共查询到5条相似文献，搜索用时 0 毫秒
1.
Zhang Xiumiao 《电子科学学刊(英文版)》1992,9(3):265-269
When a linear voltage ramp is applied to the gate of a MOS capacitor, a capacitancetime (C-t) transient is observed. The MOS capacitor is biased into strong inversion before applying the voltage ramp in order to eliminate surface generation. FromC-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted fromC-t curves under varying voltage sweep rates are close each other, and they are consistent with the lifetimes extracted by saturation capacitance method. 相似文献
2.
本文建议用耗尽的线性扫描电压扫描MOS电容样品。扫描开始前MOS电容被置于强反型态,以消除表面产生的影响。根据扫描所得的电容-时间瞬态曲线,可确定样品中少于产生寿命。实验表明,对于同一个MOS电容样品,不同电压扫描率下得到的结果有很好的一致性,且与饱和电容法的结果相符合。 相似文献
3.
研究了深能级中心电场增强载流子产生现象，得到的产生电流与产生宽度的理论关系，能较好地与实验结果相符合。 相似文献
4.
本文介绍一种简便实用的测量少数载淳子寿命的新方法－ＭＯＳ电容测量法，它对测量样品的要求不高，可在生产过程中实时测量，测量方法、数据处理及测量设备均较简便。 相似文献
5.
A comparison between two linear sweep techniques for generation lifetime profiling is reviewed here. These semiconductor characterization techniques find widespread application because of their availability in commercial equipment and ability to reduce the measurement time. It is shown experimentally that parameters such as generation lifetime and surface generation velocity determined by linear sweep techniques agree well with those obtained from pulsed MOS capacitor measurement. 相似文献