从特征尺寸的缩小看光刻技术的发展

从特征尺寸不断缩小变化的角度阐述了近代光刻技术发展的历程。指出90nm节点的主流光刻技术是193nmArF光刻;193nm浸入式光刻技术作为65nm和45nm节点的首选光刻技术,如果配合二次曝光技术,还可以扩展到32nm节点的应用,但成本会增加;如果特征尺寸缩小到22nm和16nm节点,EUV光刻、无掩模光刻以及纳米压印光刻等将成为未来发展的重要研究方向。在对各种光刻技术的原理、特点以及优缺点等分析对比的基础上,对未来主流光刻技术的发展做了一定的展望。     

193 nm ArF浸没式光刻技术PK EUV光刻技术

2006年11月英特尔决定采用193nm ArF浸没式光刻技术研发32nm工艺。2007年2月IBM决定在22nm节点上抛弃EUV光刻技术,采用193nm ArF浸没式光刻技术。对于32nm/22nm工艺,193nm ArF浸没式光刻技术优于EUV光刻技术,并将成为主流光刻技术。     

EUV光源研发的新突破

在32nm技术节点以下时,尽管极紫外（EUV）光刻技术已被视为主流的光刻生产技术解决方案,但是如何研发一套可靠、高性能EUV光源系统仍然是摆在业界面前的一道难题。此文将着重介绍了基于触发模式、输出功率达到100W的光源系统。     

22纳米节点的光刻方案之争

近年来193nm浸没式光刻炙手可热,不但成了65/ 45nm节点主流技术,而且在32nm的争夺中也毫不落下风,可能会延伸至22nm,人们甚至一度讨论起193nm会否就是“最后的波长”。通常认为,在22nm节点时不但需要折射率高于1．6的浸入液,还     

超紫外线光刻技术发展缓慢Intel目光转向反向光刻技术

由于超紫外线光刻技术（extreme ultraviolet，EUV）的发展迟缓，Intel透露正在开发一种可能将光学扫描仪扩展到22nm制造节点的可制造性设计。 Intel正在开发的这种计算光刻（computational lithography）是一种反向光刻技术。反向光刻、EUV和二次图形曝光技术是Intel正在为22nm制造节点进行评估的光刻技术。     

193nm光刻技术延伸方法

介绍了提高193nm光刻分辨力的方法,如浸入式光刻技术、相位移技术等。并介绍了193nm浸入式光刻机的优点和前景。     

提高193nm ArF Stepper分辨率的几种技术

193nm ArF Stepper是量产90nm芯片的主流光刻机。在此基础上。综合采用浸入式光刻技术和增大数值孔径NA技术等。已制造出193nm ArF浸入式光刻机．它将是量产65／45nm芯片的主流光刻机。     

光刻专家评选浸没式和EUV光刻技术

根据5月份在温哥华举行的受邀光刻技术论坛披露的报告，最新发布的国际半导体技术蓝图（ITRS）中，半导体厂商和供应商就光刻的前景和未来达成了普遍的共识。对各项最新的光刻技术的研究表明，193纳米浸没式光刻技术将成为量产45纳米节点产品的首选，而EUV（极紫外）光刻技术将在32纳米节点上大展拳脚。     

光源掩模协同优化的原理与应用

当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限.光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期.综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术.     

Cymer专注于DUV／EUV光刻光源

随着半导体设计规则的紧缩,在65nm及更高节点,浸没式光刻和EUV被认为是获得更小节距的可选择方案,出于技术极限和成本的考量,在实现量产上光刻技术面临极大挑战,其中之一来自于光刻光源。Cymer作为光源领域的领先供应商,目前提供DUV及EUV光源。     

可用于极紫外光刻的三线毛细管的概念设计

极紫外光刻(EUVL)技术是目前193 nm浸没式光刻技术的延伸,有望突破30 nm或更小技术节点而成为下一代光刻(NGL)技术的主流。毛细管放电极紫外(EUV)光源可为极紫外光刻研究提供高效、便捷的光刻源头,但光源的辐射功率较低一直制约着极紫外光刻技术的发展。三线毛细管放电极紫外光源的概念设计与常用毛细管装置有着本质的区别,它们不同的工作机制将使三线毛细管放电产生的环带状等离子体极紫外光源的辐射功率明显高于常用毛细管的情形,最佳收集角也得到相应的提高。三线毛细管概念设计方案的提出不仅从技术上开拓出一片全新的领地,为极紫外光刻研究提供所需的光源,而且从效益上看更适合于大规模工业生产。     

Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask

Extreme ultraviolet (EUV) lithography is expected to be the main candidate in the semiconductor manufacturing starting at 32 nm. As the CD is getting smaller, the aspect ratio of the patterns on the EUV mask is becoming larger. The shadowing effect will become much more significant when keeping the same 4× mask magnification. In this work, mask magnification effects on the diffracted light were explored with rigorous coupled-wave analysis (RCWA) for the sub-32 nm node. The simulated binary mask consists of 70-nm TaBN absorber and 2.5-nm Ru capping layer. The dependences of the diffraction efficiencies on mask pitches were calculated. The impacts of the absorber shadowing were observed from the near field distribution on the EUV mask. The aerial images formed by the diffracted light from the 4× and 8× masks were further evaluated.     

Modelling strategies for the incorporation and correction of optical effects in EUVL

Extreme ultraviolet lithography (EUVL) is a leading candidate for the 22 nm node lithography and beyond. However, there are still some critical problems before EUVL may be deployed in high-volume manufacturing. One of the critical problems is to estimate the EUVL aerial image formation for optical proximity correction (OPC) in order to compensate for EUVL effects such as shadowing and flare. This study discusses aerial image formation through modeling of optical transfer function to assimilate optical diffraction, long range layout dependent flare effects, and shadowing effects due to non-telecentric imaging optics in the EUV case. Hence, after optimizing optical process parameters to model the EUV aerial image, this study will investigate OPC modeling methods employed to compensate these optical effects in the mask design flow.     

近期光刻用ArF准分子激光技术发展

193 nm ArF准分子激光光刻技术已广泛应用于90 nm以下节点半导体量产。ArF浸没式也已进入45 nm节点量产阶段。双图形光刻（DPL）技术被业界认为是下一代光刻32 nm节点最具竞争力的技术。利用双图形技术达到32 nm及以下节点已经被诸多设备制造商写入自己的技术发展线路。Cymer公司和Gigaphoton公司为双图形光刻开发了高输出功率、高能量稳定性和具有稳定的窄谱线宽度ArF准分子光源。分析了近期发展用于改进准分子激光性能的关键技术：主振-功率再生放大(MOPRA)结构、主振-功率振荡(MOPO)结构,主动光谱带宽稳定技术,先进的气体管理技术。对光刻用准分子激光光源技术发展趋势进行了简要的讨论。     

Development of interference lithography for 22 nm node and below

An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25 nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool.     

Challenges in using optical lithography for the building of a 22 nm node 6T-SRAM cell

FinFET devices are one of the most promising candidates for enabling SRAM scaling beyond the 32 nm technology node. This paper will describe the challenges faced when setting up the patterning processes in the front-end part of a 22 nm node 6T-SRAM cell. Key in this work was achieving the required CD and profile target specs for the fin and the gate level. Also, the implant levels, though still a 450 nm pitch, turned out to be more difficult than expected because of the underlying topography. All this work resulted in the first electrically functional 22 nm node SRAM cell, with the contact and metal level exposed on the ASML EUV α-demo tool.