使用GaAs MMIC技术的X波段微波频率检测器

The design, fabrication, and experimental results of an MEMS microwave frequency detector are presented for the first time. The structure consists of a microwave power divider, two CPW transmission lines, a microwave power combiner, an MEMS capacitive power sensor and a thermopile. The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully. The MEMS capacitive power sensor is used for detecting the high power signal, while the thermopile is used for detecting the low power signal. Signals of 17 and 10 dBm are measured over the X-band. The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor, and 6.67 MHz / μV under 10 dBm by the thermopile, respectively. The validity of the presented design has been confirmed by the experiment.     

一种基于GaAs MMIC技术的X波段电容式膜桥MEMS微波功率传感器

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below-14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

探测器阵列法测量激光光斑参数关键技术分析

根据仅由衍射效应决定的远场激光光斑的分布函数,并以10.6μm CO2激光测量为例,分析了探测器点阵法测量远场激光大光斑的技术要求,包括能量密度、阵列尺寸、探测器间隔、响应频率几方面的要求.并分析了激光探测器器件的类型,给出探测器阵列单元探测器以及系统测量精度的标校方法.     

A high-speed power detector MMIC for E-band communication

An E-band high speed power detector MMIC using 0.1 μm pHEMT technology has been designed, manufactured and experimentally characterized. By employing a 4-way quadrature structure for phase cancellation, the first, second and third harmonics can be suppressed and the ripple at the output is minimized. Compared to conventional topology with a low pass filter, a short response time and high speed performance of demodulation can be reached. Simulated results indicate that the detector is capable of demodulating an on-off keying signal at a data rate up to 5 Gbps. The fabricated chip occupies 1×1.5 mm²and the on-wafer measurement shows a return loss of less than -15 dB, responsivity better than 700 mV/mW and dynamic range of more than 25 dB over 70 to 90 GHz.     

一种宽带的InGaP/GaAs HBT 再生频率分频器

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.     

一种基于肖特基二极管的大功率微波整流电路

为满足微波输能的大功率整流要求,提出了一种结合功分器和二极管阵列的整流电路,来提升微波整流电路的功率容量。该方法保持了较高整流效率,提升了整流电路的功率容量。根据需要调节功分器的分支数量,扩展了功率容量的覆盖范围。该电路结构紧凑,形式灵活,简捷高效。依此方法设计的整流电路,当输入功率在36dBm～42dBm时,均取得了大于60％的实测整流效率。在输入功率为41dBm时,整流效率达到了68％。电路的最高功率容量达到了43dBm 。     

A high power active circulator using GaN MMIC power amplifiers

This paper presents a 2.4 GHz hybrid integrated active circulator consisting of three power amplifiers and three PCB-based Wilkinson power dividers.The power amplifiers were designed and fabricated in a standard0.35- m Al Ga N/Ga N HEMT technology,and combined with three traditional power dividers on FR4 using bonding wires.Due to the isolation of power dividers,the isolation between three ports is achieved; meanwhile,due to the unidirectional characteristics of the power amplifiers,the nonreciprocal transfer characteristic of the circulator is realized.The measured insertion gain of the proposed active circulator is about 2–2.7 d B at the center frequency of 2.4 GHz,the isolation between three ports is better than 20 d B over 1.2–3.4 GHz,and the output power of the designed active circulator achieves up to 20.1–21.2 d Bm at the center frequency.     

基于砷化镓工艺的集成式功分器

A compact lumped integrated power divider with low insertion loss using 0.5 μm GaAs pHEMT technology is presented. The proposed power divider uses the π-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is analyzed and synthesized for insertion-loss influence. The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15-6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively. The compact dimension of the power divider is as small as 0.9 × 0.85 mm^2. The measured results agree well with the simulated ones.     

基于BP神经网络的X频段功率分配器优化设计

针对电大尺寸目标的高功率分配器电磁特性模拟难、对计算结果精度要求高等特点, 利用BP(Back Propagation)神经网络良好的非线性模拟能力,优化设计了一种电大尺寸的X 频段四路高功率分配 器,与HFSS仿真相比较减少了运算时间。采用Agilent矢量网路分析仪N5244A测试表明,在9 2 ～9.6 GHz频率范围内,各路损耗均优于6.8 dB,相位差为2°,与BP神经网络模拟 结果吻合较好,为电大尺寸的微波电路工程设计提供了参考。     

微波再生式分频器的实验研究

介绍一种微波再生式分频器的设计与实现。再生式分频器与数字分频器相比,它的工作频率高,相位噪声和杂散指标更为优越。设计出8GHz的微波分频电路,经过2次分频,输出信号为4GHz。实验结果表明,该微波再生式分频器输出信号比输入信号的相位噪声改善了约6dB,接近理论值,杂散指标优于-80dBc。     

一种基于MMIC技术的宽带左手非线性传输线二次倍频器

本文首次报道了基于MMIC技术的左手非线性传输线宽带二次倍频器。理论上分析了左手非线性传输线的二次谐波产生原理。在GaAs半绝缘衬底上制作了4节左手非线性传输线,面积为5.4mm*0.8mm。当输入信号为20dBm时,该倍频器在26.4GHz处获得最大二次谐波输出功率为6.33dBm,对应的-6dB带宽为24GHz~43GHz。实验结果与仿真结果吻合良好。以低频放大器作为激励,该倍频器可用于低成本,有效的毫米波甚至THz信号源系统。     

基于功率检波电平的自动功率定标

介绍了一种利用功率检波电平实现对宽带微波雷达信号源的输出功率进行功率定标的方法，通过衰减表自动装载规避不同工作环境(主要指微波机箱的工作温度)引起的系统误差。     

A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

A broadband frequency doubler using left-handed nonlinear transmission lines(LH NLTLs) based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm~2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.     

A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology

This letter presents a high speed 2:1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7 μm InP DHBT technology with f_T of 165 GHz and f_max of 230 GHz. The circuit includes a two-stage active transformer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer (widely known as the Gilbert cell) and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469×414 μm² and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximum output power at 37.5 GHz with a 0 dBm input signal of 75 GHz.     

具有在片稳定网络的GaAs HBT微波功率管

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.     

具有在片稳定网络的GaAs HBT微波功率管

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.     

0.5~2.7 GHz GaAs超宽带多功能MMIC芯片设计

基于0.25μm GaAs增强/耗尽型(E/D模)赝配高电子迁移率晶体管(PHEMT)工艺,设计并实现了一款集成了并行驱动器的多功能单片微波集成电路(MMIC)芯片。该芯片的移相器采用磁耦合全通网络(MCAPN)结构,功率分配器则使用集总元件进行集成,不仅缩小了芯片面积,并且在超宽带下实现了较好的相位精度和幅度一致性。采用微波探针台对芯片进行在片测试,结果表明在0.5~2.7 GHz,芯片性能良好:其小信号RF输入功率为0 dBm,芯片的插入损耗不大于7 dB,幅度波动在±0.8 dB以内,相位差为-98°~-85°,输入电压驻波比(VSWR)不大于1.9∶1,输出VSWR不大于1.9∶1,在-5 V电源下驱动器的静态电流为1 mA,响应速度为25 ns。芯片尺寸为3.4 mm×1.8 mm。该电路具有响应速度快、功耗低、集成度高等特点,可应用于多波束天线系统中。     

GaAs微波单片集成电路的主要失效模式及机理

从可靠性物理角角度，深入分析了引起砷化镓微波单片机集成电路（GaAs MMIC)退化或失效的主要失效模式及其失效机理，明确了GaAs MMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化，主要的失效部位是MMIC的有源器件。     

锁相鉴频器混沌现象的研究

该文研究无线电技术与现代通信领域广泛使用的锁相鉴频器中的混沌现象,利用Melnikov方法,证明了当输入信号参数、系统参数满足一定条件时,锁相鉴频器有混沌信号输出。通过电路实验,从频谱分析仪上观察到电路出现混沌时,压控振荡器输出端的连续频谱,进一步证实了锁相鉴频器电路中存在混沌现象。实验结果与理论分析相吻合,文中的结论对实际设计和应用锁相鉴频器,具有重要的指导意义。