Planar and Parallel Dielectric Properties of Compositionally Graded (Ba,Sr)TiO3 Thin Films for Tunable Microwave Applications

Compositionally graded (Ba_x,Sr_{1 ? x})TiO₃ [BST] ferroelectric thin films have been received much attention in graded ferroelectric devices due to their unique properties, such as large pyroelectric coefficients, large polarization offset and small temperature coefficient of dielectric constant for microwave tunable devices. Compositionally graded BST thin films were deposited epitaxially on LaAlO₃ [LAO] and Nb-doped SrTiO₃ [STO:Nb] substrates by pulsed laser deposition. The planar and parallel dielectric properties of compositionally graded BST epitaxial thin films ware investigated in the frequency ranges of 100 Hz ～ 1 MHz as a function of the direction of the composition gradient with respect to the substrate at room temperature. The dielectric properties of the graded BST films depended strongly on the direction of the composition gradient with respect to the substrate. The graded ST → BT films grown on LAO and STO:Nb substrates exhibited a excellent dielectric properties than the graded BT → ST films.     

Deposition and characterization of low-loss epitaxial non-linear dielectric thin films for microwave devices

Abstract

Oxide ferroelectric thin films for frequency-tunable microwave devices, in which the dielectric constant of the non-linear dielectric is varied by application of electric fields, have been deposited using PLD. We have fabricated single phase epitaxial Ba_0.6Sr_0.4TiO₃ and KTaO₃ thin film capacitors for applications at 300K and 77K, respectively. Single phase KTaO₃ films were obtained only with excess potassium source in the target along with KTaO₃ perovskite phase. The films have been characterized for structure and morphology by X-ray diffraction and AFM. The dielectric properties were measured in the low frequency range from 100 kHz to 10 MHz, using interdigitated capacitors. Low loss tangents (0.002 at 300K) were observed for highly oriented Ba_0.6Sr_0.4TiO₃ films. The importance of low losses for various devices is discussed and the dielectric constants, loss tangents and tunability of these films are reported in this paper.     

Investigation of BaxSr1 − xTiO3 Film-Based Transmission Line for Direct Phase Modulation of Microwave Carrier

The possibility of using ferroelectric film-based transmission lines for a digital phase modulation of a microwave carrier was studied. Matched fin-line sections containing granular and polycrystalline Ba_xSr_{1 ? x}TiO₃ films of compositions x = 0.4 and x = 0.6 were used in this investigation. The behavior of the microwave carrier phase and amplitude at the fin-line output under DC or video-pulsed control voltage application is presented. The upper limit of the response time of the phase response to control voltage was estimated. Spectra of the phase-modulated signal were measured and simulated.     

Ferroelectric properties of Ba1−x Sr x TiO3 thin films synthesized by using novel sol–gel technique through carbonates

Ba_1?x Sr _x TiO₃ (BST) thin films were prepared on the substrate of Pt/Ti/SiO₂/Si by using novel sol–gel process through carbonates. The surface morphology and domain contrast of the films were investigated by atomic force microscopy (AFM), and the domain structures of the BST film were observed when AFM were operated in piezoelectric force microscopic (PFM) analysis and in the friction mode (FFM). The ferroelectric properties of the films were also investigated. It is shown that BST films obtained by the new sol–gel process through carbonates exhibit good properties.     

YBa2Cu3O7-x/SrTiO3//LaAlO3 heterostructures obtained by injection MOCVD

Abstract

YBa₂Cu₃O_7-x /Ba_xSr_1-xTiO₃ /LaAlO₃ heterostructures can be used as a basis for devices with voltage control in microwave circuits.

Ba_xSr_1-xTiO₃ (x=0–0.1) (BST) thin films have been epitaxially grown on LaAlO₃ substrates using injection MOCVD. The excellent crystalline quality of the obtained BST films can be proven by a FWHM of <0,2° for the rocking curve of the (002) BST reflection. An AFM study revealed flat surfaces, showing a surface roughness R_s as low as 1nm. YBa₂Cu₃O_7-x/Ba_xSr_1-x TiO₃//LaAlO₃ heterostructures were than optimised. The YBa₂Cu₃O_7-x (YBCO) layers obtained on Ba_xSr_1-xTiO₃ films are epitaxial with a FWHM of 0.45° for the (005) YBCO rocking curve and display very promising superconducting properties of T_c=92K.

Finally the microwave properties of the superconducting films were studied. For YBa₂Cu₃O_7-x layers directly deposited on LaAlO₃, surface resistance values of 0,32mΩ were obtained, while for YBa₂Cu₃O_7-x /SrTiO₃//LaAlO₃ heterostructures, higher values of 1mΩ at 8.5GHz were measured.     

A comparative study of tunable Ba1−x Sr x TiO3 thin film capacitors prepared by rf-sputtering and liquid-phase deposition

Abstract

Ba_1?x Sr _x TiO₃ thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown on lanthanum aluminate LAO(100) showed c-axis preferred growth orientation. Broad paraelectric-to-ferroelectric transitions were observed in films prepared by both methods. The tunability of the capacitance by means of an appplied electric field is examined using various capacitor geometries. A decrease in the capacitance exceeding 75% at 77 K was obtained from the MOD deposited films under an electric field strength of 0.3 MV/cm. On the other hand, the tunability of the capacitance in the rf-sputtered films ranged from 5 to 10% at 77 K and at 20 kV/cm, while it exceeds 50% in some films. The results are compared with the predictions of Devonshire's phenomenological theory.     

Thin film BaxSr1-xTiO3 ku- and k-band phase shifters grown on MgO substrates

Abstract

We report measurements of gold circuits fabricated on four Ba_xSr_1-xTiO₃ ferroelectric films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency (1 MHz) measurements of σ_T and tanδ on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters patterned onto the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed with amorphous buffer layer and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4°/dB at 18 GHz and 400 V dc bias were measured.     

Microwave Dielectric Properties of (111) Oriented Ferroelectric (Ba1 − xSrx)TiO3 Thin Films

Epitaxial (111) oriented ferroelectric (Ba_{1 ? x}Sr_x)TiO₃ (BST) films were deposited on MgO (111) single crystals using pulsed laser deposition. Structural properties of BST films were investigated using X-ray diffractometer. The dielectric properties of BST films were investigated under the dc bias field of 0–40 V using interdigital capacitors (IDT) fabricated by photolithography and etching process. The small signal dielectric properties of BST films were calculated by modified conformal mapping both the measured data using an impedance gain/phase analyzer and the reflection coefficient data measured using a HP 8510C vector network analyzer in 0.05–10 GHz at room temperature. The IDT capacitor based on (111) oriented BST film exhibits about 40% of capacitance change with an dc bias of 40 V which value is somewhat smaller than that of the IDT device based on (001) oriented BST film. But the dielectric quality factor value is about twice that of the device based on (001) oriented BST film.     

The electrical properties of Ba1-x SrxTiO3 thin films grown by sputter deposition

Abstract

Ba_1-x Sr_xTiO₃ (BST) thin films were deposited by reactive rf-magnetron sputtering onto Si substrates. The influence of the deposition parameters such as temperature and oxygen ambient on the dielectric constant of the films is presented. BST films deposited at 450°C and optimum conditions exhibited a dielectric constant of approximately 200 at frequencies as high as 1GHz. In addition, the films were found to have leakage current densities of <0.1μAmp/cm² at fields of 5×10⁵V/cm. An extrapolated lifetime greater than 10 years was obtained from stress tests at elevated temperatures and fields. These films compared favorably with published data.     

The effect of ceramic target processing on pulsed laser deposited thin films of barium strontium titanium oxide

Abstract

The effect of ball-milling on the powder, electronic, and optical properties of the barium strontium titanium oxide (Ba_1-xSr_xTiO₃, BSTO; 0≤×≤1) ceramics have been studied in detail.^[1] Thin films of these BSTO compositions were synthesized by the Pulsed Laser Deposition (PLD) method. The ablation targets were prepared from unmilled and milled powder of BSTO. The structural, optical, and electronic properties of the bulk ceramics and the thin films were investigated. A detailed report of these studies will be presented.     

Preparation of (PbxBa1-x)TiO3 thin films by MOCVD using an aerosol-assisted liquid delivery system

Abstract

Thin films of PbTiO₃, BaTiO₃ and (Pb_xBa_1-x)TiO₃ (PBT) have been prepared by metal-organic chemical vapor deposition using a horizontal reactor with an aerosol-assisted liquid delivery system. Structural and electrical properties have been investigated as a function of the lead content x. First results on PBT thin films grown on platinized silicon substrates show, for x < 0.8, an increasing tetragonal distortion of the lattice cell (c/a >1), and accompanying ferroelectric behavior which is similar to the bulk material. For smaller lead content (x < 0.8) no ferroelectric behavior is established and a small tetragonal distortion of opposite type (c/a <1) is observed. This distortion is attributed to a thermally induced tensile film stress and may be responsible for the suppression of the ferroelectric phase transition.     

STRESS CONTROLLED FERROELECTRIC (BA0.5Sr0.5)TiO3 THIN FILMS PREPARED ON GD2O3/SRTiO3(001) BY A PULSED LASER DEPOSITION

ABSTRACT

Stress controlled epitaxial ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films have been deposited on Gd₂O₃/SrTiO₃ by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750°C. In order to control the stress in BST films, oxygen pressures for Gd₂O₃ buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd₂O₃ were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1–20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd₂O₃ layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.     

Investigation of the effects of milling ceramic targets on the optical and electrical properties of BST thin films deposited by RF sputtering

Abstract

The RF sputtering method was utilized to deposit thin films of Ba_1-xSr_xTiO₃ (BST). The targets utilized in these experiments were prepared from ceramic powders with different particle size. The goal of this work is to examine whether the particle size distribution of the target can affect the properties of the thin films fabricated by the sputtering method. The Atomic Force Microscope (AFM) was used to examine the grain size in the thin films. The composition of the thin films and the bulk materials were examined by Fourier Transform Infrared (FTIR) spectroscopy. The dielectric properties of the thin films were measured and compared to its bulk counterparts. It was found that on lattice matched electrodes of SrRuO₃ on LaAlO₃ substrates, the thin films deposited from ceramic targets manufactured from ball-milled powders had finer grain size than those deposited from targets made from unmilled powders. However, this phenomenon was not observed in the case of polycrystalline films deposited on platinized silicon wafers.     

Design of Tunable Balanced Amplifier Using Ferroelectric Materials

The non-linear electric field dependence of ferroelectric thin films can be used to design frequency and phase agile components. It is well known from the literature that ferroelectric-based tunable microwave component can easily be integrated into conventional microstrip circuits. These components are particularly attractive for broad-band and multi-frequency applications. However, most efforts have focused on the careful characterization of tunable passive devices while active components have been occasionally reported. In this work, simulated results from a full wave electromagnetic simulator are obtained to show the tunability of a quadrature hybrid made of Ba _x Sr_{1 ? x} TiO₃ (BSTO) ferroelectric thin film on MgO. The S-parameters of this passive structure are estimated for different bias conditions for the BSTO and used in the simulation of tunable balanced amplifier. Simulations of this type of amplifier are shown with and without matching networks.     

Effect of Ba2+ – Sr2+ co-substitution on the structural and dielectric properties of Lead Titanate

Growing interest in developing new materials for device applications led to study of ferroelectric oxides in a wide range and variety of compositions. In the present work, polycrystalline samples of lead barium strontium titanate (Pb_1-xBa_0.5xSr_0.5xTiO₃) solid solution system have been synthesized. Phase formation studies and crystal structure analysis were carried out by X ray diffractometry at room temperature, which suggested formation of single phase compound with tetragonal structure up to x?=?0.8 and cubic structure for x?=?1.0. The XRD pattern has been analyzed by employing Rietveld method. The phase transition in the system was confirmed by Differential Scanning Calorimetry (DSC). Samples with 0.0????x????0.8 are in ferroelectric state whereas with x?=?1.0 is found to be in paraelectric state at room temperature. Co-substitution of Ba²⁺ and Sr²⁺ into lead titanate shows reduction in anisotropy as well as porosity. The dielectric studies of the system as a function of temperature and frequency were carried out in the range 323?K to 773?K and 100?Hz to 1?MHz respectively. Variation of dielectric constant and loss tangent with temperature shows peaking effect near Curie temperature. Frequency dependant dielectric studies clearly show that the dielectric constant and loss tangent decrease exponentially with increased frequency.     

Millimeter-Wave Loaded Line Ferroelectric Phase Shifters

Ferroelectric loaded line phase shifters operating at millimeter waves for phased array antenna applications are presented. Phase shifters were manufactured on using Ba_0.3Sr_0.7TiO₃ thin films. The magnetron sputtering process was used to fabricate these Ba_0.3Sr_0.7TiO₃ ferroelectric films with a thickness ～1 μm. The phase shifter operating at V-band (60 GHz) demonstrated continuous phase shift up to 220 deg and figure of merit (FOM) 22 deg/dB. The phase shifter operating at Ka-band (30 GHz) showed phase shift up to 360 deg and FOM 40 deg/dB.     

Dielectric properties of (Ba1-2x Sr x Ca x )TiO3 ferroelectric ceramics

Ferroelectric ceramics of (Ba_1?2x Sr _x Ca _x )TiO₃ (0?≤?x?≤?0.30) were prepared by a routine solid-state reaction technique. Co-substitution of Sr²⁺ and Ca²⁺ for Ba²⁺ with equal mole in BaTiO₃ restrain the maximal dielectric constant K _m strongly when 0.2?≥?x?>?0. However, composition (Ba_0.4Sr_0.3Ca_0.3)TiO₃ shows the higher maximal dielectric constant. With increasing Sr and Ca content x, temperature T _m of the maximal dielectric constant K _m shifts to low temperature and all selected compositions for study exhibit a broad phase transition temperature range. The composition (Ba_0.4Sr_0.3Ca_0.3)TiO₃ presents characteristics of ferroelectric relaxor, value of K _m decreases and temperature T _m increases with increasing frequency.     

Conducting oxide electrodes for ferroelectric films

Abstract

Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuO_x) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZr_xTi_1?xO₃) was investigated using techniques such as Rutherford backscattering spectrometry, x-ray diffraction and electron spectroscopy for chemical analysis. Thin films of RuO_x and ITO were deposited on Si substrates by reactive sputtering. Either PbO or PZT (x = 0.53) films were deposited onto the conducting oxides and the specimens were annealed at various temperatures between 400°C and 700°C. Less intermixing was found in Si/RuO_x/ PZT films when compared to Si/ITO/PZT under similar processing conditions. The ferroelectric properties of PZT films on RuO_x electrodes are compared to those on Pt electrodes. The PZT films show improved fatigue properties on RuO_x electrodes.     

A comparison of mocld with PLD BaxSr1−xTiO3 thin films on LaAIO3 for tunable microwave applications

Abstract

Historically, tunable dielectric devices using thin crystalline Ba_xSr_1-x TiO₃ (BST) films deposited on lattice-matched substrates, such as LaAlO₃, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO₃ by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293° phase shift with 53 V/μm dc bias and a figure of merit of 47°/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047°. The best FWHM of these MOCLD BST films has been measured to be 0.058°.     

Microwave frequency conversion in coplanar waveguide on bilayered substrate with (Ba,Sr)TiO3 film

Abstract

Experimental and simulated spectra of microwave (30GHz) signal at the output of the coplanar waveguide (CPW) based on Ba_xSr_1-xTiO₃ film are presented and discussed. The modulation of Ba_xSr_1-xTiO₃ film dielectric constant by the application of high frequency (f ≈ 20MHz) control signal results in the generation of side frequency components in the output signal spectrum. The analysis of experimental data is performed on the basis of considering the CPW section with tunable effective dielectric constant as a phase modulator