共查询到19条相似文献,搜索用时 218 毫秒
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对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究.从理论和实验两个方面,对不同宽度比的腐蚀特性进行了比较.结果表明,宽度比对窄-宽组合结构和宽-窄组合结构的影响不同.对于窄-宽组合结构,腐蚀过程不仅与宽度比有关,而且与沟道宽度有关.对于宽度比相同的结构,每个阶段的腐蚀速率和腐蚀前端浓度非常接近,每个阶段的腐蚀时间却随沟道宽度的增加而增长.但是,如果宽沟道的长度比较长,总的腐蚀时间非常接近.对于宽-窄组合沟道结构,如果宽度比相同,则包括所需腐蚀时间在内的所有过程完全相同.每个阶段结束时的腐蚀速率和腐蚀前端的浓度随着宽度比的增大而增大,但是总的腐蚀时间随宽度比的增大而下降. 相似文献
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对不同结构,即直沟道结构、冒泡结构和组合沟道结构的氢氟酸牺牲层腐蚀进行了研究.以往的牺牲层腐蚀模型和实验结果不能很好地吻合.以往的模型和实验结果的误差随着腐蚀时间的增加而增大.本文提出了一个修正模型,在修正模型中:HF的扩散系数是浓度和温度的函数;腐蚀速率常数是温度的函数;此外还考虑了腐蚀产物对腐蚀过程的影响.对于组合沟道结构,对腐蚀前端形状的描述采用了一个新的数学模型.实验结果和以往的模型以及修正模型进行了对比,结果表明修正模型能够和实验结果吻合得很好. 相似文献
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我们已经观察了窄沟NMOS晶体管的增强辐射灵敏度。辐射导致的阈值漂移随沟道宽度在4μm以下减少而迅速增加。例如,同是4.5μm沟道长度,0.8μm宽FET器件的辐射灵敏度是5μm宽器件的两倍。这种几何图形依赖性可由2维电势计算来定量解释。这些计算表明,辐射以后边缘场对阀值电压的影响减弱,这对窄沟器件来说就导致较大的阀值移动。 相似文献
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The performance of a successive-cancellation multiuser detector (SC-MUD) for narrow-band signals operating in the Rayleigh-fading channel is shown to deteriorate severely unless very large power margins at the receiver are maintained. To mitigate this deterioration, antenna diversity is applied and adapted to the SC-MUD. In each detection stage, the best signal for detection and the corresponding combining weights are determined jointly. Two criteria for selecting the best signal based on maximizing the signal-to-noise-plus-interference ratio and maximizing the minimum distance-to-noise ratio, respectively, are proposed and evaluated. For signal combining, zero forcing and minimum mean square error (mmse) combining are considered. The obtained results show that the SC-MUD with mmse combining performs close to maximum likelihood joint detection while keeping a much lower computational complexity when the number of users is less than the number of receive antennas. The effect of channel-estimation errors is investigated for orthogonal training sequences and shown to result in a minor degradation compared to perfect estimation. 相似文献
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以HBr作为刻蚀气体,采用ICP金属刻蚀系统对气体流量、刻蚀压力、离子源功率、偏压功率等工艺参数与刻蚀速率、刻蚀选择比和侧壁垂直度的对应关系进行了大量工艺实验。借助理论分析和工艺条件的优化,开发出一套可满足制备侧壁垂直度的纳米尺度多晶硅密排线结构的优化刻蚀工艺技术。实验结果表明:当采用900 W的离子源功率、11 W的偏压功率、25 cm3/min流量的HBr气体和3 mTorr(1 mTorr=0.133 3 Pa)刻蚀压力的工艺条件时,多晶硅与二氧化硅的刻蚀选择比大于100∶1;在保持离子源功率、偏压功率、气体流量不变的条件下,单纯提高反应腔工艺压力则会大幅提高上述选择比值,同时损失多晶硅和二氧化硅的刻蚀均匀性;HBr气体流量的变化在上述功率及反应腔工艺压力的工艺范围内,对多晶硅与二氧化硅的刻蚀选择比和多晶硅刻蚀的形貌特征均无显著影响。采用上述优化的刻蚀工艺条件,配合纳米电子束光刻技术成功得到多晶硅纳米尺度微结构,其最小线宽为40 nm。 相似文献
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The etching damage on nano-clustering silica (NCS) film due to etching radicals was investigated using a method of radical treatments in RIE plasma. NCS coated-side of the wafer was turned downward and put at 0.65 mm above the wafer stage to investigate only the influence of radicals. Etching radicals, which comes from CF4, diffuse into NCS film and reduce Si-CH3 bonds and Si-CH3 loss is proportional to the amount of diffused fluorine in NCS film. Several Si-CH3 bonds are converted to Si-F bonds then. As a result, the low-k performance is degraded and especially the leakage current heavily increases. We proposed a method for estimating the degree of the sidewall damage due to etching radicals using blanket wafers. The degree of sidewall damage is proportional to the value of CR−0.5, where C is the damage diffusion coefficient, which is derived from Si-CH3 decrement ratio from a radical treatment result and R is the etching rate, which is derived from a RIE treatment result under the same plasma condition. The value of CR−0.5 depends on the etching condition and must be decreased as much as possible in order to reduce the sidewall damage during RIE. For example, lower gas pressure, higher RF power, and higher CF4/Ar gas flow ratio were desirable for the sidewall damage reduction. 相似文献
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CAO Xue-hong Department of Information Engineering Nanjing University of Posts Telecommunications Nanjing P.R. China 《中国邮电高校学报(英文版)》2005,12(2)
1Introduction Orthogonal Frequency Division Multiplexing(OFDM) has become a popular technique for transmis-sion of signals over wireless channels . OFDMhas beenadoptedinseveral wireless standards such as Digital Au-dio Broadcasting ( DAB) , Digital Video Broadcasting(DVB-T) ,the IEEE 802 .11a[1]Local Area Network(LAN) standard and high performance LAN type 2(HIPERLAN/2)[2]standard. OFDMis also being pur-sued for Dedicated Short-Range Communications(DSRC) for road side to … 相似文献
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开口面积比是微通道板(MCP)重要的性能指标,在MCP输入面进行扩口,对于MCP的探测效率、噪声因子等参数有显著的提升作用,在微光夜视仪、粒子探测器等军用、民用领域具有巨大的应用潜力。采用湿法腐蚀进行微通道板扩口,面临工艺一致性差、选择性腐蚀造成锥度尺寸难以达标等难题,实质性批量应用非常困难。针对扩口MCP难以制作和应用的问题,提出一种采用干法刻蚀进行MCP扩口的方法,阐述了干法刻蚀进行MCP扩口原理及可行性。通过建立理论模型研究干法刻蚀工艺参数如刻蚀角度、刻蚀时间等对于MCP开口面积比、通道内刻蚀深度、通道内壁刻蚀锥度等性能参数的影响,计算出合适的工艺参数范围,为开展实验研究奠定了基础。 相似文献
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大尺度衰落环境不仅具有较长的信道延时特征,而且具有明显大于LTE调制带宽的系统交换延迟。当基于相邻小区基站进行虚拟天线联合处理,并对多个接收簇进行组播协作通信时,必须考虑两类延时带来的延时误差。此时,每个接收簇由多个单天线接收节点构成,簇内节点接收相同的信息流,不同簇间信息流不同。文中研究了发射天线之间存在交换同步延迟的情况下的信道估计性能,评估了系统整体性能,并在此基础上提出了一种波束成型的优化设计方案。仿真及部分算法分析表明,新算法可通过对每个接收节点的信号与干扰加噪声比(SINR)进行优化来提升整体系统性能,可在实际大尺度LTE工作环境下获得更好的系统性能。 相似文献
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Vertically integrated high-silica channel waveguides on Si 总被引:2,自引:0,他引:2
For the first time the vertical integration of high-silica content low-loss channel waveguide on an Si substrate is reported. The fabrication process, which has made the vertical integration feasible, consists of a practical multistep combination of flame hydrolysis deposition (FHD), photolithographic patterning and reactive ion etching. The successful application to a double integration of singlemode waveguides at 1.55 mu m is also reported. This result, which has been possible thanks to the FHD peculiarities, by extending the optical interaction to a third dimension, opens a wide range of original and promising applications, such as vertically coupled devices or parallel optical signal processors, and it effectively increases the density of optical guided-wave functions available on the same substrate.<> 相似文献
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以InP/InGaAsP脊形波导结构为研究对象,采用有限元算法(FEM),系统地仿真分析了在固定芯层厚度的情况下,不同脊高和脊宽条件下脊形波导的单模特性和偏振特性.在芯层厚度一定的情况下,脊宽越窄,刻蚀深度越浅,波导的传输模式越接近单模.在深刻蚀情况下,脊波导模双折射系数受到脊宽的影响较大,波导的偏振不敏感性较差;在浅刻蚀情况下,模双折射系数(△n=nTE-nTM)受到脊宽和脊高的影响较为微弱,稳定在1.2×10-3.相关仿真和分析为基于InP/InGaAsP脊波导的光电子器件的结构设计提供了一定的理论支持. 相似文献