Structural Variation of the BaTi4O9 Thin Films Grown by RF Magnetron Sputtering

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi₅O₁₁ phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi₄O₉ phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi₄O₉ grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi₄O₉ thin films were successfully grown on Pt/Ti/SiO₂/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.     

Processing Dependence of Texture, and Critical Properties of YBa2Cu3O7−δ Films on RABiTS Substrates by a Non-Fluorine MOD Method

YBa₂Cu₃O_{7− δ} (YBCO or Y123) films on rolling-assisted biaxially textured substrates (RABiTS) were prepared via a fluorine-free metallorganic deposition (MOD) through spin coating, burnout, and high temperature anneal. The effects of substrate texture and surface energy of the CeO₂ cap layer were investigated. Except for the commonly accepted key factors, such as the textures of substrate and buffer layers, we found some other factors, for example, the deposition temperature of the cap layer, are also critical to the epitaxial growth of Y123 phase. With the CeO₂ cap layer deposited at relative high temperature of 700°C, a critical current density, J _c, over 1 MA/cm² has been demonstrated for the first time on Ni-RABiTS by a fluorine-free MOD method. Whereas for samples with CeO₂ cap layers deposited at a lower temperature of 600°C, even though XRD data showed a better texture on these buffer layers, texture degradations of YBCO grains under the optimized processing conditions were observed and a lower oxygen partial pressure around 40 ppm was necessary for the epitaxial growth of Y123 phase. As a result, J _c fell to 0.45 MA/cm² at 77 K. The observed phenomena points to the change of surface energy and reactivity of the CeO₂ cap layer with respect to the CeO₂ deposition temperature. In this paper, the YBCO phase diagram was also summarized.     

Pb-Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition

The interfaces between metal organic chemical vapor deposited PbTiO₃ thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO₂, amorphous TiO₂, ZrO₂, and TiN were deposited between the PbTiO₃ thin film and Si substrate, because the deposition of PbTiO₃ thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO₂ films were converted to PbTiO₃ by their reaction with diffused Pb and O ions during PbTiO₃ deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO₂ did not seem to react with Pb and O during PbTiO₃ deposition at the same temperature, but the Pb and O ions that diffused through the ZrO₂ layer formed a Pb silicate layer between the ZrO₂ and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO₃ at 410°C, but reacted with PbTiO₃ to form a lead-deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Multiferroic BiFeO3 Thin Films Buffered by a SrRuO3 Layer

Multiferroic BiFeO₃ thin films of huge polarization have been successfully realized by using SrRuO₃ as a buffer layer on a Pt/TiO₂/SiO₂/Si substrate. They consist of a single perovskite phase and are nearly randomly orientated, where the SrRuO₃ buffer layer lowers the crystallization temperature and improves the crystallinity of BiFeO₃. With increasing deposition temperature during magnetron sputtering, they undergo an apparent grain growth and reduction in surface roughness. The multiferroic thin films deposited on the SrRuO₃-buffered Pt/TiO₂/SiO₂/Si substrate at higher temperatures show much improved polarization and reduced coercive field, together with a lowered leakage current. A huge remnant polarization (2 P _r) of 150 μC/cm² and a coercive field (2 E _c) of 780 kV/cm were measured for the BiFeO₃ film deposited at 650°C.     

Deposition of Pb(Zr,Ti)O3 Thin Films by Metal-Organic Chemical Vapor Deposition Using β-diketonate Precursors at Low Temperatures

Lead zirconate titanate (PZT) thin films were deposited by metal-organic chemical vapor deposition (MOCVD) using β-diketonate precursors and 0₂ at temperatures below 500°C on variously passivated Si substrates. PZT thin films could not be deposited on bare Si substrates, owing to a serious diffusion of Pb into the Si substrate during deposition. Pt/SiO₂/Si substrates could partially block the diffusion of Pb, but a direct deposition of PZT thin films on the Pt/SiO₂/Si substrates resulted in a very inhomogeneous deposition. A TiO₂ buffer layer deposited on Pt/SiO₂/Si substrates could partially suppress the diffusion of Pb and produce homogeneous thin films. However, the crystallinity of PZT thin films deposited on the TiO₂-buffered Pt/SiO₂/Si substrate was not good enough, and the films showed random growth direction. PZT thin films deposited on the PbTiO₃-buffered Pt/SiO₂/Si substrates had good crystallinity and a- and c-axis oriented growth direction. However, the PZT thin film deposited at 350°C showed fine amorphous phases at the grain boundaries, owing to the low chemical reactivities of the constituent elements at that temperature, but they could be crystallized by rapid thermal anneaiing (RTA) at 700°C. PZT thin film deposited on a 1000-å PbTiO₃,-thin-film-buffered Pt/SiO₂/Si substrate at 350°C and rapid thermally annealed at 700°C for 6 min showed a single-phase perovskite structure with a composition near the morphotropic boundary composition.     

Lead Zirconate Titanate Thin Films by Aerosol Plasma Deposition: Microstructure Analysis

Lead zirconate titanate (Pb(Zr,Ti)O₃, PZT) thin films were grown on silicon 〈100〉 substrate by aerosol plasma deposition (APD) using solid-state-reacted powder containing donor oxide Nb₂O₅ when keeping the substrate at room temperature and 200°C. Crystalline phases of the deposited films have been analyzed via X-ray diffractometry (XRD), and microstructure via scanning and transmission electron microscopy (SEM and TEM). Cross-sectional TEM revealed that the microstructure comprised several layers including the deposited PZT film and the platinum-electrode-and-titanium-buffered layers on SiO₂–Si substrate. The Pt-electrode layer contained (111)_Pt twinned columnar grains with a slight misorientation and forming low-angle grain boundaries among them. The PZT layer contained randomly oriented grains embedded in an amorphous matrix. Some of the PZT grains, oriented with the zone axis Z = [[Twomacr]11]_PZT parallel to Z = [111]_Pt, were grown epitaxially on the Pt layer by sharing the (111)_PZT plane with the (111)_Pt twinned columnar Pt crystals. However, the existence of such an orientation relationship was confined to several nanosize grains at and near the PZT-Pt interface, and no gross film texture has been developed. An amorphous grain boundary phase, generated by pressure-induced amorphisation (PIA) in the solid state, was identified by high-resolution imaging. Its presence is taken to account for the densification of the PZT thin films via a sintering mechanism involving an amorphous phase on deposition at 25° and 200°C.     

Synthesis and Preparation of Lanthanum Aluminate Target for Radio-Frequency Magnetron Sputtering

A polycrystalline LaAlO₃ target for the radio-frequency (rf) magnetron sputterings of LaAlO₃ thin films has been prepared. These films serve as a buffer layer for high- T _c YBa₂Cu₃O_{7– x} superconducting thin films on Si. Synthesis of lanthanum aluminate powder from a mixture of La₂O₃ and Al₂O₃ powders was performed by calcining from 1000° to 1600°C in air. Characterization of the calcined powders by X-ray diffraction indicates that full development of LaAlO₃ phase was evident in the sample calcined for 3 h at 1600°C in air. A polycrystalline LaAlO₃ target was prepared by heat treatment at 1500°C for 2 h in air after pressureless sintering at 1750°C for 3 h in Ar. Thin films of the LaAlO₃ on Si (100) were obtained by rf magnetron sputtering using the target and oxygen-annealing the as-deposited films.     

Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors

Crystallization studies were performed of epitaxial La₂Zr₂O₇ (LZO) films on biaxially textured Ni–3at.%W substrates having thin Y₂O₃ (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c -axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850°–950°C in flowing one atmosphere gas mixtures of Ar–4% H₂ with an effective oxygen partial pressure of P(O₂)∼10⁻²² atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100°C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.     

Chemical Solution Deposition of Transparent and Metallic La0.5Sr0.5TiO3+x/2 Films Using Topotactic Reduction

Metallic and transparent La_0.5Sr_0.5TiO_{3+ x /2} films were prepared by the chemical solution deposition (CSD) method using topotactic reduction processing. The use of Si powder as the reducing agent was facile and allowed easy manipulation. It was observed that metallic (resistivity at 300 K ∼2.43 mΩ cm) and transparent (∼80% transmittance at visible light) La_0.5Sr_0.5TiO_{3+ x /2} films could be obtained with an annealing temperature of 900°C, which was significantly lower than the hydrogen reduction temperature (∼1400°C). The successful preparation of metallic and transparent La_0.5Sr_0.5TiO_{3+ x /2} films using CSD has provided a feasible route for depositing other perovskite-structured functional layers on La_0.5Sr_0.5TiO_{3+ x /2} films using this low-cost all CSD method.     

Raman Spectroscopic Study of Gallium-Doped Ba(Zn1/3Ta2/3)O3

Resonators of Ba(Zn_1/3Ta_2/3)O₃, sintered between 1450° and 1600°C, are characterized by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. The quality factors of the resonators are found to depend on sintering temperature, and at 1600°C there is evidence of Zn loss from the surface. The frequency of the A_1g Raman mode changes from 800.9 cm⁻¹ for a sample with Q = 80000 (2 GHz), to 794.5 cm⁻¹ when Q = 44000 (2 GHz). Changes in the position of this and other Raman modes are thought to be due to distortions of the oxygen octahedra, brought about by Zn loss. The presence of a BaTa₂O₆ phase at the surface is confirmed by XRD and SEM.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Preparation of Barium Titanate Films at 55°C by an Electrochemical Method

Work by previous investigators has shown that BaTiO₃ films can be synthesized from solution over temperature ranges from 80°C to greater than 200°C. In the present work, electrically insulating crystalline films of BaTiO₃ have been electrochemically deposited on titanium substrates at temperatures as low as 55°C. Auger spectroscopic analyses with depth profiling indicate that a titanium oxide layer whose thickness is governed by current density acts as a precursor to BaTiO₃. Formation of BaTiO₃ is found to be favored only in highly alkaline solutions. This is consistent with the phase stability reported for the Ba─Ti─CO₂─H₂O system at 25°C. Lower processing temperatures (55°C) favor the formation of thick, electrically resistive, and wellcrystallized BaTiO₃ films, apparently due to increased oxygen solubility in the electrolyte solution. Films produced at 100°C are much thinner and are electrically conductive due to fissures and pores in their microstructure. Initial studies on the effect of current density indicate the formation of thinner and porous films with thicker titanium oxide intermediate layers.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Microstructure and High-Temperature Mechanical Behavior of Alumina/Alumina–Yttria-Stabilized Tetragonal Zirconia Multilayer Composites

Layered composites of alternate layers of pure Al₂O₃(thickness of 125 μ m) and 85 vol% Al₂O₃-15 vol% ZrO₂ that was stabilized with 3 mol% Y₂O₃(thickness of 400 μ m) were obtained by sequential slip casting and then fired at either 1550° or 1700°C. Constant-strain-rate tests were conducted on these materials in air at 1400°C at an initial strain rate of 2 × 10^-5 s^-1. The load axis was applied both parallel and perpendicular to the layer interfaces. Catastrophic failure occurred for the composite that was fired at 1700°C, because of the coalescence of cavities that had developed in grain boundaries of the Al₂O₃ layers. In comparison, the composite that was fired at 1550°C demonstrated the ductility of the Al₂O₃+YTZP layer, but at a flow stress level that was determined by the Al₂O₃ layer.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

Alumina Dissolution into Silicate Slag

Dissolution of commercial white fused and tabular Al₂O₃ grains into a model silicate slag was investigated after 1 h at 1450° and 1600°C. Formation of CA₆ and hercynitic spinel layers was observed at all Al₂O₃/slag interfaces. The spinel layer was not always continuous, and so, compared with the CA₆ layer, it had a less-significant effect on the dissolution process. The CA₆ layer that formed adjacent to the tabular Al₂O₃ was incomplete at both temperatures, so that its dissolution was not a totally indirect process. These incomplete CA₆ and spinel layers meant that slag penetrated into the tabular Al₂O₃ grains, which, thus, were corroded and disintegrated by the penetrating slag. There was evidence of liquid in the CA₆ layer adjacent to the fused Al₂O₃ after 1 h at 1450°C, which also enabled direct dissolution. After 1 h at 1600°C, fused Al₂O₃ revealed a thick (∼60 μm), continuous and unpene-trated CA₆ layer, indicating fully indirect dissolution at this temperature.     

Structure Evolution in Hydrothermally Processed (<100°C) BaTiO3 Films

Thin films of cubic BaTiO₃ were processed hydrothermally at 40°–80°C by reacting thin layers of titanium organo metallic liquid precursors in aqueous solutions of either Ba(OH)₂ or a mixture of NaOH and BaCl₂. All films (thickness ∼1 μm) were polycrystalline with grain sizes ranging from nano- to micrometer dimensions. BaTiO₃ formation was facilitated by increasing [OH^-], [Ba²⁺], and the temperature. The film structure was related to the nucleation and growth behavior of the BaTiO₃ particles. Films processed at relatively low [OH^-], [Ba²⁺], and temperatures were coarse grain and opaque, but increasing [OH^-], [Ba²⁺], and temperature caused the grain size to decrease, resulting in transparent films.     

Fabrication of Long Lengths of Epitaxial Buffer Layers on Biaxially Textured Nickel Substrates Using a Continuous Reel-to-Reel Dip-Coating Unit

A low-cost, nonvacuum, solution precursor route has been developed to produce epitaxial oxide buffer layers of Eu₂O₃ or La₂Zr₂O₇ on biaxially textured Ni (100) tapes. A reel-to-reel continuous dip-coating unit consisting of a constant-tension tape transport system attached to a controlled atmosphere furnace was fabricated. Nickel tapes were pulled through a 2-methoxyethanol solution of europium methoxyethoxide/acetate or lanthanum zirconium methoxyethoxide. The double-sided dip-coated tapes were then annealed in a preheated furnace at 1000°–1100°C with a high flow rate of Ar/H₂ (4%) gas. The dip-coated buffers were dense, continuous, crack-free, and epitaxial with a single cube texture. A critical current ( J _c) of >1 MA/cm² at 77 K and self-field was obtained for YBa₂Cu₃O_7-δ (YBCO) films with a layer sequence of YBCO ( ex situ BaF₂ process)/CeO₂ (sputtered)/YSZ (sputtered)/Eu₂O₃ (dip-coated)/nickel. We have produced 1–2 m lengths of epitaxial buffer layers on textured nickel substrates using a nonvacuum process for the first time.