Enhancement of the current efficiency of organic light-emitting devices due to the surface plasmonic resonance effect of dodecanethilol-functionalized Au nanoparticles

The photoluminescence intensity of the dodecanethilol-functionalized Au (DDT-Au) nanoparticle (NP) layer/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC)/4,4′-bis(N-carbazolyl)-1,1′-biphenyl:tris(2-phenylpyridine)iridium (III) (CPB:Ir(ppy)₃) film was increased by about 1.15 times compared to that of the TAPC/CPB:Ir(ppy)₃ film due to the effect of coupling between the excitons in the emitting layer and a localized surface plasmonic resonance (LSPR) in the DDT-Au NPs. The current efficiency of the organic light-emitting devices (OLEDs) with the DDT-Au NP layer at 100 cd/m² was 14.9 cd/A larger than that without the DDT-Au NP layer, resulting in an enhancement of the out-coupling efficiency. The increase in the current efficiency of the OLEDs with a DDT-Au NP layer was attributed to the enhanced out-coupling efficiency due to the existence of the LSPR generated by the DDT-Au NPs.     

发光性能稳定的磷光与荧光复合型白光OLED

使用荧光染料TBPe和Ir(ppy)_2acac 、R-4B两种光染料,采用蓝/红绿双发光层的结构,并结合TPBi对空穴的有效限制作用 ,制备了结构为ITO/MoO₃(X nm)/ADN:(2%)TBPe(30 nm)/CBP:Ir(ppy)_2acac(14%):R-4B(2%)(5nm)/TPBi(10 nm)/Alq₃(30nm)/LiF(1nm )/Al(100nm)的磷光与荧光复合的白光OLED,其中,MoO₃的厚 分别为0、15、20、30和40nm,通过改变MoO₃的厚度调控载流子的注入能力,使用空穴阻挡层提高光效; 通过测量其电压、电流、亮度、色坐标和电致发光(EL)光谱等参数,研究不同厚度的MoO ₃对器件发光性能的影响。结果表明,在MoO₃厚为20nm的情况下,器件的效率滚降 最为平缓。在电压分别 为8、9、10、11、12和13V时,器件的色坐标分别为 (0.31,0.33)、(0.30,0.33)、(0.29,0.33)、(0.29,0.33)、(0.29,0.33)和(0.29, 0.33),具有较高的稳定性,原因为采用 蓝/红绿双发光层结构更有利于蓝光的 出射,且使用ADN主体材料掺杂蓝色荧光染料TBPe作为蓝光发光层降低三重态-三重态 湮灭几率。 研究还发现,在电压为11V、器件的亮度为9744cd/m²和电流密度为11.50mA/cm²时,最大器件的电流效率为 7.0cd/A。     

功能层界面制备方法对OLED性能的影响

在功能层界面处采用各功能材料共蒸的方法,制备了典型的绿光有机发光器件(OLED)。器件的结构为ITO/NPB(37nm)/(NPB:Alq3)(3nm)/Alq3(27nm):C545T(3%)/Alq3(20nm)/LiF(1nm)/Al(100nm),并与传统的制备方法进行了比较。结果发现,起亮电压从4.5V降低到2.5V,最高耐压从16V提高到21V,最大亮度从13 940cd/m2提高到24 630cd/m2,发光效率由7.0cd/A提高到11.4cd/A。结果表明,本文方法有利于载流子传输,可以有效提高激子形成概率,提高了OLED发光效率。     

Role of hole injection layer in intermediate connector of tandem organic light-emitting devices

In this work, we demonstrate three kinds of intermediate connectors (ICs) having a general configuration of “LiNH₂-doped 4,7-diphenyl-1,10-phenanthroline (BPhen)/hole injection layer (HIL)/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB)”, in which the HIL is 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), MoO₃ or MoO₃-doped NPB, respectively. Tandem organic light-emitting devices (OLEDs), vertically stacking two electroluminescence units, are fabricated using these intermediate connectors in between. The results show that, higher power efficiency is achievable in the cases of utilizing HAT-CN and MoO₃-doped NPB as HILs in the intermediate connectors versus MoO₃, whereas higher current efficiency can be obtained in the cases of using MoO₃ and MoO₃-doped NPB versus HAT-CN. We use the current density–voltage and low frequency differential capacitance–voltage measurements and find that the HILs primarily influence the voltage drop and the charge generation capability of intermediate connectors. The correlation between the effectiveness of intermediate connectors and the performances of tandem OLEDs is established, which can shed light on choosing suitable component materials to optimize the intermediate connectors.     

MoO3 as a cathode buffer layer for enhancing the efficiency in white organic light-emitting diodes

Molybdenum trioxide(MoO 3)as a cathode buffer layer is inserted between LiF and Al to improve the efficiency of white organic light-emitting diodes(OLEDs)in this paper.By changing the MoO 3 thickness,a higher current efficiency of 5.79 cd/A is obtained at a current density of 160 mA/cm2 for the device with a 0.8 nm-thick MoO 3 layer as the cathode buffer layer,which is approximately two times greater than that of the device without MoO 3.The mechanism for improving the device efficiency is discussed.Moreover,at a voltage of 13 V,the device with a 0.8 nm-thick MoO 3 layer achieves a higher luminance of 22370 cd/m2,and the Commission Internationale de I,Eclairage(CIE)color coordinate of the device with 1 nm-thick MoO 3 layer is(0.33,0.34),which shows the best color purity.Simple electron-only devices are tested to confirm the impact of the MoO 3 layer on the carrier injection.     

无氧溅射方法制备OLED的ITO透明电极

采用氧化铟锡(ITO)合金材料作为靶材,通过射频磁控溅射制备ITO膜.将获得的ITO膜应用于结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(100 nm)的有机电致发光器件(OLED),得到了最大亮度为11560 cd/m2(电压为25V)、最大效率为2.52 cd/A(电压为14 V)的结果.为了获得双面发光,制作了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(20 nm)/ITO(50 nm)的器件,其阳极出光的最大亮度为14460 cd/m2(电压为18V)、最大效率为2.16 cd/A(电压为12V),阴极出光的最大亮度为1 263 cd/m2(电压为19 V)、最大效率为0.26 cd/A(电压为16V).     

Efficient nondoped organic light-emitting diodes with Cu complex emitter

In Cu^I complex based organic light emitting diodes (OLEDs) a host matrix is traditionally thought to be required to achieve high efficiency. Herein, it is found that the device ITO/MoO₃ (1 nm)/4,4′-N,N′-dicarbazole-biphenyl (CBP, 35 nm)/[Cu(μ-I)dppb]₂ (dppb = 1,2-bis[diphenylphosphino]benzene, 20 nm)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi, 65 nm)/LiF (1 nm)/Al (100 nm) with a vacuum thermal evaporated nondoped Cu^I complex emissive layer (EML) showed external quantum efficiency and current efficiency of 8.0% and 24.3 cd/A at a brightness of 100 cd/m², respectively, which are comparable to the maximum efficiencies reported in an optimized doped OLED with the same emitter, higher efficiency than the OLED with a [Cu(μ-I)dppb]₂:CBP EML, and much higher efficiencies than the nondoped OLED with a bis(2-phenylpyridine)(acetylacetonate)iridium [Ir(ppy)₂(acac)] EML. A series of reference films and single carrier devices were fabricated and studied to understand the difference between Cu^I and Ir^III complex based nondoped OLEDs.     

基于FHQZn发光的新结构有机黄光器件

利用一种新型材料(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinolato-Zinc(FHQZn)制备了一种新结构的黄光OLED,器件的结构为:indium-tinoxide(ITO)/4,4′,4″-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine(2T-NATA)(15nm)/FHQZn(xnm)/4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl(DPVBi)(20nm)/2,2′,2″-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole-(TPBi):6%factris(2-phenylpyridine)iridium(Ir(ppy)3)(45nm)/LiF(0.5nm)/Al,FHQZn作空穴传输层和黄色发光层,DPVBi作空穴阻挡层,TPBi中掺杂Ir(ppy)3作电子传输层;研究了发光层FHQZn的厚度对该器件的发光性能的影响。当FHQZn厚度x=25时,得到了效率和亮度最大的黄光器件,最大电流效率为1.31cd/A(at13V),最大亮度为5705cd/m2(at14V),此时色坐标为(0.4,0.5516)。     

MgF2缓冲层对蓝光OLED性能的影响

为了提高蓝光有机电致发光器件(OLED)的发光性能,将MgF2缓冲层插入ITO阳极与空穴传输层NPB之间,通过优化MgF2的厚度,制备了结构为ITO/MgF2(x nm)/NPB(50nm)/DPVBi:DSA-ph(30nm)/Alq3(30nm)/LiF(0.6nm)/Al(100nm)的高性能蓝光器件。实验结果表明,MgF2厚为1.0nm时,器件性能最佳,对应的器件最大电流效率达到5.51cd/A,最大亮度为23 290cd/m2(10.5V),与没有MgF2缓冲层的标准器件相比,分别提高47.3%和25.2%。对ITO表面的功函数测量结果表明,MgF2缓冲层可以有效修饰ITO表面,降低ITO与NPB之间的势垒高度差,改善空穴的注入效率,从而导致电子和空穴的注入更加平衡,激发机制更高效,实现了高性能的蓝光发射,为实现高效而稳定的全彩显示和白光照明奠定了基础。     

新型双空穴注入型高效有机电致发光二极管

采用一种新型有机电致发光二极管（OLED）的阳极结构,在玻璃衬底上以半透明的A1膜为出光面,通过在空穴注入层（HIL）和空穴传输层（HTL）中间插入MoOa层,制备了底发射OLED。制备的器件结构为Glass／Al（15nm）／HAT—CN（IOnm）／M003（30nm）／NPB（30nm）／Alq3（60nm）／B...     

MoO3修饰氧化石墨烯作为空穴注入层影响研究

研究了MoO₃修饰氧化石墨烯(GO)作为空穴注入层的影响。采用旋涂的方法制备了GO, 再真空蒸镀修饰层MoO₃,得到了空穴注入能力强和透过率高的复合薄膜。MoO₃的厚分 别采用0、3、5和8nm。通过优化MoO₃的厚度发现,当MoO₃的厚为5nm时,复合薄膜 的透过率达到最大值,在 550nm的光波长下透光率为88%,且此时采用 复合薄膜作为空穴注入层制备的结构为 ITO/GO/MoO₃(5nm)/NPB(40nm)/Alq₃(40nm)/LiF(1nm)/Al(100nm)的有机电致发光器件(OLED)性能 最佳。通过对OLED进一步的优化,改变Alq₃的厚度,分别取50、60和70nm,测量其电压 、电流、亮度、色坐标和电致发光(EL)光谱等参数发现,当Alq₃的厚为50nm时器件性能最 佳。最终制备了结构为ITO/GO/MoO₃(5nm)/NPB(50nm)/Alq₃(50nm)/LiF(1nm)/Al(100 nm)的OLED,在电压为10V时,最大电流效率达到5.87cd/A,与GO单独作为空穴注入层制备的器件相比,提高了50%。     

白光有机电致发光器件发光稳定性研究

基于红绿/蓝双发光层,制作了结构为ITO/MoO ₃(10nm)/NPB(40nm)/TCTA(10nm)/CBP:R-4B(2%):GIR1(14%,X nm)/mCP:Firpic(8%,Y nm/BCP(10nm)/Alq₃(40nm)/LiF(1nm)/Al( 100nm)的白色全磷光有机电致发光器件(OLED),通过 调节红绿发光层的厚度X与蓝光发光层的厚度Y,研究了不同发光层厚度器件发 光性能的影响。研究发现:当X 为23nm、Y为7nm时,器件的光效和色坐标都具有 很高的稳定性,在电压分别为5、 10和15V时,色坐标分别为(0.33,0.37)、(0.33,0. 37)和(0.34,0.38);在电压为 5V时,电流密度为0.674mA,亮度为158.7cd ,最大电流效率为26.87cd/A;利用电子阻 挡材料TCTA和空穴阻挡材料BCP能够显著提高载流子的复合效率。分析认为:发光层顺序 为红绿/蓝时,更有利于蓝光的出射,从而使白光的色坐标更稳定。     

蓝绿色磷光OLED的制备及发光性能研究

以mCP为主体发光材料,蓝绿色磷光染料BGIr1作 为掺杂剂,制备了6种不同BGIr1掺杂量的蓝绿色磷光有机电致发光器件(OLED),研究了不 同掺杂量对蓝绿色磷光OLED器件发光特性的影 响。制得器件的结构为ITO/MoO₃(20nm)/NPB(40nm)/mCP:BGIr1(x%,30nm)/BCP(10nm)/Alq₃(20 nm)/LiF/Al(100nm),其中x%为发光层中磷光染料BGIr1的掺杂量(质量分数)。结果表明,BGIr1掺杂量 为18%时,获得器件的发光性能最佳。18% BGIr 1掺杂器件在488nm和 512nm处获得两个主发射峰,当电 流密度为26.5mA/cm²时,获得最大发光效率为6.2cd/A;在15V驱动电压下,获得最大亮度为6970cd/cm², CIE坐标为(0.17,0.31)。这说明,BGI r1掺杂改善了器件的发光亮度和色纯度,提高了器件的发光效率。     

一种新型蓝色有机电致发光器件及其发光机理

利用5,6,11,12-tetraphenylnaphthacene(Rubrene)超薄层制备了一种蓝光有机电致发光器件(OLED),器件结构为ITO/N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,18-biphenyl)-4,4'-diamine(NPB)(50nm)/2,9-d...     

Influence of connecting units’ thicknesses on tandem organic devices’ performances

The present work investigates the influence of the Alq₃:Mg and MoO₃ thicknesses in the connecting unit on the performance of tandem organic light-emitting devices (OLEDs). By systematically varying the Alq₃:Mg and MoO₃ thicknesses, we obtained a higher current efficiency of 37.3 cd/A for a device with 30 nm Alq₃:Mg and 3 nm MoO₃ layer as connecting units. The optimal device performance is enhanced by at least 14%, compared with those of devices we fabricated in this paper. It suggests that appropriate Alq₃:Mg and MoO₃ thicknesses can enhance the charge generating ability for connecting units. On the other hand, it was found that the charge transporting layer would decrease strongly because of much thicker or thinner MoO₃ thicknesses. The results demonstrate that it is an effective method to improve the performance of OLEDs by using a optimal thickness for Alq₃:Mg and MoO₃ layers.     

Molybdenum oxide anode buffer layers for solution processed,blue phosphorescent small molecule organic light emitting diodes

In this work we present solution processed organic light emitting diodes (OLEDs) comprising small molecule, blue phosphorescent emitter layers from bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium doped 4,4′,4″-tris(carbazol-9-yl)-triphenylamine and molybdenum trioxide (MoO₃) anode buffer layers. The latter were applied from a molybdenium(V)ethoxide precursor solution that was thermally converted to MoO₃ at moderate temperatures. The high work function MoO₃ facilitated hole injection into the emission layer. The MoO₃ layer properties were investigated by means of energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and Kelvin probe force microscopy. MoO₃ buffer layers performed superior to the commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and enabled an enhanced OLED device efficiency.     

Solution-processed aqueous composite hole injection layer of PEDOT:PSS+MoOx for efficient ultraviolet organic light-emitting diode

Hole injection layer (HIL) plays a crucial role in governing external quantum efficiency (EQE) of ultraviolet organic light-emitting diodes (UV OLEDs). We develop a solution-processed aqueous composite HIL of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) incorporated MoO_x (PEDOT:PSS+MoO_x) and cast successful application to UV OLEDs. PEDOT:PSS+MoO_x is characterized in detail with scanning electron microscopy, atomic force microscopy, UV–visible absorption spectra, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and impedance spectroscopy measurements. The results show that PEDOT:PSS+MoO_x features superior film morphology and exceptional electronic properties such as enhanced surface work function and promoted hole injection capacity. With PEDOT:PSS+MoO_x as HIL, the UV OLED gives maximum EQE of 4.4% and radiance of 12.2 mW/cm² as well as improved durability. The electroluminescence peaks at 376 nm with full width at half maximum of 34 nm and stable voltage-dependent spectra. Our results pave a way for exploring efficient UV OLEDs with solution-processable techniques.     

基于DPV的高效率蓝光有机电致发光器件

制备了基于荧光染料2-diphenylamino-7-(2,2 diphenylvinyl)-9,9'-spriobifluoreme(DPV)的高效率蓝光有机电致发光器件(OLED).器件的结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/DPV(d nm)/BCP(10 nm)/Alq3(30 n...     

磷光与荧光相结合的有机白光器件

首先制备了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/CBP:FIrPIC(10%,30 nm)/5,6,11,12-tetraphenylnaphthacene(rubrene)(x nm/Bphen(40 nm)/LiF(0.8 nm)/Al的器件.此器件效率降低,为提高效率,我们又制备了另一器件,其结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10%,30 nm)/Bphen(40 nm)/LiF(0.8 nm)/Al.此器件亮度效率及色坐标均有所改善.此器件的最大亮度为14 V时,10050 cd/m2,最大效率为8V时,4.59(cd/A),7 V时,1.89(lm/w).1000 cd/m2时的效率约为4.00 cd/A(10 V时,1.25 lm/w).当亮度由1354 cd/m2变到10050cd/m2时,色坐标由(0.33,0.37)变到(0.34,0.37).     

Effect of Al:Ag alloy cathode on the performance of transparent organic light-emitting devices

Transparent organic light-emitting devices (TOLEDs) based on a stacked alloy cathode of LiF/Al:Ag are investigated. The devices have a structure of indium-tin-oxide (ITO)/4,4′,4′′-Tris[2-naphthyl(phenyl)amino]triphenylamine (2T-NATA) (25 nm)/N,N''-Di-[(1-naphthyl)-N,N''-diphenyl]-1,1''-biphenyl-4,4''-diamine (NPB) (40 nm)/tris-(8-hydroxyquinoline) aluminum (Alq3) (50 nm)/LiF (1 nm)/Al:Ag (1:3) (x), where the thicknesses of cathode metal layers (Al:Ag) are adjusted, respectively, from 70 nm to 100 nm. In the experiment, it is found that the LiF (1 nm)/Al:Ag (1:3) (75 nm) has good electron injection efficiency. Compared with an Al-only cathode, the turn-on voltage is lowered. At the voltage of 10 V, the luminances for bottom emission from ITO anode side and top emission from metal cathode side are 2 459 cd/m2 and 1 729 cd/m2, respectively. Thanks to electron injection enhancement by using Al:Ag cathode, we can obtain a better energy level matching between the cathode and the organic layer, thus the devices have lower turn-on voltage and higher luminance. The total transmittance of the devices can achieve about 40% at the wavelength of 550 nm.