网络诱骗技术

作为一种新兴的主动防御技术,网络诱骗技术是对传统网络防御手段的有效补充,通过将网络攻击引向伪造的、虚假的信息资源,达到保护网络中真正有价值信息资源的目的.首先阐述了网络诱骗的基本原理和基本要求,并在此基础上介绍了四种实用的网络诱骗技术.     

论网络诱骗技术

作为一种新兴的主动防御技术，网络诱骗技术是对传统网络防御手段的有效补充，通过将网络攻击引向伪造的、虚假的信息资源，达到保护网络中真正有价值信息资源的目的。本文首先阐述了网络诱骗的基本原理和基本要求，并在此基础上介绍了四种实用的网络诱骗技术。     

蜜罐诱骗防御机理的博弈理论分析

论文运用博弈理论形式化描述了蜜罐诱骗中各博弈局中人的策略与收益,通过求解博弈均衡策略及均衡条件,分析推理了传统蜜罐在网络攻防博弈中的有效性和局限性,证明了蜜罐是一种被动式主动防御手段。讨论了符合防御者预期的理想诱骗博弈均衡策略,剖析了影响诱骗博弈有效性和主动性的要素条件,并受生物拟态现象启发,给出了提高诱骗主动性和有效性的策略建议,为构建主动有效的蜜罐诱骗防御手段提供了理论支持。     

网络诱骗的基本原理、要求及应用分析

对网络诱骗的基本原理和基本要求进行了阐述,列举了蜜罐主机、陷阱网络、诱导以及欺骗信息设计4种网络诱骗技术,并对应用最早、最多的蜜罐主机技术进行了分析。     

诱骗网络中管理控制系统的设计与实现

诱骗网络使防卫者可以在其中观察、了解入侵者,并发现网络的漏洞,从而达到保护实际网络的目的.作为诱骗网络面向应用、实用的一个方面,恰当的设计并实现一个管理控制系统是有益的.文中以第二代诱骗网络为基础,分析了其中各部分功能以及集中管理控制的可行性,给出了诱骗网络管理控制系统的设计方案,并在Linux环境下实现了该管理控制系统MagicNet.实验测试表明,系统实现了诱骗网络的基本管理控制功能.     

安全诱骗网络设计

论文分析了诱骗网络普遍存在的安全隐患的根源和危害,提出了解决方案,并在此基础上设计出一种基于内部安全机制的诱骗网络。该网络引入了内部安全防护模块,有效地应对了原有的安全漏洞,融合了传统诱骗手段,构筑了一个立体的主动防御体系,进一步保证了网络安全。     

入侵诱骗技术在网络安全中的应用研究

作为一种新兴的网络安全防御技术,入侵诱骗技术能够将攻击或入侵重定向到特定的诱骗系统中,在网络安全中起着主动防御的作用。本文通过对常见攻击方式的分析和研究,给出了入侵诱骗系统的一般体系结构模型,为当前网络发全建设提出合理化建议。     

拟态式蜜罐诱骗特性的博弈理论分析

该文基于非合作不完全信息动态博弈理论,形式化描述了拟态式蜜罐诱骗博弈的各局中人策略和收益,构建了诱骗博弈收益矩阵,推理分析了拟态式蜜罐诱骗博弈中存在的贝叶斯纳什均衡策略,通过进一步讨论博弈均衡条件和影响因素并与传统蜜罐博弈相比较,给出了拟态式蜜罐模型中保护色、警戒色等机制在诱骗博弈中的适用条件,证明了拟态式蜜罐模型具有更好的主动性、有效性和迷惑性.     

浅析网络安全中入侵诱骗技术Honeypot系统的应用

文章对入侵诱骗技术进行了简要的介绍,对Honeypot系统从分类、优缺点、设计原则、设计方法等方面进行了论述,并对设计的Honeypot系统进行了具体网络的应用。     

入侵诱骗模型的建立与应用

HoneyPot系统是入侵诱骗技术中的一种，在网络安全中起着主动防御的作用。本文在分析了它的实现方式技术基础上，形式化的定义了入侵诱骗系统，提出了入侵诱骗的体系结构，并给出了一个入侵诱骗系统的实现模型。     

Sand trap

When hundreds of engineers, inventors, robotics experts, computer scientists, garage monkeys, and students converge on the Mojave Desert for an off-road robotic race, anything can happen. DARPA'S 320-kilometer robotic race across the Mojave Desert yielded no winners, but plenty of new ideas.     

Characterization of oxide trap and interface trap creation duringhot-carrier stressing of n-MOS transistors using the floating-gatetechnique

A technique has been developed to differentiate between interface states and oxide trapped charges in conventional n-channel MOS transistors. The gate current is measured before and after stress damage using the floating-gate technique. It is shown that the change in the I_g-V_g characteristics following the creation and filling of oxide traps by low gate voltage stress shows distinct differences when compared to that which occurs for interface trap creation at mid gate voltage stress conditions, permitting the identification of hot-carrier damage through the I_g- V_g characteristics. The difference is explained in terms of the changes in occupancy of the created interface traps as a function of gate voltage during the I_g-V _g measurements     

Electro-optical trap for dipolar excitons

An electro-optical trap for spatially indirect dipolar excitons is implemented in a GaAs/AlAs Schottky diode with a 400-?-wide GaAs single quantum well. In the presence of bias voltage applied to the gate, the trap for excitons appears upon annular illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears due to screening of the applied electric field by nonequilibrium charge carriers within the excitation region. Excitons are collected inside the ring due to the ambipolar drift of carriers and the dipole-dipole repulsion of excitons in the optically pumped region. For dipolar excitons thus accumulated in the middle of the ring-shaped electro-optical trap, significant narrowing of the luminescence line is observed with increasing excitation density, which indicates the collective behavior of the excitons.     

基于MATLAB的单光阱光镊中光阱力的分析

在几何光学近似下,对米氏球状粒子所受轴向光阱力进行了数值计算。仿真结果给出了轴向稳定捕获区域和光阱力与光镊系统主要参数的关系。分析表明,激光束束腰半径越小,势阱越深;相对折射率、激光波长、功率等参数对光阱力也有一定影响。数值仿真为实验中参数的选择提供了依据。     

Kinetics of trapping,detrapping, and trap generation

The trapping and detrapping of charge in the oxides have been studied for two decades. While there has been a lot of progress in understanding the mechanisms responsible for charge trapping and detrapping in these oxides, it is still not fully understood. For example, even under low field injection conditions first order trapping kinetics do not accurately model the observed data. Under high field injection the situation is exacerbated by the generation of additional trapping sites during the injection process, which is also not completely understood. The paper presents a review of the kinetics of trapping and detrapping and describes various models that have been proposed to explain experimentally observed trapping-detrapping behavior.     

Avalanche breakdown and surface deep-level trap effects in GaAsMESFET's

Time-dependent numerical simulations have been performed to investigate avalanche breakdown and surface deep-level trapping effects in GaAs MESFETs. The model is based on a combination of bipolar drift-diffusion transport, impact ionization, and a dynamic surface charging mechanism. A realistic trapping process is introduced into the surface trap model from which the spatial distribution of surface charge density is determined. The basic breakdown mechanisms, gate-bias-dependent breakdown voltages, and effects of surface charges are demonstrated. It is shown that the surface deep-level traps have a pronounced effect on the breakdown phenomenon     

基于交换机集群网络的自陷收集方法的研究

文章介绍了现有的交换机网络管理技术和交换机集群技术的优点及其关键内容,并针对当前交换机网络管理的要求,提出了一种易于实现、配置简单方便,能够很好地帮助网络管理员实时监控集群网络中各设备的自陷(trap)信息的方法,并详细介绍了在交换机集群网络中如何收集和处理成员交换机上报的trap信息.     

激光陷阱对神经细胞生长方向的引导

提要神经系统的信息传递精确地依赖于轴突向其靶区组织的延伸。神经细胞生长锥沿一定路径生长,最后到达其正确的靶位。一般认为生长锥的生长可能被四种不同的机制所引导:接触吸引,化学吸引,接触排斥和化学排斥。与现存的方法不同,作者用特别设计的倒置式激光陷阱放在生长锥的前方来引导生长锥的生长方向。通过对生长锥施以持续的作用力,作者在实验上成功地引导了神经细胞生长锥的生长方向。控制神经生长一直是神经科学的基本目标,用激光陷阱引导神经生长可能会对神经回路的构建以及神经的再生起到非常重要的作用。