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采用磁控溅射法以铌(Nb)掺杂氧化铟锡(ITO)为靶材制备了厚度为300nm的ITO:Nb薄膜,研究了不同基底温度下,薄膜的结构、导电性和可见光区的透过率。XRD分析表明所制备的ITO:Nb薄膜均为In2O3相;AFM显示ITO:Nb薄膜的均方根粗糙度随着温度的升高逐渐变大;薄膜的电阻率随着温度的升高逐渐减小,在300℃时得到最小值1.2×10-4·cm。电阻率下降主要是因为霍耳迁移率增大和载流子浓度逐渐增加。ITO:Nb薄膜在可见光内的平均透过率均大于87%,且随着温度的升高,吸收边发生"红移",禁带宽度逐渐增加。 相似文献
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退火温度对掺杂钼板性能的影响 总被引:1,自引:0,他引:1
本文简述了退火温度对掺杂钼板的室温抗拉性能、弯曲塑-脆转变温度及室浊反复弯曲性能影响。试样经1300℃真空退火-小时后,其室温抗拉强度为585MPa,伸长率为31%,弯曲塑-脆转转变温度低于-78℃,室浊进反复弯曲90度的次21次;经1800℃退火后,其室温抗拉强度为495MPa,伸长率为48%,弯曲塑-脆转变温度为40℃,室温时反复弯曲90度的次数为6次。 相似文献
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Cu含量对FePt薄膜退火温度的影响 总被引:1,自引:0,他引:1
采用共溅射方法存玻璃基片上制备了(FePt)1-xCux合金薄膜,FePt合金中添加Cu可以有效降低退火温度,(FePt)1-xCux(x=19.5%)在350℃退火后可以使面内矫顽力Hc〃,达到200kA/m,垂直矫顽力Hc⊥达到280kA/m左右,而纯FePt仅有几千A/m。X射线衍射结果表明退火后形成的FePtCu三元合金是降低退火温度的主要原因。剩磁曲线分析表明Cu的加入不能明显降低晶粒间交换耦合作用。(FePt)1-xCux在400℃退火可以得到10^-24m^3的磁激活体积。 相似文献
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研究了退火温度对3种含Re量不同的掺杂W-Re丝组织和性能的影响。结果表明:退火温度改变了掺杂W-Re丝的抗拉强度、延伸率、电阻率、弯折及晶粒组织。3种含Re量不同的掺杂W-Re丝的抗拉强度随退火温度的提高而降低;在相同退火温度下含Re量提高,强度越大。当退火温度升至1600℃时,3种掺杂W-Re丝的延伸度达到最高值,随着退火温度继续升高,延伸率明显下降。W-Re丝电阻率随退火温度提高和Re含量增 相似文献
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利用磁控溅射在室温条件下沉积ITO薄膜和ITO:Zr薄膜,对比研究在空气中退火处理对ITO和ITO:Zr薄膜性能的影响。结果表明,Zr的掺杂促进了(400)晶面的取向,随着退火温度的升高,薄膜表面颗粒增大,表面粗糙度有所降低。室温下Zr的掺杂显著改善了薄膜的光电性能,随着退火温度的升高,ITO和ITO:Zr薄膜的方阻都表现为先降后升的趋势,ITO:Zr薄膜在较低的退火温度下可见光透过率就可达到80%以上,直接跃迁模型确定的光学禁带宽度Eg呈现了先升后降的变化。ITO:Zr薄膜比ITO薄膜显示了更高的效益指数,揭示了ITO:Zr薄膜具有更好的光电性能。 相似文献
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Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering 总被引:1,自引:0,他引:1
LI Shitao QIAO Xueliang CHEN Jianguo JIA Fang WU Changle 《稀有金属(英文版)》2006,25(4):359-364
Tin-doped indium oxide (ITO) thin films were prepared using conventional radio frequency (RF) planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1:1 at various IR irradiation temperatures T1 (from room temperature to 400℃). The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film (Rp-v) and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film's refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote (fo2), and the mole ratio of Sn/In in the samples reduces with an increase info2. 相似文献
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用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400~600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm. 相似文献
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《Surface & coatings technology》1999,111(2-3):163-171
Indium tin oxide films were made with their stoichiometry controlled to give optimum electrical and optical properties. They were deposited by d.c. magnetron sputtering on glass substrates at room temperature. The mechanical properties of these films were also studied. The initial experiments show the dependence of resistivity on film thickness. The controlled processes gave a resistivity of about 10−5 Ωm and visible transmission of about 85%. The performance of ITO films can be increased by annealing the films in argon ambient. 相似文献
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The optoelectronic and mechanical properties of flexible indium tin oxide (ITO) films are critical to the development of flexible optoelectronic devices. To improve the characteristics of the flexible films, the effects of inorganic buffer layers on the optoelectronic and mechanical characteristics of flexible ITO films prepared by ion-beam assisted deposition at room temperature were investigated. The results show that four inorganic buffer materials: SiO2, Ta2O5, Al2O3 and TiO2, have different effects on the optical transmission, sheet resistance and mechanical properties of ITO films. Ta2O5 buffer layer induces the highest optical transmission. SiO2 buffer layer leads to the lowest sheet resistance. TiO2 buffer layer reveals the most superior electrical stability against bending, which is attributed to the low thermal stress in ITO film. 相似文献
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Ju-Won JeonDae-Woo Jeon Trilochan SahooMyoung Kim Jong-Hyeob BaekJessica Lynn Hoffman Nam Soo KimIn-Hwan Lee 《Journal of Alloys and Compounds》2011,509(41):10062-10065
The effect of annealing temperature on the electrical and optical properties of indium zinc oxide (IZO) (In2O3:ZnO = 90:10 wt.%) thin films has been investigated. The IZO thin films were deposited on glass substrates by radio frequency magnetron sputtering and then subjected to annealing in a mixed ambient of air and oxygen at 100, 200 and 300 °C. All the IZO films were found to have amorphous structure. With the increase of the annealing temperature, the carrier concentration decreased and the resistivity increased. The average transmittance of IZO thin films decreased slightly with annealing temperature. Interestingly, a systematic reduction of the optical band-gap from 3.79 eV to 3.67 eV was observed with annealing temperature. The change in optical band-gap was observed to be caused predominantly by Burstein-Moss band-gap widening effect suggesting unusual absence of band narrowing effect. The effects on optical and electrical properties of IZO films have been discussed in detail. 相似文献
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Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81% in near-infrared region and about 87% in visible region. 相似文献
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Hexagonal structure indium tin oxide(ITO)nanopowders were prepared by a solvothermal process at only 175 ℃ for 24 h and post-annealing at 400 ℃, using metal indium and SnCl_4·5 H_2 O as the raw materials. The morphology, crystal structures and structure defects of products were, respectively, analyzed by scanning electron microscopy(SEM), X-ray diffraction(XRD) and confocal microprobe Raman system, the elemental state was investigated by X-ray photoelectron spectroscopy(XPS), and the optical properties were carried out by ultraviolet-visible(UV-Vis) and photoluminescence(PL) spectrophotometers. The results show that the products are hexagonal structure with a particles size of 28-41 nm; the morphology of products consists of sphere and irregular cubic.When pH values of solution increase, the content of oxygen vacancies increases and the optical band gap varies from3.59 to 3.78 eV. The products exhibit strong emission at417 nm with an excitation of 370 nm, and the PL intensity of samples increases with pH values increasing. Contrasting to cubic structure ITO powder, the hexagonal structure ITO has narrower optical band gap and higher PL intensity under the same excitation wavelength. 相似文献
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Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+. 相似文献