Tunable Voltage-Controlled Oscillator (VCO) with High Dielectric Constant BCTZ Capacitors

This paper presents a voltage-controlled oscillator (VCO) where the resonant circuit consists of a high dielectric constant Ba_0.96Ca_0.04Ti_0.84Zr_0.16O₃ (BCTZ) tunable capacitor and an inductor. The tunable capacitors are fabricated by spin-on MOD on SiO₂/Si substrate with titanium/platinum as the bottom electrode and platinum as the top electrode. The tunability of the capacitors annealed at a temperature 800°C to 900°C is 35% for an applied voltage of ±3 volts. Low frequency VCOs built with discrete bipolar junction transistors (BJTs), MOSFETs, inductors and high dielectric tunable capacitors shows a frequency tuning range from 2.52 MHz to 2.32 MHz for an applied tuning voltage of ?3 V to 0 V and for a power supply voltage of +3 V.     

Ferroelectric lens phased array antenna: An update

Abstract

The ferroelectric lens is a new type of phased array antenna. It uniquely incorporates bulk phase shifting using bulk ferroelectric ceramics to reduce the cost of the phased array. This paper presents the latest X band (8-12 GHz) results with improved ferroelectrics; the loss due to these ferroelectrics is less than 2 dB for obtaining 360° differential phase shift at 10 GHz. The antenna pattern of an interferometer built with ferroelectrics and demonstrating electronic scanning at 10 GHz is presented. A brief review of the ferroelectric lens concept is also included.     

Thin films of novel ferroelectric composites

Abstract

Composites of BSTO combined with other non electrically active oxides have demonstrated adjustable electronic properteis which can be tailored for use in various electronic devices.^[1,2] These novel composites of barium strontium titanate (BSTO) and oxide III compounds have already exhibited promising results in their ceramic form.^[3] The additive oxides modify the dielectric constant, tunability (change in the dielectric constant with applied voltage), and dielectric loss of the material. One application has been for use in phased array antennas and insertion has been accomplished into several working antenna systems.^[4] To further accommodate the frequencies required by these phased array antennas, thin films of the composites have been fabricated. Preliminary studies have indicated that thin films of such composites exhibit similar behavior as their bulk ceramic counterparts.^[5] The purpose of this study is to investigate the properties of the BSTO/oxide III based compounds in thin film form.     

Ferroelectric phase shifters and their performance in microwave phased array antennas

Abstract

Recent advances in the development of Barium Strontium Titanate ferroelectric composition has made possible reasonable performance of ferroeletric phase shifters to frequencies up to 10 GHz. These material improvements, coupled with phase shifter circuit design changes have resulted in phase shifts greater than 360 degrees with less than 6 dB insertion loss. In particular additives to the BaxSr1-_xTiO₃ composition have been shown to exhibit a consistent electrical phase shift verses DC potential over parameters of temperature and humidity. These ferroelectric material improvements and circuit design changes, included with the development of multiple ferroelectric phase shifters makes possible the fabrication of a low cost electronic scanning antenna. A single four element phase shifter was used with a one dimensional linear antenna array which was constructed on three layers and used an aperture coupled distribution technique. Individual elements of this multiple four element phase shifter were evaluated with respect to uniformity phase shift and insertion loss. The four element antenna was fed by four ferroelectric phase shifters and the phase shifters are corporately fed by the microwave source. The ferroelectric phase shifters are controlled via a dedicated microcontroller which calibrates out element phase variations and provides a real time scan capability for the antenna assembly.     

The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applications

Abstract

Metal Ferroelectric Insulator Semiconductor (MFIS) structure has been fabricated with strontium bismuth tantalate (SBT) as the ferroelectric thin film and zirconium oxide (ZrO₂) as the insulating buffer layer. SBT film was deposited by spin-on metal organic deposition (MOD) technique. ZrO₂ film was deposited by electron beam evaporation. The capacitance versus voltage characteristics(C-V) of the MFIS structure shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The C-V characteristics of MFIS structure shows memory window of 1.8 volts for a write/erase voltage of 9V at a sweep rate of 1 sec/1.8V. In order to understand the role of coercive voltage on the memory window in MFIS structures, C-V characteristics metal-ferroelectric-metal (MFM) structures with various SBT film thickness’ were also studied.     

Millimeter-Wave Loaded Line Ferroelectric Phase Shifters

Ferroelectric loaded line phase shifters operating at millimeter waves for phased array antenna applications are presented. Phase shifters were manufactured on using Ba_0.3Sr_0.7TiO₃ thin films. The magnetron sputtering process was used to fabricate these Ba_0.3Sr_0.7TiO₃ ferroelectric films with a thickness ～1 μm. The phase shifter operating at V-band (60 GHz) demonstrated continuous phase shift up to 220 deg and figure of merit (FOM) 22 deg/dB. The phase shifter operating at Ka-band (30 GHz) showed phase shift up to 360 deg and FOM 40 deg/dB.     

Ultra-high field MRI for primate imaging using the travelling-wave concept

Object

Ultra-high field (UHF) neuroimaging is usually conducted with volume transmit (Tx) and phased array receive (Rx) coils, both tightly enclosing the object. The travelling-wave (TW) concept allows a remote excitation offering more flexible experimental setups. To investigate the feasibility of primate MRI in horizontal UHF MRI, we first compared the distribution of the electromagnetic fields in an oil phantom and then verified the concept with an in vivo experiment.

Materials and methods

In the phantom experiments an in-house circularly polarized hybrid birdcage coil and a self-developed patch antenna were used for Tx and an eight-element phased array antenna for Rx. B ₁ ⁺ fields were calculated and measured for both approaches. For in vivo experiments the Rx part was replaced with an optimized three-element phased array head coil. The SAR was calculated using field simulation.

Results

In the phantom the field distribution was homogenous in a central volume of interest of about 10 cm diameter. The TW concept showed a slightly better homogeneity. Examination of a female crab-eating macaque led to homogeneous high-contrast images with a good delineation of anatomical details.

Conclusion

The TW concept opens up a new approach for MRI of medium-sized animals in horizontal UHF scanners.     

Progress in economically viable phase shifters based on thin ferroelectric films

Abstract

A considerable amount of work has been done in the area of frequency and phase agile microwave circuits employing thin ferroelectric films. The best films to date have been Ba_xSr_1-xTiO₃ (BST) grown by pulsed laser ablation. But laser ablation does not seem readily scalable for volume manufacturing, partly because the process appears limited to 5 cm diameter wafers or smaller. Another impediment to commercialization is testing. Testing is cumbersome because the devices must be inserted into a fixture to interface with coaxial launchers. And, high voltage bias tees are not commercially available to safeguard the microwave instrumentation. We have investigated alternate growth methods including MOCLD, CCVD, and sputtering and developed an on-wafer testing approach for screening phase shifters. Some of the results are reported in a companion paper. Here we report results for sputtered PLZT films on LaA1O₃. Coupled microstrip phase shifters at K-band produced a figure of merit of ≈29°/dB. This is within a factor of two of the best laser ablated BST films. The devices also had an uncharacteristically flat frequency response between 12 and 20 GHz. Considering the large lattice mismatch between LaA1O₃ and PLZT, the film crystallinity is very good as determined by XRD. Surprisingly, the films also appeared to be cubic. We also report results for CCVD Ba_0.57Sr_0.43TiO₃ on sapphire. 20 GHz phase shifters yielded a figure-of-merit of 18°/dB. Finally we report the design and performance of a coplanar-to-microstrip transition that permits the phase shifters to be tested on wafer. Devices that pass have the virtual ground probe pads diced off so the phase shifter can be integrated into a phased array. Bias is fed directly through the coplanar probes and isolated from the network analyzer by custom high voltage bias tees.     

Epitaxial Ba0.5Sr0.5TiO3 thin films for microwave phase shifters

Abstract

A tunable phase shifter was fabricated with epitaxial Ba_0.5Sr_0.5TiO₃ (BST) thin film and gold coplanar waveguide. BST thin film of the thickness ～0.5 μm was deposited by laser ablation on the MgO(OOl) single crystalline substrate. Gold electrode of the thickness ～2 μm was prepared by the sequence of thermal evaporation, electroplating, and wet etching. Epitaxial quality of the BST thin film was confirmed by X-ray diffraction. The microwave performance of phase shifter was measured at room temperature in the frequency range of 8–12 GHz, and with applied bias voltage of up to 30 V. Effect of Mn dopant in the epitaxial films was also considered.     

一种基于方向图重构机制的宽带宽视角相控阵天线

本文提出了一款风车形方向图可重构单元及其作为阵元的二维平面宽带宽视角扫描相控阵天线。所提出的单馈方向图可重构单元天线由辐射贴片、直流偏置电路以及宽带人工磁导体(Artificial Magnetic Conductor, AMC)反射面构成。其中,辐射贴片为馈电结构可重构的四个Vivaldi缝隙组成的风车形贴片,它能够通过改变PIN二极管的通断以实现宽带内四个端射方向上的波束切换。此外,将AMC反射面加载于辐射结构的后端,使得最大辐射方向由原来的端射方向调整为准端射方向,这样有利于单元天线组阵后的扫描波束能够覆盖到侧射方向。对该天线单元及其构建的8×8均匀平面相控阵天线进行了仿真与分析。仿真结果显示,所设计的阵列天线同时具备了宽带宽视角二维波束扫描性能,其在5.4 ~ 6.1 GHz的工作频带内可以实现±60°范围内的二维波束扫描。同时,阵列的增益波动小于4.3 dB,并且具有较低的旁瓣电平。     

CHARACTERISTICS OF METAL-FERROELECTRIC-INSULATOR-SILICON DEVICES USING HFSION BUFFER LAYERS

ABSTRACT

In this work, metal-ferroelectric-insulator-silicon (MFIS) devices were fabricated using HfSiON as buffer layers and their electrical properties were studied. Ultra-thin HfSiON films were fabricated by electron-beam evaporation at room temperature and post-annealed using different parameters such as temperature, time in O₂. By annealing a 2 nm-thick HfSiON film at 800°C for 60s in O₂, a negligible hysteresis loop and small equivalent oxide thickness of 2.3 nm were obtained with a corresponding leakage current density of 6.8 × 10^{? 5} A/cm² at a voltage shifted from the flat band voltage by 1 V. In the fabrication of MFIS diodes, Sr_0.8Bi_2.2Ta₂O₉ (SBT) films with 400 nm thickness were formed by chemical solution deposition. For Pt/SBT (400 nm)/HfSiON(2 nm)/Si diodes, a memory window of 0.8 V in width was observed during double capacitance-voltage sweep between +5 and –5 V. At the same time, excellent data retention properties were observed. The high and low capacitances in the hysteresis loop were well distinguishable even after 24 h had elapsed.     

Voltage-tunable terahertz metamaterial based on liquid crystal material for bandpass filters and phase shifters

ABSTRACT

In this paper, we proposed a voltage-tunable terahertz metamatrial, which is composed of the circular-ring deep-slot array fabricated by UV-LIGA process to form a controlled cavity embedded with the liquid crystal (LC). By changing the biased voltage, the transmission peak of the terahertz metamaterial can be continuously tuned within a frequency range of 38 GHz. Moreover, this metamaterial can work over a wide range of incident and polarization angle for both TE and TM waves due structure symmetry. In addition, a differential phase of 74° is obtained at 0.45 THz by tuning the biased voltage. Therefore, our results open new opportunities for the tunable THz bandpass filters and phase shifters.     

A 11×6 element pyroelectric detector array utilizing self-polarized pzt thin films grown by sputtering

Abstract

A planar multi target sputtering approach was used to deposit PbTiO₃ (PT) and Pb(Zr, Ti)O₃ (PZT) films on TiO₂/Pt bottom electrodes for the use in thin film pyroelectric IR detector arrays. PZT films with a Zr content of 28 at% (PZ28T) exhibited the best pyroelectric coefficient of typically 2×10^?4 Cm^?2K^?1. The PZ28T films have been used for fabricating a two dimensional 11×6 pixel pyroelectric detector array on Si wafers. The array pixels with a sensitive area of 280 ×280 μm² have a noise lequivalent power NEP of less than 0.7 nW at 1 Hz. It is planned to use the detector array in systems for motion detection.     

Optimization of a low jitter, 50 kV, 100 Hz triggered spark gap with high pressure gas mixtures

Recent research efforts at Texas Tech University on impulse antenna phased array has needed to develop a reliable high voltage, high repetition rate switch that will operate with ultra low jitter. An ideal jitter of a small fraction of the risetime is required to accurately synchronize the array to steer and preserve the risetime of the radiated pulse. In [1], we showed the initial test system with sub-ns results for operations in different gases and gas mixtures. This paper discusses in detail 50 kV, 100 Hz switch operations with different gases. The effects of gases and gas mixtures have on switch performance which includes recovery rate and in particular jitter will be investigated. Gases tested include, dry air, H², N², and SF₆, as well as H₂-N₂, and N₂-SF₆ gas mixtures. Switch jitter as a result of triggering conditions is discussed, also including a comprehensive evaluation of jitter as a function of formative delay in the various gases. The temperature of gas and its effects on switch jitter is also documented in this paper. A 50 Ω, 1 nF pulse forming line is charged to 50 kV and provides the low inductance voltage source to test the different gases. Triggering is provided by a solid state opening switch voltage source that supplies ~150 kV, 10 ns risetime pulses at a rep rate up to 100 Hz in burst mode. A hermetically sealed spark gap with a Kel-F - PCTFE (PolyChloroTriFluoroEthylene) lining is used to house the switch and high pressure gas.     

Microwave slot transmission lines based on ferroelectric films tunable through low bias voltage

The modifications of microwave slot transmission lines formed on the (Ba,Sr)TiO₃ ferroelectric films were investigated to realize high quality factor millimeter-wavelength devices tunable by low bias voltages. The narrow inner electrodes inserted to a slot line form the novel type of the transmission lines, which was called multislot line (MSL). The MSL short-circuited and tunable resonators were tested at frequency ∼30 GHz. The MSL phase shifter merit factor was evaluated higher than 100 degree/dB at bias voltage lower 100 V. The comparatively high quality factors of tunable MSL resonators and phase shifters evidence on real prospects of novel topology approach to the development of such microwave devices as tunable band-pass filters and electronically steerable antennas.     

Multi-feed,loop-dipole combined dielectric resonator antenna arrays for human brain MRI at 7 T

Objective

To determine whether a multi-feed, loop-dipole combined approach can be used to improve performance of rectangular dielectric resonator antenna (DRA) arrays human brain for MRI at 7 T.

Materials and methods

Electromagnetic field simulations in a spherical phantom and human voxel model “Duke” were conducted for different rectangular DRA geometries and dielectric constants ε_r. Three types of RF feed were investigated: loop-only, dipole-only and loop-dipole. Additionally, multi-channel array configurations up to 24-channels were simulated.

Results

The loop-only coupling scheme provided the highest B₁⁺ and SAR efficiency, while the loop-dipole showed the highest SNR in the center of a spherical phantom for both single- and multi-channel configurations. For Duke, 16-channel arrays outperformed an 8-channel bow-tie array with greater B₁⁺ efficiency (1.48- to 1.54-fold), SAR efficiency (1.03- to 1.23-fold) and SNR (1.63- to 1.78). The multi-feed, loop-dipole combined approach enabled the number of channels increase to 24 with 3 channels per block.

Discussion

This work provides novel insights into the rectangular DRA design for high field MRI and shows that the loop-only feed should be used instead of the dipole-only in transmit mode to achieve the highest B₁⁺ and SAR efficiency, while the loop-dipole should be the best suited in receive mode to obtain the highest SNR in spherical samples of similar size and electrical properties as the human head.

     

相控阵天线故障诊断方法研究

随着相控阵天线阵列数目的增加和机载雷达尺寸的增大,故障单元快速诊断的需求日益迫切。本文基于相控阵天线故障诊断的原理,研究了一种相控阵天线故障信号的预处理和诊断方法。首先用矩量法构建了仿真环境;其次利用小波模极大值的方法对信号进行了降噪处理,并提取了时域统计特征和小波能量特征;最后运用层次 SVM诊断方法进行分类,获得更高的准确率。实验表明,在信噪比不同的情况下,分类正确率呈现稳步提高的趋势。理论上证明该方法能够有效诊断相控阵阵元故障。     

Thick electrodes for high frequency high Q tunable ferroelectric thin film varactors

Abstract

Thin film barium strontium titanate (BST) shows great promise for voltage tunable dielectric devices for use at RF and microwave frequencies. An MOCVD process has been developed for production of BST, resulting in films with very low losses (as low as 0.002–0.004) and tunabilities over 50% at low operation voltages. With these values of BST loss, overall device quality factors at RF (100 MHz+) frequencies are primarily limited by losses in the thin metal electrodes, such as Pt, normally used for ferroelectric thin films. The bottom electrode in parallel plate capacitor structures is particularly challenging, since it must provide a good growth surface for BST and be stable at high (>600 °C) growth temperatures in an oxidizing atmosphere yet have high conductivity and compatibility with Si or SiO₂/Si substrates. These challenges have previously prevented use of Pt thicknesses over 0.1–0.2 urn. Our solution to this problem, involves combinations of adhesion layers at the Pt/SiO₂ interface and embedded stabilization layers to make functioning Pt bottom electrodes as thick as 2 μm. Devices with dielectric Q factors over 150 at 100 MHz (tan δ ～ 0.006 as measured and modeled by S-parameters) and overall device Q factors over 50 at 30 MHz are described. We have also inserted these devices into tunable filters, achieving tunabilities of 50% and low insertion losses (0.3 dB) at RF frequencies.     

一种高功率微波有源相控阵天线单元设计

根据工程需要,本文提出了一种新型高功率微波有源相控阵天线单元,通过改造同轴波导变换器结构提升了功率容量和驻波特性,在同轴探针与阶梯波导之间引入方形金属块实现阻抗匹配,在波导末端添加过渡腔和匹配槽结构,并在喇叭段加入了单脊结构改变了波导阻抗,单脊伸出口径面降低了反射系数,进一步提升了功率容量。在X波段内VSWR小于2,带宽提升为1.25GHz,功率容量为33.24kW,比常规同轴波导变换器下喇叭天线功率容量提升了230％,7×7相控阵阵面可以实现1.62MW的发射功率,具备高功率微波发射能力。阵列可实现±30°圆锥扫描,满足高功率宽角度扫描的需求。     

基于控制接口芯片的波控系统设计

根据波束控制系统对相控阵雷达天线波束的快速、准确控制要求,提出了一种基于专用可编程T/R控制接口芯片,采用具有地址识别功能的串行分布式波控技术,实现了对某SAR雷达系统的波束控制.介绍了该波控系统的设计原理和具体实现方法,并与常用的几种波控系统进行比较,在满足系统对快速布相要求的同时,有效地减少天线阵面上走线,取得良好...