ESP工艺制备SnO2—MnO薄膜的氢敏特性

研究了用静电喷雾高温分解（ＥＳＰ）工艺制备的ＳｎＯ２－ＭｎＯ薄膜在氢气氛下电阻的变化，结果表明它的电阻较高，对Ｈ２亦有较高的灵敏度；这种特性与ＭｎＯ添加剂密切关系。     

MSnO_3和MSn_（0．5）Zr_（0．5）O_3（M＝Sr，Ba）的水热合

本文利用水热合成方法对ＭＳｎＯ３和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３（Ｍ＝Ｓｒ，Ｂａ）的合成进行了研究，并采用ＸＲＤ、ＳＥＭ和ＩＣＰ等方法对产物进行了表征，结果表明：在Ｍ（ＯＨ）２－ＳｎＯ２（或ＳｎＯ２＋ＺｒＯ２）－ＫＯＨ体系中，当ＫＯＨ／Ｓｎ和ＫＯＨ／（Ｓｎ＋Ｚｒ）≥３０时，２６０℃下晶化５～７天，可获得ＭＳｎＯ３和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３纯相，在Ｍ（ＯＨ）２－（ＳｎＯ２＋ＺｒＯ２）－ＫＯＨ－Ｈ２Ｏ体系中，可通过控制介质碱度来获得ＭＳｎＯ３＋ＭＺｒＯ３混合物和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３，并根据合成规律初步探讨了反应过程．     

MSnO3和MSn0.5Zr0.5O3（M=Sr,Ba）的水热合成

本文利用水热合成方法对ＭＳｎＯ３和ＭＳｎ０．５Ｚｒ０．５（Ｍ＝Ｓｒ，Ｂａ）的合成进行了研究，并采用ＸＲＤ、ＳＥ几ＩＣＰ等进行产物进行了表征，结果表明：在Ｍ（ＯＨ）２．ＳｎＯ２（呈ＳｎＯ２＋ＺｒＯ２）－ＫＯＨ体系中，当ＫＯＨ／Ｓｎ和ＫＯＨ（Ｓｎ＋Ｚｒ）≥３０时，２６０℃下晶化５－７天，可获得ＭＳｎＯ３和ＭＳｎ０．５Ｏ３纯相，在Ｍ（ＯＨ）３－（ＳｎＯ２＋ＺｒＯ３）－ＫＯＨ－Ｈ２Ｏ体系中，可通过控制介质     

具有双重相互作用（PPO—PDMS—PHS）n／PPO共混相容性的研究

利用ＤＳＣ和ＤＭＡ研究了一种新的含有机硅三元多嵌段共聚物（ＰＰＯ－ＰＤＭＳ－ＰＨＳ）ｎ与均聚物ＰＰＯ共混体系的相容性，结果表明，均聚物ＰＰＯ与（ＰＰＯ－ＰＤＭＳ－ＰＨＳ）ｎ中的两种嵌段（ＰＰＯ和ＰＨＳ）有相容性，两种嵌段协和的结果提高了共混相容性的临界值，当均聚物ＰＰＯ的Ｍｎ为２００００时，ＰＰＯ嵌段的Ｍｎ为２００００，ＰＨＳ嵌段的Ｍ国５１６０时（ＰＯ－ＰＤＭＳ－ＰＨＳ）ｎ共混物的一相容体系。     

具有双重相互作用PPO-PDMS-PHS_n/PPO共混相容性的研究

利用ＤＳＣ和ＤＭＡ研究了一种新的含有机硅三元多嵌段共聚物ＰＰＯ－ＰＤＭＳ－ＰＨＳ与均聚物ＰＰＯ共混体系的相容性，结果表明，均聚物ＰＰＯ与ＰＰＯ－ＰＤＭＳ－ＰＨＳ中的两种嵌段（ＰＰＯ和ＰＨＳ）有相容性，两种嵌段协同作用的结果提高了共混相容性的临界值，当均聚物ＰＰＯ的Ｍｎ为２００００时，ＰＰＯ嵌段的Ｍｎ为２００００，ＰＨＳ嵌段的Ｍｎ为５１６０时，ＰＰＯ－ＰＤＭＳ－ＰＨＳ／ＰＰＯ共混物为一相容体系。     

脉冲激光法外延生长锰氧化物薄膜

利用脉冲激光法在ＬａＡｌＯ３衬底上外延生长了Ｌａ－Ｃａ－Ｍｎ－Ｏ、Ｌａ－Ｓｒ－Ｍｎ－Ｏ等巨磁电阻薄膜,测定了这些薄膜电阻－温度特性,观测到了其铁磁转变及巨磁电阻效应,实验发现,较高的淀积温度使薄膜的峰值转变温度Ｔｐ降低,峰值电阻率增大,而高温后退火则具有相反的效果,分析比较了多种因素对薄膜生长与性能的影响及其机理。     

Co2O3掺杂对SnO2 - MgO- Nb2 O5压敏材料性能的影响

研究了Ｃｏ２Ｏ３含量对ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５压敏材料的密度、非线性特性的影响。实验结果表明,Ｃｏ２Ｏ３不仅能够增大ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５材料的质量密度,而且能提高非线性系数,减小漏电流,在较大程度上提高了ＳｎＯ２－ＭｇＯ－Ｎｂ２Ｏ５压敏材料的性能。     

Mn,Si等添加剂对GBBL电容器用材料SrTiO3性能的影响

研究了ＭｎＯ,ＳｉＯ２等添加剂对低温一次烧结ＳｒＴｉＯ３ＧＢＢＬ电容器材料介电性能的影响。结果表明,随着ＭｎＯ含量的增加样品的有效介电常数增加,同时介电损耗也大幅增加。ＳｉＯ２的添加量大于０．２％（质量分数）时不利于半导化,并降低介电常数。加入适量的ＭｎＯ－Ａｌ２Ｏ３－ＳｉＯ２能使材料的有效介电常数有较大提高,损耗则增加不大。     

用于燃料电池的Ln1—xSrxMnO3系阴极材料的研究

用固相反应合成了Ｌｎ１－ｘＳｒｘＭｎＯ３系钙钛矿型多元氧化物，用Ｘ光衍射分析测定了反应产物 相组成和结构类型。离子半径〉０．１Ａ的Ｐｒ，Ｎｄ，Ｓｍ，Ｇｄ等取代后的Ｌｎ１－ｘＳｒｘＭｎＯ３仍具有正交ＬａＭｎＯ３的结构，而离子半径〈０．９５Ａ的Ｙ和Ｙｂ取代后的产物，则为六方结构（Ｙｂ，Ｙ）ＭｎＯ３及第二相Ｓｒ（Ｙｂ，Ｙ）２Ｏ４。还测定了产物的烧结性能的电导率。发现（Ｐｒ，Ｎｄ，Ｓｍ）１－ｘＳｒｘＭｎＯ     

制备SnO2薄膜时原料中水对其成膜和光电性质的影响

用无水ＳｎＣｌ４和ＳｎＣｌ４．５Ｈ２Ｏ为原料，用热喷涂法制备ＳｎＯ２薄膜，在基片温度为５３０℃时，对所制得ＳｎＯ２薄膜进行了Ｘ－射线，ＳＥＭ分析，并对其发电性质进行测定，总结出含Ｈ２Ｏ的ＳｎＣｌ４制得的ＳｎＯ２薄膜生长速度快，电阻率低。     

Gas sensitivity of metal oxide mixed tin oxide films prepared by spray pyrolysis

Various kinds of SnO₂ films, modified with the addition of iron, antimony, copper, titanium, manganese, nickel, cobalt or calcium oxides, were fabricated by using the spray pyrolysis technique and their gas-sensing characteristics were studied. From electrical measurements in air, the relative sensitivity towards inflammable gas of these SnO₂-based film sensors was compared. It was observed that SnO₂-based films of higher electrical resistance had a tendency to have higher sensitivity towards ethanol than the SnO₂-based films of lower resistance. The addition of p-type metal oxides, such as NiO and MnO, to the SnO₂ matrix was found to be effective in increasing the sensitivity towards inflammable gas.     

Gas sensing characteristics of tin dioxide with small crystallites

The effect of calcining temperature on gas sensitivity and resistance in wet air was observed with elements of SnO₂ thick film. The results were interpreted as a function of the crystallite size. As the crystallite size reduced, the sensitivity to H₂ gas enhanced at temperatures lower than 300C, but at those higher than 350C it did not. The temperatures showing the minimum resistance in air and the maximum sensitivity to H₂ gas decreased with reduction of the crystallite size. The temperature variations were assigned to the change of the activation energies of the oxygen adsorbates. It is suggested that the decrease of activation energies is one of the reasons for the sensitivity enhancement with the fine powder.     

Sol-Gel法制备低阻In2 O3薄膜

采用sol-gel法制备In2O3薄膜材料，研究了不同制备条件对薄膜电阻的影响；分别用XPS、XRD方法对材料进行了分析，确定了其结构和组成，并用此薄膜材料制作了直热式气敏元件，发现它对乙醇、丁烷气体具有较高的灵敏度。     

The comparative effect of two different annealing temperatures and times on the sensitivity and long-term stability of WO/sub 3/ thin films for detecting NO/sub 2/

We have deposited 150-nm-thick WO/sub 3/ films on Si/sub 3/N/sub 4//Si substrates provided with platinum interdigital electrodes and annealed in static air at 300/spl deg/C and 500/spl deg/C temperatures for 24 h and 200 h. The morphology, crystalline phase, and chemical composition of the films have been characterized using AFM, grazing incidence XRD and high resolution XPS techniques. The sensor resistance response curve has been obtained in the 0.2 -4 ppm NO/sub 2/ gas concentration range in humid air (50% relative humidity), varying the operating temperature between 25 and 250/spl deg/C. By plotting both sensor resistance and gas concentration logarithmically, the response is linear over the investigated dynamic range. Sensor sensitivities, here defined as the ratio of sensor resistance in gas to that in air (i.e., S=R/sub Gas//R/sub Air/), have been compared at a given NO/sub 2/ gas concentration (0.2 ppm). The long-term stability properties have been evaluated by recording film sensitivity for 1 yr under standardized test conditions. Increasing the annealing temperature from 300 to 500/spl deg/C causes the sensitivities to decrease. The 300/24h film is shown to be the most sensitive at S=233, but with poor long-term stability properties. The 300/200h film with S=32 is stable over the examined period. The 500/24 and the 500/200 films are shown to be less sensitive with S=16 and S=14, respectively. The longer the annealing time and the higher the temperature, the poorer the sensitivity, but with positive effects upon the long-term stability of the electrical response. The influence of the annealing conditions on sensitivity and long-term stability has been correlated with the concentration of surface defects, like reduced WO/sub 3/ phase (i.e., W/sup 4+/), which resulted in a strong effect on the sensors' response.     

二氧化锡薄膜的电阻气敏和光透射率气敏性能

以无机盐为原料,采用新颖的溶胶－凝胶工艺制备了具有优良电阻－气敏性能的纳米晶二氧化锡薄膜,其在最佳工作温度２００℃对６００ｐｐｍＣＯ的灵敏度可达５００,响应时间和恢复时间分别为１３ｓ和２０ｓ,进一步研究了薄膜的光透射率－气敏性能,发现当通ＣＯ时,透射率下降,最佳工作温度与电阻－气敏性能一致,当提高薄膜的退火温度时,电阻－气敏和光透射率－气敏的灵敏度均下降,分析了产生这些现象的原因。     

PECVD法制备的SnOx气敏膜的色变机理

有用ＰＥＶＣＤ法制备了非晶掺Ｓｎ有机膜，经过退火处理得到ＳｎＯｘ气敏膜，考察了退火过程和气敏响应过程的阻温特性和颜色变化的关系，研究了表面掺Ａｇ对ＳｎＯｘ元件电阻、     

介孔硅基WO3纳米颗粒薄膜室温气敏元件特性

采用双槽电化学腐蚀法在p＋单晶硅片表面制备介孔硅层（meso-PSlayer）,然后用对向靶磁控反应溅射法在介孔硅表面沉积WO3纳米颗粒薄膜,在干燥空气中于400℃下保温4h进行退火热处理,制备出介孔硅基WO3纳米颗粒薄膜（WO3-PS）室温气敏元件.利用扫描电子显微镜（SEM）分析介孔硅层及WO3-PS的表面形貌,通过X射线衍射（XRD）研究WO3的结晶状态,测试WO3-PS气敏元件在室温下对NO2、NH3的气敏性能,并探讨了WO3-PS气敏元件的工作机理.实验结果表明,在介孔硅表面沉积WO3纳米颗粒薄膜可使介孔硅的气敏性能显著提高,其中在室温下对10×10^-6NO2的灵敏度由5提高至56,大大提高了介孔硅的灵敏度,并降低了其响应/恢复时间,提高了对NO2的选择性.     

Study of the environment effect on the properties of BDN-SA Langmuir–Blodgett films

The chemical and electrical properties of BDN-SA Langmuir–Blodgett films in air and N₂H₄ gas respectively, were studied using X-ray Photoelectron Spectroscopy (XPS) and the electrical resistance measurement. The results indicate that the oxidation effect caused by air leads to the lost of N and partial oxidation of Ni and S in the LB films; while the reduction effect induced by N₂H₄ gas decreases the amount of O in the LB films. The electrical resistance of LB film decreases dramatically after the film being exposed to N₂H₄ gas while increases with the exposure time in air.     

TiNx/SiO2/Ag/SiO2低辐射膜耐H2S气体的腐蚀性能

为了提高玻璃片上SiO2/Ag/SiO2复合膜的耐腐蚀性能,用磁控溅射法在其上制备了TiNx薄膜.采用X射线衍射(XRD)、扫描隧道显微镜(STM)研究了TiNx薄膜的结构及表面形貌;参照GB/T 5137.3-2002电子产品硫化氢腐蚀的检验方法研究了TiNx/SiO2/Ag/SiO2低辐射膜耐H2S气体的腐蚀性能....