关于X射线在晶体中衍射的理论研究

对X射线衍射强度公式进行了修正,使其理论计算的结果得到了明显的改善。对简单立方晶体银和铁的衍射相对强度进行计算,并与标准PDF卡片相比较发现:对银和铁而言,未修正公式计算的结果:Ag的偏差范围为84%～165%,Fe的偏差范围为66%～90%。修正后的公式计算的结果则与实验数据符合得比较好,Ag的偏差范围为24%～42%,Fe的误差范围为2%～5%。     

聚乙烯膜对样品残余应力测试的影响

采用X2001应力分析仪测试了α-Fe和铍样品表面分别覆盖聚乙烯膜前后的残余应力,探讨了残余应力测试值变化的原因及其规律。样品表面覆盖聚乙烯膜后,由于校准距离D的增大,使得衍射峰向低角度方向偏移,从而引起应力实测值发生了改变。通过对应力实测值进行修正,可获得样品内的真实应力。     

As通过SiO_2在硅中反冲氧的计算及其对剩余缺陷的影响

通过SiO_2而将As、P和B注入到硅中去的方法通常是制备MOS电路和双极电路的重要掺杂手段。这种方法的优点在于可防止离子对硅单晶表面的溅射、污染和减少辐射损伤。 关于反冲理论和离子通过薄膜的反冲的研究已发表了一些文章。但是针对集成电路离子掺杂的要求,来确定氧反冲量最大和最小的条件,特别是反冲氧对剩余损伤的影响等问题还需要深入的研究。     

高温退火过程中As压对SI—GaAs化学配比的影响

通过同步X光荧光（SXRF）成分分析，定性地研究了在0．5atm、0.6atm、0.7atm As压下1150℃进行退火处理后衬底化学与比的变化。结果表明：控制As压可以改变化学配比，在足够As压下的高温退火将改善化学配比均匀性。     

杂质对X射线在炸药中衰减规律影响的研究

对某炸药（纯炸药和含金属片的炸药）进行了X射线检测,并对穿透率进行拟合,通过对拟合结果分析得出了在管电压和管电流一定的条件下X射线在某炸药中随药柱的增加其衰减规律符合三次拟合。同时得到杂质的密度越大,衰减越明显,不同厚度的同一杂质,厚度大的衰减明显。     

TiO2晶体和TiO2—SiO2复合变体对铀的吸附及其辐照稳定性

用Ｘ射线粉末衍射分析（ＸＲＤ）及红外光谱（ＩＲ）方法研究了ＴｉＯ２晶体中非晶态ＳｉＯ２的存在导致形成新的变体的过程；同时研究了ＴｉＯ２、ＳｉＯ２水合氧化物及其复合变体的辐照稳定性。结果表明，非晶态ＳｉＯ２的存在有助于由锐钛矿和金红石共同组成的ＴｉＯ２复合晶体转变为单一的锐钛矿。ＴｉＯ２、ＳｉＯ２及其复合变体良好的辐照稳定性为其用于核废料的处理提供了有利的条件。     

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar ions

The sputtering of bismuth thin films induced by 20-160 keV Ar⁺ ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and φ = 1.5 × 10¹⁶ cm⁻², leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar⁺ ion fluence for a fixed ion energy exhibit a significant depression at very low φ-values followed by a steady state regime above ∼2.0 × 10¹⁴ cm⁻². Measured sputtering yields versus Ar⁺ ion energy with fixing ion fluence to 1.2 × 10¹⁶ cm⁻² in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.     

带有AlN插入层的GaN薄膜的结构及应变研究

利用金属有机化学汽相沉积（MOCVD）法在硅衬底上生长具有AlN插入层的GaN外延膜，采用高分辨X射线衍射（HRXRD）和卢瑟福背散射/沟道（RBS/Channeling）技术研究分析其结构和应变性质。从RBS<0001>沟道谱可知，该外延膜具有良好的结晶品质，χ_min=2.5%。利用不同方位角上XRD摇摆曲线测量，可得出GaN（0001）面与Si（111）面之间的夹角β=1.379°。通过对GaN（0002）和GaN（1015）衍射面的θ-2θ扫描，可以得出GaN外延膜在垂直方向和水平方向的平均弹性应变分别为-0.10%±0.02%和0.69%±0.09%。通过对{1010}面内非对称<1213>轴RBS角扫描可得出由弹性应变引起的四方畸变e_T在近表面处为0.35%±0.02%。外延膜弹性性质表明GaN膜在水平方向具有张应力(e∥>0)、在垂直方向具有压应力(e^⊥<0)，印证了XRD的结果。四方畸变是深度敏感的，通过对不同深度的四方畸变计算可知，AlN插入层下面的GaN外延膜弹性应变释放速度比AlN层上面的GaN层弹性应变释放快，说明AlN层的插入缓解了应变释放速度。     

Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar ions

The sputtering and surface state evolution of Bi/Si targets under oblique incidence of 120 keV Ar⁺ ions have been investigated over the range of incidence angles 0° ? θ_i ? 60°. Increasing erosion of irradiated samples (whose surface thickness reduced by ∼3% at normal incidence up to ∼8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using Rutherford backscattering (RBS), atomic force (AFM) and X-ray diffraction (XRD) techniques. Measured sputtering yield data versus θ_i with fixed ion fluence to ∼1.5 × 10¹⁵ cm⁻² are well described by Yamamura et al. semi-empirical formula and Monte Carlo (MC) simulation using the SRIM-2008 computer code. The observed increase in sputter yield versus incidence angle is closely correlated to Bi surface topography and crystalline structure changes under ion irradiation.     

The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) were characterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction (HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventional furnace annealing and rapid thermal annealing with temperature between 750℃ and 910℃. Both strain and its relaxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported in other literatures. The rapid thermal annealing at elevated temperature between 880℃ and 910℃ for very short time had almost no influence on the strain in Si0.84Ge0.16 epilayer. However, high temperature (900℃@) furnace annealing for 1h prompted the strain in Si0.84Ge0.16 layer to relax.     

Influence of N2 flow rate on structure and properties of TiBCN films prepared by multi-cathodic arc ion plating and studied with ion beam scattering spectroscopy

TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp~here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp~ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp~ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp~2C–C and sp~3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.     

Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature

The damage produced by implantation of Er ions of 400 keV at a fluence of 5 × 10¹⁵ ions/cm² in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He²⁺ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after annealing in oxygen and nitrogen atmospheres successively at 1000 °C, and only a small portion of the Er atoms segregated to the silicon surface. Most of the Er atoms diffused to deeper depths because of the affinity of Er for oxygen.     

硫对注入YSZ单晶的金属铂在退火过程中结晶的影响

秀卢瑟福背散射－沟道技术（ＲＢＳ－Ｃ）和Ｘ射线衍射技术（ＸＲＤ）研究了Ｐｔ和注入ＹＳＺ（Ｙ２Ｏ３稳定的ＺｒＯ２）后产生的损伤和退火过程中损伤的恢复及注入Ｐｔ的晶化，ＲＢＳ－Ｃ分析表明ＹＳＺ室温下的存在较强自退火效应，ＸＲＤ分析结果示出硫以铂的晶化产生很大影响。     

BSRF-1W2A光束线弯晶单色器的改进

为解决北京同步辐射装置(BSRF)小角散射实验站样品处光斑的水平聚焦效果差、光斑展宽及光斑水平位置随流强变化有一定的移动等问题,本文设计了一种能够满足实验站稳定用光的新的弯晶单色器.     

X射线衍射法研究刚玉注入层的结构

用Ｘ射线衍射法和ＰＯＷＤ１２理论计算程序探讨了多晶刚玉Ｆｅ离子注入层的结构变化。     

Role of Ion Beam Irradiation and Annealing Effect on the Deposition of AlON Nanolayers by Using Plasma Focus Device

AlON nanolayers are synthesized on Al substrate by the irradiation of energetic nitrogen ions using plasma focusing. Samples are exposed to multiple （5, 10, 15, 20 and 25） focus shots. Ion energy and ion number density range from 80 keV to 1.4 MeV and 5.6×10^19 m^- 3 to 1.3×10^19 m ^-3, respectively. Moreover, the effect of continuous annealing （473 K and 523 K） on an AlN surface layer synthesized with 25 focus shots is also examined. The main features of the X-ray diffraction （XRD） patterns with increasing focus shots are： （i） variation in the crystallinity of AlN along （111）, （200） and （311） planes, （ii） increasing average crystallite size of AlN （111） plane, and （iii） stress relaxation observed in AlN （111） and （200） planes. The crystallinity of AlN surface layer is comparatively better at 473 K annealing temperature. A broadened diffraction peak related to an aluminium oxide phase showing weak crystallinity is observed for 15 focus shots while non-bounded oxides are present in all other deposited layers. Raman and Fourier transform infrared spectroscopy （FTIR） analysis confirm the presence of AlN and Al203 for the surface layer annealed at 473 K temperature. Raman analysis shows that the overlapping of AlN and Al2Oa results in the development of residual stresses. Scanning electron microscope （SEM） results demonstrate that the formation of rounded grains （range from 20 nm to 200 nm） and variations in their microstructures features depend on the increasing number of focus shots. Decomposition of larger clusters into smaller ones is observed.