渗硅碳化硅材料的研究

本文通过调整生坯结构,研究了全碳粉渗硅碳化硅（PCRBSC0的显微结构及力学性能。实验结果表明：生坯结构影响烧结体显微结构,同时显微结构、游离硅含量影响材料力学性能,渗硅碳化硅（PCRBSC0材料中随游离硅含量的增加,其抗折强度下降,并且二者呈直线关系,符合线性复合规则：P＝∑i=1^nPiVi。     

高温处理对渗硅碳化硅性能的影响

研究了全碳粉反应渗硅碳化硅（PCRBSC）材料在1700℃高温氩气氛中4h的处理,研究结果表明,RCPBSC材料的结构对高温处理后的强度有很大的影响,特别是游离硅sfi,游离碳fc的含量明显影响高温处理后PCRBSC材料的抗折强度。     

高温处理对渗硅碳化硅性能的影响

研究了全碳粉反应渗硅碳化硅（ＰＣＲＢＳＣ）材料在１７００℃高温氩气氛中４ｈ的处理,研究结果表明：ＰＣＲＢＳＣ材料的结构对高温处理后的强度有很大的影响,特别是游离硅ｆｓｉ、游离碳ｆｃ的含量明显影响高温处理后ＰＣＲＢＳＣ材料的抗折强度。     

渗硅碳化硅材料结构与性能关系的研究

采用低廉石油焦碳分为原料制造全碳粉生坯，通过有机添加剂来调配生坯中碳的比例，以控制烧结体中游离硅（fsi）、游离碳（fC）含量（其中fs,fc为烧结中未反应的硅和碳），研究了全碳粉反应硅碳化硅（PCRSC）材料的结构与力学性能的关系，分析了渗硅碳化硅材料中游离硅、游了碳含量对抗弯强度的影响。结果表明：渗硅碳化硅材料中随游离硅含量的增加，其抗弯速度下降，并且二者呈直线关系，符合线性复合规则，另一方面，游离碳含量较高的渗硅碳化硅材料，尽管游离硅含量低，但其抗弯强度低于等量或较多游了硅含量的渗硅碳化硅材料的抗弯强度。     

碳化硅材料中游离硅及游离碳对性能的影响

研究了全碳粉反应渗硅碳化硅（PCRBSC）材料的结构与力学性能的关系。分析了渗硅碳化硅材料中游离硅（fsi),游离碳（fc)含量对抗折强度的影响。结果表明：参硅碳化硅材料中随游离硅（fsi)含量的增加,其抗折强度下降,并且二者呈直线关系,符合线性复合规划,另一方面,游离碳（fc)含量较高的渗硅碳化硅材料,尽管游离硅（fsi)含量低,但其抗折强度低于等量或较多游离硅（fsi)含量的渗硅碳化硅材料的抗折强度。     

不定形耐火材料中碳和SiC的高温氧化性状

1.前言 在耐火材料中含碳和SiC等的材质很多。根据添加具有优良性能的碳和SiC,开发了只用氧化物无法实现的高热震稳定性和高耐渣性的碳砖和SiC-C质砖。最近,在不定形耐火材料中含有大量SiC和碳的浇注料也相继使用。不过,若添加大量的SiC和碳,虽然能改善热震稳定性等,但高温氧化气氛下的氧化损毁则     

Si—SiC复合材料的高温氧化行为

本文研究了高纯Ｓｉ－ＳｉＣ复合材料（克分子比为４０／６０）在１６００Ｋ温度下,于Ａｒ－Ｏ２（Ｐｏ２：０．０２￣９７ｋＰａ）气氛中,保温１５小时反应期间的氧化行为,从而评价其抗氧化性能。使用四极质谱,通过测量氧化期间ＣＯ和Ｃ琪 氧化速率。氧化动力学在高氧分压（９７ｋＰａ）下是遵循直线－抛物规律,在低氧发压（０．０２ｋＰａ）下是遵循线性规律布景 。关一种情况重量在增加,而后一种情况重量在减少。并测定了     

用质量分析仪测定硅烟在加热气氛下产生的气体

用质量分析仪对５种硅烟的高温物理性能进行了研究试验,结果弄清：硅烟中含有氧化后能产生ＣＯ和ＣＯ２气体的游离碳;硅烟能有效降低碳化硅在高温下的氧化速度。     

渗铝Q235钢的渗层组织和抗高温氧化性能

分析了Q2 3 5钢热浸渗铝和铝硅合金层的显微组织 ,并对其抗高温氧化性能进行了研究。热浸渗层由镀层 (表层 )和化合物层 (内层 )两层组成 ,金相和X射线能谱分析 (EDS)结果表明纯铝渗层的化合物层呈厚齿状 ,由η相 (Fe2 Al5)组成 ;铝硅合金渗层的化合物层呈薄带状 ,由Si合金化的η相即Fe2 (Al Si) 5组成。热浸渗层经扩散退火后 ,表面镀层消失 ,渗层由表及里依次出现 η相、ζ相、β2 相、β1相和固溶体α相等过渡组织。 80 0℃高温氧化试验结果表明 ,渗纯铝Q2 3 5钢的抗高温氧化性能优于 1Cr1 8Ni9Ti不锈钢 ,硅的加入可以改善热浸工艺性能 ,但降低了渗层的抗高温氧化性能。     

反应结合SiC电热材料的高温氧化特征

研究了反应结合SiC电热材料在1100～1580℃空气介质中加热时的氧化特征。结果表明：加热温度高于1420℃后，材料基体中的残留Si熔化并流动到表面形成SiO2。氧化后形成的SiO2与表面氧化层融为一体，提高了表面氧化层的致密度，有利于材料的抗氧化性能。1500℃左右为材料的抗氧化性能转折温度。在1500℃以下氧化时，反应结合SiC的抗氧化行为与重结晶SiC接近；高于1500℃氧化时，材料表面发生破坏性氧化，引起电热材料的失效。1500℃氧化后的表面氧化层中同时存在低温石英、方石英和非晶态SiO2。     

Microstructure and Oxidation Behavior of Silicon Carbide Fibers Derived from Polycarbosilane

Polycarbosilane-derived SiC fibers (CG Nicalon, Hi-Nicalon, and Hi-Nicalon type S) were exposed for 1–100 h at 1273–1673 K in air. Oxide layer growth and changes in tensile strength for these fibers were examined after exposure. The three types of SiC fibers decreased in strength as the oxide layer thickness increased. Fracture origins were located near the oxide layer–fiber interface. The Hi-Nicalon type S showed better oxidation resistance than the other polycarbosilane-derived SiC fibers after exposure in air at 1673 K for 10 h. This result was attributed to the nature of the silicon oxide layer on the surface of the SiC fibers.     

Observations of Accelerated Silicon Carbide Recession by Oxidation at High Water-Vapor Pressures

A study of the exposure of SiC at 1200°C and high water-vapor pressures (1.5 atm) has shown SiC recession rates that exceed what is predicted based on parabolic oxidation at water-vapor pressures of less than or equal to ∼1 atm. After exposure to these conditions, distinct silica-scale structures are observed; thick, porous, nonprotective cristobalite scales form above a thin, dense silica layer. The porous cristobalite thickens with exposure time, while the thickness of the underlying dense layer remains constant. These observations suggest a moving-boundary phenomenon that is controlled by the rapid conversion of dense vitreous silica to a porous, nonprotective crystalline SiO₂.     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

纳米碳颗粒/碳化硅陶瓷基复合材料的氧化行为

以微米硅(Si)和纳米碳黑(Cp)粉体为主要原料,采用经机械化学法合成的碳化硅(SiC)和15%和25%的纳米碳颗粒与碳化硅(Cp-SiC)的复合粉体,并经无压烧结得到了Cp/SiC陶瓷基复合材料,分析了在不同温度条件下Cp/SiC烧结体的氧化行为。结果表明:当温度小于700℃时,Cp/SiC复合陶瓷在空气中的氧化受C—O2反应控制,致使其为均匀氧化;700℃时,氧化后的复合材料显气孔率最大,弯曲强度达极小值;大于700℃,氧化过程受O2的气相扩散控制,呈非均匀氧化;700~900℃之间,O2通过微裂纹的扩散控制着Cp/SiC的氧化过程;900~1 100℃之间,O2通过SiC缺陷的扩散控制着Cp/SiC的氧化过程,并在1 000℃时的最初的2 h内,复合材料弯曲强度增大,且达到了极大值。同时表明,纳米碳含量是影响复合材料强度及氧化行为的关键因素,添加纳米碳质量分数为15%的Cp/SiC复合陶瓷可以作为一种抗氧化性能优良的玻璃夹具材料。     

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Effects of High Water-Vapor Pressure on Oxidation of Silicon Carbide at 1200°C

The oxidation of SiC at 1200°C in a slowly flowing gas mixture of either air or air + 15 vol% H₂O at 10 atm (1 MPa) was studied for extended times to examine the effects of elevated water-vapor pressure on oxidation rates and microstructural development. At a water-vapor pressure of 1.5 atm (150 kPa), distinct SiO₂ scale structures were observed on the SiC; thick, porous, nonprotective cristobalite scales formed above a thin, nearly dense vitreous SiO₂ layer, which remained constant in thickness with time as the crystalline SiO₂ continued to grow. The pore morphology of the cristobalite layer differed depending on the type of SiC on which it was grown. The crystallization and growth rates of the cristobalite layer were significantly accelerated in the presence of the high water-vapor pressure and resulted in rapid rates of SiC surface recession that were on the order of what is observed when SiO₂ volatility is rate controlling at high gas-flow velocities (30 m/s). The recession process can be described by a paralinear kinetic model controlled by the conversion of dense vitreous SiO₂ to porous, nonprotective SiO₂.     

Oxidation Resistance of Multiwalled Carbon Nanotubes Coated with Silicon Carbide

Multiwalled carbon nanotubes (MWCNTs) were coated with a SiC layer using SiO vapor. The growth mechanism of SiC and the oxidation resistance of the SiC-coated MWCNTs were studied. The growth of the SiC layer was controlled by adjusting the partial pressure of CO₂ using carbon felt placed in a crucible. The nanometer-sized SiC particles were deposited onto the tubes by the reaction between SiO( g ) and CO( g ). On the other hand, the thin surface of the MWCNTs was converted to the SiC layer when the carbon felt was not used. The oxidation durability of MWCNTs was improved by the SiC coating. MWCNTs were oxidized completely in air at 650°C for 60 min. However, about 90 mass% of the SiC-coated MWCNTs remained after the same oxidation test.     

Suppression of Active Oxidation of Polycarbosilane-Derived Silicon Carbide Fibers by Preoxidation at High Oxygen Pressure

Three types of polycarbosilane-derived SiC fibers (Nicalon, Hi-Nicalon, and Hi-Nicalon S) with different SiO₂ film thicknesses ( b ) were subjected to exposure tests at 1773 K in an argon-oxygen gas mixture with an oxygen partial pressure of 1 Pa. The suppression effect of a SiO₂ coating on active oxidation was examined through TG, XRD analysis, SEM observation, and tensile tests. All the as-received fibers were oxidized in the active-oxidation regime. The mass gain and the SiO₂ film development showed a suppression of active oxidation at b values of ≧0.070 μm for Nicalon, ≧0.013 μm for Hi-Nicalon, and ≧0.010 μm for Hi-Nicalon S fibers. Considerable strength was retained in the SiO₂-coated fibers. For Hi-Nicalon fibers, the retained strength was 71%–90% of the strength in the as-received state (2.14–2.69 GPa).     

Mullite Coating on Recrytallized Silicon Carbide and Its Cycling Oxidation Behavior

1IntroductionThere are strong interests in identifying approa-ches to protect silicon carbide ceramics from high tem-perature oxidative environments and prolong their serv-ice lives.One method is to apply a refractory coating.The advantage of coating tech…