退火后应变Ga1-xlnxNyAs1-y/GaAs量子阱特性

引入N原子周围In原子数r自建模型,研究退火对GaInNAs/GaAs量子阱能带结构和应变效应的影响,计算退火前后量子阱的光增益谱,讨论了退火温度和量子阱阱宽对光增益峰值蓝移的影响。结果表明退火使带隙发生蓝移,光增益峰值向短波方向移动,退火温度T越高,相同组分条件下的峰值蓝移越大。减小合金中N含量以及增加量子阱阱宽可减少增益峰值蓝移,从而降低退火带来的不利影响。     

用于可见光通信的GaN基LED研究进展

发光二极管(LED)的频率响应特性以及在大电流下的发光特性是其在可见光通信中应用的关键性能指标。对于GaN基的LED,减小InGaN/GaN多量子阱中的内建电场,增大空穴的注入,能有效提高大电流下的内量子效率,减弱在大电流情况下出现的效率下降。通过降低与结电容效应相关的RC时间常数以及载流子自发辐射复合寿命,可改善LED的频率响应特性,进一步提高LED的调制带宽。     

一种具有GaInAsN/GaAs量子阱结构的三结太阳能电池的设计

该文使用传输矩阵法分析了GaInAsN/GaAs量子阱对电子的透射情况,并使用crosslight软件对GaInAsN/GaAs量子阱太阳能电池的伏安特性进行了数值模拟和分析。初步讨论了量子阱的阱宽和垒厚的变化对量子阱电池伏安特性的影响.模拟结果发现垒厚32nm、阱宽7nm的量子阱光伏性能表现良好。作为有源区,当将该量子阱加入到GaAs子电池中,InGaP/GaAs/Ge三结电池在AM0下的短路电流密度达到19.81mA/cm2,比未使用量子阱有源区的三结电池提高了20%。     

应变GaN量子点中激子态的研究

利用有效质量方法和变分原理,考虑内建电场效应和量子点的三维约束效应,研究了约束在GaN/AlxGa1-xN圆柱形量子点中的激子特性与量子点的结构参数以及势垒层中Al含量之间的关系.结果表明:对给定大小的量子点,随其高度的增加激子结合能出现一最大值,此时载流子被最有效的约束在量子点内;内建电场使量子点的有效带隙减小,电子、空穴产生明显分离,从而影响量子点的光学性质.理论计算的光跃迁能和实验结果一致.     

Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光

由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si1-xGex虚衬底上外延应变补偿的Si/S1-yGey(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上。在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%。在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性。     

AlGaAsSb/InGaAsSb多量子阱结构的光致发光谱

用固态源ＭＢＥ技术生长了ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ多量子阱材料,研究了通过改变多量子阱ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ中的结构参数,如多量子阱中ＩｎＧａＡｓＳｂ的阱宽,ＡｌＧａＡｓＳｂ的垒宽及垒层中Ａｌ组分和阱层中的Ｉｎ组分,多量子阱中的阱数等,来提高ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ多量子阱的ＰＬ强度。     

大功率半导体激光器腔面镀膜的理论研究

从平面波假设出发推导了多层薄膜的特性矩阵，得到了膜系的反射率计算公式。研究了腔面反射率对大功率半导体激光器的外量子效率、阈值增益和输出功率比的影响，并给出了整个膜系反射率随膜层的光学厚度、折射率差及其层数的变化趋势。该模型对半导体激光器的腔面膜层设计具有实际的指导意义。     

500℃下利用UHV/CVD在Si衬底上直接生长近平面Si0.5Ge0.5层

利用UHV/CVD系统,在一个相对较低的温度500℃下,研究了Si1-xGex层中的Ge含量与生长条件之间的关系,此时的Si1-xGex层处于一种亚稳的状态.并直接在Si衬底上生长制备了10个周期的3.0 nm-Si0.5Ge0.5/3.4 nm-Si多量子阱.拉曼谱、高分辨显微电镜和光荧光谱对其结构和光学性能进行的表征表明这种相对较厚的Si0.5Ge0.5/Si多量子阱结构基本上仍是近平面生长的,内部没有位错,其在电学和光学器件上具有潜在的应用.     

LP-MOCVD生长大功率InGaAsP/GaAs量子阱激光器

设计并利用LP－MOCVD生长了InGaAsP/GaAs分别限制单量子阱结构,采用无铝的InGaP做光学包层。腔面未镀膜情况下,测试10支条宽100μm,腔长1mm的激光器样品,连续输出功率超过1W,阈值电流密度为330～490A/cm2,外微分量子效率为55％～78％,中心发射波长为(808±3)nm。     

量子阱激光器计算机辅助分析系统

介绍了一个量子阱激光器计算机辅助分析系统MQWCAD,它是一种新型的多校块交互访问式自洽系统,集成了能带工程计算、异质结激光器二维模拟、量子阱激光器二维模拟等几个适用工具。MQWCAD以一种新颖的设计思想为基础,将多层结构描述、自动剖分、薛定谔方程完全解处理阱区载流子分布、集成能带分析及自洽迭代等几种新技术应用到系统中,使模拟更为方便、精确和快速。该系统用于模拟各种半导体材料体系的异质结及量子阱激光器,优化设计参数,探索新的器件结构。     

Optical gain of 1.3 /spl mu/m GaAsSbN/GaAs quantum well lasers

Optical gain of 1.3 mum GaAsSbN/GaAs quantum well (QW) structure is investigated using the multiband effective mass theory. The results are compared with those of 1.3 mum InGaNAs/GaAs and GaAsSb/GaAs QW structures. The optical gain of the GaAsSbN/GaAs QW structure is found to be similar to that of the InGaAsN/GaAs QW structure. In contrast, GaAsSbN/GaAs and InGaNAs/GaAs QW structures show significantly larger optical gain than the GaAsSb/GaAs QW structure. This is mainly attributed to the fact that the former has a larger optical matrix element than the latter. In addition, GaAsSbN/GaAs and InGaNAs/GaAs QW structures have much smaller threshold current density than the GaAsSb/GaAs QW structure. This is because the Auger recombination current density gives dominant contribution to the threshold current density and the former has smaller threshold carrier density than the latter. On the contrary, the threshold current density of the GaAsSbN/GaAs QW structure is shown to be similar to that of the InGaAsN/GaAs QW structure     

Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology

In this paper, we compare theoretically, as well as experimentally, four constructions of quantum well (QW) AlGaAs/InGaAs/GaAs semiconductor lasers: one standard, simple separate confinement heterostructure (SCH) laser and three different GRIN SCH (graded index separate confinement heterostructure) lasers. By optimising the construction and technology of epitaxy, an increase of laser quantum efficiency was obtained for the wavelength 980 nm. The highest measured quantum efficiencies approach those predicted theoretically. The recommended growth conditions ensuring obtaining the best laser parameters are given.     

Hole transport due to shallow acceptors along boron doped SiGe quantum wells

Lateral conductivity and magnetotransport measurements were performed with SiGe single quantum well (QW) structures doped with boron in the QW. The conductivity at low temperatures (T) is shown to be due to hopping over B centers while at higher T, it is due to two-stage excitation: thermal activation of holes from the ground to strain-split B states are followed by hole tunneling into the valence band. The tunneling is due to a potential drop across the QW which is due to hole capture at surface states of the Si cap layer making the surface charged. The external potential applied across the QW essentially changes the lateral conductivity as well as the activation energy. The calculations of band profile, free carrier concentration in the QW and acceptor population, as well as an effect on the transverse electric field were carried out taking into account the charging of surface states.     

980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

980 nm InGaAs/GaAs separate confinement heterostructure （SCH） strained quantum well （QW） laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient. The highest CW （continuous wave） output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.     

理论研究垂直腔半导体光放大器脉冲放大特性

从速率方程和薄膜光学理论出发,对垂直腔半导体光放大器(Vertical Cavity Semiconductor Optical Amplifiers,简称VCSOAs)在脉冲工作情况下的动态增益进行了数值模拟.在计算中考虑了载流子和光强沿光轴方向的不均匀性,以及腔内介质折射率的不连续性对光波传输的影响.详细分析了反射模式下VCSOA在脉冲通过时载流子密度和瞬时增益的变化、输出光脉冲的畸变以及抽运光功率、分布布拉格反射镜(Distributed Bragger Reflector,简称DBR)周期数、输入脉冲能量以及脉冲宽度等参量对脉冲放大中的能量增益的影响.结果表明,能量增益随抽运光功率增大而增加;在峰值功率一定时输入脉冲宽度的增加将减小能量增益;输入脉冲能量的增加也会引起能量增益的下降,而适当减少顶部DBR的周期数可以改善这种脉冲放大的能量增益饱和特性.     

Simulation of double quantum well GalnNAs laser diodes

The simulation of double quantum well (QW) GalnNAs ridge-waveguide (RW) lasers is performed over a wide range of cavity lengths and operating temperatures using a comprehensive in-house 2D laser simulator that takes into account all of the major device physics, including current spreading, capture escape processes, drift diffusion in the QW, 2D optical modes and fully resolved lasing spectra. The gain data used by the simulator were fitted to experimental gain spectra measured by the segmented contact method. The gain model includes the band-anticrossing model for the conduction band and a 4 x 4 kldrp model for the valence band. Using a carrier density-dependent and temperature-dependent linewidth broadening parameter, a good fit with experiment over a temperature range of 300-350 K was obtained. A Shockley-Read-Hall (SRH) lifetime of 0.5 ns and an Auger recombination coefficient of 1 x 10^-28 cm⁶/ s, were extracted from the calibration of the laser simulator to experimental device characteristics of broad-area (BA) devices. Using the same set of parameters for BA devices, except for a reduced SRH lifetime of 0.45 ns underneath the etch, 2D simulation results were found to agree well with the measured RW laser operating characteristics. The impact of the various recombination processes in the RW laser at threshold has also been identified using the calibrated laser simulator.     

Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

We report on carrier dynamics in the green InGaN/GaN light emitting diodes grown by metal organic chemical vapor deposition. Two LEDs with the same structures grown on pattern sapphire substrates with different surface roughnesses were prepared for comparisons (samples A and B). Sample A had the smoother sapphire surface than sample B. Time-resolved four-wave mixing has been performed at room temperature using 351 and 420 nm picosecond pulses for excitation. The determined diffusion coefficient in the upper InGaN QWs of sample B was twice smaller than that in sample A. The latter observation of better carrier confinement in sample B correlated with higher light emission efficiency in it.     

An alternative approach to the electronic-structure calculation of crescent-shaped GaAs/AlGaAs quantum wires

An alternative approach for calculating the bound states energies in crescent-shaped GaAs/AlGaAs quantum wires is proposed. We consider carrier confinement in the X and Y directions separately, taking advantage of the fact that the crescent width is much smaller than its length, and varies slowly along the Y direction. The tight-binding method is used in the calculation of the confinement energies in the individual quantum wells, taking into account the real shape of the crescent as well as of the confinement potential along the Y direction.     

Wavelength tuning in optically mode-locked semiconductor fiber ring lasers with linearly chirped fiber Bragg gratings

We demonstrate wavelength tuning in single-wavelength and multiwavelength semiconductor fiber ring lasers that are mode locked with an optically injected control signal. A semiconductor optical amplifier is used to provide gain as well as to function as an optically controlled mode-locking element. Linearly chirped fiber Bragg gratings--single or superimposed--are used to define the lasing wavelengths as well as to provide wavelength tunability and allow for multiwavelength operation. We obtain pulses of tens of picoseconds in duration when we inject a sinusoidal optical control signal into the laser cavity, and we can tune the lasing wavelength(s) over the reflection bandwidth(s) of the grating(s) by simply changing the frequency of the injected control signal.     

Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films

Raman scattering characteristics of intrinsic and doped hydrogenated nanocrystalline silicon films which prepared by a plasma-enhanced chemical vapor deposition system are investigated. Results indicate that Raman spectra depend intensively on microstructure and impurity in the films. Taking into account phonon confinement effect and tensile strain effect in Si nanocrystals, peak redshift of measured transverse optical modes in Raman spectra of intrinsic films can be well interpreted. With respect to Raman scattering from doped samples, besides phonon confinement effect, the peak of experimental transverse optical mode further downshifts with heightening doping level, which can be primarily assigned to impurity effect from doping. In addition, the increase in relative integral intensity ratio of transverse acoustic branch to transverse optical mode and that of longitudinal acoustic branch to transverse optical mode with decreasing mean dimension of nanocrystals and heightening doping ratio, respectively, can be ascribed to disorder. Furthermore, at the same doping level, incorporation of boron can induce higher disorder than incorporation of phosphorus in nc-Si:H films.