高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器

本文报道了GaAs/AlGaAs 多量子阱空间光调制器的最新研究进展。使用MBE生长了3英寸材料,其横向均匀性好于0.1%, 法布里-珀罗腔谐振波长变化小于0.9nm。利用调节层腐蚀进行调节以后,在6.7V调制电压下实现了102的对比度。理论和实验均表明,调节层腐蚀能够在在宽范围内调节平衡条件,从而实现多量子阱空间光调制器的高对比度。     

金属腔量子阱红外探测器共振波长的角度依赖性

测量了金属腔量子阱红外探测器在斜入射条件下的光电流谱,斜入射条件分为入射面垂直于器件长轴和平行于器件长轴两种情形.从实验和理论上研究了金属腔共振模对入射角度的依赖性.实验结果表明:入射面垂直于器件长轴时,腔模共振波长不随入射角度变化;入射面平行于器件长轴时,腔模共振波长随入射角度变大而向短波移动.测试结果和推导出的共振...     

斜入射液晶空间光调制器的特性

用读出光斜入射到液晶空间光调制器(LC-SLM)的读出面,是一种有效的提高空间光调制器(SLM)读出效率的方法。测量了读出光以不同角度入射到液晶空间光调制器的读出面上时,相位调制深度与写入光强的关系、衍射效率与二值光栅对比度的关系。得到随着入射角度的增加,最大相位调制深度减小,而衍射效率变化并不明显。在45°时有最大相位调制深度2.0936π和35.4%的正一级衍射效率。     

基于DBR增强的850nm GaAs/AlGaAs单行载流子光电探测器

高速850 nm GaAs/AlGaAs面入射型单行载流子光电探测器(PD)是短距离光链路中的重要器件,面临着带宽和响应度之间的相互矛盾。报道了一种基于分布布拉格反射器(DBR)增强的GaAs/AlGaAs单行载流子光电探测器(UTC-PD)。DBR由20个周期的高/低Al组分的Al_xGa_1-xAs三元合金组成,可以在830～870 nm范围内形成大于0.9的反射。在AlGaAs DBR的增强下,将GaAs吸收层所需的厚度降低到1 040 nm,兼顾PD对光的吸收率和光生载流子的渡越时间。采用双台面、聚合物平面化、共面波导电极结构制作了UTC-PD器件。该器件在850 nm波长、-2 V偏压下具有19.26 GHz的-3 dB带宽和0.492 6 A/W的响应度。     

组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱

用分子束外延系统(MBE)生长了GaAs/AlGaAs非对称耦合双量子阱(ACDQW),用组合离子注入的方法,在同一块衬底上获得了不同注入离子As+、H+和不同注入剂量的GaAs/AlGaAs非对称耦合双量子阱单元,在未经快速热退火的条件下,于常温下测量了光调制反射光谱,发现各单元的子带间跃迁能量最大变化范围可达80meV.     

组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱

用分子束外延系统(MBE)生长了GaAs/AlGaAs非对称耦合双量子阱(ACDQW),用组合离子注入的方法,在同一块衬底上获得了不同注入离子As+、H+和不同注入剂量的GaAs/AlGaAs非对称耦合双量子阱单元,在未经快速热退火的条件下,于常温下测量了光调制反射光谱,发现各单元的子带间跃迁能量最大变化范围可达80meV.     

高性能InAs/GaAs量子点外腔激光器

为了获得高性能的量子点外腔激光器(ECL),利用InAs/GaAs量子点Fabry-Perot(FP)腔激光器研制了光栅外腔可调谐ECL。对InAs/GaAs量子点ECL进行了一系列的性能测试,主要包括单模稳定性测试、单模调谐范围测试、阈值电流密度测试、无跳模连续调谐测试和输出功率测试。在室温条件下获得了24.6nm的连续调谐范围,覆盖波长从999.2nm到1 023.8nm,并且实现了波长无跳模连续调谐。在调谐范围内最低阈值电流密度为1 525A/cm2,而且在中心波长处获得的单模输出功率为15mW,单模边模抑制比(SMSR)高达35dB。研究结果表明,通过构建光栅外腔可以实现高性能的InAs/GaAs量子点ECL。     

角度调谐短波红外光谱组件光谱分辨率特性研究

介绍了一种工作于1 355~1 555 nm的新型多通道短波红外光谱组件,并以理论和实验相结合的方式定量研究了入射角度对光谱组件各通道中心波长的影响.实验结果表明,在0~10°斜入射条件下光谱组件各通道中心波长呈现不同程度的短波方向偏移现象,偏移程度与入射角度呈正相关.分别绘制出理论和实验中心波长偏移曲线,实验发现在入射角为5°和10°时中心波长平均偏移幅度约为5.7 nm和18.67 nm.此外,参照实验得出的角度偏移曲线对两次不同入射角度条件下的光谱进行插值整合,成功地将光谱组件分辨率从7.5 nm提高到3 nm;在此实验基础上提出了通过改变入射角度发展一种多通道角度调谐光谱组件,进而利用此方法提高光谱组件的测试分辨率.该结论对后续设计光谱组件入射光学系统和提高光谱组件测试分辨率具有一定指导意义.     

导模共振光栅参量对共振波长和线宽的影响研究

为了能够设计出具有反射功能的导模共振光栅，采用光栅的等效介质理论、平面波导理论以及严格耦合波法，进行了理论分析和实验验证，设计了在TE偏振下波长850nm处具有反射共振的导模共振光栅。利用严格耦合波法，计算并分析了光栅参量、入射角以及波导层厚度对共振波长和线宽的影响。结果表明，随着占空比的增大，共振波长会红移，而共振线宽会随着占空比的增大先增后减，占空比为0.5时线宽能达到最宽；共振波长会随着光栅周期和波导层厚度的增大而增大，但线宽几乎不变，当周期从490nm增加到520nm时，共振波长红移了将近50nm，而当波导层厚度从217nm增加到251nm时，共振波长红移了将近25nm；光栅厚度变化对共振波长和共振线宽影响很微弱，当入射角是垂直入射时仅有一个共振峰，但是当入射角不为0°时会出现两个共振峰，并且两个共振波长随着入射角度的变大一个会蓝移而另一个则红移。该研究为实际制备反射导模共振光栅提供了理论指导。     

大光腔0.81μm波长的AlGaAs/GaAs双沟道平面隐埋异质结激光器

作为模拟光通信系统用的光源,大光腔0.8Pμm波长AlGaAs/GaAs双沟道平面隐埋异质结(DC—PBH)激光二极管已研制成功。在调制频率f=100MHZ和调制度m=0.9时获得了线性光输出/电流特性和单纵模光谱。     

光纤F-P传感器偏振互相关解调中光楔参数的影响研究

对光纤法布里-珀罗(F-P)腔长偏振互相关解调法中的双折射光楔进行了理论和实验研究,建立了双折射光楔对干涉光程差影响的数学模型,并进行了数值仿真。仿真结果表明,当楔角为4°时,要保证楔面内任意点处的光程误差在15nm以内,入射角应小于0.3°,光楔光轴倾斜应小于0.8°,楔面垂直度误差应小于0.15°。采用光楔进行了偏振光干涉实验,实验干涉条纹与理论条纹基本一致,实验干涉条纹的倾斜度与理论倾斜度相差0.02°。     

Study on the properties of the two-dimensional curved surface metamaterial

Metamaterials become a breakthrough technology due to their potential applications. We numerically investigate the properties of the two-dimensional curved surface metamaterial in the microwave regime. Unlike one-dimensional planar metamaterial, some novel properties are stimulated in the designed two-dimensional curved surface metamaterial. The reflected wave is transformed into its orthogonal polarization wave in addition to the absorbing components for normal linearly polarized electromagnetic wave incidence. The polarization conversion ratio and absorption are discussed detailly under different oblique incident conditions both in transverse electric wave and transverse magnetic wave. The reflections are stable for transverse magnetic wave while changing obviously for transverse electric wave when the incident angle changes from 0° to 60°. The tendency of reflections is almost consistent when the polarization angle changes from 0° to 45° under normal incidence. We also discuss the influences of the geometric parameters on the properties of the two-dimensional curved surface metamaterial. The designed two-dimensional curved surface metamaterial can be a very potential candidate for the radar scattering section reduction and electromagnetic stealth.     

飞秒激光用超宽带金属介质膜光栅的优化设计和工艺容差分析

基于严格耦合波理论,提出了金属介质膜光栅（MMDG）的带宽评价函数和波长偏离评价函数,并对宽光谱MMDG结构参数进行优化。数值模拟分析表明,当MMDG的槽深为290nm、剩余厚度为10nm、占空比取0．28和入射角为60。时,对以1053nm为中心波长的TE波,其一1级衍射效率优于97％的带宽达到190nm。对结构参数...     

金属镜微腔发光方向性研究

在抛光的K9玻璃衬底上,制作了结构为玻璃/Ag(30 nm)/Alq(120 nm)/Ag(30 nm)的全金属镜微腔结构。研究了在不同探测角度下器件谐振模式的角色散效应及其光谱半高宽(FWHM)的变化特性。微腔器件的谐振模式随偏离角度的增加而蓝移,当角度从0°到60°时,发光峰值相应地从585.8 nm蓝移到546.6 nm,光谱FWHM从26.8 nm增大到36.6 nm。分析并解释了光谱展宽以及谐振模式角色散效应的原因,提出了抑制微腔器件角色散的方法。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams

The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium （Ga） and Arsenic （As） ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82° and 84°.     

具有ODR结构的高压倒装氮化镓基发光二极管

通过在传统ITO+DBR膜系结构基础上令电极金属与DBR层形成ODR(全角反射镜)膜系结构的方法,设计并制备了具有ODR结构的高压倒装氮化镓基发光二极管,有效提高了LED芯片的光效。ODR结构由DBR(分布布拉格反射镜)层上联接芯粒的电极金属和DBR层组成,经过理论分析和计算,与传统ITO+DBR结构器件相比,在400～550nm波长范围、全角度入射时平均反射率Rave从86.25%提升到了96.71%。实验制备了传统ITO+DBR结构和ODR结构的3颗芯粒串联的高压倒装氮化镓基LED器件,尺寸为0.2mm×0.66mm,ODR结构器件的有效反射结构面积增加了4.8%,饱和电流增加了12mA,用3030支架封装后在30mA的测试电流下,电压降低了0.163V,辐射功率提升了3.78%,在显色指数均为71时光效提升了5.42%。     

不同入射角下的激光干扰效果研究

为了研究不同入射角下的激光干扰效果,采用逐步调节光轴指向的方法,对不同入射角下的干扰效果进行了实验研究和理论分析,取得了不同入射角下激光束在探测器上光斑位置、接收能量和光斑形状的数据。结果表明,光斑位置随入射角的增大而线性移动,对于本文中的光电成像系统而言,移动速率为入射角每增加0.1°,光斑偏离探测器中心16个像素;接收能量随入射角的增大而减小,对于本文中视场角为8°的光学系统而言,减小的幅度不超过1%;不同入射角下的激光光斑形状满足空间平移不变性。这一结果对开展激光干扰光电成像系统试验是有帮助的。     

Step structure during organometallic vapor phase epitaxial growth of ordered GaInP

The nature of the steps on the nominally (00l)-oriented surface of Ga_0.5In_0.5P lattice matched to GaAs has been studied using high resolution atomic force microscopy. The layers were grown by organometallic vapor phase epitaxy (OMVPE) at a temperature of 620°C on substrates misoriented by angles,?_m, from 0 to 9° toward the $[\bar 110]$ direction in the lattice. An array of bunched steps from 25 to 50Å in height, depending on the substrate misorientation angle, is observed on the surface. An unusual feature of these bunched or super-steps, as compared to those seen for GaAs surfaces, is that they have relatively short lengths of a few thousand Angstroms. In addition, not all of the steps congregate into the surface steps. Thus, the surface consists of three “phases”: (001) flats, (11n) facets, and misoriented areas covered by an array of monolayer steps. The fraction of steps contained in the supersteps decreases monotonically as ?_m increases from 3 to 9°. Again, this differs from reports of the nature of GaAs surfaces grown under similar conditions where essentially all of the steps congregate into supersteps. The value of n for the (lln) facets also varies with misorientation angle: The angle between the (001) and the (lln) facets increases from approximately 11-12° for ?_m = 3° to nearly 30? for ?_m = 9°. An attempt was made to correlate the surface structure with ordering, which is observed to vary significantly with misorientation angle. The degree of order is found to increase monotonically with the fraction of steps forming supersteps.     

真空远紫外波段铝基漫反射板BRDF特性研究

利用铝基漫反射板可以实现在真空紫外波段对星载光谱仪器的在轨辐射定标,通过大气外太阳辐照度与漫反射板的BRDF特性可以对探测器进行标定,漫反射板在这个过程中起到标准传递的作用。为了研究铝基漫反射板在真空远紫外波段的BDRF特性,通过对光源进行监测和补偿,使用相对测量的方式,减少了探测器响应不线性和光源不稳定性带来的误差。使用BRDF测量设备对漫反射板在110 nm、150 nm和200 nm三个波长下以正入射和30°斜入射的组合进行BRDF测量,实验结果表明,BRDF值与波长、入射角度和天顶角等因素相关,在正入射时,110 nm和150 nm波长的BRDF峰值比200 nm时分别下降26.10 %和11.94 %,斜入射时,110 nm和150 nm波长的BRDF峰值比200 nm时分别下降31.04 %和16.04 %;在正入射和斜入射时,BDRF值均随方位角的增加而减少,但是正入射时漫反板的散射相对比较均匀,斜入射时的镜面反射现象明显;随入射角度的增加,BRDF值随天顶角的增加下降趋势更快。实验结果可以为铝基漫反射板在远紫外波段的BRDF特性提供数据参考,为星上定标提供依据。