一种新型金属封装的光纤法珀温度传感器

设计制作了一种金属封装的光纤法珀温度传感器,该传感器采用不锈钢毛细金属管代替传统的空心光纤对光纤法珀腔进行封装,毛细金属管在作为法珀腔腔体的同时也是温度敏感元件。采用该结构简化了光纤法珀温度传感器的封装工艺,理论分析和实验的结果表明,该金属封装结构使得传感器的灵敏度易于控制,对于腔长为10mm的温度传感器其精度达到±0.5℃。     

液体填充增敏型法布里-珀罗微腔光纤温度传感器

为了提高传统空气腔法布里-珀罗(法珀)干涉仪的温度灵敏度,提出了一种基于液体填充的增敏型 法珀微腔光纤温度传感器。传感器采用标准单模光纤与二氧化硅毛细管制作长度为微米量级的光纤法珀微腔并填充以液体。对所制作液体填充法珀微腔光纤温度传感器,由反射光谱通过相关算法计算绝对腔长的方式实现温度解调。理论和实验均表明,该液体填充型法珀微腔传感结构具有明显的温度增敏效果。对于腔长为~12.140 μm的液体填充法珀微腔光纤温度床感器,其腔长-温度灵敏度达到了2.185 nm/℃,高于作为参照的非填充空气腔法珀光纤温度传感器高一倍左右,增敏效果明显。     

基于双金属膜的光纤MEMS温度传感器的设计

提出了一种新型结构的温度传感器,该传感器基于Fabry-Perot干涉和双金属效应.采用MEMS技术制作出线性度好、精度高的光纤MEMS温度传感器.阐述了传感器的工作原理,研究了传感器的力学模型,确定了温度敏感膜材料,用有限元软件ANSYS验证了模型的合理性.模拟了法珀腔的腔长对温度传感器性能的影响,为传感器的加工制作提供了理论依据.该设计可为以硅为基底的压力传感器提供一种温度补偿方法.     

FBG温度传感器交叉敏感问题的研究

基于光纤布拉格光栅(FBG)传感器的温度应变交叉敏感原理,提出了一种新型的高灵敏度FBG温度传感器封装方法,该封装方法通过在金属管内设置弹簧进行预应力封装,完全隔绝外界压力对FBG温度传感器测温的影响,可有效地解决温度和应变对FBG温度传感器交叉敏感的问题,同时提高FBG温度传感器的温度灵敏度。对封装后的光纤光栅温度传感器进行温度特性测试和温度应力交叉敏感测试实验,结果表明,传感器中心波长的变化仅由温度变化引起,不受压力变化的影响。另外,该传感器表现出较好的线性度和重复性,可以达到准确测量温度的目的。     

基于可调谐法珀腔解调的光纤法珀应变传感系统

本文提出了一种基于可调谐法珀腔解调的光纤法珀应变传感器系统，阐述了该系统的测量原理，提出了可调谐法珀腔的一种设计方案。     

管式光纤光栅高温传感器封装及温度特性

光纤光栅在高温环境下因丧失涂覆层保护而易断,制作了一种金属管式耐高温光纤光栅温度传感器。使用不锈钢管对飞秒激光刻写的纯石英光纤光栅进行保护封装,在100~450 ℃温度范围内,对其温度特性进行实验研究,实验结果表明:该传感器的灵敏度系数为12.7 pm/ ℃,线性相关系数高达0.995,具有很好的重复性。该封装方法简单快捷,封装的传感器稳定性好,机械强度高,可用于工程中的高温测量。     

白光干涉型光纤法珀腔传感器的制作工艺研究

对白光干涉型光纤法布里珀罗干涉仪(WIFFPI)传感器的制作工艺进行了研究，讨论了内、外腔式两种光纤传感法珀腔的制作方法，重点论述了外腔式光纤传感法珀(EFFP)腔的制作工艺．对制作过程中的一些关键问题进行了分析，并提出了解决的方法，为WIFFPI传感器的制作及应用奠定了基础，也为其他类型的光纤法布里珀罗干涉仪传感器的研究及制作提供了参考。     

啁啾光纤光栅法布里-珀罗传感器波分频分复用

实现了一种具有大容量复用潜力的啁啾光纤光栅(CFBG)法布里-珀罗(F-P)传感器复用系统。该传感器复用系统的建立基于波分频分复用方法,即中心波长相同的传感器利用腔长不同空间频率不同来实现空间频分的复用,采用不同中心波长的传感器阵列与频分复用方法相结合就可实现波分频分复用。描述了该光纤光栅法布里-珀罗传感器复用系统的结构、原理及应变实验结果。实验结果表明,该方法可以大大地提高光纤光栅法布里-珀罗应变传感器的复用能力,理论上可复用数百个光纤光栅法布里-珀罗应变传感器;实验中应变测量精度好于±10με,可满足大部分实际应用的要求。     

基于光楔的光纤法-珀应变传感器解调系统原理研究

根据基于光楔的光纤法-珀应变传感器解调系统的结构,分析了解调系统的解调原理,并给出了仿真结果.得出当光楔厚度与法-珀传感器腔长相等时,其输出光强最大.通过实验结果与仿真结果的比较,说明基于光楔的光纤法-珀应变传感器解调系统在原理上是正确的.     

薄膜型光纤温度传感器的膜系设计

纳米薄膜与光纤的结合为新型感测提供了各种潜在可能。为了分析温度敏感薄膜的膜系设计及其对光纤温度传感器传感特性的影响,根据光学薄膜理论和光纤传感器的温度感测原理,探讨了光纤温度传感器中敏感薄膜的膜系设计,并构建了薄膜型光纤传感器的温度传感特性模型。以测试系统的参数、性能以及其对干涉光谱的要求为基础,设计了对称性较好的法布里-珀罗薄膜腔。通过对比不同膜层厚度法布里-珀罗结构膜系的传感特性,筛选膜系,分析了高、低折射率薄膜材料的热光系数和热膨胀系数分别对温度传感特性的影响权重,为光纤温度传感器敏感薄膜的镀制及工艺制定提供理论依据。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.