脉冲激光沉积薄膜的残余应力测量

为了测量脉冲激光沉积法制备的小面积薄膜的残余应力,并解决Stoney公式在特定情况下误差较大的问题,本文提出了一种基于悬臂梁结构和数值计算的薄膜残余应力测量方法。该方法以初始曲率为零的原子力显微镜探针作为衬底梁,在衬底梁上使用脉冲激光沉积方法沉积被测薄膜,并记录衬底梁在薄膜沉积前后的翘曲形貌变化,再结合薄膜厚度、衬底梁几何尺寸、所涉及材料的杨氏模量与泊松比等其他参数,借助数值计算对实验数据进行分析,得出被测薄膜的残余应力。使用该方法测出:基于脉冲激光沉积法在高温环境下制备的二氧化钒薄膜的残余应力为-340 MPa,与文献报道的结果相符。本文提出的基于悬臂梁结构和数值计算的薄膜残余应力测量方法具有适用范围广、准确度好、实验成本低的优点。     

梯度残余应力下多层膜结构的弹性变形

提出了一类Stoney延伸公式来表征多层MEMS膜结构的曲率和其各层膜内沿厚度任意分布的残余应力之间的关系。推导出三层结构下的Stoney延伸公式,并利用它解决了残余应力沿厚度方向梯度分布的三层悬臂梁结构的变形问题。制造了一个Si3N4/p+Si/Si三层悬臂梁微结构,并测得其弯曲曲率,在p+硅层残余应力梯度分布和均匀分布两种情况下分别对该结构进行了仿真和解析计算。结果表明：所提出的Stoney延伸公式能比较准确地表征多层膜结构的弹性变形和其各层膜内任意分布的残余应力之间的关系;用平均残余应力代替实际的梯度残余应力,会对结构变形的预测带来更大的误差。     

微电子机械系统中的残余应力问题

残余应力一直是微系统技术（MST）发展中一个令人关注的问题,它影响着MEMS器件设计、加工和封装的全过程。文中考虑薄膜中残余应力的起源,介绍测量残余应力的主要方法,并就计算薄膜中残余应力的Stoney公式及其推广形式作了详细的讨论,针对微尺度下残余应力对MEMS结构力学行为的影响,例如屈曲和粘附等进行了初步的分析。     

硅基铁电微声学器件中薄膜残余应力的研究

采用基底曲率法测量了硅基铁电微声学器件中各层薄膜的残余应力情况,通过调节热氧化的二氧化硅层的厚度,优化了微声学器件中复合膜的残余应力,得到平整的振膜结构,提高了器件的可靠性和成品率。     

用小孔释放法测量焊接高残余应力时孔边塑性变形对测量精度的影响及修正方法

研究了用小孔释放法测量焊接残余应力时孔边的塑性变形对测量精度的影响。根据弹塑性理论分析了孔边屈服的条件，并据此得到了孔边屈服后应变释放系数的修正公式，使小孔释放法测量焊接残余应力的精度得到提高，并且扩大了应力值的测量范围。对平板对接埋弧焊焊接接头残余应力的实测表明，修正后的残余应力分布更趋于合理。     

用小孔释放法测量焊接高残余应力时孔边塑性变形对测量精度的影响及修...

研究了用小孔释放法测量焊接残余应力时孔边的塑性变形对测量精度的影响。根据弹塑性理论分析了孔边屈服的条件，并据此得到了孔边屈服后应变释放系数的修正公式，使小孔释放法测量焊接残余力的精度得到提高，并且扩大了应力值的测量范围。对平板对接埋弧焊焊接接头残余应力的实测表明，修正后的残余应力分布更趋于合理。     

TiN薄膜的残余应力调控及力学性能研究

残余应力是制约物理气相沉积（Physical vapor deposition,PVD）硬质薄膜厚度的关键因素。采用多弧离子镀技术在高速钢基体上制备了厚度从3.7 m到15.5 m的TiN薄膜,结合曲率法和有限元法研究残余应力及结合性能随膜厚的变化规律。结果表明,随着膜厚的增加,基片弯曲程度加剧,而薄膜平均残余应力降低;膜层内残余应力的整体水平决定了界面切应力大小,薄膜结合性能随界面切应力的增加而降低。增加基体偏压、降低工作气压均导致薄膜内部残余应力的升高。当残余压应力较高时,TiN薄膜具有细小、致密的柱状晶结构,并呈现（111）择优取向,薄膜硬度及断裂韧度较高,耐磨性能良好。研究结果提示我们,通过残余应力的调控可提高硬质薄膜的力学特性。     

残余压应力场中薄膜纳米测量硬度的变化与校正

利用量纲定理和有限元法系统分析了残余压应力场中薄膜硬度的变化规律,在此基础上提出了薄膜硬度的修正公式.该修正公式把有、无残余应力时的薄膜硬度比值Hr/H0、卸载功和压入总功的比值We/W、残余压应力σr和硬度的比值σr/Hr联系起来,据此,只要测定薄膜纳米压入加、卸载曲线及薄膜中的残余压应力,便可最终确定无残余应力时的薄膜硬度.     

微机械加工薄膜压力传感器的非线性特性

热残余应力对微机械加工制备的压力传感元件的非线性有重要影响.通过测量晶片曲率计算残余应力、有限元分析以及实验对照等方法,为解决氮化硅的残余应力和膜片厚度引起压力非线性问题建立了一个优化设计的窗口.     

微拉曼光谱法检测非制冷红外焦平面阵列残余应力

实验所采用的非制冷红外焦平面阵列由Si O2薄膜和硅基底组成,具有MEMS微结构。热氧化生成Si O2薄膜过程中会因热失配和晶格失配而产生很大的残余应力,其大小影响微元件的整个性能,对其检测至关重要。利用微拉曼光谱法对两个Si O2薄膜/硅基微结构的进行了残余应力检测。实验结果表明,硅层横截面上残余应力随着深度的增大而递减,近似成二次曲线分布,并结合力平衡概念和微积分方法,计算出两个试样的薄膜残余应力大小分别为3.3 GPa和2.2 GPa。对薄膜微小单元体进行应力分析,得出薄膜残余应力为压应力。在应力释放过程中,达到GPa量级的残余应力会使薄膜皱曲、弯曲,产生鼓峰,甚至会造成膜层的破坏失效。     

硅基PZT压电功能结构研究

PZT压电薄（厚）膜是制备MEMS传感元件和执行元件重要的功能材料,对近年PZT薄（厚）膜在MEMS领域的研究现状进行了分析,提出了一种新型的双杯PZT/Si膜片式功能结构;采用有限元方法对双杯PZT/Si膜片进行了结构优化,得到PZT和上、下硅杯的结构优化值为DPZT: D1:D2 =0.75:1.1:1;一阶模态谐振频率为13.2KHz;以氧化、双面光刻、各向异性刻蚀,以及PZT厚膜丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片,该膜片具有压电驱动功能。双杯PZT/Si膜片式功能结构的MEMS技术兼容性好,对芯片内其它元件或电路的影响小,适合作为MEMS片内执行元件的驱动机构。     

单轴微拉伸MEMS材料力学性能测试的系统集成

为了对微米尺度薄膜材料的力学性能进行测试,开发了一套成本较低的单轴微拉伸MEMS材料力学性能测试系统。首先,根据有限元模拟优化设计测试样片,使其能够易于夹持、准确对中,以利于应力和应变的测量。接着采用三维非硅UV-LIGA微加工技术制备了Ni薄膜样片。根据单轴拉伸测试过程和硬件构成,以Visual Basic为平台编译了一套数据采集与分析系统。最后,应用该测试系统完成对电镀Ni薄膜材料性能的测试。实验结果表明,该系统能够精确测试试样应变,精度达到0.01μm,拉伸力精度达到mN级。得到的电镀Ni薄膜材料的杨氏模量约为94.5 GPa,抗拉强度约为1.76 GPa。该系统基本满足微米尺度材料单轴微拉伸力学性能测试的需要。     

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams

We report on a technique for making high-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate with micromachined cantilever beams. The residual stress in the film causes the beams to bend. The curvature of the beams, which is proportional to the residual stress in the film, is measured by scanning an array of parallel laser beams generated with a diffraction grating along the length of the beams. The reflections of the laser beams are captured using a digital camera. A heating stage enables measurement of the residual stress as a function of temperature. As the curvature of each beam is determined by the local stress in the film, the film stress can be mapped across the substrate. This feature makes the technique a useful tool for the combinatorial analysis of phase transformations in thin films, especially when combined with the use of films with lateral composition gradients. As an illustration, we apply the technique to evaluate the thermomechanical behavior of Fe-Pd binary alloys as a function of composition.     

High-temperature residual stresses in thin films characterized by x-ray diffraction substrate curvature method

A new x-ray technique to determine temperature dependencies of macroscopic stresses in thin films by characterizing the substrate curvature is introduced. The technique is demonstrated on polycrystalline TiN and Al thin films deposited on Si(100) wafers. The structures are thermally cycled in the temperature range of 25-400 degrees C using a newly developed heating chamber attached to a commercial x-ray diffractometer. The curvature of the freestanding samples was determined by the rocking curve measurement of substrate Si 400 reflections at different lateral positions of the samples, and the stresses are calculated using Stoney's formula. The results show that the magnitude of the stress is in good agreement with the results obtained by other techniques. For the practical application of the technique, the sample mounting and the temperature control are of great importance.     

盲孔法测量焊接残余应力应变释放系数的有限元分析

为探讨简单易行的盲孔法测量焊接残余应力应变释放系数A、B的标定方法，根据盲孔法测量残余应力时应变释放系数A、B试验标定原理和强度理论，建立三维有限元模型，分别对盲孔法测量92lA钢焊接残余应力应变释放系数进行有限元标定和孔边应力集中有限元塑性修正．并由此得出应变释放系数随孔深与孔径比值的关系式和应变释放系数随形状改变比能参量S变化的塑性修正公式；将有限元标定结果与试验标定结果、通孔应变释放系数理论解进行比较，结果表明，有限元标定结果与试验结果、通孔应变释放系数理论值有较好的一致性，经塑性修正，计算结果与试验测量结果的偏差大大减小，建立适当有限元模型，用有限元法标定释放系数和进行孔边塑性变形修正是可行的。     

Prediction of residual stress distribution in multi-stacked thin film by curvature measurement and iterative FEA

In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element method FEMi. We develop a finite element program for residual stress analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multistacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA. mean stresses and stress gradients of single and multilayers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney’s equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the left film after etching layer by layer in multi-stacked film.