界面对TbFeCo薄膜磁畴的形成和移动的影响

本文用振动样品磁强计和磁光克尔回线测试仪研究了非晶ＴｂＦｅＣｏ薄膜和ＡＩＮ薄膜之间的界面对非晶ＴｂＦｅＣｏ薄膜磁畴的形成和移动的影响，得出结论：ＡＩＮ薄膜的表面粗糙程度对非晶ＴｂＦｅＣｏ薄膜的磁和磁光性能有影响。当表面光滑时，非晶ＴｂＦｅＣｏ薄膜的磁滞回线和磁光克尔回线的矩形比高，这是由于磁畴的成核和移动与界面粗糙性质紧密相关的结果。     

Ce掺杂对TbFeCo材料磁光性能影响的研究

采用射频磁控溅射方法制备了TbFeCo非晶磁光薄膜，并在TbFeCo中引入轻稀土元素Ce，测试了薄膜的磁光性能。研究了薄膜成分对其磁光性能的影响。结果表明；在TbFeCo薄膜中掺入少量Ce时，薄膜的磁光克尔角及矫顽力都有所提高，矩形度也增加了。但随Ce掺入量的增加，薄膜的磁光性能发生恶化，较好的掺杂在10.31?左右。     

SmDyFeCo磁光薄膜的制备和性能研究

本文采用射频磁控溅射方法制备了ＳｍＤｙＦｅＣｏ非晶磁光薄膜。研究了氩气压、溅射功率对ＳｍＤｙＦｅＣｏ薄膜性能的影响。实验表明，反射率随氩气压升高而降低。矫顽力随氩气压升高而逐渐增大，达到一定值时克尔回线反向，随后矫顽力又逐渐减小。高气压下的矫顽力温度特性较低气压下的矫顽力温度特性要好，但氩气压进一步升高，磁光克尔回线矩形度变差。本征磁光克尔角随氩气压升高而增大，到达最大值后又逐渐减小。反射率随溅射     

SmDyFeCo磁光薄膜的磁特性研究

采用射频磁控溅射方法制备了ＳｍＤｙＦｅＣｏ非晶磁光薄膜，研究了氩气压，溅射功率对ＳｍＤｙＦｅＣｏ薄膜磁特性的影响。实验表明，和ＤｙＦｅＣｏ非晶薄膜相比，ＳｍＤｙＦｅＣｏ非晶薄膜的矫顽力Ｈｃ随温度变化更为缓慢，并且具有更大的垂直磁各向异性常数，因而具有更好的记录特性，本征磁光克尔角可达０．３１，可以作为一种实用化的磁光记录介质。     

电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜，并研究保护层对薄膜的磁和磁光特性的影响。结果表明，AlN薄膜可以增强薄膜磁光效应，同时，AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变。     

双层耦合膜的磁光克尔效应研究

稀土-过渡族金属(RE-TM)非晶垂直磁化膜用于磁光记录材料已被广泛研究。为了提高材料的读出性能,提高分辨率,降低误码率,希望材料有较大的磁光克尔旋转角θ_k。本文采用磁光双层膜耦合结构,将信息的记录和读出分别由记录层(Storage Layer)薄膜和读出层(Readout Layer)薄膜完成,将磁光克尔旋转角θ_k由单层膜的小于0.30°,提高到双层膜的0.38°,较好地解决了这一问题。     

聚焦光斑磁光极克尔磁滞回线的热效应分析

实验设计并组建了一套磁光极克尔磁滞回线测量装置,该装置可以通过改变照射到样品上的激光功率来改变薄膜样品上被聚焦光斑照射的测试点的温度。同时通过计算模拟了激光照射在TbFeCo磁光薄膜上的温度分布情况,得到了薄膜的矫顽力随照射激光功率的变化关系,由此可以确定薄膜的居里温度和补偿温度。为研究磁光薄膜样品在各种温度条件下,磁光性能的变化以及多层磁光薄膜的磁耦合效应提供了有效的手段。     

电介质保护膜对磁光记录膜的磁和磁光特性的影响

采用射频磁控溅射法制备了非晶TbFeCo薄膜及其保护层AlN薄膜 ,并研究保护层对薄膜的磁和磁光特性的影响。结果表明 ,AlN薄膜可以增强薄膜磁光效应 ,同时 ,AlN薄膜对TbFeCo磁光薄膜的矫顽力、垂直磁各向异性以及本征克尔角都有一定的影响。其原因来自于溅射过程中N和Al原子对TbFeCo薄膜表面的轰击而导致的界面特性的改变     

磁光盘的介质膜材料AlN,AlSiN薄膜的电子显微分析

本文研究了磁光盘介质薄膜－ＡｌＮ和ＡｌＳｉＮ薄膜的电子显微结构，通过透射电镜分析了ＡｌＮ薄膜的多晶结构和ｃ轴垂直取向；通过Ｘ射线衍射分析、透射电镜分析和Ｘ射线光电子能谱分析，确定了ＡｌＳｉＮ薄膜并不是多晶ＡｌＮ和ＳｉＮ薄膜的简单组合，而是形成了稳定的非晶特征结构。且ＡｌＳｉＮ薄膜由于其非晶结构而比ＡｌＮ薄膜的磁光克尔效应增强效果更优越。     

离子注入法增强YIG单晶薄膜的磁光效应

利用离子注入技术，将Ce^ 3离子注入到YIG单晶薄膜中，剂量为10^14-10^16ion/cm^2，能量为500keV。对注入前后的样品进行光吸收谱测量，发现注入后的样品光吸收有明显的增加，且样品颜色变深，对样品进行高温退火，可有效地降低光损耗，离子注入样品磁光特性测量表明Ce^ 3薄膜有很大的磁光增强作用，且法拉第旋转角随注入剂量增加而增大。     

真空退火Co/Pt多层膜的结构、磁及磁光特性分析

本文用直流磁控溅射方法制备了Co／Pt多层膜,并对其进行了较为细致的真空退火处理,结果表明,适度的低温退火可增加Co／Pt多层膜的矫顽力,而并不削弱其磁滞克尔回线的矩形特征．当退火温度达到300℃以后,Co／Pt多层膜的矫顽力、垂直各向异性和克尔角将强烈下降,晶体结构的改善及应力的释放、晶粒的增长、层间原子扩散引起的Co层有效厚度减薄,进而居里温度的下降,分别是Co／Pt多层膜在低温、中温、高温退火过程中,磁及磁光性能变化的主要机制．     

Influence of implanted Fe on the Kerr effect of Co6Ag94 granular films

A magneto-optical chip of Fe–(Co₆Ag₉₄) granular films was fabricated by using of combinatorial Fe ions implanting into co-sputtered Co₆Ag₉₄ films and 16 units with different Fe content were prepared via binary masking scheme. The structures and surface morphologies of as-prepared and annealed Fe–Co₆Ag₉₄ films were analyzed by X-ray diffraction and atomic force microscopy respectively. It reveals that the Co, Fe and FeCo granules precipitate, grow and then form nanoparticles embedded in the Ag matrix during annealing. In addition, the measurement of the magneto-optic polar Kerr effect shows that Kerr rotation increases with increasing Fe content, which contributes to the magnetic moment. Precipitation and growth of the magnetic granules during annealing also increase the Kerr rotation due to the size effects. Further, Mössbauer study confirms that the formation of granules with certain size plays a principal role in the enhancement of magneto-optic polar Kerr effect.     

Relaxation of elastoresistance in thin metal films

The change in the resistance of thin evaporated metal films in response to a step strain has been studied. Among the several metal films examined, aluminium and bismuth films exhibited remarkable relaxation, with a time constant of about 1 min at room temperature for a thickness of around 1000 Å. In the case of aluminium films, the time constant was found to decrease with increase of deposition temperature, thickness, annealing period and annealing temperature. In the case of bismuth films, such a clear tendency to decrease was not observed, at least for films thinner than 2 μm. It is suggestef that the resistance relaxation is related to the unusually large stress-strain relaxation which is known to exist in bismuth films. The thickness dependence of the gauge factors of both films is also illustrated.     

Quantifying the stress relaxation modulus of polymer thin films via thermal wrinkling

The viscoelastic properties of polymer thin films can have a significant impact on the performance in many small-scale devices. In this work, we use a phenomenon based on a thermally induced instability, termed thermal wrinkling, to measure viscoelastic properties of polystyrene films as a function of geometric confinement via changes in film thickness. With application of the appropriate buckling mechanics model for incompressible and geometrically confined films, we estimate the stress-relaxation modulus of polystyrene films by measuring the time-evolved wrinkle wavelength at fixed annealing temperatures. Specifically, we use time-temperature superposition to shift the stress relaxation curves and generate a modulus master curve for polystyrene films investigated here. On the basis of this master curve, we are able to identify the rubbery plateau, terminal relaxation time, and viscous flow region as a function of annealing time and temperatures that are well-above its glass transition. Our measurement technique and analysis provide an alternative means to measure viscoelastic properties and relaxation behavior of geometrically confined polymer films.     

影响磁控溅射制备PST/Si薄膜介电特性的几个因素

采用磁控溅射制备了Si基(Pb1-xSrx)TiO3(简称PST/Si)薄膜。测试表明,热处理工艺对PST/Si薄膜介电特性有着一定的影响,适当温度、适当时间的热处理可得到均匀致密的膜层及生长良好的晶粒,从而确保PST薄膜良好的介电特性。样品上电极材料对介电特性也有重要影响。Al较Au电极易氧化,从而易在其与PST薄膜的界面形成一氧化层,增加了串联电阻,导致介电损耗总体上要低。工作频率对材料的介电弛豫特性及漏电导等也会产生影响。     

Hillock formation,hole growth and agglomeration in thin silver films

Thin silver films deposited onto quartz substrates by cathodic sputtering showed hillock growth on annealing in vacuum and in atmospheres of oxygen, helium and argon. Further heating in an oxygen atmosphere caused hole growth and finally led to agglomeration in the films, whereas no hole formation or agglomeration was observed on annealing the films in vacuum and in helium or argon atmospheres. The phenomenon of hillock formation observed in the present case has been explained on the basis of thermal stress relaxation occuring by diffusion creep, with the additional effect of the high surface diffusion of silver atoms on an oxygen-covered silver surface. The hole growth observed as a result of annealing in an oxygen atmosphere could be suitably explained by surface diffusion of silver atoms while the agglomeration occurs during the process of achieving a minimum energy configuration.     

直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.     

X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates

Residual stresses in sputtered ZnO films on Si are determined and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After an 800 °C annealing, ZnO films are tensily stressed while ZnO films encapsulated by Si₃N₄ are stress-free. With the aid of in-situ X-ray diffraction under ambient and argon atmosphere, we argue that this thermally activated stress relaxation may be attributed to a variation of the stoichiometry of the ZnO films.     

Crystalline structure and magnetic and magneto-optical properties of MnSbBi thin films

Mn–Sb–Bi thin films were prepared by successive r.f. or d.c. sputter deposition of elements in a trilayer configuration with either Bi or Sb as the first layer. In-situ transmission electron microscopy (TEM) observations were conducted to investigate the morphology and structure of the films, both as-deposited and after annealing at 623 K for 5 h in a high vacuum furnace. The morphology and structure of all the films are highly dependent on the first-deposited layer. For the annealed film in the configuration of Mn/Bi/Sb// a well-defined hexagonal Mn–Sb–Bi NiAs type structure with the c-axis perpendicular to the film surface was observed. The grain size (100 nm) was two times larger than that of the film having Bi as the first layer. In both kinds of film the easy direction of magnetisation was very close to the film plane. The polar Kerr rotation from the two film structures was approximately 1.0°.     

High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing

Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%.