生长温度对Si基Ge量子点VLP-CVD自组织生长的影响

对利用超低压化学气相淀积技术在Ｓｉ上自组织生长Ｇｅ量子点的特征进行了研究,发现生长温度对Ｇｅ量子点尺寸分布和密度的影响不同于分子束外延的结果,这种现象与ＶＬＰ－ＣＶＤ表面控制反应模式有关,实验表明,选择适当的生长温度可以在Ｓｉ上自组织生长具有窄尺寸分布和高密度和Ｇｅ量子点。     

快速热退火对多层Ge量子点晶体质量的影响

使用超高真空化学气相淀积(UHV/CVD)设备在Si衬底上生长多层Ge量子点,用双晶X射线衍射(DCXRD)、拉曼光谱(Raman)等手段表征在不同条件下快速热退火的Ge量子点材料的组分、应力等特性,研究了快速热退火对多层Ge量子点晶体质量的影响.结果表明:随着退火温度的升高,量子点中Ge的组分下降,量子点应变的弛豫程...     

Ge/Si量子点生长的研究进展

回顾了近年来在Ge/Si量子点生长方面的研究进展.主要讨论了为了提高量子点空间分布有序性、增大量子点的密度、减小量子点的尺寸及改善其分布均匀性而采取的各种方法,如图形衬底辅助生长、表面原子掺杂及利用超薄SiO2层辅助生长等,以及Ge量子点的演变及组分变化.     

透镜形量子点的盖层和高宽比对应变场分布的影响

对透镜形自组织生长量子点的应变分布进行了研究。主要分析了透镜形状的量子点形貌对应变分布的影响,针对开放量子点（无盖层）和非开放量子点（有盖层）情况分别进行了讨论。结果表明,无论有无盖层,横向大尺寸量子点内部的应变分布趋向于均匀,无盖层量子点与有盖层情况相比内部应变释放程度大,甚至在量子点顶部有应变过释放情况,这一现象可以定性解释量子点生长的高度受限、量子点后续生长中出现的量子点塌陷和盖层生长停顿后产生的量子点“挖空”现象。     

埋层应变对溅射生长Ge量子点的影响

利用离子束溅射制备双层Ge/Si量子点,通过变化Si隔离层厚度和Ge沉积量研究了埋层应变场对量子点生长的影响。实验中观察到隔离层厚度较薄时,双层结构中第2层量子点形成的临界厚度减小,生长过程提前;此外,随着Ge沉积量的增加,第2层量子点密度维持在一定范围,分布被调制的同时岛均匀长大呈现单模分布。增大隔离层厚度,埋层岛的生长模式在第2层岛生长时得到复制。通过隔离层传递的不均匀应变场解释了量子点生长模式的变化。     

纳米硅量子点的自组织形成及其量子效应

用减压气相淀积法(LPCVD)，在二氧化硅以及石英基板上自组织形成了高密度的(10^11cm^-2)纳米尺寸的半球状硅单晶粒(硅量子点)，并进一步利用自组织生成的硅量子形成具有悬浮栅极的MOS单元，验证了硅量子点的量子效应。     

束流密度对Ge/Si量子点溅射生长的影响

采用离子束溅射技术在Si基底上自组织生长了一系列Ge量子点样品,研究了束流密度对Ge/Si量子点的尺寸分布和形貌演变的影响。原子力显微镜测试结果表明,随着束流密度的增加,量子点的面密度持续增大,其尺寸不断减小,量子点的形貌由圆顶形转变为过渡圆顶形。计算直径标准偏差的结果表明,当束流密度为0.86mA/cm2时,量子点的尺寸均匀性最佳。束流密度与沉积速率成正比,影响着表面吸附原子与其它原子相遇而形成晶核的能力。     

500℃下利用UHV/CVD在Si衬底上直接生长近平面Si0.5Ge0.5层

利用UHV/CVD系统,在一个相对较低的温度500℃下,研究了Si1-xGex层中的Ge含量与生长条件之间的关系,此时的Si1-xGex层处于一种亚稳的状态.并直接在Si衬底上生长制备了10个周期的3.0 nm-Si0.5Ge0.5/3.4 nm-Si多量子阱.拉曼谱、高分辨显微电镜和光荧光谱对其结构和光学性能进行的表征表明这种相对较厚的Si0.5Ge0.5/Si多量子阱结构基本上仍是近平面生长的,内部没有位错,其在电学和光学器件上具有潜在的应用.     

通过晶格失配调节有盖层张应变Ge量子点的光电特性

利用Ge与不同衬底形成的不同晶格失配度来调节有盖层的张应变Ge量子点的光电特性。通过有限元方法模拟并获得张应变Ge量子点内的应变分布,而后通过形变势理论和有效质量近似计算得到量子点的电子结构。与无盖层张应变Ge量子点相比,有盖层Ge量子点能保持更大的应变量。另外,随着量子点尺寸和晶格失配度的增大,导带Γ谷与导带L谷的能量差缩减,最终使Ge转变为直接带隙材料。直接带隙能量随着量子点尺寸的增大而减小。该研究结果表明张应变Ge量子点是制备包含激光器在内的Si基光源的理想材料,在未来光电子应用中有巨大潜力。     

Ge/Si纳米多层膜的埋层调制结晶研究

采用磁控溅射设备,当衬底温度为500℃时,在Si(100)基片上磁控溅射生长Ge/Si多层膜样品.使用Raman,AFM和低角X射线技术对样品进行检测和研究,结果表明通过控制Ge埋层的厚度,可以调制Ge膜的结晶及晶粒尺寸,获得晶粒平均尺寸和空间分布较均匀的多晶Ge/Si多层膜.     

Temperature-controlled synthesis of CdSe nanocrystals with narrow size distribution

CdSe quantum dots (QDs) with narrow size distribution and fine crystallinity were synthesized in paraffin liquid through temperature-control method. TEM, HRTEM, SEAD, XRD, PL and UV-VIS spectra were used to characterize the size, crystal structure and photoluminescence (PL) properties of CdSe nanocrystals. The PL spectra and TEM results revealed that the monodispersed and uniformed CdSe QDs with narrow size distribution were synthesized at a certain reaction temperature. HRTEM images combined with selected area electron diffraction (SAED) and XRD patterns illustrated that CdSe QDs showed near-perfect zinc-blende and wurtzite crystallinity at different temperatures. The Gibbs-Thomson calculation provided a thermodynamic explanation for obtaining the CdSe nanocrystals with narrow size distribution by temperature-control method.     

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.     

Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

Vertically stacked multilayers of self-organized InAs/GaAs quantum dots (QDs) structures with different GaAs intermediate layer thicknesses varying between 2.8 and 17 nm are grown by solid source molecular beam epitaxy (SSMBE) and investigated by photoluminescence spectroscopy (PL). For 17 nm thick GaAs spacer, the PL spectra show two well separated features attributed to the formation of two QDs family with a bimodal size distribution indicating no correlation between the dots in different layers. In the meanwhile, the structures having thinner spacer thickness demonstrate single PL peaks showing an enhancement of high energy side asymmetrical broadening when increasing the excitation power. The corresponding emission energies exhibit a red shift when the spacer layer thickness decreases and correlated with the enhancement of the vertical electronic coupling as well as the rise of the QD's size in the upper layers induced by the build up of the strain field along the columns. The spacer thickness of 8.5 nm is found to yield the best optical properties.     

在多相体系中制备核壳型CdSe/ZnS量子点

在多相体系中制得了CdSe/ZnS半导体量子点,采用X射线粉末衍射(XRD)、电子透射显微镜(TEM)等测试手段对产物进行了表征,结果表明CaSe/CdS量子点尺寸均一、形貌规则,具有立方晶体结构.初步研究了此体系的反应机理,并通过紫外-可见吸收光谱和荧光光谱对产物的光学性质进行了分析,结果表明在CASe量子点外面包覆一定厚度的ZnS壳层后,其激子发射强度和量子效率显著提高.     

Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

Room-temperature photoluminescence (PL) at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The integral intensity of PL from the new structure with InAs/(In)GaAsN QDs is comparable to that from a structure with InGaAsN quantum wells emitting at 1.3 μm.     

一种简单的水热法制备油溶性PbSe量子点

本研究采用简单的水热法得到了单一形态学和小尺寸分布的油溶性PbSe量子点。所得到的立方相PbSe量子点颗粒呈现近球形, 且平均颗粒尺寸为4.0 ± 0.5 nm。PbSe量子点在435 nm近紫外区域呈现出较强的和相对较窄的光致发光光谱, 光谱的半高宽值约为80 nm。随着反应时间的延长和反应温度的升高, 发光光谱向低能量区域移动, 谱峰的半高宽也随之变大。在改变前驱体Pb/S摩尔比的条件下, 发光光谱相对强度降低, 光谱也发生向长波长区域移动。另外, 随着反应温度和前驱体Pb/S摩尔比的改变, PbSe量子点颗粒表面的缺陷也增多。在反应过程中, 小颗粒长大成大尺寸颗粒促使PbSe量子点的发光光谱向长波长移动, 这个现象符合奥斯瓦尔德熟化定律。热力学不稳定和颗粒表面低浓度油酸包覆也造成PbSe量子点颗粒表面产生缺陷。     

Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots

InGaN/GaN quantum dots were grown on the sapphire (0 0 0 1) substrate in a metalorganic chemical vapor deposition system. The morphologies of QDs deposited on different modified underlayer (GaN) surfaces, including naturally as grown, Ga-mediated, In-mediated, and air-passivated ones, were investigated by atomic force microscopy (AFM). Photoluminescence (PL) method is used to evaluate optical properties. It is shown that InGaN QDs can form directly on the natural GaN layer. However, both the size and distribution show obvious inhomogeneities. Such a heavy fluctuation in size leads to double peaks for QDs with short growth time, and broad peaks for QDs with long growth time in their low-temperature PL spectra. QDs grown on the Ga-mediated GaN underlayer tends to coalesce. Distinct transform takes place from 3D to 2D growth on the In-mediated ones, and thus the formation of QDs is prohibited. Those results clarify Ga and In's surfactant behavior. When the GaN underlayer is passivated in the air, and together with an additional low-temperature-grown seeding layer, however, the island growth mode is enhanced. Subsequently, grown InGaN QDs are characterized by a relatively high density and an improved Gaussian-like distribution in size. Short surface diffusion length at low growth temperature accounts for that result. It is concluded that reduced temperature favors QD's 3D growth and surface passivation can provide another promising way to obtain high-density QDs that especially suits MOCVD system.