The resistance degradation of (Ba0.5Sr0.5)TiO3 thin films

Abstract

The leakage current and dielectric properties of (Ba_0.5Sr_0.5)TiO₃(BST) thin films prepared by pulsed laser deposition (PLD) were investigated. It was found that leakage currents for positive bias voltage were higher than that for negative bias voltage, which was attributed to the lattice mismatch between bottom Pt electrode and BST thin film. The time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field can be decreased and eventually recovered by applying negative bias voltage. It was found that internal electric field near the interface can influence the capacitance of the BST thin film capacitor. An explanation for the thickness effect of BST thin films was given.     

Structure of Ferroelectric (Ba,Sr)TiO3 Thin Films for Tunable Microwave Devices

Ferroelectric (Ba,Sr)TiO₃ films have been deposited on (001) MgO single crystals by a pulsed laser deposition with oxygen background while heating the substrates. Deposited BST films exhibit epitaxial growth along (001), which are confirmed by x-ray diffraction measurement. Structure of (Ba,Sr)TiO₃ along in-plane and surface normal direction have been investigated and found to have a tetragonal distortion depend on the deposition conditions, such as oxygen pressure. Lattice parameter decreases with increasing oxygen pressure, and tetragonallity (c/a) changes from 1.005 to 0.997 as oxygen pressure increase. Interestingly, energy gap measured by FTIR decreases with decreasing oxygen pressure until it reach a certain oxygen pressure, then increases again with increasing oxygen pressure. Furthermore, microwave properties of devices measured by a HP 8510C vector network analyzer from 0.045–20 GHz suggest that the least distorted films exhibit a larger dielectric constant changes with dc bias field.     

Substrate effect on in-plane ferroelectric and dielectric properties of Ba0.7Sr0.3TiO3 thin films

Heteroepitaxial Ba_0.7Sr_0.3TiO₃ thin films were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.35 (001) (LSAT) and SrTiO₃ (001) (STO) single crystal substrates using pulsed laser deposition (PLD). X-ray diffraction characterization revealed a good crystallinity and a pure perovskite structure for films grown on both LSAT and STO substrates. The in-plane ferroelectric and dielectric properties of the films were studied using interdigital electrodes (IDE). The film grown on LSAT substrate exhibited an enhanced in-plane ferroelectricity, including a well-defined P-E hysteresis loop with the remnant polarization P _r = 10.5 μC/cm² and a butterfly-shaped C-V curve. Nevertheless, only a slim hysteresis loop was observed in the film grown on STO substrate. Curie temperature T _c of the film grown on LSAT substrate was found to be ∼105^∘C, which is nearly 70^∘C higher than that of the bulk Ba_0.7Sr_0.3TiO₃ ceramics. T _c of the film grown on STO substrate has almost no change compared to the bulk Ba_0.7Sr_0.3TiO₃ ceramics. The dielectric tunabilities were found to be 64% and 52% at 1 MHz for the films grown on LSAT and STO substrates, respectively.     

普鲁士蓝薄膜电极的制作及充放电研究

以多孔阳极氧化铝作电极活性物质的支撑体,制备了一种新型的普鲁士蓝薄膜电极。制备过程包括纯铝片在草酸溶液中阳极氧化成多孔阳极氧化铝,电化学法去多孔阳极氧化铝的阻挡层,磷酸中扩孔,无电沉积一层钯,再在孔中组装普鲁士蓝。用扫描电镜对支撑体和电极表面形貌进行了表征,用循环伏安法对电极进行了电化学研究。结果表明,这种支撑体孔隙率大于65%,组装的普鲁士蓝(PB)薄膜电极在-0.2～0.6V和0.6～1.2V两个电位窗口内呈现两对稳定的可逆峰,由这种薄膜电极组成的微型PB薄膜蓄电池,容量达到65mC/cm2,表现出良好的充放电性能。     

Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters

Abstract

A tunable phase shifter was fabricated with epitaxial Ba_0.5Sr_0.5TiO₃ (BST) thin film and gold coplanar waveguide. BST thin film of the thickness ～0.5 μm was deposited by laser ablation on the MgO(OOl) single crystalline substrate. Gold electrode of the thickness ～2 μm was prepared by the sequence of thermal evaporation, electroplating, and wet etching. Epitaxial quality of the BST thin film was confirmed by X-ray diffraction. The microwave performance of phase shifter was measured at room temperature in the frequency range of 8–12 GHz, and with applied bias voltage of up to 30 V. Effect of Mn dopant in the epitaxial films was also considered.     

Influence of Space Charge Layers on the Dielectric Properties of Ba0.6 Sr0.4TiO3 Nanostructured Thin Films

Barium strontium titanate (Ba_0.6Sr_0.4TiO₃) nanostructured thin films have been deposited on platinized silicon substrates by the sol-gel method. The as-fired films were found to be amorphous, which crystallize to cubic phase after annealing at 550°C in air for one hour. The low-frequency dielectric responses of the BST films were measured as functions of frequency range from 1 kHz to 1MHz. The thickness dependence dielectric constant of the BST thin films were measured in the temperature range from ?150°C to 150°C at 100 kHz and discussed in the light of an interfacial dead layer. All the samples showed a diffuse type phase transitions. Both the dielectric constant and loss tangent showed anomaly peaks at about 10°C, which corresponds to a tetragonal ferroelectric-to-cubic paraelectric phase transition.     

Lateral Epitaxial Growth of Ba0.6Sr0.4TiO3 Thin Films

We report a novel growth technique for epitaxial thin films by combination of selective heteroepitaxial growth and lateral homoepitaxial growth. Ba_0.6Sr_0.4TiO₃ (BST) thin films were deposited on the substrates having patterned SiO_x layers at 450°C using pulsed laser deposition. Post annealing was carried out thereafter for lateral epitaxial growth. The difference in the crystallization temperature of BST thin film on the amorphous masking layers and lattice-matched single crystalline substrate enables selective nucleation and heteroepitaxial growth from the regions of single crystalline substrates during the film deposition. Lateral homoepitaxial growth is expected from the crystallized BST thin film toward the amorphous BST on SiO_x during the post annealing process. In this paper, a study on the difference in nucleation and growth behavior of BST thin films on the amorphous masking layers and lattice-matched single crystal substrates is presented.     

Microwave frequency conversion in coplanar waveguide on bilayered substrate with (Ba,Sr)TiO3 film

Abstract

Experimental and simulated spectra of microwave (30GHz) signal at the output of the coplanar waveguide (CPW) based on Ba_xSr_1-xTiO₃ film are presented and discussed. The modulation of Ba_xSr_1-xTiO₃ film dielectric constant by the application of high frequency (f ≈ 20MHz) control signal results in the generation of side frequency components in the output signal spectrum. The analysis of experimental data is performed on the basis of considering the CPW section with tunable effective dielectric constant as a phase modulator     

Thick electrodes for high frequency high Q tunable ferroelectric thin film varactors

Abstract

Thin film barium strontium titanate (BST) shows great promise for voltage tunable dielectric devices for use at RF and microwave frequencies. An MOCVD process has been developed for production of BST, resulting in films with very low losses (as low as 0.002–0.004) and tunabilities over 50% at low operation voltages. With these values of BST loss, overall device quality factors at RF (100 MHz+) frequencies are primarily limited by losses in the thin metal electrodes, such as Pt, normally used for ferroelectric thin films. The bottom electrode in parallel plate capacitor structures is particularly challenging, since it must provide a good growth surface for BST and be stable at high (>600 °C) growth temperatures in an oxidizing atmosphere yet have high conductivity and compatibility with Si or SiO₂/Si substrates. These challenges have previously prevented use of Pt thicknesses over 0.1–0.2 urn. Our solution to this problem, involves combinations of adhesion layers at the Pt/SiO₂ interface and embedded stabilization layers to make functioning Pt bottom electrodes as thick as 2 μm. Devices with dielectric Q factors over 150 at 100 MHz (tan δ ～ 0.006 as measured and modeled by S-parameters) and overall device Q factors over 50 at 30 MHz are described. We have also inserted these devices into tunable filters, achieving tunabilities of 50% and low insertion losses (0.3 dB) at RF frequencies.     

Structure and electrical properties of Ba0.67 Sr0.33TiO3 thin film fabricated by sol-gel based composite technique

A sol-gel based novel technique is used to fabricate Ba_0.67Sr_0.33TiO₃ (BST) thin films with thickness up to several microns. In this technique, surface-modified fine BST particles are dispersed in a sol-gel precursor solution. The pH value of the precursor solution is modified to achieve high zeta potential for the dispersed powder, hence a very stable and uniform slurry can be produced. The slurry is then spin-coated onto Pt/Ti/SiO₂/Si substrate, pre-heated and annealed as in conventional sol-gel process. The resulting films show well-developed dense polycrystalline structure with uniform grain distribution. The metal-BST-metal structure of the films displays good dielectric properties.     

Effect of Nb Doping on (Sr,Ba)TiO3 (BST) Ceramic Samples

The effect of doping the Sr_0.3Ba_0.7Ti_(1–5y/4)Nb _y O₃ ceramic with different concentration of Nb is studied by scanning electron microscopy (SEM), X-ray diffraction and thermoelectric analysis. It is observed that the grain size decreases as the Nb concentration increases. The critical temperature T _c has a linear decrease at a rate of 19°C/mol% of Nb. The temperature dependence of the dielectric permittivity presents strongly broadened curves, which suggest a non Curie-Weiss behavior near the transition temperature. The diffuse phase transition coefficient () was also determined and its value leads to the conclusion that the degree of disorder in the system increases with the presence of the Nb cation.     

Ceramics Materials Based on (Ba, Sr)TiO3 Solid Solutions for Tunable Microwave Devices

Structure and electrical properties at radio frequencies as well as within the 3.5–35 GHz frequency range have been investigated for ceramic samples of the (1–y)(Ba_xSr_{1 – x})TiO₃ · yMgO (BSM) system where x = 0.4–0.6; y = 0.15–0.30. For the compositions studied the bulk ferroelectrics were synthesized with the dielectric constant of 400–600 and high tunability coefficient. We indicated that the quality factor of the samples was in the range of 100–1000 within the frequency band of 3.5–35 GHz. The phase correlations and unit cell constants of the perovskite phase of the BSM samples were studied. The low loss factor and high tunability of the bulk material allowed us using the BSM ferroelectric ceramic layer for tunable accelerating structures of the Argonne Dielectric Wakefield Accelerator and for high power switches design and development for the future linear colliders.     

氮化锡负极薄膜的制备与性能研究

氮化锡是一种新型薄膜锂电池负极材料,采用射频反应磁控溅射法制备氮化锡负极薄膜,系统研究了反应溅射功率和气流比对氮化锡薄膜结构的影响,并对其充放电性能进行了研究.实验结果表明,在溅射功率75 W,N2/(N2 Ar)流量比0.5的条件下所制备氮化锡薄膜结晶度较好,表面致密具有良好的电性能,首次充放电效率超过60%,50次循环后放电比容量仍保持250 mAh/g.     

Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors

Ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films were prepared on Pt/Ti/SiO₂/Si substrates by the sol-gel process. The films were spin-coated at 2000 rpm for 30 secs and then pyrolysed for 5 mins at the temperature of 350^∘C. This coating procedure was repeated for 3, 4, 5 and 6 times to obtain BST films with different thicknesses. After coating the films with the desired repetition times, the films were finally annealed in a conventional furnace at temperatures ranging from 600^∘C to 800^∘C with a 50^∘C interval in between. The films obtained with an annealing procedure of 750^∘C were polycrystalline with the presence of an impurity BaCO₃ phase. The capacitance and leakage current were measured and used to extract information on the metal-BST interface. With the series capacitance model and modified Schottky emission equation, the thickness of the dead layers for Au/BST and Pt/BST interfaces were calculated to be less than 6 nm and 5 nm, respectively.     

Growth,Microwave Properties and Microstructure of Ba0.05Sr0.95TiO3 Thin Films

Charged defects were found to have a significant influence over the microwave properties of Ba_0.05Sr_0.95TiO₃ thin films.     

尖晶石型LiMn2O4薄膜电极的制备及电化学性质

采用溶胶-凝胶法和旋转涂布工艺,在较低的退火温度(450℃)下制备了尖晶石型LiMn2O4薄膜。XRD和AFM的结果表明:LiMn2O4薄膜为纯相尖晶石结构(Fd 3 m空间群),由粒径约为200 nm的晶粒构成。采用循环伏安和恒流充放电法对薄膜的电化学性质及锂离子扩散系数(DLi)进行了研究。薄膜电极初始放电容量为32.5μAh/cm2.μm,电极材料具有很高的可逆性和良好的充放电性能,平均DLi为1.12×10-11cm2/s。     

铁氰化钴薄膜电极去除溶液中Sr~(2+)的初步研究

电沉积方法制得CoHCF(cobalt hexacyanoferrate)薄膜,考察了薄膜电极对离子的电控离子分离性能。通过循环伏安法、计时库仑法(CA)以及电化学石英晶体微天平(EQCM)分析了溶液中CoHCF薄膜电极的离子置入机制、电活性、电化学行为以及对Sr2+离子的选择性。通过XPS测定了氧化还原状态下CoHCF薄膜组成与元素价态。结果表明,CoHCF薄膜在Sr2+溶液中具有可逆的离子交换行为,对Sr2+离子的选择性大于Mg2+离子,通过电控离子分离方法可以实现Sr2+的有效分离。     

Optimum Reflection-Type Phase Shifter Using (Ba,Sr)TiO3 Thin Film

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate (Ba,Sr)TiO₃ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB 90° branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.     

Slow Dielectric Relaxation in Pb(Zr,Ti)O3 and (Ba,Sr)TiO3 Ferroelectric Thin Films

An impedance analysis of Ni/Pb(Zr,Ti)O₃/Pt thin-film structures based on measurements at the frequencies from 100 Hz to 100 MHz, along with the data of Grazing Angles XRD, TEM and photo-electric study, is used to obtain electronic structure of the PZT thin films deposited by sol-gel method on silicone substrates. Both slow capacitance relaxation and charging/discharging currents versus time under step-voltage excitation have been studied in (Ba,Sr)TiO₃ thin films between SrRuO₃ electrodes.     

Microwave Properties of Mn Doped (Ba1 - x,Srx)TiO3Thin Films for Tunable Phase Shifter

Ferroelectric Mn doped Ba_0.5Sr_0.5TiO₃ (Mn-BST) films with/without BaTiO₃ (BT) buffer layer have been grown on (001) MgO substrates by a pulsed laser deposition to investigate electrical tunability at microwave frequencies. Structural properties and surface morphologies of the films were investigated using an X-ray diffractometer and a scanning electron microscope, respectively. Microwave dielectric properties of Mn-BST thin films with BT buffer were studied for reduction of dielectric loss and improvement of electrical tunability. Distributed analog phase shifters have been designed and fabricated on Mn-BST films with/without BT buffer layer to understand microwave dielectric properties. The differential phase shift of the phase shifter fabricated on Mn-BST film was 22° at 10 GHz with 80 V of applied dc bias voltage. In comparison, phase shifter fabricated on Mn-BST/BT multilayers exhibit 41° of differential phase shift at the same condition. This suggests that a BT buffer layer is for microwave tunable device applications. The phase shifter fabricated on Mn-BST/BT multilayers exhibit a low insertion loss (S₂₁) of ?1.1 dB, and a low return loss (S₁₁) of ?14 dB with a bias voltage of 80 V.