热压与放电等离子体烧结两种工艺制备Al2O3/Cu复合材料

由机械合金化法(MA)制得纳米级Al₂O₃颗粒弥散镶嵌于微米级Cu颗粒表面的复合粉末, 利用球形化工艺改善所制得复合粉的形貌及粒度范围, 分别采用热压法(HP)和放电等离子体烧结(SPS)法制备Al₂O₃/Cu复合材料。通过测试密度、 电导率、 抗弯强度及SEM复合粉形貌和烧结体断口分析、 微区成分分析, 对比研究了Al₂O₃质量分数分别为0%、 0.5%、 1.0%、 1.5%时Al₂O₃/Cu复合材料的物理、 力学和电学性能。结果表明: 不同制备工艺下随着Al₂O₃含量增加, 材料的抗弯强度先增后降, 电导率除受杂质影响外, 还受材料缺陷的影响, 故变化规律不明显, 对于Al₂O₃含量相同的Al₂O₃/Cu复合材料, 采用SPS法制备的复合材料的致密度、 抗弯强度及电导率均高于HP法; 在弯曲应力下两种制备方法所得复合材料均发生延性断裂。      

Al2O3基多孔隔热材料表面Al2O3/MoSi2涂层的制备及其性能

采用刷涂法在Al₂O₃基多孔隔热材料表面制备Al₂O₃/MoSi₂涂层,涂层以硅溶胶作为粘结剂,纳米Al₂O₃与Al₂O₃纤维作为耐高温组分,MoSi₂为高发射率组分。通过SEM、XRD对Al₂O₃/MoSi₂涂层微观表面结构、物相组成进行分析。研究纳米Al₂O₃与Al₂O₃纤维的质量比和MoSi₂含量对Al₂O₃/MoSi₂涂层耐温性能的影响,并对Al₂O₃/MoSi₂涂层的抗热震性能、发射率进行表征。结果表明,当纳米Al₂O₃与Al₂O₃纤维的质量比小于1∶1时,热考核后Al₂O₃/MoSi₂涂层表面无裂纹产生;当纳米Al₂O₃与Al₂O₃纤维的质量比在1∶2~1∶4之间时,Al₂O₃/MoSi₂涂层中的纤维网络较完整。MoSi₂的含量为20%时,Al₂O₃/MoSi₂涂层抗热震实验循环25次后表面保持完好,热考核后在2.5~25 μm波段的平均发射率在0.85左右,具有较高的发射率。      

稀土对Al-Zn-M g-Cu/Al2O3陶瓷界面润湿性的影响

采用真空座滴法和熔铸法研究了在Al-Zn-Mg-Cu 合金中加入稀土(Ce、Y) 对Al2Zn2M g2Cu/Al₂O₃陶瓷界面润湿性的影响。结果表明,Al-Zn-Mg-Cu 合金中加入稀土可有效降低铝合金/Al₂O₃界面的接触角, 改善界面结合状态; 稀土改善界面润湿性存在一最佳含量范围, 添加Ce 的最佳含量约为0. 5w t% , Y 约为0. 7w t%。稀土改善润湿性的作用主要是稀土与Al₂O₃膜、Al₂O₃陶瓷发生反应。Mg、Zn、Cu 等合金元素在界面富集并参与界面反应对润湿性有利; 稀土与Mg、Zn、Cu 等合金元素适当组合改善润湿性的效果比单一稀土明显。      

Al2O3纤维对SiO2基陶瓷型芯的烧缩阻滞

向SiO₂基体粉料中添加Al₂O₃纤维,采用热压注法制备Al₂O₃/SiO₂陶瓷型芯。分析Al₂O₃纤维含量对陶瓷型芯性能的影响。研究结果表明：Al₂O₃纤维含量对Al₂O₃/SiO₂陶瓷型芯的线收缩率、体积密度和抗弯强度均有较大的影响。当Al₂O₃纤维含量大于1wt%时,Al₂O₃/SiO₂陶瓷型芯的线收缩率大幅度降低,稳定在0.335%左右,体积密度随之降低,稳定在1.790 g · cm^-3左右;当Al₂O₃纤维含量为1wt%时,陶瓷型芯抗弯强度达最大值20.48 MPa。分析了Al₂O₃纤维对Al₂O₃/SiO₂陶瓷型芯烧结收缩的阻滞作用机制。     

多孔Al2O3f/Al2O3复合材料研究进展

作为20世纪90年代兴起的一类连续陶瓷纤维增强陶瓷基复合材料,连续氧化铝纤维增韧氧化铝(Al₂O_3f/Al₂O₃)复合材料已经发展为与C_f/SiC、SiC_f/SiC等非氧化物复合材料并列的陶瓷基复合材料。以多孔基体实现基体裂纹偏转成为Al₂O_3f/Al₂O₃复合材料主要的增韧设计方法,形成的多孔Al₂O_3f/Al₂O₃复合材料具有优异的抗氧化性能和高温力学性能,可在高温富氧、富含水汽的中等载荷工况中长时服役,是未来重要的热结构材料。经过近30年的发展,多孔Al₂O_3f/Al₂O₃复合材料已被应用于航空发动机、燃气轮机等热端部件。本文综述了多孔Al₂O_3f...     

Al2O3颗粒形貌对注凝成型ZrO2/Al2O3陶瓷性能的影响

采用3种不同形貌的Al₂O₃原料对注凝成型制备ZrO₂/Al₂O₃（ZTA）陶瓷工艺中悬浮体的流变性能进行了研究。以低毒的单体N,N-二甲基丙烯酰胺（DMAA）制备了ZrO₂/Al₂O₃坯体和陶瓷。讨论了3种不同形貌的Al₂O₃原浆料的分散剂用量、球磨时间和固含量对浆料流变性的影响。Al₂O₃粉体呈扁平状有利于降低浆料的黏度,Al₂O₃粉体呈棒状对生坯强度的提高有利。制得的3种ZrO₂/Al₂O₃坯体颗粒间结合紧密,抗弯强度分别达到21.45,19.87,25.90 MPa。Al₂O₃粉体呈颗粒状有利于最终陶瓷力学性能的提高,陶瓷的抗弯强度及断裂韧性分别为680 MPa和7.49 MPa·m^1/2,453.1 MPa和6.8 MPa·m^1/2,549.4 MPa和6.34 MPa·m^1/2。     

超细Al2O3颗粒增强铜基复合材料的研究

采用热压烧结法制备了超细Al₂O_3P/Cu 复合材料, 并进行了轧制, 对其组织与性能进行观察与分析。结果表明, 超细Al₂O_3P在基体中分布均匀, 细化了晶粒, 具有优于铜及铜合金的抗软化性能和耐磨性能。随着超细Al₂O_3P含量的提高, 密度、电导率降低, 硬度、强度升高, 轧制后的电导率与美国SCM 制品接近。      

Al2O3掺杂BaTi0.85Sn0.15O3陶瓷的制备及性能表征

通过传统固相二次烧结法来制备x wt% Al₂O₃（x=0、1.0、1.5）/BaTi_0.85Sn_0.15O₃（BTS）陶瓷。研究了掺杂不同含量Al₂O₃对BTS陶瓷的微观结构、介电性能及挠曲电性能的影响。结果表明,掺杂Al₂O₃的BTS陶瓷不改变陶瓷的晶体结构,仍为标准钙钛矿结构晶型;Al₂O₃的掺入能够有效降低晶粒尺寸,具有明显的细晶作用。随着Al₂O₃含量的增大,Al₂O₃/BTS陶瓷的介电常数减小,介电损耗得到明显改善,居里峰逐渐宽化且向温度高的方向偏移。Al₂O₃/BTS陶瓷的挠曲电系数随着Al₂O₃含量的增加和测试环境温度的升高均减小。此外,Al₂O₃/BTS陶瓷的挠曲电系数和介电常数之间存在一种近线性关系,但当温度非常接近于居里温度时,这种线性关系减弱。     

低毒单体DMAA用于ZrO2/Al2O3坯体注凝成型

采用低毒的单体N, N-二甲基丙烯酰胺(DMAA)制备了氧化锆增韧氧化铝(ZrO₂/Al₂O₃)坯体。讨论了分散剂的用量、 ZrO₂/Al₂O₃浆料的pH值、 粉体中ZrO₂含量、 粉体所占浆料的固相体积分数、 球磨时间、 预混液中DMAA的浓度(质量分数)对ZrO₂/Al₂O₃浆料黏度的影响。并研究了注凝成型ZrO₂/Al₂O₃坯体的性能和显微结构。结果表明, 当浆料pH值为9, 分散剂的添加量为ZrO₂/Al₂O₃粉体质量的0.6%, 球磨时间为6 h, ZrO₂/Al₂O₃浆料具有最小的黏度。固相体积分数的提高和DMAA加入量的增大都会提高ZrO₂/Al₂O₃浆料的黏度, ZrO₂的加入会降低浆料的黏度。用DMAA制备得到的ZrO₂/Al₂O₃坯体结构均匀, 抗弯强度达到25 MPa。      

Bi2O3助熔剂对CaO-B2O3-SiO2/Al2O3玻璃陶瓷复合材料性能的影响

以CaO-B₂O₃-SiO₂(CBS)玻璃粉体和Al₂O₃陶瓷粉体为原料,通过在CBS与Al₂O₃的质量比固定为50:50的玻璃-陶瓷复合材料中添加适量的Bi₂O₃作为烧结助熔剂,探讨了Bi₂O₃助熔剂对CBS/Al₂O₃复合材料的烧结性能、介电性能、抗弯强度和热膨胀系数的影响规律.研究表明:Bi₂O₃助熔剂能通过降低CBS玻璃的转变温度和黏度促进CBS/Al₂O₃复合材料的致密化进程,于880 ℃下烧结即能获得结构较致密、气孔较少的CBS/Al₂O₃复合材料.然而,过量添加Bi₂O₃将使玻璃的黏度过低,从而恶化CBS/Al₂O₃复合材料的烧结性能、介电性能及抗弯强度.当Bi₂O₃的添加量为CBS/Al₂O₃复合材料的1.5wt%时,于880 ℃下烧结即能获得最为致密的CBS/Al₂O₃复合材料,密度为2.82 g·cm^-3,这一材料具有良好的介电性能(介电常数为7.21,介电损耗为1.06×10^-3),抗弯强度为190.34 MPa,0~300 ℃的热膨胀系数为3.52×10^-6 K^-1.     

Microstructure and optical absorption property of the Cu/SiO2 nano-films

Cu/SiO₂ nano-composite thin films were prepared by a sol–gel method. The structure and optical property of the films were investigated with a special emphasis on the influences of Cu content. Cu particles were basically spherical and dispersed in the SiO₂ matrix. The optical absorption peaks due to the surface plasmon resonance of Cu particles were observed in the wavelength range of 550–600 nm. The absorption property is enhanced with increasing Cu content, showing a maximum value in the films with 30 at.% Cu. Increasing Cu content above 30 at.% results in a decrease in absorption intensity. The absorption peak shows a red-shift trend with increasing Cu content from 5 to 30 at.% and then turns to blue-shift by further increasing the Cu content from 30 to 35 at.%. The band gap Eg decreases with increasing Cu content from 10 to 30 at.% but increases by further increasing Cu content.     

磁控溅射制备Cu2O和Cu2O/TiO2复合膜及其光催化活性

采用直流反应磁控溅射的方法在普通玻璃上沉积得到Cu2O、TiO2和Cu2O/TiO2复合薄膜.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线能谱仪(EDS)对薄膜的晶体结构、表面形态和薄膜元素组成进行了分析.XRD结果表明,当反应溅射时间为5 min时,Cu2O薄膜由单一的(111)晶面组成;反应时间的延长促进了Cu2O(110)和(220)晶面的生长.通过计算得出Cu2O(111)更有利于对O2的吸附.进一步使用氙灯作为光源,用薄膜对亚甲基蓝(MB)的降解率来表征光催化活性.结果表明,Cu2O/TiO2复合薄膜的光催化效果随着Cu2O含量的增加升高而后降低,当Cu2O含量为2.6mol%时,光催化活性最高.光催化效率的提高主要归因于Cu2O的加入引起光生电子-空穴的分离,而过量的Cu2O会延长光生电子迁移到Cu2O/TiO2界面和空穴迁移至表面所需要的时间,使电子和空穴复合的几率增大,从而降低了量子效率.     

Cu ion in-diffusion in congruent LiNbO3 single crystals

Congruent LiNbO₃ (LN) crystals were grown by Czochralski technique. Thermal in-diffusion of transition metal ion Cu²⁺ into crystal wafers was performed at various temperatures. The absorption peaks in transmission spectra indicates the Cu²⁺ ion diffusion in LN crystal wafer. A broad absorption band centered at 948 nm was observed in the absorption spectra due to the vibronic transition associated with Cu²⁺ centers. The significant red shift in absorption edges indicates the decrease in Li/Nb ratio in Cu in-diffused crystal wafers. Powder XRD of pure and Cu in-diffused LN samples show no structural change during thermal diffusion.     

Cu/WO3-TiO2光催化剂的结构与吸光性能研究

用溶胶-凝胶法制得复合半导体WO3-TiO2,用浸渍法制得Cu/WO3-TiO2光催化剂.利用XRD、Raman、TPR、IR、TEM、XPS和UV-Vis等技术研究了Cu/WO3-TiO2的物相结构、微粒尺寸和吸光性能.结果表明含量为10wt%的WO3单分子层分散在TiO2表面,粉体平均粒径15nm.WO3的引入使TiO2吸收限发生明显蓝移,WO3负载量超过单分子层分散(＞10wt%),有晶相WO3生成,光吸收性能下降.W-O-Ti键的形成加强了半导体之间的相互作用,有利于光生载流子在半导体间的输送.负载金属Cu促进四面体配位W向八面体配位W转化.     

Na2S2O3浓度对共电沉积制备Cu2ZnSnS4薄膜性能的影响

采用电化学沉积的方法在SnO2透明导电玻璃基底上沉积Cu2ZnSnS4(CZTS)薄膜,在氮气保护下对其进行进一步硫化,研究了溶液中不同Na2S2O3浓度对沉积薄膜性质的影响。运用X射线衍射、扫描电镜、紫外-可见光分光光度计和拉曼光谱等手段分别对薄膜进行表征。实验结果表明:随着浓度的增加,薄膜的结构和光学特性逐渐变好。当Na2S2O3的浓度为0.11 mol/L时,制得理想的具有类黝锡矿结构的CZTS薄膜,光学带隙1.51 eV。     

水热法制备Cu掺杂可见光催化剂BiVO4及其光催化性能研究

以Bi(NO3)3.5H2O、NH4VO3、Cu(NO3)2.3H2O为原料,采用水热法合成了Cu-BiVO4光催化剂,并利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)、紫外漫反射(UV-Vis)等测试手段对催化剂进行了表征.结果表明,提高前驱液pH值,可得到单斜晶系白钨矿型Cu-BiVO4光催化剂,BiVO4的晶型结构并未随着Cu掺入量的增加而改变.光催化剂中的Cu元素以CuO和Cu2O的形式存在.Cu的引入使可见光吸收带发生红移,吸收强度明显提高.可见光催化降解亚甲基蓝溶液的结果表明,Cu掺杂有利于提高BiVO4的活性.其中pH值为5.0、Cu掺入量为1.0wt%的BiVO4具有最好的光催化效果,可见光照射60 min后,对初始浓度为10 mg/L的亚甲基蓝溶液的最高降解率由纯BiVO4的57.4%提高到97.8%.并对Cu掺入后光催化活性提高的机理进行了分析.     

Synthesis and characterization of novel nanostructured fishbone-like Cu(OH)2 and CuO from Cu4SO4(OH)6

The Cu₄SO₄(OH)₆ was synthesized by a simple hydrothermal reaction with a yield of ~ 90%. Using Cu₄SO₄(OH)₆ as the starting material, novel fishbone-like Cu(OH)₂ was produced by a direct reaction of Cu₄SO₄(OH)₆ with NaOH solution. The Cu(OH)₂ consists of many needle-like nanorods parallel to each other and perpendicular to the direction of backbone, forming fishbone-like structure. Using the fishbone-like Cu(OH)₂ as the sacrificial precursor, CuO with similar size and morphology was obtained through a simple heat treatment. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray, X-ray photoelectron spectroscopy, BET nitrogen adsorption, and UV-Vis absorption spectroscopy were employed to characterize the as-prepared samples. The conversion of the Cu₄SO₄(OH)₆ to the fishbone-like Cu(OH)₂ was visualized by time-dependent SEM images. A mechanism was also proposed based on the observed results.     

Facile preparation and enhanced photocatalytic H2-production activity of Cu(OH)2 nanospheres modified porous g-C3N4

A facile precipitation approach for the preparation of Cu(OH)₂/g-C₃N₄ composite photocatalysts with good porous structure was developed for the first time. The as-synthesized samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible light (UV–vis) absorbance spectra, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). A photocatalytic water splitting reaction on the as-prepared photocatalysts were carried out under visible light irradiation. The results revealed that the prepared samples showed significantly enhanced photocatalytic activity. The optimal Cu(OH)₂ loading content was found to be 0.34 mol%, giving an H₂-production rate of 48.7 μmol h⁻¹ g⁻¹, which is higher 16.5 times than that of pure g-C₃N₄. This high photocatalytic H₂-production activity is attributed to the presence of Cu(OH)₂ clusters on the surface of the porous g-C₃N₄, which efficiently promotes the visible light absorption and separation of photogenerated electron–hole pairs.     

静电纺丝法制备的Co0.6Ni0.3Cu0.1Fe2O4和Co0.6Ni0.3Zn0.1Fe2O4纳米纤维的结构及磁性能

采用静电纺丝技术制备出表面光滑、直径均匀的Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4/PVP和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4/PVP纳米纤维前驱丝,经500~900℃煅烧后得到Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维。用TG-DSC、XRD、SEM及VSM现代测试分析手段对Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的结构、形貌及磁学性能进行测试表征。结果表明:在空气气氛中经500~900℃煅烧后可得到纯尖晶石相、结晶度良好的纳米纤维或短纤维;当温度为700℃时,Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4和Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的形貌细长而光滑且直径相对均匀,大约为80nm;此时Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维则保有较高的剩磁比(M_r/M_s)及矫顽力,分别为0.56和1 088.87Oe。在500℃、600℃、700℃、800℃、900℃煅烧后,Co_(0.6)Ni_(0.3)Zn_(0.1)Fe_2O_4纳米纤维的饱和磁化强度分别比Co_(0.6)Ni_(0.3)Cu_(0.1)Fe_2O_4纳米纤维增大了14.5%、7%、16%、10.7%、8%,而矫顽力则分别降低了38%、51%、50%、46%、46.7%。两种纳米纤维的饱和磁化强度及矫顽力存在差异,为CoNi铁氧体在电磁方面的应用提供了很好的参考。     

Growth of Cu2SnS3 thin films by solid reaction under sulphur atmosphere

Cu₂SnS₃ thin film have been synthesized by solid state reaction under vapour sulphur pressure at 530 °C, during 6 h, via a sequentially deposited copper and tin layers Cu/Sn/Cu…Sn/Cu/Sn. The structure and the composition were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Electron Probe Micro Analysis (EPMA). X-ray diffraction revealed that as the deposited film crystallizes in the cubic structure and the crystallites exhibit preferential 111 orientation of the grains. Moreover, EPMA analysis confirmed that the obtained film is stoichiometric. The SEM study shows the presence of spherical particles of ≈100-120 nm diameters. The optical absorption coefficient and band gap of the film were estimated by means of transmission and reflection optical measurements at room temperature. A relatively high absorption coefficient in the range of 10⁴ cm⁻¹ was indeed obtained and the band gap value is of the order of 1.1 eV. On the other hand, the electrical conductivity of Cu₂SnS₃ film prepared in the present experiment is suitable for fabricating a thin film solar cell based on not cheaper and environmental friendly material.