基片温度对铌掺杂ITO透明导电薄膜性能的影响

采用磁控溅射法以铌(Nb)掺杂氧化铟锡(ITO)为靶材制备了厚度为300nm的ITO:Nb薄膜,研究了不同基底温度下,薄膜的结构、导电性和可见光区的透过率。XRD分析表明所制备的ITO:Nb薄膜均为In2O3相;AFM显示ITO:Nb薄膜的均方根粗糙度随着温度的升高逐渐变大;薄膜的电阻率随着温度的升高逐渐减小,在300℃时得到最小值1.2×10-4·cm。电阻率下降主要是因为霍耳迁移率增大和载流子浓度逐渐增加。ITO:Nb薄膜在可见光内的平均透过率均大于87%,且随着温度的升高,吸收边发生"红移",禁带宽度逐渐增加。     

退火温度对掺杂钼板性能的影响

本文简述了退火温度对掺杂钼板的室温抗拉性能、弯曲塑－脆转变温度及室浊反复弯曲性能影响。试样经１３００℃真空退火－小时后，其室温抗拉强度为５８５ＭＰａ，伸长率为３１％，弯曲塑－脆转转变温度低于－７８℃，室浊进反复弯曲９０度的次２１次；经１８００℃退火后，其室温抗拉强度为４９５ＭＰａ，伸长率为４８％，弯曲塑－脆转变温度为４０℃，室温时反复弯曲９０度的次数为６次。     

退火温度对ZnTe薄膜结构和性能的影响

采用脉冲激光沉积法(PLD)在玻璃衬底上通过室温溅射和原位退火制备了ZnTe薄膜。通过X射线衍射(XRD)、原子力显微镜(AFM)、紫外-可见分光光度计和荧光分光光度计等研究了退火温度对薄膜结构和性能的影响。结果表明:薄膜具有明显的<110>择优生长特征。随着退火温度的升高,薄膜结晶质量逐渐提高,晶粒长大,透过率增加;但过高的退火温度降低了晶体的结晶质量和透过率。当退火温度为280℃时,ZnTe薄膜具有最好的结晶质量,平均透过率达到90%左右。     

Cu含量对FePt薄膜退火温度的影响

采用共溅射方法存玻璃基片上制备了（FePt）1-xCux合金薄膜，FePt合金中添加Cu可以有效降低退火温度，（FePt）1-xCux（x=19．5％）在350℃退火后可以使面内矫顽力Hc〃，达到200kA／m，垂直矫顽力Hc⊥达到280kA／m左右，而纯FePt仅有几千A／m。X射线衍射结果表明退火后形成的FePtCu三元合金是降低退火温度的主要原因。剩磁曲线分析表明Cu的加入不能明显降低晶粒间交换耦合作用。（FePt）1-xCux在400℃退火可以得到10^-24m^3的磁激活体积。     

退火温度对掺杂W—Re丝组织和性能的影响

研究了退火温度对３种含Ｒｅ量不同的掺杂Ｗ－Ｒｅ丝组织和性能的影响。结果表明：退火温度改变了掺杂Ｗ－Ｒｅ丝的抗拉强度、延伸率、电阻率、弯折及晶粒组织。３种含Ｒｅ量不同的掺杂Ｗ－Ｒｅ丝的抗拉强度随退火温度的提高而降低；在相同退火温度下含Ｒｅ量提高，强度越大。当退火温度升至１６００℃时，３种掺杂Ｗ－Ｒｅ丝的延伸度达到最高值，随着退火温度继续升高，延伸率明显下降。Ｗ－Ｒｅ丝电阻率随退火温度提高和Ｒｅ含量增     

退火温度对钴铁氧体薄膜结构和性能的影响

采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...     

退火处理对ITO和ITO:Zr薄膜性能的影响

利用磁控溅射在室温条件下沉积ITO薄膜和ITO：Zr薄膜,对比研究在空气中退火处理对ITO和ITO：Zr薄膜性能的影响。结果表明,Zr的掺杂促进了（400）晶面的取向,随着退火温度的升高,薄膜表面颗粒增大,表面粗糙度有所降低。室温下Zr的掺杂显著改善了薄膜的光电性能,随着退火温度的升高,ITO和ITO：Zr薄膜的方阻都表现为先降后升的趋势,ITO：Zr薄膜在较低的退火温度下可见光透过率就可达到80%以上,直接跃迁模型确定的光学禁带宽度Eg呈现了先升后降的变化。ITO：Zr薄膜比ITO薄膜显示了更高的效益指数,揭示了ITO：Zr薄膜具有更好的光电性能。     

退火温度对磁控溅射Mo薄膜结构和性能的影响

采用磁控溅射技术在石英基体上制备了厚度为600 nm的Mo薄膜,并在不同温度下(400～ 900℃)对其进行退火处理.通过XRD、SEM、四探针测试仪对Mo薄膜的结构和性能进行了分析.结果表明,随着退火温度的升高,(110)晶面择优取向特性增强.Mo薄膜在退火温度为800℃时电阻率达到最小值3.56×10-5 Ω·cm,在900℃退火时薄膜出现宽度约为50 nm的微裂纹且薄膜电阻率较大.     

退火温度对SiC薄膜表面形貌和结构的影响

采用射频磁控溅射法在单晶Si(100)表面制备了非晶态SiC薄膜,并于真空热处理炉中进行(800～1200)℃×1h退火处理。通过X射线衍射、扫描电镜以及摩擦磨损试验研究了退火温度对薄膜结构、表面形貌以及性能的影响。结果表明,退火温度在800℃以上薄膜结构开始发生明显的晶态转变,在1000℃时薄膜主要结构为3C-SiC,且薄膜表面晶粒细小、致密,摩擦系数约为0.2。在1200℃退火时,薄膜为混晶结构,且薄膜晶粒明显粗化。     

退火温度对Mo薄膜微观结构及形貌的影响

采用直流磁控溅射技术,制备了厚度为3.8μm的Mo薄膜,并对其在不同温度下进行了退火处理。采用白光干涉仪和SEM对Mo薄膜进行了表征,讨论了不同温度对薄膜表面形貌的影响;利用XRD对Mo薄膜的结构进行了分析。结果表明:随着退火温度由450℃升高到1 050℃,晶粒平均尺寸逐渐增大,微曲应力呈减小趋势;在温度高于900℃时,薄膜发生再结晶,同时表面有微裂缝及大量气孔出现;薄膜的表面粗糙度随退火温度的升高有逐步增大的趋势。     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.     

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400～600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm.     

Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films

Indium tin oxide films were made with their stoichiometry controlled to give optimum electrical and optical properties. They were deposited by d.c. magnetron sputtering on glass substrates at room temperature. The mechanical properties of these films were also studied. The initial experiments show the dependence of resistivity on film thickness. The controlled processes gave a resistivity of about 10⁻⁵ Ωm and visible transmission of about 85%. The performance of ITO films can be increased by annealing the films in argon ambient.     

The characteristics of indium tin oxide films prepared on various buffer layer-coated polymer substrates

The optoelectronic and mechanical properties of flexible indium tin oxide (ITO) films are critical to the development of flexible optoelectronic devices. To improve the characteristics of the flexible films, the effects of inorganic buffer layers on the optoelectronic and mechanical characteristics of flexible ITO films prepared by ion-beam assisted deposition at room temperature were investigated. The results show that four inorganic buffer materials: SiO₂, Ta₂O₅, Al₂O₃ and TiO₂, have different effects on the optical transmission, sheet resistance and mechanical properties of ITO films. Ta₂O₅ buffer layer induces the highest optical transmission. SiO₂ buffer layer leads to the lowest sheet resistance. TiO₂ buffer layer reveals the most superior electrical stability against bending, which is attributed to the low thermal stress in ITO film.     

Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

The effect of annealing temperature on the electrical and optical properties of indium zinc oxide (IZO) (In₂O₃:ZnO = 90:10 wt.%) thin films has been investigated. The IZO thin films were deposited on glass substrates by radio frequency magnetron sputtering and then subjected to annealing in a mixed ambient of air and oxygen at 100, 200 and 300 °C. All the IZO films were found to have amorphous structure. With the increase of the annealing temperature, the carrier concentration decreased and the resistivity increased. The average transmittance of IZO thin films decreased slightly with annealing temperature. Interestingly, a systematic reduction of the optical band-gap from 3.79 eV to 3.67 eV was observed with annealing temperature. The change in optical band-gap was observed to be caused predominantly by Burstein-Moss band-gap widening effect suggesting unusual absence of band narrowing effect. The effects on optical and electrical properties of IZO films have been discussed in detail.     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.     

Photoluminescence properties of hexagonal indium tin oxide nanopowders prepared by solvothermal method

Hexagonal structure indium tin oxide(ITO)nanopowders were prepared by a solvothermal process at only 175 ℃ for 24 h and post-annealing at 400 ℃, using metal indium and SnCl_4·5 H_2 O as the raw materials. The morphology, crystal structures and structure defects of products were, respectively, analyzed by scanning electron microscopy(SEM), X-ray diffraction(XRD) and confocal microprobe Raman system, the elemental state was investigated by X-ray photoelectron spectroscopy(XPS), and the optical properties were carried out by ultraviolet-visible(UV-Vis) and photoluminescence(PL) spectrophotometers. The results show that the products are hexagonal structure with a particles size of 28-41 nm; the morphology of products consists of sphere and irregular cubic.When pH values of solution increase, the content of oxygen vacancies increases and the optical band gap varies from3.59 to 3.78 eV. The products exhibit strong emission at417 nm with an excitation of 370 nm, and the PL intensity of samples increases with pH values increasing. Contrasting to cubic structure ITO powder, the hexagonal structure ITO has narrower optical band gap and higher PL intensity under the same excitation wavelength.     

Effect of Sn~(4+) content on properties of indium tin oxide nanopowders

Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.