Enhancing photovoltaic performance of photoelectrochemical solar cells with nano-sized ultra thin Sb2S3-sensitized layers in photoactive electrodes

Sb₂S₃-sensitized photoelectrochemical solar cells were prepared with photoactive electrodes containing thick and thin Sb₂S₃-sensitized layers, polyaniline hole conductor containing little amount of de-ionized water, and Pt counter electrodes. The device with the thin Sb₂S₃-sensitized layer shows much higher power conversion efficiency (3.78 %) than that of the device with the thick Sb₂S₃-sensitized layer (0.88 %). The FESEM and TEM images reveal that the device with the thin Sb₂S₃-sensitized layer is nanostructure, as that of the traditional quantum dot sensitized solar cell, while the device with the thick Sb₂S₃-sensitized layer is flat configuration. The photoactive electrode with the thin Sb₂S₃-sensitized layer shows higher light absorption, lower charge transfer resistance and longer electron lifetime compared with that of the one with the thick Sb₂S₃-sensitized layer, which results in higher photocurrent generation of the device.     

Influence of precursors on the morphology and performance of TiO2 photoanodes

The preparation of TiO₂ photoanodes for dye-sensitized electrochemical devices was investigated. TiO₂ precursors with different rates of hydrolysis were used to modify the microstructures of the resulting TiO₂ photoanodes. The photoelectrochemical quantum yield for electrodes prepared from citrate remained low. Acetate precursors gave rise to electrodes with high fill factors and high open circuit voltages. Titanium isopropoxide hydrolysed very rapidly, leaving a powderous, poorly compacted deposit. Photoanodes from TiCl₄ precursors exhibit high surface roughness, which is necessary for a high degree of dye adsorption. With high hydrolysis rates, isopropoxide precursors produced powdery, poorly coherent films. A composite electrode with an acetate-based substrate and TiCl₄-based surface layers appears to be a suitable compromise.     

Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition

Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property.In this work,one-dimensional Sb2S3 nanowires(NWs)with high crystallinity were grown via chemical vapor deposition(CVD)technique on SiO2/Si substrates.The Sb2S 3 NWs exhibited needle-like structures with inclined cross-sections.The lengths of Sb2S3 nanowires changed from 7 to 13 pm.The photodetection properties of Sb2S3 nanowires were comprehensively and systematically characterized.The Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet(360 nm)to near-infrared(785 nm).An excellent specific detectivity of 2.1×1014 Jones,high external quantum efficiency of 1.5×104％,sensitivity of 2.2×104 cm2W-1 and short response time of less than 100 ms was achieved for the Sb2S3 NW photodetectors.Moreover,the Sb2S3 NWs showed out-standing switch cycling stability that was beneficial to the practical applications.The high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.     

化学浴法Cu2S纳米晶薄膜的制备及其光学特性研究

利用化学浴沉积法,以EDTA为络合剂,CuSO4·5H2O和Na2S2O3为前驱体溶液制备了硫化亚铜纳米薄膜,用FESEM、XRD、光学显微镜研究了前驱体浓度、络合剂的浓度、溶液的pH值、反应温度等因素对硫化亚铜纳米薄膜的表面形貌、晶粒大小与晶体结构的影响.结果表明,在最佳的生长条件下可以制备晶粒匀一、结构致密的硫化亚铜纳米薄膜,紫外可见吸收光谱表明硫化亚铜薄膜具有一定的透光性,并对红外光有很好屏蔽的作用.     

Effect of deposition time on optical, structural and photoluminescence properties of Cd0.6Co0.4S thin films by chemical bath deposition method

Cd_0.6Co_0.4S thin films have been deposited successfully on glass plates using chemical bath deposition method at 80° C by changing the time of deposition as a controlling parameter from 10 to 30 h. X-ray diffraction measurement shows the Co substitution of cadmium sulphide (CdS) system with hexagonal structure having the average crystalline between 1.79 and 2.13 nm. Energy dispersive X-ray spectrum reveals the presence of Co in the Cd–S lattice. The change in lattice parameters is demonstrated by the crystal size, bond length, micro-strain and the quantum confinement effect. The band gap energy is varied from 2.44 to 2.66 eV by changing the deposition times from 10 to 30 h which is useful to design a suitable window material in fabrication for solar cells. The presence of functional groups and the chemical bonding is confirmed by Fourier transform infrared spectra. The presence and the major blue shift of strong blue and red bands were demonstrated by photoluminescence spectra. The intensive emission properties of the Cd_0.6Co_0.4S thin films show a great potential for use as nano-scaled optoelectronic intensive light emitters under different deposition time.     

Effect of deposition time on structural, optical and photoluminescence properties of Cd0.9Zn0.1S thin films by chemical bath deposition method

The present work investigates the effect of deposition times on the structural, optical and photoluminescence properties of Cd_0.9Zn_0.1S thin films deposited on glass substrate by chemical bath deposition method. The deposition time was varied from 30 to 90 min. The deposited films were uniform and adherent to the glass substrates and amorphous in nature. Structural, optical and photoluminescence properties of Cd_0.9Zn_0.1S thin films were studied through X-ray diffraction, energy dispersive X-ray, scanning electron microscopy, UV–Vis absorption, fourier transform infra red spectroscopy and photoluminescence spectroscopy. The average crystal size was increased from ~1.3 to 2.5 nm with increase in deposition times. The absorption of the films was increased and the absorption peak shifted to lower wavelength side when deposition time increases. The increased energy gap from 2.4 to 2.49 eV with deposition time was due to quantum size effect and better crystallization. The presence of functional groups and chemical bonding were confirmed by FTIR. PL spectra showed two well distinct and strong bands; blue band around 407–415 nm and green band around 537–541 nm due to size effect.     

Preparation of TiO2 thick film by laser chemical vapor deposition method

A TiO₂ film was prepared on Pt/Ti/SiO₂/Si substrate by a laser chemical vapor deposition method. The rutile TiO₂ film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (R _dep = 11.4 μm h^?1). At 300 K and 1 MHz, the dielectric constant (ε _r) and loss (tanδ) of the TiO₂ film were about 73.0 and 0.0069, respectively. The electrical properties of TiO₂ film were investigated by ac impedance spectroscopy over ranges of temperature (300–873 K) and frequency (10²–10⁷ Hz). The Cole–Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO₂ film was dominated by the oxygen vacancies.     

Growth of Sb2S3 single crystals by chemical vapour transport

Single crystals of antimony trisulfide have been grown by a chemical vapour transport technique using iodine as the transporting agent. Single crystals were obtained at a much lower temperature when antimony and sulfur in the stoichiometric ratio were taken as the source along with iodine. However when polycrystalline antimony trisulfide was taken as the source with iodine, single crystals were not obtained even at the melting point of Sb₂S₃. This observation has been explained on the basis of bond energy values.     

Preparation and characterization of ZnS thin films by the chemical bath deposition method

ZnS thin films prepared on quartz substrates by the chemical bath deposition (CBD) method with three type temperature profile processes have been investigated by X-ray diffraction, scanning electron microscope, energy dispersive X-ray analysis and light transmission. One is a 1-step growth process, and the other is 2-steps growth and self-catalyst growth processes. The surface morphology of CBD-ZnS thin films prepared by the CBD method with the self-catalyst growth process is flat and smooth compared with that prepared by the 1-step and 2-steps growth processes. The self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement in crystallinity of ZnS thin films prepared by CBD. ZnS thin films prepared by CBD method with self-catalyst growth process can be expected for improvement in the conversion efficiency of Cu(InGa)Se₂-based thin film solar cells by using it for the buffer layer.     

化学水浴中氨浓度对沉积ZnS薄膜的影响

用化学水浴法在玻璃衬底上沉积ZnS薄膜。采用XRD、SEM、nkd-薄膜分析系统对薄膜的形貌、结构和光学性能进行了分析，结果表明：当氨浓度〈1．50mol／L，可获得白点较少、平整性较好的非晶ZnS薄膜，在红移方向上很长的波段内透过率较好，可达95％以上，禁带宽度为3．81eV，折射率随波长的增加而减小，从2．32变化到1．92。有关化学水浴ZnS薄膜折射率的报道极少；当氨浓度〉1．50mol／L时，薄膜白点增多，易龟裂和剥落，结构是立方闪锌矿。     

Optical study of zinc blend SnS and cubic In2S3:Al thin films prepared by chemical bath deposition

Multilayers of zinc blend SnS crystalline thin film have been deposited onto glass substrates by a chemical bath deposition (CBD) method. The envelope method, based on the optical transmission spectrum taken at normal incidence, has been successfully applied to determine the layer thickness and to characterize optical properties of thin films having low surface roughness. Optical constants such as refractive index n, extinction coefficient k, as well as the real (??_r) and imaginary (??_i) parts of the dielectric constant were determined from transmittance spectrum using this method. Obtained low value of the extinction coefficient in the transparency domain is a good indication of film surface smoothness and homogeneity. To perform the heterojunction structure based on SnS absorber material, cubic In₂S₃:Al was deposited on SnO₂:F/glass as window layer using CBD with different aluminum content. Optical properties of these films were evaluated.     

Optical and structural properties of Mg doped ZnO thin films by chemical bath deposition method

The chemical bath deposition method has often been employed to successfully deposit pure and Mg doped ZnO thin films on a glass substrate. The impact of Mg creates a strained stress in ZnO films affecting its structural and optical properties. XRD patterns revealed that all thin films possess a polycrystalline hexagonal wurtzite structure and Mg doped ZnO thin films (002) plane peak position is shifted towards a lower angle due to Mg doping. From the SEM image, it is understood that the Mg doped ZnO thin films are uniformly coated and are seen as dense rods like pillers deposited over the film. The energy dispersive X-ray analysis confirmed the presence of Mg in doped ZnO thin films. The transmittance spectra exhibit that it is possible for Mg doping to enhance ZnO thin films. The optical energy gap of the films was assessed by applying Tauc’s law and it is observed to show an increasing tendency with an improvement in Mg doping concentrations. The optical constants such as reflectance, index of refraction, extinction coefficient and optical conductivity are determined by using transmission at normal incidence of light by using wavelength range of 200–800 nm. In PL spectra, the band edge emission shifted to the blue with increasing amount of Mg doping.     

Fabrication and characterization of CuInS2 films by chemical bath deposition in acid conditions

Non-crystalline copper indium disulphide (CuInS₂) thin films had been deposited on ITO glass by chemical bath deposition (CBD) in acid conditions. Then polycrystalline CuInS₂ films were obtained after sulfuration in sulfur atmosphere at 450 °C for 1.5 h. The films had been characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM), Raman scattering measurements and energy dispersive X-ray analysis (EDX). The optical and electrical property of the thin films was also measured. The results showed that the pure, flatness, and well crystallized CuInS₂ thin films with good electrical and optical property had been obtained, meaning that the chemical bath deposition in acid conditions is suitable for the deposition of CuInS₂ thin films.     

化学气相沉积制备V_2O_5-WO_3/TiO_2催化剂及表征

以蜂窝堇青石为基体,采用化学气相沉积技术结合浸渍工艺制备出V2O5-WO3/TiO2脱硝催化剂,通过SEM、BET、XRD和EDS完成载体以及催化剂微观结构和成分表征,并利用活性评价装置测试了催化剂NO脱出率。试验结果表明,化学气相沉积技术制备的载体表面为锐钛矿型TiO2,其颗粒聚集成团块状,BET为62.73m2/g,平均孔径为9.8nm。制备的V2O5-WO3/TiO2催化剂孔结构规律与TiO2载体相似,V2O5在TiO2载体上无定形态单层分散,微量V2O5在微区长大成针状,宽度100nm;在350℃、4000h-1、n(NH3)/n(NO)=1时,催化剂NO脱出率ηNO达到96.7%。     

Nanostructured ZnO network films deposited on Al2O3 substrates by chemical bath deposition

Nanostructured ZnO network films have been fabricated on Al₂O₃ substrates by the combination of chemical bath deposition and thermal decomposition process. Layered basic zinc nitrate (LBZN) network films were deposited on the Al₂O₃ substrates with LBZN crystal seeds in methanol solution of zinc nitrate hexahydrate and hexamethylenetetramine. The LBZN precursor films were then transformed into nanostructured ZnO films by heating at 260 °C in air. During the thermal decomposition process abnormal exothermic heat effect was observed at 200-210 °C and CH₃ groups were found in the as-deposited films. We propose that methanol molecules are integrated in the LBZN films forming LBZN-CH₃OH complex and that the heat effect comes from the exothermic release of the methanol.     

Room temperature synthesis and characterization of polythiophene thin films by chemical bath deposition (CBD) method

Polythiophene thin films were deposited successfully on glass substrate by chemical bath deposition method using FeCl₃ as an oxidant and chloroform as solvent. The effect of oxidant concentration on the properties of polythiophene thin films was studied. The surface morphology was influenced by oxidant concentration and deposition time. The oxidation concentration also strongly affects the optical properties of the polythiophene thin films. The transmittance decreases while the absorption, band gap and refractive index increases due to increase in oxidant concentration.     

Superlattice formation of (Ba,Sr)TiO3 prepared by metal-organic chemical vapor deposition

Dielectric superlattices of (Ba_0.5Sr_0.5)TiO₃ (BST) grown by a metal-organic chemical vapor deposition (MOCVD) have been studied by transmission electron microscopy (TEM). A selected area of electron diffraction patterns clearly show satellite spots that indicate the formation of superlattice of BST film. A superlattice distance is 6.75Å, that is, 2.4 times of (110) BST plane distance. A high-resolution TEM study revealed that the superlattices were induced by the periodic composition modulation of Ba and Sr atoms. A possible atomic arrangement model of the superlattice was proposed by a simulation with a national center for electron microscopy simulation system (NCEMSS).