俄歇电子能谱

俄歇电子能谱(Auger Eectfon Spectroscopy简称AES)。AES技术是利用聚焦的高速电子流直接激发试样,试样原子的内壳层受激留下空穴,被外壳层电子填补,这样,释放出的能量又激发出外壳层另一个电子—俄歇电子。检测俄歇电子的能量分布及强度就可以定性和半定量确定试样的表面成分。此法对试样的破坏作用很小。     

俄歇电子能谱分析

前言这几年俄歇电子能谱装置的普及是惊人的,即使在国内也有超过一百个装置正被应用于许多不同领域。它多数和半导体器件、钢铁材料有关,可是最近在生产线路的质量管理方面也使用起来了。俄歇电子能谱装置这样地普及,有一些重要原因。若将它和其它分析法相比较而作简单的说明,则可举出下面几点。(1)是非破坏的分析方法;(2)可以得到固体表面下80以内的情报;(3)可以分析除H,He以外     

VG ESCALAB MK Ⅱ电子能谱仪扫描俄歇像的转贮

<正> 1 前言 80年代我国进口了不少英国VG公司生产的先进大型电子能谱仪,但是所配备的计算机大多数是DEC公司生产的PDP微机。该类型的微机早已被现今广为使用的IBM兼容微机所淘汰,这给此系统的维护和使用带来了很大的不便,尤其是能谱仪的测量结果是通过计算机输出的,其形式呆板、质量欠佳,且无法与第三方软件兼容。其中扫描俄歇探针(SAM)的测量结果—俄歇     

计量学的电子谱:俄歇电子能谱

Electron spectroscopy is now very popular particularly in surface analysis.Many manufacturers make their sophisticated machines,in which Auger electron spectroscopy(AES)and X-ray photoelectron spectroscopy (XPS)have been widely distributed and commonly used.Although,the electron spectroscopy is not in the category of metrology,i.e.,the SI(system international).     

场发射俄歇电子能谱显微分析

场发射俄歇电子能谱的显微分析是一项新的分析技术,可对微尺度样品进行点、线、面的元素组分及元素化学态分析。本文简要介绍这项新技术的功能原理和在微电子器件检测等方面的具体应用。     

低能电子光刻的蒙特卡罗模拟

Electron beam lithography(EBL)has been playing an important role in the fabrication of large-scale integrated semiconductor devices because of its high resolution.Although high-energy electrons are widely employed in the present EBL system,high-energy electrons can penetrate through the resist layer,lose most of their energies in the substrate and,thus,cause damage to the underlying substrate.     

俄歇电子能谱仪在失效分析中的应用

介绍俄歇电子能谱仪的测试原理,举例说明在失效分析中的应用.     

俄歇电子能谱仪在材料分析中的应用

俄歇电子能谱仪（AES）是建立在电子技术、弱信号检测技术和超高真空技术基础上的一种研究材料表面组成元素的新型分析仪器。本文介绍了俄歇电子能谱技术的基本原理、技术发展和样品制备技术,重点介绍了俄歇电子能谱仪在材料分析（失效分析、表面分析、微区分析等）方面的应用。俄歇电子能谱仪在材料表面性质研究方面,有着不可替代的作用。     

镀膜玻璃层结构及成分的俄歇电子能谱分析

利用俄歇电子能谱仪测试了一种镀膜玻璃的表面层成分,并利用深度剖析的方法测试分析了其镀膜层的结构,估算了镀膜层的厚度。     

Monte Carlo simulation of secondary electron images for real sample structures in scanning electron microscopy

Monte Carlo simulation methods for the study of electron beam interaction with solids have been mostly concerned with specimens of simple geometry. In this article, we propose a simulation algorithm for treating arbitrary complex structures in a real sample. The method is based on a finite element triangular mesh modeling of sample geometry and a space subdivision for accelerating simulation. Simulation of secondary electron image in scanning electron microscopy has been performed for gold particles on a carbon substrate. Comparison of the simulation result with an experiment image confirms that this method is effective to model complex morphology of a real sample.     

Monte Carlo simulation of secondary electron and backscattered electron images in scanning electron microscopy for specimen with complex geometric structure

A new Monte Carlo technique for the simulation of secondary electron (SE) and backscattered electron (BSE) of scanning electron microscopy (SEM) images for an inhomogeneous specimen with a complex geometric structure has been developed. The simulation is based on structure construction modeling with simple geometric structures, as well as on the ray-tracing technique for correction of electron flight-step-length sampling when an electron trajectory crosses the interface of the inhomogeneous structures. This correction is important for the simulation of nanoscale structures of a size comparable with or even less than the electron scattering mean free paths. The physical model for electron transport in solids combines the use of the Mott cross section for electron elastic scattering and a dielectric function approach for electron inelastic scattering, and the cascade SE production is also included.     

Monte Carlo simulation of scanning electron microscope signals for lithographic metrology

Two computer codes for simulating the backscattered, transmitted, and secondary-electron signals from targets in a scanning electron microscope are described. The first code, MONSEL-II, has a model target consisting of three parallel lines on a three-layer substrate, while the second, MONSEL-III, has a model target consisting of a two-by-two array of finite lines on a three-layer substrate. Elastic electron scattering is determined by published fits to the Mott cross section. Both plasmon-generated electrons and ionized valence electrons are included in the secondary production. An adjustable quantity, called the residual energy loss rate, is added to the formula of Joy and Luo to obtain the measured secondary yield. The codes show the effects of signal enhancement due to edge transmission, known as blooming, as well as signal reduction due to neighboring lines, known as the “black-hole” effect.     

A particle-in-cell Monte Carlo code for electron beam ion source simulation

FAR-TECH, Inc., has developed a particle-in-cell Monte Carlo code (EBIS-PIC) to model ion motions in an electron beam ion source (EBIS). First, a steady state electron beam is simulated by the PBGUNS code (see http://far-tech.com/pbguns/index.html). Then, the injected primary ions and the ions from the background neutral gas are tracked in the trapping region using Monte Carlo method. Atomic collisions and Coulomb collisions are included in the EBIS-PIC model. The space charge potential is updated by solving the Poisson equation each time step. The preliminary simulation results are presented and compared with BNL electron beam test stand (EBTS) fast trapping experiments.     

Monte Carlo simulation of electron backscattering from compounds with low mean atomic number

This paper reports a Monte Carlo simulation where a single atom scattering model is adopted. The element taking part in each electron-atom interaction is selected on the basis of its contribution eitherto the total elastic cross section or to the electron's mean free path. Both Rutherford and Mott scattering are considered, with the continuous slowing down process of Bethe used to calculate the energy loss to the system. The backscattered electron coefficients show good agreement with experimental results from a large group of low atomic number materials when using a model which selects the scattering atom by its contribution to the whole compound calculated from its atomic fraction of the total elastic cross-section.     

Bremsstrahlung enhancement in electron probe microanalysis for homogeneous samples using Monte Carlo simulation

Fluorescence enhancement in samples irradiated in a scanning electron microscope or an electron microprobe should be appropriately assessed in order not to distort quantitative analyses. Several models have been proposed to take into account this effect and current quantification routines are based on them, many of which have been developed under the assumption that bremsstrahlung fluorescence correction is negligible when compared to characteristic enhancement; however, no concluding arguments have been provided in order to support this assumption. As detectors are unable to discriminate primary from secondary characteristic X‐rays, Monte Carlo simulation of radiation transport becomes a determinant tool in the study of this fluorescence enhancement. In this work, bremsstrahlung fluorescence enhancement in electron probe microanalysis has been studied by using the interaction forcing routine offered by penelope 2008 as a variance reduction alternative. The developed software allowed us to show that bremsstrahlung and characteristic fluorescence corrections are in fact comparable in the studied cases. As an extra result, the interaction forcing approach appears as a most efficient method, not only in the computation of the continuum enhancement but also for the assessment of the characteristic fluorescence correction.     

Uncertainty estimation and Monte Carlo simulation method

It has been reported that the Monte Carlo Method has many advantages over conventional methods in the estimation of uncertainty, especially that of complex measurement systems' outputs. The method, superficially, is relatively simple to implement, and is slowly gaining industrial acceptance. Unfortunately, very little has been published on how the method works. To those who are uninitiated, this powerful approach remains a ‘black art’. This paper demonstrates that the Monte Carlo simulation method is fully compatible with the conventional uncertainty estimation methods for linear systems and systems that have small uncertainties. Monte Carlo simulation has the ability to take account of partial correlated measurement input uncertainties. It also examines the uncertainties of the results of some basic manipulations e.g. addition, multiplication and division, of two input measured variables which may or may not be correlated. For correlated input measurements, the probability distribution of the result could be biased or skewed. These properties cannot be revealed using conventional methods.     

The interpretation of EBIC images using Monte Carlo simulations

Charge collection microscopy, usually known by the acronym EBIC (Electron Beam Induced Current) imaging, is a powerful technique for the observation and characterization of semiconductor materials and devices in the scanning electron microscope. Quantitative interpretation of EBIC images is often difficult because of the problem of accurately representing the electron-beam interaction with the semiconductor. This paper uses a Monte Carlo technique to simulate the electron-beam interaction, and it is shown that this permits simple analytical point-source solutions to be generalized to fully represent the experimental situation of an extended, non-uniform, carrier source. The model is demonstrated by application to EBIC imaging in the Schottky barrier geometry.     

Mechanisms of nanowhisker formation: Monte Carlo simulation

Nanowhisker formation on substrates activated by catalyst drops is studied by Monte Carlo simulation. Dependences of the whisker growth rate on diameter are investigated for various growth modes. The influence of deposition conditions on whisker morphology is examined. It is shown that straight thin whiskers of uniform thickness can be obtained only using a catalyst having a large contact angle with the whisker material. In such a physicochemical system, variation of growth conditions can result in nanotube formation. An atomic mechanism for the formation of a hollow whisker is proposed. Ranges of model growth conditions suitable for the growth of nanowhiskers and nanotubes are determined.