共查询到20条相似文献,搜索用时 15 毫秒
1.
J. A. Varriano M. W. Koch F. G. Johnson G. W. Wicks 《Journal of Electronic Materials》1992,21(2):195-198
We report on the use of a new, valved, solid phosphorus cracker source for the growth of phosphides by molecular beam epitaxy.
The source avoids the relatively high expense and high level of toxicity associated with the use of phosphine gas and eliminates
the problems commonly encountered in using conventional solid phosphorus sources. The source has been used to grow GaInP and
AlInP lattice-matched to GaAs substrates. The quality of the materials reported here is comparable to the best materials grown
by other techniques. Photoluminescence and Raman scattering measurements indicate that the resulting material has a high degree
of disorder on the group III sublattice. The new source is shown to be a reliable and attractive alternative for the growth
of these phosphide materials. 相似文献
2.
3.
报道了InAs/GaSb超晶格中波材料的分子束外廷生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配△a/a=1.5×10-4,原子级平整表面的InAs/GaSb超晶格材料,材料77 K截止波长为4.87 μm. 相似文献
4.
We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecularbeamepitaxy(MBE).The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction,with an interconnected GaAs tunnel junction.A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell,while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell,respectively.The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed.It is demonstrated that the MBE-grown phosphide-containing Ⅲ–V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency. 相似文献
5.
Based on our kinetics models for gas source molecular beam epitaxy of mixed group-V ternary materials, the group-V composition
control in InyGa1−yAs1−xPx epilayers has been studied. The P or As composition in InyGa1−yAs1−xPx (lattice matched to InP or GaAs) can be obtained from a simple equation for substrate temperatures below 500°C. This has
been verified by a series of experimental results. 相似文献
6.
Y. Kawamura A. Wakatsuki Y. Noguchi H. Iwamura 《Photonics Technology Letters, IEEE》1991,3(11):960-962
An InGaAs/InGaAlAs multiple-quantum-well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE). The laser has InP cladding layers and InGaAsP guiding layers, and the active layer is composed of an InGaAs/InGaAlAs MQW layer. Electrons are injected into the MQW active layer by tunneling through the barriers. The threshold current of the InGaAs/InAlAs buried-heterostructure (BH)-MQW lasers was as low as 9.6 mA. The relaxation oscillation frequency of the InGaAs/InAlAs MQW lasers was found to be larger than that of the InGaAs/InGaAsP MQW lasers with the same structure.<> 相似文献
7.
8.
Y. He J. Ramdani N. A. El-Masry D. C. Look S. M. Bedair 《Journal of Electronic Materials》1993,22(12):1481-1485
Low-temperature (LT) growth of In0.47Ga0.53P was carried out in the temperature range from 200 to 260°C by gas source molecular beam epitaxy using solid Ga and In and
precracked PH3. The Hall measurements of the as-grown film showed a resistivity of ∼106 Ω-cm at room temperature whereas the annealed film (at 600°C for 1 h) had at least three orders of magnitude higher resistivity.
The Hall measurements, also, indicated activation energies of ∼0.5 and 0.8 eV for the asgrown and annealed samples, respectively.
Double-crystal x-ray diffraction showed that the LT-InGaP films had ∼47% In composition. The angular separation, Δθ, between
the GaAs substrate and the as-grown LT-InGaP film on (004) reflection was increased by 20 arc-s after annealing. In order
to better understand the annealing effect, a LT-InGaP film was grown on an InGaP film grown at 480°C. While annealing did
not have any effect on the HT-InGaP peak position, the LT-InGaP peak was shifted toward the HT-InGaP peak, indicating a decrease
in the LT-InGaP lattice parameter. Cross-sectional transmission electron microscopy indicates the presence of phase separation
in LT-InGaP films, manifested in the form of a “precipitate-like” microstructure. The analytical scanning transmission electron
microscopy analysis of the LT-InGaP film revealed a group-V nonstoichiometric deviation of ∼0.5 at.% P. To our knowledge,
this is the first report about the growth and characterization of LT-InGaP films. 相似文献
9.
A. Matsumura J. M. Fernndez T. J. Thornton S. N. Holmes J. Zhang B. A. Joyce 《Solid-state electronics》1996,40(1-8):399-403
We have characterized two-dimensional electron gases (2DEGs) in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. Hall bar structures were fabricated to characterize the structures and magnetotransport measurements were carried out at temperatures down to 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of high quality 2DEG in the channel. Electron mobilities up to 87,000 cm2 V−1 s−1 with sheet densities about 7 × 1011 cm−2 were obtained at low temperature. Dingle plots of the magnetoresistance vs reciprocal magnetic field were utilized to determine the single-particle relaxation times in order to investigate scattering mechanisms in these structure. The ratio of the transport scattering time derived from electron mobility to the single-particle relaxation time is of the order of 10, indicating that remote impurity scattering is a dominant factor limiting the mobility of our structures. The behaviour of the magnetotransport data is discussed using a model for parallel conduction. 相似文献
10.
A highly strained GaAs/GaAs/sub 0.64/Sb/sub 0.36/ single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 /spl mu/m pulsed operation with a low threshold current density of 300 A/cm/sup 2/. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature. 相似文献
11.
K. Tappura J. Aarik M. Pessa 《Photonics Technology Letters, IEEE》1996,8(3):319-321
AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained. 相似文献
12.
Low-threshold current AlGaAs/GaAs-distributed feedback laser grown by two-step molecular beam epitaxy 总被引:1,自引:0,他引:1
Kojima K. Noda S. Mitsunaga K. Kyuma K. Nakayama T. 《Lightwave Technology, Journal of》1986,4(5):507-512
AlGaAs/GaAs-distributed feedback (DFB) lasers with oxide-stripe structure were fabricated by a two-step molecular beam epitaxial (MBE) growth for the first time. The large coupling coefficient of 90 cm-1and the threshold current as low as 165 mA at room temperature were obtained with the second-order gratings. The characteristic temperature T0 was as high as 210 K. Single longitudinal-mode oscillation was observed up toI/I_{th} = 1.5 and from 0 to 50°C without any mode hopping. The wavelength variation from device to device was ±5 Å. The dependence of the coupling coefficient on the device structure was calculated, and it was shown that MBE is much more advantageous than LPE to enhance the coupling coefficient. 相似文献
13.
G. Kipshidze S. Nikishin V. Kuryatkov K. Choi Ìu. Gherasoiu T. Prokofyeva M. Holtz H. Temkin K. D. Hobart F. J. Kub M. Fatemi 《Journal of Electronic Materials》2001,30(7):825-828
Epitaxial layers of AlN and GaN were grown by gas source molecular-beam epitaxy on a composite substrate consisting of a thin
(250 nm) layer of silicon (111) bonded to a polycrystalline SiC substrate. Two dimensional growth modes of AlN and GaN were
observed. We show that the plastic deformation of the thin Si layer results in initial relaxation of the AlN buffer layer
and thus eliminates cracking of the epitaxial layer of GaN. Raman, x-ray diffraction, and cathodoluminescence measurements
confirm the wurtzite structure of the GaN epilayer and the c-axis crystal growth orientation. The average stress in the GaN
layer is estimated at 320 MPa. This is a factor of two less than the stress reported for HVPE growth on 6H-SiC (0001). 相似文献
14.
S. H. Li P. K. Bhattacharya S. W. Chung J. X. Zhou E. Gulari 《Journal of Electronic Materials》1993,22(4):409-412
Solid boron and antimony doping of silicon and SiGe grown by molecular beam epitaxy using disilane and germane as sources
has been studied. Elemental boron is a well behaved p-type dopant. At effusion cell temperatures of 1700–1750°C, hole carrier
concentrations in the 1020 cm−3 range have been obtained. Elemental antimony doping shows surface segregation problems. For uniformly doped layers, the as-grown
materials do not show n-type conductivity. Electron concentrations in the 1017 cm−3 range were obtained by post-growth conventional and rapid thermal annealing at 900 and 1000°C, respectively. The electron
Hall mobility improves with optimum annealing time. Delta doping of buried layers exhibits slightly better incorporation behavior
including significant surface riding effects. 相似文献
15.
Hooper S.E. Kauer M. Bousquet V. Johnson K. Barnes J.M. Heffernan J. 《Electronics letters》2004,40(1):33-34
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of /spl sim/30 kA cm/sup -2/. 相似文献
16.
Alexandre F. Benchimol J.L. Dangla J. Dubon-Chevallier C. Amarger V. 《Electronics letters》1990,26(21):1753-1755
The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm/sup 2/ is obtained for a beryllium base doping as high as 8*10/sup 19/ cm/sup -3/. The base sheet resistance of 140 Omega / Square Operator is among the lowest reported values.<> 相似文献
17.
Tournie E. Grunberg P. Fouillant C. Kadret S. Boissier G. Baranov A. Joullie A. Gaumont-Goarin E. Ploog K.H. 《Electronics letters》1993,29(14):1255-1257
Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga/sub 0.47/In/sub 0.53/As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mu m, the threshold current-density is approximately 500 A/cm/sup 2/ and the characteristic temperature is T/sub 0/ approximately=30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wavelength, due to increased losses and filling of the quantum-well energy levels.<> 相似文献
18.
Lott J.A. Schneider R.P. Jr. Choquette K.D. Kilcoyne S.P. Figiel J.J. 《Electronics letters》1993,29(19):1693-1694
The first room temperature (23 degrees C) continuous wave visible vertical cavity surface emitting laser diodes are reported. Annular contact devices with a 5 mu m optical aperture in a 15 mu m diameter mesa emit at 670.4 nm with a threshold current of 5 mA at 2.4 V. Devices with 20-60 mu m diameter mesas operate continuous wave below -13 degrees C.<> 相似文献
19.
LIU Zhaojun ZHU Lianqing ZHENG Xiantong LU Lidan ZHANG Dongliang LIU Yuan 《光电子.激光》2023,19(3):155-158
We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II superlattices (T2SLs) epitaxial materials grown by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscope (AFM) are used to characterize the material quality and morphology. The full width at half maximum (FWHM) of the XRD 0th satellite peaks ranges from 32'' to 41'', and the root mean square (RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence (PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity (GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness (0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector. 相似文献
20.
Unlu M.S. Strite S. Won T. Adomi K. Chen J. Mohammad S.N. Biswas D. Morkoc H. 《Electronics letters》1989,25(20):1359-1360
Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.<> 相似文献