The influence of expertise on X-ray image processing.

Observers with four different levels of radiological experience performed a recognition memory task on slides of faces and chest X-ray films. Half of the X-ray films revealed clinically significant abnormalities and half did not. Recognition memory for faces was uniformly high across all levels of radiological experience. Memory for abnormal X-ray films increased with radiological experience and, for the most experienced radiologists, was equivalent to memory for faces. Suprisingly, recognition memory for normal films actually decreased with radiological experience from above chance to a chance level. These results indicate that radiological expertise is associated with selective processing of clinically relevant abnormalities in X-ray images. Expert radiologists appear to process X-ray images the way that we all process faces, by quickly detecting and devoting processing resources to features that distinguish one stimulus from another. However, the selective processing of X-ray films appears to be restricted to clinically relevant abnormalities. As they develop the ability to detect these abnormalities, radiologists appear to lose the ability to detect variations in normal features. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

基底温度对反应磁控溅射氮化铝薄膜的影响

采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响.结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响.AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势.随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加.弹性模量随温度的变化趋势与硬度的基本一致.在可见光区域AlN薄膜透过率超过90％,基本属于透明膜.基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降.     

粉末冶金Ti-Al合金表面多孔氧化膜的制备

以含CrO3的氢氟酸水溶液为电解液,采用阳极氧化法于粉末冶金Ti-Al合金表面制备多孔氧化膜。采用场发射扫描电镜(SEM)、X射线衍射仪(XRD)和X射线光电子能谱仪(XPS)对多孔氧化膜的形貌和结构进行分析,研究电解液各组份及浓度、阳极氧化电压对多孔氧化膜的影响规律,并利用电化学测试技术探讨多孔氧化膜的成膜机理。结果表明:合金在不含CrO3的HF电解液中阳极氧化不能获得多孔氧化膜,而是发生严重的腐蚀溶解。电解液中HF浓度和电压均影响氧化膜的形貌,在HF含量为0.2%时可获得规则的多孔氧化膜,孔径在50nm左右;当氧化电压为10V时形成的多孔氧化膜规则性较好,电压增大时多孔氧化膜结构遭到破坏。氧化膜中主要含有无定型的TiO2、Al2O3以及少量晶态的Ti2O、单质Al。多孔氧化膜的生长过程包括阻挡层的形成、多孔氧化膜的初始形成和多孔氧化膜的稳定生长3个阶段。     

Effects of oxygen pressure on La_3Ga_5SiO_(14) thin films grown by pulsed laser deposition

La3Ga5SiO14 thin films were grown on Si(100) substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300) and(220) planes increased as the oxygen pressure was increased to 20 Pa.The deposited films ...     

Photocatalytic degradation of Rhodamine B under visible light with Nd-doped titanium dioxide films

Microporous titanium dioxide films were prepared by the sol-gel methods on glass substrates, using tetrabutyl titanate as source material. In order to absorb the visible light and increase the photocatalytic activities, different concentrations of neodymium ions (Nd/Ti molar ratio was 0.5%, 0.7%, 0.9%, and 1.1% respectively) were added into the sol. X-ray diffraction (XRD), X-ray photoelectron spectros-copy (XPS), and atom force microscopy (AFM) were applied to characterize the modified films. A kind of typical textile industry pollutant (Rhodamine B) was used to evaluate the photocatalytic activities of the films under visible light. The results showed that the activities of the films were improved by doping Nd ions into the sol.     

Structure and Properties of TiO2-CeO2 Films Deposited on Soda-Lime Silicate Glass Substrates by R.F.Magnetron Sputtering

TiO2-CeO2 films were deposited on soda-lime glass substrates at different ratio of O2 to Ar (0.10, 0.15,0.20) by R. F. magnetron sputtering. The structure, surface composition, UV-visible spectrum of the films were measured by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and spectrometer. The results show that the films are amorphous, and the relative molar ratio of Ce to Ti is higher than that of the target at lower ratio of O2 to Ar. Only tetravalent Ti 4 and Ce 4 ions are present in the films, and the obtained TiO2 -CeO2 films appear good uniformity and high density. The films deposited on the glass can shield ultraviolet light without significant absorption of visible light.     

闪蒸法制备N型Bi2( Te0.95Se0.05)3薄膜的微结构及热电性能研究

采用闪蒸法在温度为473 K的玻璃基体上沉积了厚度为800 nm的N型Bi2(Te0.95Se0.05)3热电薄膜,并在373 ～573 K进行1h的真空退火处理.利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)分别对薄膜的物相结构和表面形貌进行分析.采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用四探针法进行测量,采用温差电动势法在室温下对薄膜的Seebeck系数进行表征.沉积态薄膜表明了(015)衍射峰为最强峰,退火处理后最强衍射峰为(006);沉积态薄膜由许多纳米晶粒组成,晶粒大小分布较均匀,平均晶粒尺寸大约45 nm,退火处理后出现了斜方六面体的片状晶体结构.退火温度从373 K增加到473 K,薄膜的电阻率和Seebeck系数增加,激活能也随退火温度的增加而增大,退火温度从523 K增加到573 K,薄膜的电阻率和Seebeck系数都缓慢下降.从373 ～473 K,热电功率因子随退火温度的升高而单调增加,退火温度为473 K时,电阻率和Seebeck系数分别是2.7 mΩ.cm和-180μV·K-1,热电功率因子最大值为12 μW.cmK-2.退火温度从523 K增加到573 K,热电功率因子的值逐渐下降.     

Si/Nanocrystalline Diamond Film Heterojunction Diodes Preparation

With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.     

纳米TiO2薄膜的制备及自清洁性能研究

通过溶胶一凝胶法在普通钠钙玻璃表面制备均匀透明的纳米TiO2自清洁薄膜。探讨了薄膜制备的工艺条件，并利用X射线衍射（XRD）、紫外分光光度计对薄膜的晶型、晶粒大小和透光率进行了表征，研究了在紫外光照射下薄膜的光催化性能及亲水性能。结果表明，制得的TiO2薄膜具有较强的自清洁性能。     

熔凝玻璃薄膜的形成及其C-V特性

报道了在成功地研制彩色电视机用的高反压大功率晶体管钝化玻璃粉的基础上，摸索了采用电泳涂覆技术以形成一定厚度的高质量熔凝玻璃薄膜的方法，用差热分析(DTA)技术确定了玻璃粉的软化温度、烧结温度分别为590和680℃。用X射线衍射(XRD)和光电子能谱(XPS)对薄膜的物相和组份进行了分析，同时，将熔凝玻璃薄膜做成金属-绝缘体-半导体(MIS)结构，对样品进行了C-V特性测量，固定电荷密度为1.4×1010cm     

Cyclic Electrodeposition of Yb-Bi Thin Films

Recently ,Bihasattractedmuchattentionforap plicationsinvolvingfieldandcurrentsensingduetoitsextremelyhighmagnetoresistance (MR )relativetothosereportedforGMRandCMRmaterials .ThelargeMRofBiarisesfromitspeculiarelectronicstructure .Ithasasmallenergyoverlap (～38meV)betweentheLconductionandTholebands ,smalleffectivemasses(atthebandedge ,me=0 0 0 2m0 ) ,andhighmobil ities .Becauseoftheseproperties ,Bihasfrequentlybeenusedforquantumconfinementstudiesinquan tumwellandquantumwiregeometries[1] …     

磁控溅射Ti/WO_3薄膜的微结构及光学性能

采用直流反应磁控溅射技术在玻璃基片上制备不同氧分压的Ti掺杂的WO3薄膜。用X射线衍射(XRD)、分光光度计、台阶仪等对薄膜的结构、光学性质进行表征;分析不同的氧分压对气敏薄膜透光率和结构的影响。结果表明,氧分压增大,膜厚减小,薄膜的平均晶粒尺寸增大,晶面间距增大,光学带隙变小。并用包络线法和经验公式法计算出薄膜的光学常数,结果表明,折射率和消光系数随氧分压的增加而增大。     

Phase formation and microstructure in sputter-deposited Ti-Mo-C and Ti-W-C thin films

Ti-Mo-C and Ti-W-C films were deposited by cosputtering from carbide targets in order to examine the phase formation, microstructure, and mechanical properties. A series of Ti-Mo-C films were deposited, with compositions ranging from TiC to Mo₂C. The X-ray diffraction (XRD) analysis showed that multiphase Ti-Mo-C films, containing the (Ti,Mo)C, Mo₂C, and Mo₃C₂ phases, were only obtained in highly Mo-rich films. The transmission electron microscopy (TEM) analysis showed a higher defect content in single-phase alloy Ti-Mo-C films in comparison to TiC alone. The hardness for most Ti-Mo-C films was in the range of 8 to 10 GPa, but even lower values were obtained in the multiphase films. Ti-W-C films deposited by cosputtering of TiC and WC formed only (Ti,W)C solid solutions. The X-ray photoelectron spectroscopy (XPS) analysis of peak positions showed that the W 4f _7/2 binding energy decreased with increasing W content. The hardness of most of the Ti-W-C coatings was in the range of 15 to 17 GPa; however, a sample with 40 pct W had a hardness of 29 GPa. The TEM analysis of this sample revealed an extremely small grain size and a higher film density. The high hardness of this specimen is attributed to Hall-Petch strengthening.     

Fabrication and Magnetic Properties of Highly Oriented ZnO:Eu Films by Sol-Gel Process

A series of Eu-doped ZnO films were prepared by a sol-gel method. Precursor and films were characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-vis spectra, as well as the magnetism measurement. The wurtzite structure of obtained films presents an extreme high c-orientation character. The film susceptibility resembles a Curie-Weiss behavior at high temperature, and presents an obvious enhancement at low temperature, indicating the presence of antiferromagnetic interactions in the Zn0.9Eu0.1O films.     

Grain Size and Wettability of TiO2/SiO2 Photocatalytic Composite Thin Films

The uniform transparent TiO2/SiO2 photocatalytic composite thin films are prepared by sol-gel method on the soda lime glass substrates, and characterized by UV-visible spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), BET surface area, FTIR spectroscopy and X-ray photoelectron spectroscopy (XPS). It was found that the addition of SiO2 to TiO2 thin films can suppress the grain growth of TiO2 crystal, increase the hydroxyl content on the surface of TiO2 films, lower the contact angle for water on TiO2 films and enhance the hydrophilic property of TiO2 films. The super-hydrophilic TiO2/SiO2 photocatalytic composite thin films with the contact angle of 0-° are obtained by the addition of 10%-20% SiO2 in mole fraction.     

衬底氮化对HVPE法生长GaN的影响

研究了衬底氮化过程对于氢化物气相外延(HVPE)方法生长的GaN膜性质的影响。X射线衍射和原子力显微镜以及光荧光测量的结果表明，不同的氮化时间导致Al2O3表面的成核层发生变化，进一步影响了外延层中的位错密度和应力分布。     

纳米TiO2薄膜的制备方法对NPC太阳电池性能的影响

采用溶胶凝胶法、粉末涂敷法在导电玻璃上制得纳米TiO₂薄膜.X射线衍射实验表明该薄膜主要是锐钛矿相结构,透射电子显微镜测得薄膜晶粒尺寸为30nm左右,扫描电镜观察了薄膜的表面形貌.分析了这两种方法制得的纳米TiO₂薄膜所组成的染料敏化太阳电池的性能,提出了一种新的制作纳米TiO₂薄膜的方法.     

超声电沉积制备Cu-In合金膜

采用超声电沉积-热处理两步法和超声共沉积一步法在钼基底上制备了致密的Cu-In合金薄膜。分别用SEM,EDS和XRD分析了Cu/In双层膜以及Cu-In合金膜的表面形貌、成分及相组成。结果表明:采用不同的电沉积工艺参数可以调节合金膜的Cu/In比率;超声电沉积可以得到晶粒细小、均匀致密的Cu,In以及Cu-In合金薄膜;两步法中超声电沉积得到的双层膜为CuIn和Cu或In相,经过热处理后转变为Cu11In9和Cu或In相;一步法超声共沉积得到的合金膜主要为CuIn相,根据Cu/In比率的不同,还会含有少量的Cu11In9或In相。     

Characterization of hydroxyapatite film with mixed interface by Ar+ ion beam enhanced deposition

Ar+ ion beam enhanced deposition (IBED) was used to produce a hydroxyapatite (HA) film on polished titanium substrates. In this study, the HA ceramic target was sputtered by an argon-ion beam with an energy of 1.5 KeV, and the sputtered film was intermittently bombarded by energetic argon-ions at 60 KeV. An effective Ca-Ti mixed layer produced by the energetic argon-ion bombardment was confirmed by using Auger electron spectroscopy. The characteristics of the deposited films were evaluated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. XRD analysis revealed that the as-deposited film was amorphous, and a hydroxyapatite-type structure was obtained from the post-heat treatment of the deposited films. SEM observations showed that no distinct difference in surface morphology was found between the as-deposited and heat-treated samples for Ar+ IBED films, suggesting a strongly bonded HA film on the titanium substrate. In comparison with the HA target, some chemistry alterations were brought about in the deposited films, such as the incorporation of CO3, the loss of the OH groups and some distortion of the phosphate lattice.     

Effects of Hydrogen Ion Implantation on TiC-C Coating of Stainless Steel

Titanium carbide coatings are widely used as various wear-resistant material.The hydrogen erosion resistance of TiC-C films and the effect of hydrogen participation on TiC-C films were studied.Seventy-five percent TiC-C films are prepared on stainless steel surface by using ion mixing,where TiC-C films are deposited by rf magnetron sputtering followed by argon ion bombardment.The samples are then submitted to hydrogen ion implantation at 1.2×10-3 Pa.Characterization for the 75% TiC-C films was done with SIMS,XRD,AES,and XPS.Secondary ion mass spectroscopy (SIMS) was used to analyze hydrogen concentration variation with depth,X-Ray diffraction (XRD) was used to identify the phases,and Auger electron spectra (AES) as well as X-ray photoelectron spectra (XPS) were used to check the effects of hydrogen on shifts of chemical bonding states of C and Ti in the TiC-C films.It is found that TiC-C films on stainless steel surface can prevent hydrogen from entering stainless steel.