probably in the high hydrostatic stress field of dislocations with an edge component. Under the influence of an electric field, the high hydrostatic stress field of dislocations can undergo changes in deformation, accompanied by drastic stress-induced changes in the order parameter near the phase transition temperature, and hence, changes in the Gibbs free energy per unit volume can be found.     

Dielectric properties of Be(IO<Subscript>3</Subscript>)<Subscript>2</Subscript>⋅4H<Subscript>2</Subscript>O crystals

The article studies the dielectric properties, dc conductivity and ac conductivity of Be(IO₃)₂⋅4H₂O single crystals. The dielectric constant ε has been defined for the three directions of the vectors a, b and c in the crystals in the temperature interval 280–340 K and frequency range 100 Hz–10⁶ Hz. The crystals show strongly expressed anisotropy, at 20 ^∘C and frequency 100 Hz ε_a = 235, ε_b = 30 and ε_c = 85. The frequency dependence of ε is evidence of the presence of low-frequency relaxation polarization in the crystals. The activation energies of the three directions in the crystals have been derived from the temperature dependence of dc conductivity, and they are 1.03 eV, 0.836 eV and 1.2 eV respectively.     

Dielectric behaviour of erbium substituted Mn-Zn ferrites

Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent (tan□δ) of mixed Mn-Zn-Er ferrites having the compositional formula Mn_0.58Zn_0.37Fe_2.05−xEr_x0₄ (where itx = 0.2, 0.4, 0.6, 0.8 and 1.0) were measured at room temperature in the frequency range 1–13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant (ε′) vs frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ) was found to be abnormal, giving a peak at certain frequency for all mixed Mn-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plots of dielectric constant vs temperature have shown a transition near the Curie temperature for all the samples of Mn-Zn-Er ferrites. However, Mn_0.58Zn_0.37Er_1.0Fe_1.05O₄ does not show a transition. On the basis of these results an explanation for the dielectric mechanism in Mn-Zn-Er ferrites is suggested.     

Role and behaviour of orthotitanate Ba2TiO4 during the processing of BaTiO3 based ferroelectric ceramics

Some anomalies observed in the dielectric properties of ceramics made from calcines of BaTiO₃ are due to the presence of Ba₂TiO₄. These effects are only negligible if the Ba₂TiO₄ concentration in the calcine is less than 1 or 2 wt %. For concentrations greater than this, Ba₂TiO₄ inhibits the growth of BaTiO₃ grains, shifts the Curie point towards low temperatures, decreasesε _r and causes large fluctuations in tanδ curves.