A novel associative approach for fault-tolerant MOS RAMs

A novel associative iterative approach providing unique advantages is developed to increase yield of large capacity, 16K bit-1M bit, semiconductor random access memories. The circuit implementation has minimum effect on performance and on the original design of the memory. The increase in access time and power dissipation is less than 2 and 0.6 percent, respectively. The flexibility of this concept allows for organization of redundant elements in blocks, rows, columns, clusters, or bits and to locate the redundancy anywhere on the chip. A wide range of programmable elements, e.g., fusable links, laser programmable cells, and content addressable memory units, are applicable. The amount of spare elements can be optimized to achieve a maximum effective yield of as much as 85 percent. The increase in active circuit area is a function of defect density and memory capacity. The redundancy control and spare memories can be added to memories as modules without modifications of the original designs. The circuits discussed here are for CMOS/SOS radiation hardened application; the concepts, however, can be applied to bulk silicon MOS technologies as well.     

A Built-In Redundancy-Analysis Scheme for Random Access Memories with Two-Level Redundancy

Built-in self-repair (BISR) technique is a popular method for repairing defective embedded memories. To allocate redundancy efficiently, built-in redundancy-analysis (BIRA) component is a core component in a BISR design. This paper presents a BIRA scheme for RAMs with two-level redundancy, i.e., spare rows, spare columns, and spare words. A compressed local bitmap is used to collect faulty information for redundancy allocation. Then an efficient redundancy analysis algorithm based on the compressed local bitmap is proposed to allocate redundancy. Experimental results show that the repair rate (the ratio of the number of repaired memories to the number of defective memories) of the proposed redundancy analysis algorithm approaches to that of the exhaustive search algorithm. Also, area overhead of the proposed BIRA scheme is low. It is only about 2% for an 8K × 64-bit RAM with three spare rows, three spare columns, and two spare words.     

Schemes of dynamic redundancy for fault tolerance in random accessmemories

For large memory capacities, stand-by systems usually need a considerable amount of redundant hardware, not only because of the spare components, but for storing fault conditions and for carrying out the necessary reconfiguration. As alternatives, two methods of implementing fault tolerance by means of dynamic redundancy in random-access memories are proposed which allow the treatment of memory-chip faults at the interface of the memory. The memory reliability for both approaches is estimated by a simple model. These methods improve the reliability considerably compared to conventional memory fault tolerance methods, and the size of the units of reconfiguration can be tailored to the demands of the system user     

Power reduction methods for NMOS dynamic random access memories

Power reduction methods for NMOS dynamic random access memories are proposed which reduce power dissipation. As the bit density increases in NMOS dynamic random access memories the power dissipation increases. A major consideration in the design of megabit dynamic random access memories is the power supply voltage. The power supply voltage mainly depends upon the following factors: power dissipation; reliability, such as high field effects due to small device size; memory cell operating margin. Power dissipation in decoders and 1 megabit NMOS dynamic random access memory chips are discussed. The basic properties of the proposed methods and a prototype VLSI implementation are discussed. In order to meet user power supply requirements, the proposed power reduction methods are useful for future megabit NMOS dynamic random access memories.     

Cryoelectric hybrid system for very large random access memory

The recent introduction of structured cells characterized by no cell-to-cell interaction, adequate sense signal, and array tolerance under repetitive worse-case disturb evaluation and coincident current operation, has made possible new systems approaches. A coincident current "hybrid" (word-bit) system utilizing room temperature decoders and structured loop cell arrays was designed to satisfy the criteria pertinent to a very large random access cryoelectric memory. Besides offering the advantage of an early realization of a cryoelectric memory, compared to previous systems advanced, several other benefits are realized: 1) low electronics cost, especially in large systems sizes, 2) low heat load, and 3) potential plane yield improvement through redundancy techniques. Although a disadvantage is the large number of interconnections, analysis shows that the overall memory cost can be minimized through proper substrate design. The technology required by the hybrid system embodies present art, and very large random access cryoelectric memories employing hybrid organization and loop cell arrays appear to be feasible.     

Built-in redundancy analysis for memory yield improvement

With the advance of VLSI technology, the capacity and density of memories is rapidly growing. The yield improvement and testing issues have become the most critical challenges for memory manufacturing. Conventionally, redundancies are applied so that the faulty cells can be repairable. Redundancy analysis using external memory testers is becoming inefficient as the chip density continues to grow, especially for the system chip with large embedded memories. This paper presents three redundancy analysis algorithms which can be implemented on-chip. Among them, two are based on the local-bitmap idea: the local repair-most approach is efficient for a general spare architecture, and the local optimization approach has the best repair rate. The essential spare pivoting technique is proposed to reduce the control complexity. Furthermore, a simulator has been developed for evaluating the repair efficiency of different algorithms. It is also used for determining certain important parameters in redundancy design. The redundancy analysis circuit can easily be integrated with the built-in self-test circuit.     

A 64-kbit block addressed charge-coupled memory

Describes the design and performance of a 64-kbit (65536 bits) block addressed charge-coupled serial memory. By using the offset-mask charge-coupled device (CCD) electrode structure to obtain a small cell size, and an adaptive system approach to utilize nonzero defect memory chips, the system cost per bit of charge-coupled serial memory can be reduced to provide a solid-state replacement of moving magnetic memories and to bridge the gap between high cost random access memories (RAM's) and slow access magnetic memories.     

A 64-kbit block addressed charge-coupled memory

This paper describes the design and performance of a 64-kbit (65 536 bits) block addressed charge-coupled serial memory. By using the offset-mask charge-coupled device (CCD) electrode structure to obtain a small cell size, and an adaptive system approach to utilize nonzero defect memory chips, the system cost per bit of charge-coupled serial memory can be reduced to provide a solid-state replacement of moving magnetic memories and to bridge the gap between high cost random access memories (RAM's) and slow access magnetic memories. The memory chip is organized as 64K words by 1 bit in 16 blocks of 4 kbits. Each 4-kbit block is organized as a serial-parallel-serial (SPS) array. The chip is fully decoded with write/recirculate control and two-dimensional decoding to permit memory matrix organization with X-Y chip select control. All inputs and the ouput are TTL compatible. Operated at a data rate of 1 MHz, the mean access time is about 2 ms and the average power dissipation is 1 µW/bit. The maximum output data rate is 10 MHz, giving a mean access time of about 200 µs, and an average power dissipation of 10 µW/bit. The memory chip is fabricated using an n-channel polysilicon gate process. Using tolerant design rules (8-µm minimum feature size and ±2-µm alignment tolerance) the CCD cell size is 0.4 mil²and the total chip size is 218 × 235 mil². The chip is mounted in a 22-pin 400-mil wide ceramic dual in-line package.     

Reliability Modeling and Analysis of Fault-Tolerant Memories

A memory array reliability model is developed that can be applied to a wide range of memory organizations including random-access memories (RAM) and read-only memories (ROM). The model is particularly useful for computing the reliability of fault-tolerant memories that employ techniques such as hardware redundancy, error-correcting codes, and software error-correcting algorithms. The model accommodates the effect of faults masked by data. Reliability models that incorporate the array model are given for a simplex RAM, an N-modular-redundant RAM, a spared RAM, a single-error-correcting RAM, a multiple-error-correcting RAM, and a ROM. Reliability characteristics of these memories are compared. The results suggest that memories with error-correcting capability and spare bit-planes provide the best reliability. Memories with sparing at the array level are next best followed by NMR and simplex organizations. ROM reliability is shown to be more optimistic when masked faults are considered.     

Yield enhancement techniques for 3-dimensional random access memories

As the advances of process technology keep growing, three-dimensional (3D) integration with through silicon vias is a new alternative solution to extend Moore’s law especially for random access memories (RAMs). In general, the reliability and fabrication yield of the traditional 2D memories can be improved by the incorporation of some form of redundancy. However, for 3D integration, the scenarios for the repair process are totally different. The redundancy exclusively added in a memory tier can also be reused to repair defects in the other memory tier after the bonding process. That is, the concept of inter-tier redundancy can be exploited to further increase the yield of 3D memories. Die-to-die and die-to-wafer bonding can be adopted. In this paper, we propose an efficient die-stacking flow and the corresponding built-in self-repair architectures for yield enhancement of 3D memories. The matching problem for die stacking can be converted into a bipartite graph maximal matching problem and the traditional algorithm can be used to solve this problem. Experimental results show that the proposed stacking flow, algorithm, and the corresponding BISR (built-in self-repair) architecture can improve fabrication yield significantly.     

A built-in self-repair design for RAMs with 2-D redundancy

This brief presents a built-in self-repair (BISR) scheme for semiconductor memories with two-dimensional (2-D) redundancy structures, i.e., spare rows and spare columns. The BISR design is composed of a built-in self-test module and a built-in redundancy analysis (BIRA) module. The BIRA module executes the proposed RA algorithm for RAM with a 2-D redundancy structure. The BIRA module also serves as the reconfiguration unit in the normal mode. Experimental results show that a high repair rate (i.e., the ratio of the number of repaired memories to the number of defective memories) is achieved with the BISR scheme. The BISR circuit has a low area overhead-about 4.6% for an 8 K /spl times/ 64 SRAM.     

8192-bit block addressable CCD memory

Design data and experimental characteristics are given on an 8192-bit n-channel charge-coupled memory device, intended for applications requiring shorter latency than ordinary MOS shift registers or fixed-head disks and at potentially lower cost than either MOS shift registers or random-access memories. This was achieved by dividing the array into 32 memory blocks of 256 bits each, with addressable, random access to any block, permitting average latency of approximately 100 /spl mu/s. A two-level overlapping polysilicon gate process was used, with conservative design tolerances. Power dissipation on-chip, plus capacitive drive power during data access at 1 MHz is approximately 250 mW, and less than 5 mW during standby at 20 kHz with data retention.     

Cost/performance perspectives of paging with electronic and electromechanical backing stores

An analysis is made of the cost/performance effectiveness of virtual memory systems employing paging disks or drums and those employing electronic backing stores such as charge coupled devices (CCD), MOS shift registers, or bubbles. The analysis is based on a multiprogrammed job stream and a simplified queuing model employing page-fault rates suitable for a variety of multiprogrammed environments. Smaller memory systems and single job programming are also considered. It is shown that memory access plus page transfer time is a critical parameter, in addition to cost. Curves are generated for a variety of job environments in which the cost/performance effectiveness of two-level memory hierarchies employing electronic backing stores is compared to that of systems employing paging drums. Competitive prices per bit are determined for a number of system environments. The analysis clearly demonstrates that in many problem environments, the electronic backing store will replace the traditional paging drum or disk if the cost per bit is significanfly less than the main memory cost per bit as projected. Disk and tape memories can be expected to continue as the dominant memories for bulk storage in the near future because of their already small and diminishing costs per bit.     

Design and Realization of a Two-Level 64K Byte CCD Memory System for Microcomputer Applications

Charge coupled device (CCD) memory technology offers potential economic advantages over semiconductor random-access memory technology. However, the limitations incurred by the serial nature of CCD's have previously restricted their application to computer mainframe memories. The 64 kbyte CCD memory system described in this paper demonstrates the feasibility of CCD memory technology for moderate size memory systems applicable to microcomputer systems. Design objectives included low cost, adequate performance, reliable operation, small size, and low power consumption as well as simple interfacing to standard microprocessors. A simple two-level organization employing a random access memory (RAM) to buffer the serial CCD memory was used to improve the memory system performance and to simplify the interfacing of microcomputers. It is anticipated that the memory system can be easily modified to use 64 kbit and larger CCD memory devices as these become available. Furthermore, the memory system control logic could be integrated on a single large-scale integration (LSI) chip, thereby facilitating the fabrication of relatively large and economical memory systems with a low component count.     

Design and analysis of defect tolerant hierarchical sortingnetworks

A hierarchical modular sorting network which achieves a balance in area-time cost between the odd-even transposition sort and the bitonic sort is presented. It consumes less hardware than a single-level odd-even sorter and reduces the wire complexity of the bitonic sorter in VLSI or WSI (wafer-scale integration) implementation. The optimal number of levels in the hierarchy is evaluated, and the sorting capability of each level is derived so as to minimize the hardware overhead. The hierarchical sorting network is very regular in structure and hence defect tolerance capability can be included more easily than in any existing sorting network with the same time complexity. Redundancy is provided at every level of the hierarchy. Hierarchical reconfiguration is performed by replacing the defective cells at the bottom level with the spare cells first and repeating the process at the next higher level if there is not enough redundancy at the current level. Yield analysis is performed to demonstrate the effectiveness of the approach     

Dynamic Data Migration in Hybrid Main Memories for In‐Memory Big Data Storage

For memory‐based big data storage, using hybrid memories consisting of both dynamic random‐access memory (DRAM) and non‐volatile random‐access memories (NVRAMs) is a promising approach. DRAM supports low access time but consumes much energy, whereas NVRAMs have high access time but do not need energy to retain data. In this paper, we propose a new data migration method that can dynamically move data pages into the most appropriate memories to exploit their strengths and alleviate their weaknesses. We predict the access frequency values of the data pages and then measure comprehensively the gains and costs of each placement choice based on these predicted values. Next, we compute the potential benefits of all choices for each candidate page to make page migration decisions. Extensive experiments show that our method improves over the existing ones the access response time by as much as a factor of four, with similar rates of energy consumption.     

Yield optimization of modular and redundant multimegabit RAMs: astudy of effectiveness of coding versus static redundancy using thecenter-satellite model

To determine the optimal redundancy organization for yield enhancement, redundant and modular memories are analyzed using the center-satellite model. The model suggests that the degree of redundancy for a memory module be determined according to its distance from the periphery of the wafer since the defect density increases as the periphery is neared. Analytical expressions are formulated for the yield of memory modules with extra rows and/or extra columns, coding, and coding with extra rows. Results from the analysis suggest that, for high levels of defect densities, coding can be more effective than simple extra rows and columns. For high levels of defect densities, coding with extra rows is shown to offer even better yield. For low levels of defect densities, though, just extra rows and columns may be sufficient for a high yield. An optimal amount of redundancy can be found to achieve the highest possible yield using the model that considers precise cluster distributions on the wafer, defects in a cluster, and the radial variation of these defects     

Memory Defect Tolerance Architectures for Nanotechnologies

Memory Built In Self Repair (BISR) is gaining importance since several years. Because defect densities are increasing in future submicron technologies, more advanced solutions may be required for memories to be produced in the upcoming nanometric CMOS process generations. Moreover, this problem will be exacerbated with nanotechnologies, where defect densities are predicted to reach levels of several orders of magnitude higher than in current CMOS technologies. For such defect densities, traditional memory repair is not adequate. This work presents several Built-In Self Repair techniques addressing memories affected by high defect densities as well as an evaluation of the area cost and yield. Statistical fault injection simulations were conducted and the obtained results show that BISR architectures can be used for future high defect technologies, providing close to 100% memory yield, by means of reasonable hardware cost. Thus, the extreme defect densities that many authors predict for nanotechnologies do not represent a show-stopper, at least as concerning memories.     

Dynamic reconfiguration schemes for megabit BiCMOS SRAMs and performance evaluation

In this paper two dynamic configuration schemes are discussed for megabit BiCMOS static random access memories (SRAMs). Dynamic reconfiguration schemes allows failure detection at the chip level and automatic reconfiguration to fault free memory cells within the chip. The first scheme is a standby system approach where the I/O lines of the memory can be dynamically switched to spare bit slices in the SRAM. This scheme is implemented through a switching network at the memory interface. Every memory access is controlled by a fault status table (FST) which memorizes the fault conditions of each memory block. This FST is implemented outside the memory system. A second dynamic reconfiguration scheme for BiCMOS SRAMs is addressed through a graceful degradation approach. Basic design considerations and performance evaluation of megabit BiCMOS SRAMs using dynamic reconfiguration schemes are presented. The basic properties of the proposed schemes and a prototype VLSI chip implementation details are discussed. BiCMOS SRAM access time improvement of about 35%, chip area of 25%, and chip yield of 10% are achieved, respectively, as compared to conventional methods. A comparison of reliability improvement of 1 Mb BiCMOS SRAMs using dynamic configuration schemes is presented. These two dynamic reconfiguration schemes have considerable importance in reliability improvement when compared to conventional methods. The major advantage is that the size of reconfiguration of the system can be considerably reduced.     

SOI for digital CMOS VLSI: design considerations and advances

This paper reviews the recent advances of silicon-on-insulator (SOI) technology for complementary metal-oxide-semiconductor (CMOS) very-large-scale-integration memory and logic applications. Static random access memories (SRAMs), dynamic random access memories (DRAMs), and digital CMOS logic circuits are considered. Particular emphases are placed on the design issues and advantages resulting from the unique SOI device structure. The impact of floating-body in partially depleted devices on the circuit operation, stability, and functionality are addressed. The use of smart-body contact to improve the power and delay performance is discussed, as are global design issues