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1.
Van der Waals heterostructures (VDWHs), obtained via the controlled assembly of 2D atomically thin crystals, exhibit unique physicochemical properties, rendering them prototypical building blocks to explore new physics and for applications in optoelectronics. As the emerging alternatives to graphene, monolayer transition metal dichalcogenides and bottom-up synthesized graphene nanoribbons (GNRs) are promising candidates for overcoming the shortcomings of graphene, such as the absence of a bandgap in its electronic structure, which is essential in optoelectronics. Herein, VDWHs comprising GNRs onto monolayer MoS2 are fabricated. Field-effect transistors (FETs) based on such VDWHs show an efficient suppression of the persistent photoconductivity typical of MoS2, resulting from the interfacial charge transfer process. The MoS2-GNR FETs exhibit drastically reduced hysteresis and more stable behavior in the transfer characteristics, which is a prerequisite for the further photomodulation of charge transport behavior within the MoS2-GNR VDWHs. The physisorption of photochromic molecules onto the MoS2-GNR VDWHs enables reversible light-driven control over charge transport. In particular, the drain current of the MoS2-GNR FET can be photomodulated by 52%, without displaying significant fatigue over at least 10 cycles. Moreover, four distinguishable output current levels can be achieved, demonstrating the great potential of MoS2-GNR VDWHs for multilevel memory devices.  相似文献   

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The integration of dissimilar materials into heterostructures is a mainstay of modern materials science and technology. An alternative strategy of joining components with different electronic structure involves mixed-dimensional heterostructures, that is, architectures consisting of elements with different dimensionality, for example, 1D nanowires and 2D plates. Combining the two approaches can result in hybrid architectures in which both the dimensionality and composition vary between the components, potentially offering even larger contrast between their electronic structures. To date, realizing such heteromaterials mixed-dimensional heterostructures has required sequential multi-step growth processes. Here, it is shown that differences in precursor incorporation rates between vapor–liquid–solid growth of 1D nanowires and direct vapor–solid growth of 2D plates attached to the wires can be harnessed to synthesize heteromaterials mixed-dimensional heterostructures in a single-step growth process. Exposure to mixed GeS and GeSe vapors produces GeS1−xSex van der Waals nanowires whose S:Se ratio is considerably larger than that of attached layered plates. Cathodoluminescence spectroscopy on single heterostructures confirms that the bandgap contrast between the components is determined by both composition and carrier confinement. These results demonstrate an avenue toward complex heteroarchitectures using single-step synthesis processes.  相似文献   

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Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 109 A W−1) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high-performance photodetectors and integrated optoelectronic applications is reviewed.  相似文献   

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Graphene is being actively explored as a candidate material for flexible and stretchable devices.However,the development of graphene-based flexible photonic devices,i.e.photodetectors,is hindered by the low absorbance of the single layer of carbon atoms.Recently,van der Waals bonded carbon nanotube and graphene hybrid films have demonstrated excellent photoresponsivity,and the use of vein-like carbon nanotube networks resulted in significantly higher mechanical strength.Here,we report for the first time,a flexible photodetector with a high photoresponsivity of ~ 51 A/W and a fast response time of ~ 40 ms over the visible range,revealing the unique potential of this emerging all-carbon hybrid films for flexible devices.In addition,the device exhibits good robustness against repetitive bending,suggesting its applicability in large-area matrix-array flexible photodetectors.  相似文献   

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Van der Waals (vdW) heterostructures combining layered ferromagnets and other 2D crystals are promising building blocks for the realization of ultracompact devices with integrated magnetic, electronic, and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing for realizing highly uniform heterostructures with well-defined interfaces between different 2D-layered materials. It is also required that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, it is demonstrated that the large-area growth of Fe5−xGeTe2/graphene heterostructures is achieved by vdW epitaxy of Fe5−xGeTe2 on epitaxial graphene. Structural characterization confirms the realization of a continuous vdW heterostructure film with a sharp interface between Fe5−xGeTe2 and graphene. Magnetic and transport studies reveal that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond nonscalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.  相似文献   

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2D materials have become a major focus in material science due to their exotic properties originated from quantum confinement effects. Van der Waals heterostructures composed of 2D materials and conventional semiconductors always show enhanced optoelectronic performance and have attracted much attention in recent years. Here, high performance photodetectors based on graphene–WS2–Si van der Waals heterostructure is reported. The photodetector shows wide spectrum response from visible to near infrared with a maximum photoresponsivity of 54.5 A W−1 at 800 nm. Furthermore, the photodetector has a fast response speed with rise time of 45 µs and decay time of 210 µs. Photocurrent mapping shows that not only the graphene–WS2–Si area, but also the graphene–WS2–SiO2–Si area contributes to the photocurrent. With the increase of lateral size of the junction area, the photoresponsivity is reduced due to increased recombination. The response speed decreases with the increase of lateral size of the junction area, which is due to increased junction capacitance. The results indicate that this kind of van der Waals heterostructure has excellent photodetection performance and is suitable for application in high performance broadband photodetectors. Also, the simple fabrication method has a great potential for large scale device integration.  相似文献   

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Magnetic van der Waals (vdW) materials are the centerpiece of atomically thin devices with spintronic and optoelectronic functions. Exploring new chemistry paths to tune their magnetic and optical properties enables significant progress in fabricating heterostructures and ultracompact devices by mechanical exfoliation. The key parameter to sustain ferromagnetism in 2D is magnetic anisotropy—a tendency of spins to align in a certain crystallographic direction known as easy‐axis. In layered materials, two limits of easy‐axis are in‐plane (XY) and out‐of‐plane (Ising). Light polarization and the helicity of topological states can couple to magnetic anisotropy with promising photoluminescence or spin‐orbitronic functions. Here, a unique experiment is designed to control the easy‐axis, the magnetic transition temperature, and the optical gap simultaneously in a series of CrCl3?xBrx crystals between CrCl3 with XY and CrBr3 with Ising anisotropy. The easy‐axis is controlled between the two limits by varying spin–orbit coupling with the Br content in CrCl3?x Brx. The optical gap, magnetic transition temperature, and interlayer spacing are all tuned linearly with x. This is the first report of controlling exchange anisotropy in a layered crystal and the first unveiling of mixed halide chemistry as a powerful technique to produce functional materials for spintronic devices.  相似文献   

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The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue toward engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. Direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines the effect of electrical doping on the electronic band structure of twisted bilayer graphene using a back-gated device architecture for angle-resolved photoemission measurements with a nano-focused light spot. A twist angle of 12.2° is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.  相似文献   

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Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low‐energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self‐limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll‐like islands with thicker, well‐defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large‐scale integration.  相似文献   

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A long‐standing puzzle about van der Waals semiconductors (vdWS) is regarding the origin(s) of the conduction behavior they exhibit. Of particular interest are those with ambipolar conduction, which may provide an alternative choice for practical applications when considering the difficulties of doping the ultrathin bodies of vdWS. Here, the conduction behavior of ambipolar vdWS is analytically and theoretically studied. Using numerical simulation, it is shown that ambipolar vdWS can be fully captured by a Schottky‐barrier FET model. Based on this, it is found that the widely observed conduction polarity transition while changing the body thickness mainly comes from the tuning of band alignment at the metal/vdWS interfaces. This transition can be suppressed/inversed by introducing an inert hBN layer between the vdWS and the substrate. Through first‐principles calculations, it is demonstrated that metal/vdWS/substrate interactions play a crucial role in tuning the Schottky‐barrier heights, which finally determines the conduction behavior that ambipolar vdWS exhibit.  相似文献   

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The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.  相似文献   

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A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long-range ordered pattern in low-dimensional materials. Although the understanding of the fundamental character of CDW is enriched after extensive studies, its practical application remains limited. Here, an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS2 van der Waals heterostructures is shown by manipulating the distinct CDW phases in 1T-TaS2. Whereas CSI from spins polarized in all three directions is observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears, and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains in the heterostructure are at the origin of the switching of CSI. The results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.  相似文献   

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Van der Waals hybrids of graphene and transition metal dichalcogenides exhibit an extremely large response to optical excitation, yet counting of photons with single‐photon resolution is not achieved. Here, a dual‐gated bilayer graphene (BLG) and molybdenum disulphide (MoS2) hybrid are demonstrated, where opening a band gap in the BLG allows extremely low channel (receiver) noise and large optical gain (≈1010) simultaneously. The resulting device is capable of unambiguous determination of the Poissonian emission statistics of an optical source with single‐photon resolution at an operating temperature of 80 K, dark count rate 0.07 Hz, and linear dynamic range of ≈40 dB. Single‐shot number‐resolved single‐photon detection with van der Waals heterostructures may impact multiple technologies, including the linear optical quantum computation.  相似文献   

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All-optical modulators are attracting significant attention due to their intrinsic perspective on high-speed, low-loss, and broadband performance, which are promising to replace their electrical counterparts for future information communication technology. However, high-power consumption and large footprint remain obstacles for the prevailing nonlinear optical methods due to the weak photon–photon interaction. Here, efficient all-optical mid-infrared plasmonic waveguide and free-space modulators in atomically thin graphene-MoS2 heterostructures based on the ultrafast and efficient doping of graphene with the photogenerated carrier in the monolayer MoS2 are reported. Plasmonic modulation of 44 cm−1 is demonstrated by an LED with light intensity down to 0.15 mW cm−2, which is four orders of magnitude smaller than the prevailing graphene nonlinear all-optical modulators (≈103 mW cm−2). The ultrafast carrier transfer and recombination time of photogenerated carriers in the heterostructure may achieve ultrafast modulation of the graphene plasmon. The demonstration of the efficient all-optical mid-infrared plasmonic modulators, with chip-scale integrability and deep-sub wavelength light field confinement derived from the van der Waals heterostructures, may be an important step toward on-chip all-optical devices.  相似文献   

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