非刻意掺杂4H-SiC同质外延中的深能级缺陷

Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition （HWCVD） have been studied using photoluminescence （PL） technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon （Vc） are revealed by electron spin resonance （ESR） technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.     

Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy

Strong yellow luminescence (YL) was found in GaN grown by the halide vapor phase epitaxy technique, using an NH₃-HCl-GaCl-N₂-H₂ growth chemistry. The low-temperature (less than 100K) thermal activation energy of the yellow luminescence was determined to be ∼18 meV, which indicates that a shallow donor, rather than a ‘shallow’ acceptor, was involved in observed radiative transition. The temperature dependence of the YL peak energy and the shape of the YL band imply that there are multiple recombination channels involved in the YL band. The ratio of integrated intensity of yellow-to-bandedge luminescence decreased with an increase of HCl (and hence GaCl and growth rate) in the growth ambient.     

Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers

Local energy levels produced by dislocations at the interface between bonded n- and p-Si wafers are studied by deep level transient spectroscopy and by a new technique for the detection of impurity luminescence, induced by the occupation of electron states upon the application of electric pulses (the pulsed trap-refilling-enhanced luminescence technique). It is established that only the shallow levels of the dislocation network, with activation energies of about 0.1 eV, are responsible for the D1 dislocation-related luminescence band in both n- and p-type samples. The occupation of deep levels has no effect on the D1-band intensity. A model of coupled neutral trapping centers for charge carriers is proposed. In this model, the difference between the energy position of the D1 band (0.8 eV) and the corresponding interlevel energy spacing (0.97 eV) is attributed to the Coulomb interaction between charge carriers trapped at the levels.     

Effects of Zn-vapor heat treatments on the edge emission and deep-center luminescence of ZnTe

Using cathodoluminescence measurements at 80–300K, we have investigated the effects of Zn-vapor heat treatments on the injection level dependence, frequency response, and temperature dependence of the edge emission and the extrinsic deepcenter luminescence of vapor-phase-grown ZnTe. The results are compared to those from the same material in its as-grown condition. Zn-vapor heat treatments greatly enhance the 1.8 eV deep-center band and make it the dominant spectral feature at all temperatures investigated. The resulting band shows little change in shape or energy with injection level, and the temperature dependence of the band does not suggest thermal exchange between a participating energy level and a band edge. While the energy of the 1.8 eV band does decrease with increasing temperature, it does not match the variation of the band gap with temperature. It is found that the 1.8 eV band broadens with increasing temperature in a way satisfactorily explained by configurationcoordinate modeling. The kinetics of the 1.8 eV band show complex detail, both at 80K and 300K, but microsecond-magnitude exponential components are dominant. In contrast, the kinetics of the edge emission are much faster. However, despite the difference in kinetics, the intensities of the 1.8 eV band and the edge emission at 80K scale closely with each other over a wide range of injection levels. This remarkable result indicates that the edge emission and deep-center luminescence processes do not involve independent competition for injected carriers in Zn-fired ZnTe.     

Blue/green luminescence based on Zn(S)Se/GaAs heterostructures

Substantial advances have been realized in the aim to achieve blue–green light emitting devices based on Zn(S)Se wide band gap II–VI semi-conductor materials. Two light emitting diodes p on n and n on p heterostructures were grown on GaAs substrate by molecular beam epitaxy. The active layer was a single ZnCdSe quantum well, with ZnSSe guiding layers and ZnSe cladding layers. p-GaInP, p-AlGaAs and p-CdZnSe buffer layers were deposited at the p-ZnSe/GaAs interface to reduce the valence band offset in the case of n on p heterostructures. Electrical and optical properties were investigated using current voltage, capacitance voltage, electroluminescence, photoluminescence and photocurrent measurements at room temperature. Blue–green luminescence centered at 516.7 nm is observed. The highest luminescence intensity is observed under 7 V forward bias. Photoluminescence spectrum shows two wide peaks at 2.2 and 1.9 eV energies. These energies are attributed to the transitions between ZnSe and GaAs conduction bands and the deep level at E_v−0.6 eV. Absorption process from ZnSe and ZnSSe conduction bands to the shallow nitrogen acceptor level (2.6 and 2.8 eV, respectively) have been observed using photocurrent measurements. From these results we present a band alignment diagram which confirms the presence of the two levels at 0.1 and 0.6 eV from the valence band of ZnSe.     

Anti-stokes luminescence of Zn<Subscript>0.75</Subscript>Cd<Subscript>0.25</Subscript>S microcrystals annealed in the presence of oxygen

The nature of anti-Stokes luminescence centers excited in the temperature range 77–300 K by light with wavelengths from 620 to 710 nm and intensities in the range 10¹⁵–10¹⁶ photons/cm² in Zn_0.75Cd_0.25S microcrystals annealed in the presence of oxygen has been investigated. It is shown that the centers of two-photon excitation of this luminescence are clusters of native metal oxides (ZnO) _n and (CdO) _n , whose energy levels in the Zn_0.75Cd_0.25S band gap are 1.70–1.95 eV below the bottom of the conduction band.     

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with increasing V doping level. We also observed that the peak position of the blue luminescence shifted at lower energy with decreasing excitation density. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity. This observation is explained by a reaction involving V and gallium vacancy (_√Ga). PL spectra at low temperature exhibited a series of peaks. The donor-acceptor (D-A) pair emission peak at 3.27 eV was strongly pronounced, as the temperature was decreased. On the other hand, the intensity of the BB emission decreased. This BB emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV.     

铜掺杂多孔硅的光致发光及其载流子的复合过程

采用浸泡镀敷的方法在多孔硅表面形成了一镀铜层,通过对掺铜前后多孔硅的光致发光(PL)谱和傅里叶变换红外(FTIR)吸收光谱的研究,讨论了铜在多孔硅表面的吸附对其光致发光的影响。实验表明,掺铜多孔硅的光致发光谱出现两个发光带,其中能量较低的发光带随主发光带变化,并使多孔硅的发光峰位蓝移。多孔硅发光峰位的蓝移,是由于在发生金属淀积的同时伴随着多孔硅表面Si的氧化过程(纳米Si氧化为SiO2)的缘故。     

ZnO/SiC/Si(111)异质外延

使用SiC作为过渡层,采用自行设计建造的连通式双反应室高温MOCVD系统很好地克服了ZnO和SiC生长时的交叉污染问题,在Si基片上外延出高质量的ZnO薄膜.测量了样品的XRD和摇摆曲线,以及室温下的PL谱.实验结果表明,SiC过渡层的引入大大提高了ZnO薄膜的质量和发光性能,并有望实现在Si上制备ZnO单晶薄膜.     

Ce3+对Er3+的上转换荧光淬灭

提要:本文研究了Ce3 离子对Er3 离子的上转换荧光淬灭规律,随着Ce3 离子浓度增加,Er3 离子各波段的上转换荧光强度迅速下降,并且发现红色荧光带的淬灭要快于绿色荧光带。具体分析了Er3 离子的上转换荧光的产生机制,通过分析Ce3 对Er3 离子淬灭机理,进一步讨论了Er3 离子的上转换机制。     

Optical properties of photochromatic sulfur-doped chlorosodalite

Synthetic.photochromic sulfo-chlorosodalite, 6(NaAlSiO₄) ·2 NaCl(S), has been thoroughly investigated by measurements of optical absorption, photo-luminescence and cathodoluminescence. Depending on the sulfur ion form and concentration, the doped sodalite exhibits either sensitive tene-brescence or photoluminescence with long wavelength UV excitation. The photo-induced color absorption peaks at 5260A at 300°K with absorption coefficient, Δα_max >200 cm⁻¹ . This is by far the highest photo-induced absorption observed for synthetic chlorosodalite. At 80°K, the peak position of the absorption does not show significant shift within instrumental accuracy. In photoluminescence, the emission spectra as well as the excitation spectra are studied at both 300 and 78°K. Four characteristic spectral bands (IR, blue, red, and a band with oscillation in wavelength) are observed. The oscillatory S₂ ^- ion emission band starting about 2.35 eV and extending to lower energy and the IR band peaked at 1.4 eV are most efficiently excited by 3660A (3.4 eV), whereas the blue luminescence peaked at 2.7 eV has an excitation threshold of 3.9 eV. The red band is often masked by the oscillatory band and can be observed by higher energy excitation. The red and blue bands are also observable in the cathodoluminescence measurements of the sulfur-doped samples but not the undoped samples. Correlating the absorption, luminescence, and excitation spectral results, a quantitative model is derived to interpret the nature and the role of sulfur ions in the photochromic chlorosodalite material.     

Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE

Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al_0.5In_0.5P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxygen forms several energy levels in the bandgap with energies of 0.62 eV to 0.89 eV below the conduction band detected using deep level transient spectroscopy. Secondary ion mass spectroscopy measurements of the total oxygen concentration in the layers shows a direct correlation to the measured trap concentrations. Several other energy levels are detected that are not correlated with the oxygen content of the film. The possible origin of these additional levels is discussed.     

ZnMgSe/ZnCdSe多量子阱的光学性质

通过光致发光 (PL)和拉曼 (Raman)光谱研究了分子束外延 (MBE)生长的 Zn Mg Se/ Zn Cd Se多量子阱的光学性质。在 80 K到 3 0 0 K温度范围内 ,观测到了 PL光谱中来自量子阱的自由激子发光 ,通过发光强度与温度的变化关系 ,计算了激子束缚能。结果表明在 Zn Mg Se/ Zn Cd Se多量子阱 (MQWs)势垒层中 ,Mg的引进增强了量子阱的限制效应 ,导致激子具有较好的二维特性。在室温下的 Raman光谱中观测到了多级纵光学声子(LO)和横光学声子 (TO)的限制模 ,表明多层结构具有较高的质量     

Eu3 ,Li 共掺杂ZnO:Zn荧光粉的制备及发光性质

在还原气氛下利用高温固相反应法制备了Eu3 ,Li 共掺杂的ZnO:Zn 荧光粉.在近紫外光激发基质条件下,该荧光粉材料具有强的来自Eu3 的4f组态内跃迁线状发射及来自基质缺陷相关的绿色可见宽带发射.测量了稳态光谱,漫反射及时间分辨光谱以研究该材料的发光性质及基质向稀土离子的能量传递过程.在还原气氛下因在导带下形成了一系列浅施主能级,暂时储存激发能,施主中心浓度增加使得基质向稀土离子的能量传递效率增强.通过与纯Eu2O3粉末的光谱对比分析,确定了在此材料体系中存在处于两种局域环境的Eu3 .由于在近紫外区的强且有效的吸收,此材料有望成为应用于近紫外激发发光二极管的新型荧光粉.     

Direct gap recombination in germanium at high excitation level and low temperature

In highly excited germanium and at low temperatures, a luminescence is observed at energies above the indirect gap at an energy of 0.880 eV. This luminescence is generally observed in connection with a broadened electron-hole-drop emission line thus indicating an increased density in the plasma state. At the same time, absorption in that energy range is reduced drastically. This luminescence is attributed to direct recombination processes between the Γ₂ conduction band minimum and the Γ₂₅ valence band maximum. The measurements we report concern the dependence of this luminescence on excitation conditions keeping the bath temperature constant at 2K. Line-shape, line-width and energetic position indicate that free carrier band-to-band recombination and no excitonic effects are involved. The dependence of the luminescence intensity on excitation power is well explained by a coupling by Auger processes between the indirect and the direct gap in germanium.     

Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures

Electroluminescence properties of PbTe pn junctions grown under various tellurium vapor pressures are investigated. For unintentionally doped pn junctions, the luminescence bands corresponding to D-A pair and band to band transition are observed. The luminescence intensity of the band to band transition has depended on tellurium vapor pressure, which suggests nonradiative transitions through nonstoichiometric defects forming deep levels. For pn junctions with Bi-doped epitaxial layers, only one peak appears at 20∼25 meV below band to band-transition energy, which, probably, shows recombination through impurity levels or impurity band originating from Bi-doping.     

Temperature,injection level,and frequency dependences of some extrinsic luminescence bands in ZnTe

Using cathodoluminescence measurements between 80 and 300 K, we have investigated the temperature, injection level, and frequency dependences of three extrinsic luminescence bands in nominally undoped ZnTe. At 80 K, our material shows strong edge emission and broad extrinsic bands near 1.59 eV and 2.08 eV. The peak position and band shape are independent of injection level for both these extrinsic bands. 80 K measurements of frequency response from 50 Hz to 50 MHz show that the 2.08 eV band has an exponential time decay with a time constant of 0.045 μsec. The 1.59 eV band shows a more complex frequency dependence which indicates that one component of the response has a time constant of 1.85 μsec. At temperatures above 80 K the 2.08 eV band quenches with an activation energy of 0.22 eV which indicates that the transition originates near a band edge. In contrast, the 1.59 eV band does not quench with a well-defined activation energy. The peak of the 2.08 eV band follows the temperature dependence of the edge emission energy, whereas the peak of the 1.59 eV band shows the opposite behavior. From the 80 K measurements, we conclude that the 2.08 eV band results from a conduction-band-to-acceptor transition, and that the 1.59 eV band results from an intracenter transition between localized levels of a compact complex. Above 160 K, a third extrinsic band begins to appear near 1.80 eV. This band becanes increasingly prominent with increasing temperature. The frequency dependence of the 1.80 eV band at 166 K indicates an exponential time decay with a time constant of 0.37 μsec. However, the frequency dependence changes with temperature and a faster component appears in the response at 300 K. We conclude that 1.80 eV band near 160 K results primarily from an intracenter transition in a compact complex, and that there is a contribution from free-to-bound transitions at 300 K.     

Tracking Luminescence of ZnO During Electron Beam Irradiation

We have developed instrumentation for collecting the luminescence spectrum from solid samples while they are irradiated by electrons of sufficient energy to produce point defects. This instrumentation is used to investigate the evolution of the broad region of the zinc oxide luminescence spectrum which lies between 250 nm and 650 nm (4.95 eV to 1.90 eV). Electron irradiation is at 0.55 MeV and 1.0 MeV. Irradiation at 0.55 MeV produces only defects associated with displaced oxygen. Irradiation at 1.0 MeV produces defects which can be associated with displacement of either oxygen or Zn. The samples were held at liquid-nitrogen temperature to give the best possible defect lifetime for any defect created. A luminescent band centered at 415 nm (2.99 eV) was observed to grow with increasing irradiation dose in samples grown by pulsed laser deposition. There was no difference in the growth of the luminescence during irradiation at 0.55 MeV and 1.0 MeV. No discernible luminescence or alteration of the luminescence from the traditional green band region was observed during irradiation of these samples.     

氢化对ZnO发光性质的影响

通过低温光致发光(PL)谱研究氢化对ZnO发光性质的影响.氢通过一个直流等离子体发生装置引入到ZnO晶体.研究发现氢的引入影响了束缚激子的相对发光强度,特别是氢化以后I4峰(3.363eV)的强度增加.与未氢化样品相比较,氢化样品显示出不同的温度依赖PL谱.在4.2K温度下,测量了氢化样品表面以下不同深度处的PL谱.研究发现I4峰的强度和I4峰与I8峰强度比随深度变化而变化,说明了在引入的氢和浅施主之间的直接联系.一般而言,氢化会增强带边发射并钝化绿光发射.     

氢化对ZnO发光性质的影响

通过低温光致发光(PL)谱研究氢化对ZnO发光性质的影响.氢通过一个直流等离子体发生装置引入到ZnO晶体.研究发现氢的引入影响了束缚激子的相对发光强度,特别是氢化以后I4峰(3.363eV)的强度增加.与未氢化样品相比较,氢化样品显示出不同的温度依赖PL谱.在4.2K温度下,测量了氢化样品表面以下不同深度处的PL谱.研究发现I4峰的强度和I4峰与I8峰强度比随深度变化而变化,说明了在引入的氢和浅施主之间的直接联系.一般而言,氢化会增强带边发射并钝化绿光发射.