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应用射频磁控溅射工艺在Pt/Ti/SiO2/Si衬底上制备具有钙钛矿结构的PZT铁电薄膜。对影响PZT薄膜性能、形貌的工作气压、基片温度、氧/氩 氧之比、溅射功率、退火温度5个主要因素进行分析,在其允许范围和精度内设置5个水平,并根据均匀设计理论对该5因素及5水平进行均匀设计。不同温度下退火之后测定了PZT薄膜的厚度、SEM表面形貌、电容、介电损耗、电滞回线(包括矫顽场强、饱和极化强度、剩余极化强度)等。最后对响应结果进行多元二次线性回归,得出了回归方程。探讨达到最优化薄膜特性所需要的工艺条件。 相似文献
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铁电存储器中Pb(Zr,Ti)O_3集成铁电电容的制备 总被引:1,自引:0,他引:1
在铁电不挥发存储器 (FERAM)技术中 ,集成铁电电容的制备是关键工艺之一。文中提出一种制备集成铁电电容的改进工艺 :采用 lift-off技术在衬底样品表面淀积铁电电容 Pt/Ti下电极 ,然后用 Sol-Gel方法制备 PZT薄膜。在 PZT薄膜未析晶前 ,先将它加工成电容图形 ,再高温退火成为 PZT铁电薄膜。最后完成铁电电容 Pt上电极。与传统工艺相比 ,改进后的工艺能保持 PZT铁电薄膜与金属上电极之间良好的接触界面。测试结果表明 ,工艺条件的变动不会影响 PZT铁电薄膜的成膜和结构 ,从而可得到性能优良的铁电电容。 相似文献
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RF溅射法制备PZT铁电薄膜及其表征 总被引:1,自引:0,他引:1
采用对靶溅射法在SiO2/Si基板上沉积Pt/Ti底电极,用射频(RF)溅射法在Pt/Ti/SiO2/Si基板上制备了厚度约800 nm的PZT薄膜。XRD分析表明,Ar气氛中沉积,700℃下快速退火(RTA)20 min所得的PZT薄膜具有钙钛矿结构;SEM、AFM分析表明,该条件下所得薄膜的表面由平均粒径约219 nm的晶粒组成,较为均匀、致密。在1 kHz的测试频率下,PZT薄膜的介电常数为327.6,从电滞回线上可以得出,该PZT薄膜的矫顽场强为50 kV/cm,剩余极化强度和自发极化强度分别为10μC/cm2、13μC/cm2。 相似文献
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用磁控溅射法在Pt/Ti/SiO2 /Si衬底上制备了PbZr0 .52 Ti0 .4 8O3(PZT)薄膜 .XRD结果表明经过退火后的PZT薄膜呈现多晶结构 .通过红外椭圆偏振光谱仪测量了λ为 2 .5~ 12 .6 μm范围内PZT薄膜的椭偏光谱 ,采用经典色散模型拟合获得PZT薄膜的红外光学常数 ,同时拟合得到未经处理的PZT薄膜和退火后PZT薄膜的厚度分别为 45 4.2nm和 45 0 .3nm .最后通过拟合计算得到结晶PZT薄膜的静态电荷值为 |q|=1.76 9± 0 .0 2 4.这说明在磁控溅射法制备的PZT薄膜中 ,电荷的转移是不完全的 . 相似文献
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通过溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO_2/Si基底上制备了多层PT/PZT(PbTiO_3/Pb(Zr_(0.52)Ti_(0.48))O_3)薄膜,研究了不同退火时间对其纳米结构、结晶性能及相变特性的影响。利用FESEM测试了不同退火时间对薄膜纳米结构的影响,选用XRD与Raman分析了薄膜的结晶取向及相变特点。实验结果表明,随着退火时间的增加,薄膜的三方相向四方相转变,并具有(110)择优取向。退火时间为20min是PZT薄膜的最佳退火时间,此时薄膜的结晶效果良好、晶粒大小均匀、具有纯钙钛矿结构,此种结构的薄膜有望应用于MEMS器件中。 相似文献
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利用Sol-Gel法在Pt/TiO2/SiO2/Si基底上用快速热处理(Rapid Thermal Processing,RTP)退火工艺制备出了致密的PZT铁电薄膜,主要研究了在退火时间为500s时退火温度对薄膜的结晶结构、表面形貌和铁电性能的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和铁电测试仪对制备的薄膜进行了性能表征。研究结果表明,当退火温度为6000C时,PZT薄膜具有(111)择优取向,表面致密无裂纹,且具有较好的铁电性能(其饱和极化值约为30 C/cm2,剩余极化约为20 C/cm2,矫顽场约为150KV/cm)。在100KV/cm电场下,电流密度J在10-1A/cm2数量级,表明所制的PZT纳米薄膜质量较好,能承受较高的场强以达到饱和极化状态而不被击穿。 相似文献
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《Microelectronics Journal》1992,23(8):665-669
The high-Tc superconducting material YBa2 Cu3 Oy, well known as a 1–2–3 compound, shows other very interesting properties. One of them is very strong conductivity-oxygen content dependence. On the basis of our previous measurements, an investigation of dilatation synthesis, X-ray diffraction (XRD) analysis and conductivity measurements were performed. The results on quenched and slowly cooled samples show a phase transition region and an obvious interdependence between conductivity, unit cell volume and oxygen content. 相似文献
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The impact of various rapid thermal annealing used during the integration on the La2O3/HfO2 and HfO2/La2O3 stacks deposited by Atomic Layer deposition was analyzed. The consequences of lanthanum localization in such stacks on the evolution of the films during the rapid thermal annealing are investigated in term of morphology, crystalline structure, silicate formation and film homogeneity as a function of the depth. It appeared that the La2O3 location has an impact on the temperature of the quadratic phase formation which could be linked to the formation of SiOHfLa silicate and the resistance of the films to dissolution in HF 0.05 wt%. 相似文献
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Takeyasu Saito Yukihiro Shimogaki Katsuro Sugawara Shinji Nagata Hiroshi Komiyama 《Microelectronic Engineering》2006,83(10):1994-2000
This paper describes reaction kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2, focusing on the effect of added H2, SiH4, and Si2H6 as an active reaction initiator. Our studies indicate that the temperature at which film formation is extinguished, Tex, can be lowered by introducing H2 instead of the standard Ar carrier gas. For a SiH2Cl2/WF6 pressure ratio of 20, H2 addition changed the deposition mode from selective W deposition to blanket WSix deposition. The added H2 also improved the step-coverage profile for substrate temperatures below 600 °C. Measured step coverage profiles indicate that the activation energy of deposition species was 147 kJ/mol. Adding either SiH4 or Si2H6 can assist the film-forming reactions to achieve acceptable Si/W atomic composition ratios. Under these conditions, the residual fluorine concentration remained at acceptably low levels that are typical of conventional WF6/SiH2Cl2 CVD processes. 相似文献
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用XeF激光的351毫米微来激励Na_2(x~1Σ_g~ )得到c~1Π_u→2~1Σ_g~ 跃迁范围内三条受激发射谱线及b~3Σ_g~ →x~3Σ_u~ 830毫微米至900毫微米准连续发射谱。文中讨论了这两个跃迁的关联并估计了产生激光振荡的可能性。 相似文献
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以钛酸丁酯和乙酸钡为起始原料,采用液相法制备了纳米钛酸钡。研究了纳米钛酸钡和碳酸锰的掺杂对普通亚微米级钛酸钡的形貌及介电性能的影响。结果表明,在普通钛酸钡中加入一定量的纳米钛酸钡可以促进晶粒的生长,同时提高陶瓷的介电常数。而在普通钛酸钡中加入一定量的碳酸锰则可以抑制晶粒的生长。但同时添加碳酸锰和纳米钛酸钡,碳酸锰对晶粒生长的抑制作用将居于主导地位,并且此时钛酸钡陶瓷的介电常数温度特性曲线与单独添加锰离子时的走势基本相同,室温附近的介电常数峰将由于钛酸钡陶瓷的细晶效应而弥散。 相似文献
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Horng Nan Chern Chung Len Lee Tan Fu Lei 《Electron Device Letters, IEEE》1993,14(3):115-117
It is reported for that H2 plasma followed by O2 plasma is more effective for passivating grain boundary states in polysilicon thin film. Polysilicon thin-film transistors (TFTs) made after H2/O2 plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I on/I off over 1×108, and an electron mobility of 40.2 cm2 /V-s 相似文献
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E. Atanassova N. Novkovski D. Spassov A. Paskaleva A. Skeparovski 《Microelectronics Reliability》2014
The Time-Dependent-Dielectric Breakdown (TDDB) characteristics of MOS capacitors with Hf-doped Ta2O5 films (8 nm) have been analyzed. The devices were investigated by applying a constant voltage stress at gate injection, at room and elevated temperatures. Stress voltage and temperature dependences of hard breakdown of undoped and Hf-doped Ta2O5 were compared. The doped Ta2O5 exhibits improved TDDB characteristics in regard to the pure one. The maximum voltage projected for a 10 years lifetime at room temperature is −2.4 V. The presence of Hf into the matrix of Ta2O5 modifies the dielectric breakdown mechanism making it more adequate to the percolation model. The peculiarities of Weibull distribution of dielectric breakdown are discussed in terms of effect of three factors: nature of pre-existing traps and trapping phenomena; stress-induced new traps generation; interface layer degradation. 相似文献
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TiO_2/SiO_2、ZrO_2/SiO_2多层介质膜光学损耗及激光损伤研究 总被引:9,自引:0,他引:9
以TiO_2/SiO_2及ZrO_2/SiO_2多层介质膜为例,测试了不同工艺条件及不同膜系结构下薄膜样品的光学损耗及激光损伤阈值,同时对实验结果作了初步的分析讨论. 相似文献
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M. von Haartman D. Wu B. G. Malm P. -E. Hellstrm S. -L. Zhang M.
stling 《Solid-state electronics》2004,48(12):2271-2275
Low-frequency noise was characterized in Si0.7Ge0.3 surface channel pMOSFETs with ALD Al2O3/HfO2/Al2O3 stacks as gate dielectrics. The influences of surface treatment prior to ALD processing and thickness of the Al2O3 layer at the channel interface were investigated. The noise was of the 1/f type and could be modeled as a sum of a Hooge mobility fluctuation noise component and a number fluctuation noise component. Mobility fluctuation noise dominated the 1/f noise in strong inversion, but the number fluctuation noise component, mainly originating from traps in HfO2, also contributed closer to threshold and in weak inversion. The number fluctuation noise component was negligibly small in a device with a 2 nm thick Al2O3 layer at the SiGe channel interface, which reduced the average 1/f noise by a factor of two and decreased the device-to-device variations. 相似文献