Characterization in a Wide Frequency Range (40 MHz–67 GHz) of a KTa0.65Nb0.35O3 Thin Film for Tunable Applications

A (100) oriented KTa_0.65Nb_0.35O₃ 400 nm-thin film has been deposited by Pulsed Laser Deposition on MgO substrate. Microwave measurements, performed on InterDigitated Capacitors, show a paraelectric phase at room temperature with a tunability for the devices of 64% under an electric field of 400 kV/cm. Then, using a specific de-embedding method, the complex permittivity of the KTN thin film has been extracted from 40 MHz up to 67 GHz on coplanar waveguides. As promising applications are pointed out at 60 GHz, such as indoor communications, material characterizations are expected in this spectrum.     

Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters

Abstract

A tunable phase shifter was fabricated with epitaxial Ba_0.5Sr_0.5TiO₃ (BST) thin film and gold coplanar waveguide. BST thin film of the thickness ～0.5 μm was deposited by laser ablation on the MgO(OOl) single crystalline substrate. Gold electrode of the thickness ～2 μm was prepared by the sequence of thermal evaporation, electroplating, and wet etching. Epitaxial quality of the BST thin film was confirmed by X-ray diffraction. The microwave performance of phase shifter was measured at room temperature in the frequency range of 8–12 GHz, and with applied bias voltage of up to 30 V. Effect of Mn dopant in the epitaxial films was also considered.     

Investigation of the High Frequency Properties of BST Thin Films—A Comparison of Three Different Commonly Used Methods

In this work three different commonly used high frequency measurement techniques for the determination of the electrical properties of BST thin films are compared. Two of the three setups determine the permittivity and the loss factor of planar sapphire capacitors by either measuring the reflection coefficient or the influence onto the resonance frequencies of two coupled microstrip resonators. The third setup utilizes the differential propagation constant of two identical coplanar wave guides (CPW) of different length to calculate the permittivity and the loss factor of the involved sapphire substrate. It is found that the latter method shows the best accuracy for the measurement of the permittivity and the loss factor of the sapphire substrates over a broad frequency range. Measurements of BST coated sapphire substrates are presented using this technique.     

Synthesis and characterization of (BaxSr1−x)Ti1+yO3+z thin films and integration into microwave varactors and phase shifters

Abstract

Precise control of composition and microstructure is critical for the production of (Ba_xSr_1?x)Ti_1+yO_3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high frequency devices. Here we review recent results on composition-microstructure-electrical property relationships of polycrystalline BST films produced by magnetron sputter deposition, that are appropriate for microwave devices such as phase shifters. Films with controlled compositions were grown from a stoichiometric Ba_0.5Sr_0.5TiO₃ target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O₂) process pressure, while the O₂/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST layers yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabili-ties suitable for device applications. These BST films were used to produce distributed-cir-cuit phase-shifters, using a discrete periodic loading of a coplanar waveguide with integrated BST varactors on high-resistivity silicon. Phase shifters yielding 30 degrees of phase shift per dB of insertion loss were demonstrated at 20GHz.     

CHARACTERIZATION OF FERROELECTRIC FILMS UP TO 60 Ghz: APPLICATION TO PHASE SHIFTERS

ABSTRACT

Paraelectric Ba_0.5Sr_0.5TiO₃ films 0.3 μm thick have been deposited by sol-gel on c-axis sapphire substrates. They have been investigated from 1 kHz to 60 GHz using coplanar waveguide transmission lines and interdigitated capacitors. The dielectric constant ε_r is around 300 and the loss tangent is 0.16 at 50 GHz. The tunability is constant with frequency with a mean value of 42%. Analog phase shifters were subsequently fabricated. A 180° phase shift was obtained at 60 GHz with a 17 V bias. The maximum value of phase shift per decibel of insertion losses (at 0 V) is 13°/dB at 30 GHz with a bias of 30 V.     

Dielectric Properties of Yttrium Vanadate Crystals from 15 K to 295 K

Yttrium Vanadate (YVO₄) is a birefringent crystal, which has similar dielectric constant as that of Sapphire. In this paper we have reported the measurement of the real part of permittivity and loss tangent of YVO₄ crystal in the temperature range 15–295 K at a frequency of 16.3 GHz. We have used the dielectric post resonator technique for the microwave characterisation of the YVO₄ dielectric rod. The multifrequency Transmission Mode Q-Factor (TMQF) technique has been used for data processing and hence precise values of permittivity and loss tangent are achieved. Easily machineable YVO₄ is characterized by low losses at microwave frequencies. At temperature of 15 K and frequency of 16.3 GHz the permittivity was 9.23 and loss tangent was 2 × 10^{− 5}. YVO₄ is identified as a potential candidate to replace expensive Sapphire in many microwave applications.     

DESIGN,FABRICATION AND MATERIAL PROPERTIES OF TEMPERATURE STABLE PERFORMANCE CONSISTENT TUNABLE DEVICES

ABSTRACT

The premier candidate active material for tunable microwave phase shifter devices is single composition, paraelectric BaSrTiO₃ (BST). However, there is concern that in practical applications the device performance will be compromised due to the temperature dependence of the BST based device capacitance. We report a device design which controls the magnitude and the sign of the temperature coefficient of capacitance (TCC) via a multilayer paraelectric BST/buffer layer/ferroelectric BST coplanar device structure. To realize this multilayer device structure we have designed, fabricated, and optimized a 10 mol% Al doped Ta₂O₅ barrier layer with low loss (tan δ = 0.004), moderate permittivity (?_r = 42.8), low TCC (?20 ppm/°C), and a low bias stability of capacitance (0.4%). The thin film integration of the barrier layer with the BST layers was optimized for structure, microstructure, interfacial/surface morphology, and dielectric properties as a function of Al doping concentration, annealing temperature, material growth and integration process parameters.     

同轴谐振腔测量片状介质材料的介电常数

基于同轴谐振腔,提出一种测量低损耗片状介质材料相对介电常数的方法。结合麦克斯韦方程组和电磁场边界条件,分析部分填充介质的同轴谐振腔内TEM谐振模,推导填充介质同轴谐振腔的本征方程。采用多项式拟合法简化计算模型。本文通过计算分析,设计一个空腔工作频率在1.8183 GHz的同轴谐振腔进行研究。在HFSS电磁仿真软件中进行仿真分析,研究填充介质材料的厚度和放置高度对测量结果的影响,仿真测量结果与理论模型结果一致。在实验中搭建测量系统实现全自动测量。实验测量同轴谐振腔空腔的谐振频率为1.8183 GHz。对FR4介质材料的相对介电常数进行测量。经过多次测量表明测量系统稳定性良好。实验结果符合实际标称值,与仿真误差小于5%,证明该方法的可行性和准确性。     

Characterization of metal (Fe,Co, Ni,Cu) and fluorine codoped barium strontium titanate thick-films for microwave applications

The influence of codoping of Fe, Co, Ni, Cu as acceptors and F as donor on the dielectric properties of screen-printed Ba_0.6Sr_0.4TiO₃ ceramic thick-films has been investigated. The undoped and codoped Ba_0.6Sr_0.4TiO₃ powders were synthesized through a sol-gel route. The thermal gravimetric analysis revealed the difference of the thermal decomposition behaviour between the undoped and codoped precursors. The ceramic powders were characterized with x-ray diffraction, scanning electron microscopy and BET measurements. Larger crystallite sizes of the codoped powders were observed. The densification behaviour of the powders was recorded by dilatometry and indicated that codoping influences the sintering mechanism. The permittivity, dielectric loss and tunability of the undoped and codoped thick-films were characterized with coplanar waveguide structures up to 30 GHz.     

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb2O6 Thin Films

(001) oriented (Sr,Ba)Nb₂O₆ (SBN) thin films were deposited on MgO (001) single crystal substrates by the pulsed laser deposition method. Structural properties of SBN films were investigated using X-ray diffractometer. The microwave dielectric properties of SBN films were examined by calculating the scattering parameter obtained using a HP 8510C vector network analyzer with the frequency range 0.5–20 GHz at room temperature under the dc bias field of 0–80 kV/cm for interdigital capacitors (IDT) and coplanar waveguide (CPW) device based on SBN/MgO layer structure. Thick metal electrode patterns were fabricated by dc sputtering deposition, photolithography and etching process. The IDT device based on (001) oriented SBN films exhibited about 40% capacitance tunability with an electric field change of 80 kV/cm at room temperature, and the dielectric quality factor was about 20 at 12 GHz with no dc bias.     

Microwave frequency conversion in coplanar waveguide on bilayered substrate with (Ba,Sr)TiO3 film

Abstract

Experimental and simulated spectra of microwave (30GHz) signal at the output of the coplanar waveguide (CPW) based on Ba_xSr_1-xTiO₃ film are presented and discussed. The modulation of Ba_xSr_1-xTiO₃ film dielectric constant by the application of high frequency (f ≈ 20MHz) control signal results in the generation of side frequency components in the output signal spectrum. The analysis of experimental data is performed on the basis of considering the CPW section with tunable effective dielectric constant as a phase modulator     

An electromagnetic wave absorbing material with potential application prospects—WS2 nanosheets

Abstract

In this study, we report two-dimensional WS₂ nanosheets successfully synthesized by simple hydrothermal method. The obtained WS₂ nanosheets are very promising as electromagnetic wave absorbers. The phase composition, microstructure, electromagnetic properties and microwave absorption properties of the prepared WS₂ nanosheets were characterized by XRD, SEM, TEM, XPS and vector network analyzers. Our results show that the real and imaginary parts of permittivity of WS₂ prepared at 210?°C are higher than those of other samples, with maximum interfacial polarization and dielectric loss, a wide effective absorption band with a thinner thickness is obtained in the frequency range of 5.5–18?GHz. The effective absorption bandwidth can reach 12.5?GHz, the highest reflection loss of the sample wax containing 40% WS₂ is –15.6?dB at a thickness of 5.5?mm, and the absolute value of RL is greater than 10?dB in the range of 2.0–5.5?mm. The results show that the prepared WS₂ nanosheets have the advantages of wide bandwidth, strong absorption and light weight, and have potential application prospects in the application and development of microwave absorbing materials in the future.     

Mode‐matching analysis of a spit‐circular cavity resonator for measurement of the dielectric constant for film on a substrate

In this paper, we apply the mode‐matching technique (eigenmode expansion) to formulate an analytical model for a split cylindrical cavity resonator with a thick ceramic film layer sandwiched between two‐layer alumina substrates. We then compute the resonant frequencies with the TE₀₁₁ mode with an eigenvalue problem approach using the model formula. The quality factor (Q ‐factor) of the resonator is also calculated by applying the perturbation method to the analytical model. The validity of the proposed analytical technique is confirmed by applying this method to the estimation of permittivity of thick films as an inverse problem. Ceramic films (2 µm thickness) were synthesized using a chemical solution method onto 200‐µm‐thick, 50‐mm‐diameter alumina substrates. The complex permittivity of the films was then determined using the TE₀₁₁ mode split cylindrical cavity resonator in the 10‐GHz band. The extent of the edge effect at a sample insertion space was evaluated by comparing the estimated results through TE wave analysis using the mode‐matching method when the transverse resonance technique and the perturbation method were applied to calculate the resonant frequency and the dielectric Q ‐factor. The results obtained indicate that a difference of 0.153% in the permittivity of the alumina substrate causes differences of 6.10 and 3.75% in the measured permittivity and loss tangent, respectively, of 2‐µm‐thick ceramic film with a permittivity of ∼50. Differences in permittivity and loss tangent were more pronounced with thinner films. It was also confirmed that the estimated results for permittivity and the loss tangent values of these ceramic films were affected by the estimated permittivity value of the alumina substrate. © 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

IN-PLANE DIELECTRIC PROPERTIES OF EPITAXIAL Ba(Zr0.3Ti0.7)O3 THIN FILM GROWN ON LSAT (001) SINGLE CRYSTAL SUBSTRATE

ABSTRACT

Ba(Zr_0.3Ti_0.7)O₃ (BZT) thin film was deposited on (LaAlO₃)0.3(Sr₂AlTaO₆)_0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr_0.3Ti_0.7)O₃ thin film was characterized as a function of frequency (1 kHz–500 MHz), temperature (125 K–373 K) and dc electric field (0–13.3 V/μm) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 73%–50% at room temperature in the frequency range of 1 kHz to 500 MHz, showing the potential of our Ba(Zr_0.3Ti_0.7)O₃ thin film to be used in microwave devices.     

Surfaces structure of bulk and thin film ferroelectrics

Abstract

Based on the experimental results of thickness dependences of breakdown voltage and dielectric permittivity for BaTiO₃ family ceramics, (Pb, La)TiO₃ thin films and commercial multilayer capacitors, surface layer structures are discussed. Surface layers inside ferroelectric materials are consisting of non-ferroelectric Kanzig layer with low dielectric permittivity and with higher concentrations of impurities due to the inter diffusion between substrates and bulk, internal stresses induced by lattice mismatch, cubic-tetragonal phase transition, electric field induced anisotropies and internal bias field (space charge field). The Voltage - Current characteristics (V-I curve), D-E loops of ferroelectric materials show asymmetric behaviors. Saturation phenomena of V-I curves are observed only ferroelectric temperature region. The breakdown voltage almost depends on the non-ferroelectric Kanzig layer and the dielectric permittivity depends on the volume fraction of non-ferroelectric parts. Log-log plots of dielectric permittivity and breakdown voltage suggest that the thickness of non-ferroelectric Känzig layer should be at least more than 10～20 nm and in the grain boundary thickness of bulk ferroelectric materials should be more, especially in the liquid phase sintering, the thickness of grain boundary is a order of 0.1～0.2 μm.     

Ferroelectric tunable coplanar waveguide components for Ku- and K-band and applications

Abstract

The main objective of this research is to study the effect of inserting a Barium Strontium Titanate (BSTO) ferroelectric tuning layer in coplanar waveguide (CPW) and conductor-backed CPW (CBCPW) components. The modeled components include CPW and CBCPW transmission lines (with and without a dielectric filling between the center conductor and the ground planes). We have modeled the characteristic impedance (Z₀), effective dielectric constant (ε_eff), attenuation and dispersion as a function of circuit geometry and the ferroelectric thin-film's dielectric properties over the 10–20 GHz frequency range. We found that the presence of a ferroelectric layer between the transmission line and the ground planes improves the percentage change in ε_eff by almost two-fold with respect to a CPW deprived of this layer. This result is significant, as one could obtain larger frequency tunability with relatively lower applied fields compared to regular CPW or microstrip lines.     

High quality BaxSr1-xTiO3 films grown by mocld and novel ferroelectric/ferrite structures for dual-tuning microwave devices

Abstract

Excellent single crystal Ba_xSr_1-xTiO₃ (BST) films were grown on LaAlO₃ substrates using the metal-organic chemical liquid deposition (MOCLD) method. Very low losses (tanδ ∽0.002-0.008) were measured from these films at 400 KHz. Biaxially oriented BST films were successfully grown on polycrystalline YIG substrates using both MOCLD and pulsed laser deposition methods with biaxially oriented MgO and YSZ buffer layers. The dielectric losses of the films range from 0.005 to 0.015 while 25% of dielectric constant change was observed with 40V bias voltage up to 10 MHz. Both the dissipation and dielectric constant of the films remained nearly constants over a wide temperature range (77 K to 380 K). A dual-tuning microwave coplanar phase shifter using a BST film grown on a MgO buffered polycrystalline YIG substrate was fabricated. A significant phase shift was observed in GHz frequency range when an electric bias or a magnetic field was applied to the device.     

Microwave Characterization of BST Thin Films on LAO Interdigital Capacitor

The dielectric properties of (Ba_0.5Sr_0.5)TiO₃ (BST) thin films on LaAlO₃ (LAO) single crystals were studied over a wide frequency range. The samples with interdigital electrodes were prepared by microelectronic processing. The dielectric characterizations were carried out in the following steps: 1) the standard calibration of the instrument, 2) the removal of parasitic capacitance and the extraction of the capacitance of the interdigital capacitor (IDC) and 3) the extraction of the dielectric permittivity (?) of BST. It was found that ? of BST has a constant value (about 400) from 50 MHz to 2 GHz; at higher frequencies, ? gradually decreases. The BST interdigital capacitors exhibited good dielectric tunability.     

Magnetron sputter-deposited multilayer (BaxSr1x)Ti1+yO3+z thin films for passive and active devices

Abstract

High permittivity (Ba_xSr_1?x)Ti_1+yO_3+z(BST) thin films are being investigated for integration into charge storage dielectrics and electric-field tunable elements for high frequency devices. For the latter application, it is desirable to have BST capacitors with high tunability and low losses. Therefore, we investigated the use of multilayer BST thin films consisting of very low dielectric loss BST/electrode interfacial layers ((Ba+Sr)/Ti = 0.73) sandwiching a high tunability, high permittivity primary BST layer ((Ba+Sr)/Ti = 0.9). BST capacitors with multiple layers of controlled composition can be effectively produced insitu by magnetron sputter deposition, using a single stoichiometric target and controlling the layer composition by changing the total process gas (Ar+O<₂) pressure. The layered BST film capacitors exhibit simultaneous low loss (tan Δ = 0.005), high tunability (76%), high charge storage energy density (34 J/cm³), low leakage, and high dielectric breakdown (>2.8 MV/cm).