5GHz0.18μm CMOS宽带LC VCO

采用0.18μm RF CMOS工艺,设计了一个5GHz的宽带电感电容压控振荡器。该压控振荡器的电路结构选用互补交叉耦合型,采用噪声滤波技术降低相位噪声,并采用开关电容阵列扩展其调谐范围。后仿真结果表明,实现了4.44～5.44GHz的宽调谐。振荡器的电源电压为1.8V,工作电流为2.78mA,版图面积为0.37mm2。     

一种提供5位频带切换控制的5GHz压控振荡器

设计了一种提供5位频带切换控制的5GHz电容电感压控振荡器,采用NMOS-PMOS交叉耦合结构,并且为消除电流源的闪烁噪声而应用电阻偏置调节工作电流.电路采用TSMC RF0.18μm CMOS工艺进行仿真,仿真结果显示,在1.8V电源电压下,在偏离中心频率1MHz处的相位噪声为-120.8dBc/Hz,调谐范围为24.6%,功耗仅为2.3mW.     

基于背靠背PN变容管的低相位噪声LCVCO研究

研究了一种新型单片集成LC压控振荡器。该压控振荡器在传统的单端PN变容管电路结构基础上,通过对调谐电路进行改进,在保证调谐范围的前提下,有效地降低了相位噪声。压控振荡器使用高Q值螺旋电感,并采用SMIC0.18μm1P6M混合信号CMOS工艺实现。仿真结果表明,在调谐范围不变情形下,新型设计的VCO相位噪声比传统的改善了16.25dB@1kHz、8.08dB@100kHz。压控振荡器的中心频率1.8GHz,工作电压为1.8V,工作电流为3mA。     

宽带低相位噪声CMOS环型压控振荡器的设计与研究

采用一种环型电路结构,设计了一个1.3GHz宽带线性压控振荡器.采用 TSMC 0.18μm RF CMOS 工艺,利用 CadenceSpectreRF 完成对电路的仿真.结果显示,在电源电压Vdd =1.8 V 时,控制电压范围为 1.0～1.18 V,频率的变化范围为800 MHz～2.1GHz,相位噪声为-105 dBc/Hz@1 MHz.很好地解决了相位噪声与调谐范围之间的矛盾.     

一种低噪声C类LC压控振荡器的设计

为了改善压控振荡器相位噪声,基于40 nm CMOS工艺,设计一种低噪声C类LC压控振荡器。交叉耦合NMOS对管通过电流镜偏置作为电路的电流源,并采用共模反馈偏置电路使交叉耦合PMOS对管工作在饱和区,保证LC压控振荡器实现C类振荡。通过差分可变电容的设计,压控振荡器的增益减小,压控振荡器的相位噪声得到改善。设计了4组开关电容进行调节,增大压控振荡器的调谐范围。仿真结果表明,处于1.2 V的电压下,压控振荡器振荡频率范围在4.14～5.7 GHz,频率调谐范围变化率达到31.2%,相位噪声为-112.8 dBc/Hz。     

0.18-mm RF CMOS 工艺电感电容压控振荡器*

采用SMIC 0.18mm RF CMOS工艺设计实现了一种低相位噪声的压控振荡器。该电路采用了优化设计的电感电容谐振腔,差分耦合的放大器作为负阻补偿谐振腔的能量损耗。为了拓宽电路的频率调谐范围,在电路中设计了三比特开关电容阵列。测试结果表明：振荡器频率调谐范围为1.92GHz 到3.35GHz,在2.4GHz 频率处偏移载波1MHz处的相位噪声为-117.8dBc/Hz。电路直流供电电压为1.8V,电流为5.6mA.,芯片尺寸为600mm′900mm。芯片性能良好,可以应用于IEEE802.11b标准的无线局域网接收机中。.     

高性能超低功耗的4.224GHz正交LC VCO

采用Jazz0.18μm RF CMOS工艺设计并实现应用于MB-OFDM超宽带频率综合器的4.224GHz电感电容正交压控振荡器。通过解析的方法给出了电感电容正交压控振荡器的模型,并推导出简洁的公式解释了相位噪声性能与耦合因子的关系。测试结果显示,核心电路在1.5V电源电压下,消耗6mA电流,频率调谐范围为3.566~4.712GHz;在主频频偏1MHz处的相位噪声为-119.99dBc/Hz,对应的相位噪声的FoM(Figure-of-Merit)为183dB;I、Q两路信号等效的相位误差为2.13°。     

一种低相位噪声的毫米波压控振荡器

基于推推振荡器结构设计了一种低相位噪声的毫米波压控振荡器,相比传统采用直接振荡和倍频实现的振荡器,该振荡器具有体积小、相位噪声低及电路简单等优点.振荡器中的谐振电路采用多级串联谐振,电感采用微带线的形式,提高了谐振器的品质因数,进而降低了振荡器的相位噪声,且在谐振电路通过微带耦合方式实现了基频输出.基于GaAs异质结双极晶体管(HBT)工艺对振荡器进行了设计和流片,芯片尺寸为1.8 mm×1.4 mm.在5V工作电压和0～13 V调谐电压条件下,振荡器的输出频率为42.1～46.2 GHz,电流为120 mA,输出功率为1 dBm,1/2次谐波抑制大于15 dB,相位噪声为-60 dBc/Hz@10 kHz、-85 dBc/Hz@100 kHz和-105 dBc/Hz@1 MHz.     

低相位噪声、宽调谐范围LC压控振荡器设计

基于开关电容和MOS可变电容相结合的电路结构,设计了一种分段线性压控振荡器,很好地解决了相位噪声与调谐范围之间的矛盾.另外,在尾电流源处加入电感电容滤波,进一步降低相位噪声.采用TSMC 0.18(m CMOS工艺,利用Cadence中的SpectreRF对电路进行仿真,当电源电压VDD=1.8V时,其中心频率为1.8GHz,可调频率为1.430～2.134GHz,调谐范围达到37%,在偏离中心频率1MHz处,相位噪声为-131dBc/Hz,静态工作电流为5.2mA.     

集成低功耗CMOS压控振荡器及其二分频器

实现了应用于无线局域网收发机的集成低功耗CMOS压控振荡器及其二分频器.压控振荡器是由在片对称螺旋型电感和差分容抗管组成的LC负阻型振荡器,而二分频器采用了ILFD结构.由于采用了差分LC元件和ILFD技术,整个电路的功耗很低.该电路已经用0.18μm CMOS工艺实现.测试结果表明该电路能产生低相位噪声的3.6/1.8GHz双带本振信号,并具有很宽的可控频率范围.当电源电压为1.5V时,该电路消耗了5mA的电流.芯片面积为1.0mm×1.0mm.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NOTICE OF CHANGING JOURNAL OF ELECTRONICS （CHINA） TO MICROSYSTEMS ＆ NANOENGINEERING

正Journal of Electronics(China)(JE)was founded in 1984,sponsored by the Institute of Electronics,Chinese Academy of Sciences.JE is one of the first English academic journals in China in the field of Electronics and Information technology.The journal was published quarterly since it was launched in 1984 to 2003,then it is published bimonthly till now.During