一种低压低功耗高精度Σ-Δ调制器

设计了一种应用于智能传感器的3阶3位量化离散时间Σ-Δ调制器。采用低失真的CIFF前馈结构,降低了对运算放大器输出摆幅的要求。基于改进的Class AB结构的电流镜跨导运算放大器(OTA),提出了带电容增益复位的有源加法器,降低了加法器中OTA对压摆率的要求,减小了调制器的功耗。采用TSMC 0.18 μm 1P4M CMOS 工艺进行设计与仿真。结果表明,在1 V电源电压下,能够实现有效位数大于16位的高精度,无杂散动态范围(SFDR)达到105 dB,调制器的整体功耗为340 μW。     

一种基于SAR量化器的低功耗音频Δ-Σ调制器

基于0.18 μm CMOS工艺,采用离散3阶前馈结构,设计了一种低功耗音频调制器。采用4位SAR量化器,相比于Flash ADC类型的量化器,减少了比较器的个数,降低了量化器的功耗。与传统的利用有源加法器对输入信号和积分器输出进行求和的方式不同,该设计利用SAR量化器实现输入信号的求和,极大地降低了整个调制器的功耗。此外,调制器采用增益提高型低功耗放大器结构,相比于套筒式共源共栅放大器、折叠式共源共栅放大器等传统类型的放大器,节省了功耗。仿真结果表明,在20 kHz信号带宽、1.8 V电源电压下,调制器的SNDR为94.6 dB,SFDR为107 dB,功耗仅为145 μW。     

一种适用于信号检测的低失真低功耗∑-ΔA/D转换器

采用TSMC 0.18μm混合信号1P6M CMOS工艺,实现了一种适用于传感器信号检测的低失真低功耗Σ-Δ模数转换器(ADC).该ADC的调制器采用前馈结构和128倍过采样率,实现了12.8 MHz的数据流输出;数字滤波器通带纹波限定在±0.001 dB,阻带-80 dB的有效衰减.ADC工作于1.8V电源电压,整体...     

用于单片集成热真空传感器的Σ-Δ调制器设计北大核心

设计了一款适用于集成热真空传感器的二阶1位Σ-Δ调制器。该调制器采用前馈通道抑制积分器的输出摆幅、降低谐波失真、提高动态范围。为了降低运算放大器的1/f噪声,积分器中引入相关双采样电路。利用Matlab/Simulink,分析运算放大器的非理想性对调制器性能的影响。调制器由全差分开关电容电路实现。仿真结果表明:在4 MHz采样频率和6.8 kHz信号输入频率-3、dBFS幅值下,电路的最大信噪比为86.9 dB,分辨率可达14位。调制器的有效面积为0.67 mm2。3 V电源电压供电时,功耗为12 mW,各项性能指标均满足设计要求。     

四阶连续时间正交带通ΣΔ调制器的设计

介绍一个适用于低中频架构的四阶连续时间正交带通ΣΔ调制器的设计,通过采用复数积分器代替传统的谐振器,优化了调制器的噪声整形性能。调制器采用开关电容反馈DAC来减少对时钟抖动的敏感度。电路设计采用smic0.13mixed-signalCMOS工艺,仿真结果表明,在12MHz采样频率下,调制器的信号噪声失真比可达到78dB,其信号带宽为200kHz,中心频率在200kHz。     

用于单片集成热真空传感器的Σ-Δ调制器设计

设计了一款适用于集成热真空传感器的二阶1位Σ-Δ调制器.该调制器采用前馈通道抑制积分器的输出摆幅、降低谐波失真、提高动态范围.为了降低运算放大器的1/f噪声,积分器中引入相关双采样电路.利用Matlab/Simulink,分析运算放大器的非理想性对调制器性能的影响.调制器由全差分开关电容电路实现.仿真结果表明:在4 MHz采样频率和6.8 kHz信号输入频率、-3 dBFS幅值下,电路的最大信噪比为86.9 dB,分辨率可达14位.调制器的有效面积为0.67 mm2.3 V电源电压供电时,功耗为12 mW,各项性能指标均满足设计要求.     

一种消除失调电压的增量型Σ-Δ调制器

基于增量型Σ-Δ调制器理论,利用Matlab的Simulink仿真工具,建立了考虑非理想因素的3阶前馈式增量型Σ-Δ调制器系统模型,并进行了仿真。仿真结果显示,信号噪声比达到98.2 dB,有效输出位达到16.02位。引入消除失调电压的技术后,基于宏力半导体0.18 μm标准CMOS工艺,对3阶前馈式增量型Σ-Δ调制器进行电路和版图设计,Spice后仿真结果显示,信号噪声比达到92.79 dB,有效输出位达到15.12位。     

一种用于ADSL的11mW 79dB动态范围的ΔΣ调制器

随着工艺的进步,△∑A/D只适用于低速高精度领域的观念正在被打破。本论文设计一个单环二阶前馈反馈混合型多比特△∑调制器,用于ADSL。为了能让PH2相向PH1相借用12%的时间,以降低对运放、比较器和DEM单元速度的要求,本论文改进了传统的不交叠时钟产生电路。为解决无源加法器时钟馈通对比较结果的影响,调整了比较器和加法器的时序。 本设计采用1.8V电源电压,UMC 0.18um CMOS工艺。芯片测试结果显示：在80MHz时钟频率,32倍过采样下,调制器达到了79dB动态范围,71.3dB SNDR,11mW功耗和1.47pJ/step的FOM值。     

三阶级联Sigma-Delta调制器设计

介绍2-1级联的三阶调制器设计结构，讨论信号比例系数、积分增益系数和电路非理想特性对调制器系统的性能影响：运用SIMULINK对调制器建模并仿真，模型中考虑．开关电容积分器的非理想因素对整个调制器的影响．并通过调整信号比例和积分增益系数来确定调制器性能和电路要求。当采样率为125和时钟频率2．50MHz时．该模型结构得到93dB的信噪失真比，可应用于实际的电路系统。     

一种高性能多位量化Σ-Δ调制器的设计

实现了一种适用于信号检测的低功耗Σ-Δ调制器。调制器采用2阶3位量化器结构,并使用数据加权平均算法降低多位DAC产生的非线性。调制器采用TSMC 0.18μm混合信号CMOS工艺实现。该调制器工作于1.8V电源电压,在50kHz信号带宽和12.8MHz采样频率下,整体功耗为3mW,整体版图尺寸为1.25mm×1.15mm。后仿真结果显示,在电容随机失配5‰的情况下,该调制器可以达到91.4dB的信噪失真比(SNDR)和93.6dB的动态范围(DR)。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NOTICE OF CHANGING JOURNAL OF ELECTRONICS （CHINA） TO MICROSYSTEMS ＆ NANOENGINEERING

正Journal of Electronics(China)(JE)was founded in 1984,sponsored by the Institute of Electronics,Chinese Academy of Sciences.JE is one of the first English academic journals in China in the field of Electronics and Information technology.The journal was published quarterly since it was launched in 1984 to 2003,then it is published bimonthly till now.During