Electrical properties of (Ni1−x )Li x )O (x=0.1 and 0.2) under various relative humidities

Rocksalt-type (Ni_1–x Li _x )O (x=0.1 and 0.2) was synthesized at 1350° C in air and its electrical resistivity (R) was measured under various relative humidities (H). R increases with increasing H in the range 0H79%, reaches a maximum value, then decreases in the range 79%<H100%. The increase in R is explained by an electron boundary layer model. On the other hand, the decrease in R is explained by ionic conductivity.     

Effect of reducing atmosphere on the magnetism of Zn(1-x)Co(x)O (0≤x≤0.10) nanoparticles

We report the crystal structure and magnetic properties of Zn(1-x)Co(x)O?(0≤x≤0.10) nanoparticles synthesized by heating metal acetates in organic solvent. The nanoparticles were crystallized in the wurtzite ZnO structure after annealing in air and in a forming gas (Ar95%?+?H5%). The x-ray diffraction and x-ray photoemission spectroscopy (XPS) data for different Co content show clear evidence for the Co(2+) ions in tetrahedral symmetry, indicating the substitution of Co(2+) in the ZnO lattice. However, samples with x = 0.08 and higher cobalt content also indicate the presence of Co metal clusters. Only those samples annealed in the reducing atmosphere of the forming gas, that showed the presence of oxygen vacancies, exhibited ferromagnetism at room temperature. The air annealed samples remained non-magnetic down to 77?K. The essential ingredient in achieving room temperature ferromagnetism in these Zn(1-x)Co(x)O nanoparticles was found to be the presence of additional carriers generated by the presence of the oxygen vacancies.     

X-ray Diffraction Study of the Nanostructure Resulting from Decomposition of (ZrC)1 –x (NbC) x Solid Solutions

Solid-state decomposition of nearly equimolar ZrC–NbC solid solutions was studied by x-ray diffraction. The results demonstrate that annealing broadens the diffraction peaks from the solid solutions. Analysis of the peak width as a function of the diffraction angle indicates that the broadening is due to the decomposition of the solid solution into two coherent isostructural (B1) phases close in lattice parameter (0.4573 and 0.4561 nm) and the formation of nanometer-sized (70 nm) grains. The nanostructure remains stable during long-term (100 to 700 h) annealing between 670 and 1270 K.     

Thermal Diffusivity of La1−x Sr x MnO3 (x < 0.3)

Perovskite manganites are interesting because of their colossal magnetoresistance. In this work high resolution thermal diffusivity measurements of La_1–x Sr _x MnO₃ (0 x 0.3) single crystals in the temperature range from 250 to 400 K are presented. A photopyroelectric device in the standard back configuration has been used. The thermal diffusivity through second-order magnetic phase transitions, as well as through first- and second-order structural phase transitions has been measured. The critical parameters of the sample with x = 0.3 at the ferromagnetic-to-paramagnetic transition have been obtained, and are close to the values predicted by the Ising model.     

Magnetic properties of (Fe1−x M x )7Se8

The temperature dependence of the magnetization of the quenched and slowly cooled samples of Fe₇Se₈ and (Fe_1–x M _x )₇Se₈ samples with M = cobalt and nickel and x=0.02, 0.05 and 0.08 are given. All the thermomagnetic curves obtained belong to the Weiss ferrimagnetic type. Discontinuities indicating a magnetic transformation to antiferromagnetic order were obtained for some samples. The magnetic moment at 0 and 78 K (M ₀ and M₇₈) dependence on nickel and cobalt concentrations are given. The temperature dependence of the reciprocal susceptibility in the paramagnetic range was studied, and the asymptotic Curie points are given. The values of the effective magnetic moment, _eff, and the number of unpaired electrons were calculated. The thermal variation of the electrical conductivity of the host material, Fe₇Se₈, is given.     

Growth of perfect-crystal Si-Si1−x Gex-(Ge2)1−x (InP)x structures from the liquid phase

Structures comprising Si-Si_1−x Ge_x-(Ge₂)_1−x (InP)_x with an intermediate Si_1−x Ge_x buffer layer were grown on silicon substrates. Morphological examinations, scanning patterns and diffraction spectra, and also the electrophysical and luminescence properties of the heterostructures were used to show that the crystal perfection of these structures depends on the choice of liquid-phase epitaxy conditions. Pis’ma Zh. Tekh. Fiz. 25, 37–40 (December 26, 1999)     

Temperature dependence of elastic and dielectric properties of (Bi2O3)1 − x(CuO)x oxide glasses

Oxide glasses with the general formula (Bi₂O₃)_{1 - x}(CuO)_x have been prepared by quick quenching technique. Their longitudinal and shear elastic moduli have been determined by measuring the corresponding ultrasonic wave velocities between 300 and 470 K, which are well below the glass transition temperature of this system. Temperature variation of ultrasonic velocity and attenuation exhibit anomalies around 435 K in glasses with x 0.3. A nonlinear behaviour is also reflected in the CuO concentration dependent dielectric constant curve around x = 0.3. These anomalies are interpreted in terms of a structural softening (or transformation) taking place in samples having CuO concentration above the critical value. The high dielectric constant of these glasses show very little increase with increase of temperature. Anomalies are also found in the temperature dependence of dielectric constant around 435 K. This behaviour is again considered to be associated with the softening of the glass network.     

Microwave dielectric properties of Ba(Sn x Zn(1−x)/3Nb(1−x)2/3)O3 (0 ⩽ x ⩽ 0.32) ceramics

The dielectric properties of the (1–x)Ba(Zn_1/3Nb_2/3)O₃–xBaSnO₃ (0 x 0.32) composition at microwave frequencies were investigated in this study. With the addition of BaSnO₃, the dielectric Q(Q _d) value of Ba(Zn_1/3Nb_2/3)O₃ (BZN) can be improved and a small temperature coefficient of resonant frequency (_f) can be achieved. When 22.6 mol % of Sn is added to BZN, the characteristics of the Ba(Sn_0.226Zn_0.258Nb_0.516)O₃ ceramics sintered at 1500°C are as follows: dielectric constant _r = 32, _f = + 12 p.p.m.°C¹ and high Q _d value of 9700 at 10 GHz. Based on the classical dispersion theory and the logarithmic mixing rule, the effects with additions of substitutional element of BaSnO₃ on the microwave dielectric properties of Ba(Zn_1/3Nb_2/3)O₃ can be mostly explained.     

Plastic behaviour of Cd x Hg1−x Te (0⩽ x⩽1) crystals

Cd _x Hg_1–x Te (0x1) single crystals were strained by microhardness and by constant strain rate uniaxial compression tests, in the temperature range 300 to 600 K. Hardness curves as function of temperature can be described by empirical relations. Stress-strain curves, relaxation tests and dislocation observations using transmission electron microscopy show that the deformation is controlled by a thermally activated Peierls mechanism. Moreover, dislocations are dissociated with a stacking fault energy which does not depend on thex composition.     

Photoconductivity in single crystals of (TlGaSe2)1−x(TlInS2)x alloys (0−0.45 ≤ x ≤0.55-1)

The spectral distribution of the photoconductivity in (TlGaSe₂)_1−x(TlInS₂)_x single crystals has been studied at 77 K and 300 K. At O ≤ x ≤ 4, Eg is observed to vary linearly with x. Eg(x) deviates from linearity at x = 0.6. This deviation is attributed to the effect of disorder in the composition. Over the range 0.6 to 2.2 eV pronounced impurity photoconductivity is detected at 77 K and 300 K. Deep impurity levels and their neighbourhood in this alloy are established to preserve their positions with the variation in the composition. The analysis of the obtained results indicates that the impurity centres are mainly connected with the cation neighbourhood.     

Phase Formation in the Course of Oxidation of In x Se1 − x Alloys (0.47 ≤ x ≤ 0.53)

We have determined the characteristic temperature ranges of heating of In _x Se_{1 – x} (0.50 x 0.52) alloys in air. We have established that the annealing of InSe powder in selenium vapors leads to the stabilization of the rhombohedral structure.     

Analysis of indentation size effect (ISE) behavior in low-load Vickers microhardness testing of (Sm123)1−x(Nd123)x superconductor system

Indentation size effect (ISE) for (Sm123)_1?x(Nd123)_x superconducting samples which were fabricated by the solid state reaction technique for values of x = 0.00, 0.05, 0.10, 0.20, and 0.30 was investigated by analyzing the theoretical models. When the experimental data of a number of single crystals which have the different crystal structure and different chemical bonding inside the polycrystallined samples were analyzed with the ISE models, the sample encountering with resistance and elastic deformation was observed as well as plastic deformation. The microhardness values on different surfaces of materials were calculated by using Meyer Law, proportional specimen resistance model, modified proportional specimen resistance model, elastic/plastic deformation model and the Hays–Kendall (HK) approach. The results showed that the HK approach was determined as the most successful model. Furthermore, X-ray powder diffraction and scanning electron microscope measurements were analyzed for superconducting properties of (Sm123)_1?x(Nd123)_x superconductor system. The results showed that microhardness values at the minimum load and averaged plateau region of load increased with increase of Nd123 concentration. Nd123 content can be used as to be estimated the microhardness value of (Sm123)_1?x(Nd123)_x superconducting sample in the range of 0.878–2.717 GPa. The control of the microhardness value by using Nd123 content in (Sm123)_1?x(Nd123)_x superconducting structure can be useful in technological applications in superconductivity industry.     

Influence of the cation sublattice defectness on the electronic thermoelectric power of Li x Cu(2−x)−δ (x ≤ 0.25)

This paper presents an experimental study of the electronic thermoelectric power as a function of copper content for Li _x Cu_(2?x)?δS (x ≤ 0.25) electronic-ionic mixed conductors. Using a vacancy model for lattice defects, we calculate their electronic thermoelectric power as a function of x. By adjusting the hole effective mass, we reach satisfactory agreement with experimental data.     

Mixtures of (N2)1−x : (O2) x at High Pressures and Low Temperatures

We performed Raman measurements at 18 K and pressures up to 25 GPa in order to construct a tentative phase diagram of the (N ₂)_1–x :(O ₂)_x –system at low temperatures. We varied the composition of the mixed system over the whole concentration range. Here we focused on the systems with high nitrogen concentration and pressures above 2 GPa. It is known that at room temperature oxygen is highly solvable in the –phase of N ₂. The experimental results show that oxygen suppresses the disorder–order transition –N ₂.     

Thermoelectric Properties of TlIn1 – x Yb x Te2 (0.01 ≤ x ≤ 0.09) Crystals

The thermoelectric properties of TlIn_{1 – x} Yb _x Te₂ (0.01 x 0.09) crystals are studied. The results indicate that the crystals possess high thermoelectric figures of merit in the range 500–700 K.     

The design and properties of pseudobinary alloys (PbTe)1−x–(SnTe)x with gradient composition

The pseudobinary thermoelectric alloys (PbTe)_1−x–(SnTe)_x (0≤x≤0.4) doped with 0.02 mol% Ag concentration were prepared by pressureless sintering (PS), and their properties were optimized to fit the preparation of functionally graded materials (FGM) with gradient composition. The calculation shows that the FGM can raise the maximal power output to approximately 200.0 (W m⁻²), at least 21% greater than that of the best monolithic alloys (PbTe)_0.6–(SnTe)_0.4. The measurement shows that the maximum power output of FGM is about 175.0 (W m⁻²), and at least increases by about 16% as compared to those of any monolithic materials (PbTe)_1−x–(SnTe)_x (0≤x≤0.4) without or with different Ag concentration doping.     

Preparation and Structure of Ga2 – x Sc x O3 (0.42 ≤ x ≤ 0.52)

The structure of a scandium gallium oxide single crystal grown by the Czochralski process from a charge of composition Ga_1.5Sc_0.5O₃ is determined by x-ray diffraction. The structure is shown to be a superstructure to -Ga₂O₃. The superstructure parameters are found to vary both along the axis of the crystal and radially, which is due to variations in Ga : Sc ratio. A structural model of the Ga_1.5Sc_0.5O₃ crystal is proposed.     

Annealing behaviors of quench-deposited (CsCl)1−x(PbCl2)x films studied by optical absorption spectroscopy

All the films of the (CsCl)_1−x(PbCl₂)_x system prepared by quench deposition exhibit a similar fundamental absorption spectrum over the full mixing range. On annealing the films, drastic changes occur in the spectra showing three characteristic types of spectral features depending on the mixing ratio. Type 1 (x≥0.7) suggests the formation of mixed crystals of a PbCl₂ base. Type 2 (0.5≥x≥0.3) exhibits the spectrum of CsPbCl₃ crystal. Type 3 (x=0.1, 0.05), the most characteristic, is the spectrum of Cs₄PbCl₆ crystal, which was observed for the first time. The spectrum of the Cs₄PbCl₆ crystal exhibits novel structures. Despite the crystalline entity of the compound, it shows oscillator-like fundamental absorption and a wide (≈1 eV) window just above the first absorption peak, suggesting the peculiarity of the associated energy band structure. To a first approximation, the spectrum is explainable in terms of Pb²⁺-ion excitation of the Pb²⁺(Cl⁻)₆ quasi-complexes.     

Preparation of the single phase γ′-(Fe1−x Ni x )4N compounds (0 ≤x ≤ 0.6)

Single phase -Fe₄N type (Fe_1–xNi_x)₄N compounds (0 x 0.6 have been synthesized for the first time by controlled heat treatment of iron-nickel oxalates in a gaseous flow of NH₃ xand H₂. The preparation processes were investigated using differential scanning calorimetry (DSC), X-ray diffraction and Mössbauer spectroscopy. The results confirmed that annealing of oxalates in the NH₃ and H₂ atmosphere included the processes of dehydration, decomposition and reduction, nitrogenation and thermal decomposition of the nitrides. The decomposition and reduction occur simultaneously. The final products depend on the flow rate ratio of NH₃ H₂ and the annealing temperature. The formation conditions for the single phase -Fe₄N type (Fe_1–xNi_x)₄N compounds are related to the nickel concentration, with increasing nickel content, the nitrogenation temperature decreased, in contrast the flow rate ratio of NH₃ H₂ increased.     

A comparison of strain relief behaviour of In x Ga1− x As alloy on GaAs (001) and (110) substrates

A comparative study on the strain relief behaviour of epitaxially grown In _x Ga_{1 – x} As (where 0.1 × 1) alloys on GaAs (001) and (110) were carried out using transmission electron microscopy (TEM) and high resolution X-ray diffraction (XRD). Three different strain relief mechanisms related to the formation of misfit dislocations (MDs) were observed. The dominant strain relief process can be a single mechanism or a combination of two of the three mechanisms depending on the substrate orientation and the in content.