Formation of columnar and equiaxed grains by the reduction of U3O8 pellets to UO2+x

The reduction of U₃O₈ pellets to UO_2+x has been investigated at 1300 °C in H₂, Ar and CO₂ gas atmospheres by TGA, SEM, and X-ray diffraction. The selected U₃O₈ pellet was prepared by sintering a U₃O₈ powder compact. The TGA results show that the reduction rate is fastest in H₂ gas, and X-ray diffraction indicates that U₃O₈ reduces to UO_2+x without any intermediate phase. The reduced pellet, UO_2+x, has a special grain structure that consists of equiaxed grains at the surface, columnar grains in the middle, and equiaxed grains in the center. The equiaxed grains and columnar grains are much smaller in H₂ gas than in Ar or CO₂ gas. The reducing gases significantly influence the morphology of the grain structure. This difference can be explained in terms of a relation between oxygen potential and critical nucleus size during the reduction.     

A dilatometric study of the solubility of U4O9 in UO2

Phase relationships in the system UO₂-O₉ were studied using a dilatometei in which the O/U ratio of a UU_2+x specimen could be both controlled and measured. Phase boundary temperatures were indicated by changes in expansion or contraction rate during heating or cooling, respectively. The solubility of U₄O₉ in UO₂ agreed with the results of previous workers using other techniques. The dependence of solubility on temperature is complex, and appears to be influenced by a high-temperature phase transition in U₄0₉.     

Thermodynamic properties of the O-U system. II - Critical assessment of the stability and composition range of the oxides UO2+x, U4O9−y and U3O8−z

The published data concerned with the determination of the composition ranges of uranium oxides, UO_2+x, U₄O_9−y and U₃O_8−z, which have been determined using thermogravimetric, X-ray diffraction and electrochemical techniques are critically assessed. U₄O₉ and U₃O₈ have quite small domains of composition and the assessment of such data has carefully considered the uncertainties in the experimental determinations. In addition, the thermodynamic properties of U₄O₉ and U₃O₈, enthalpies of formation and transformation, entropies, and thermal capacities are analyzed and selected to build a primary data base for compounds.     

Formation of metastable conductive nanowire in a thiospinel compound CuIr2S4 induced by ion irradiation

We observed an increase in the conductivity of a thiospinel compound, CuIr₂S₄, induced by H⁺ and He⁺ irradiation with energies of 1-2 MeV. It was indicated that the metastable conductive phase was produced by electronic excitation due to the ion beam and this phase was similar to the X-ray-induced phase. Conductivity as a function of ion fluence was analyzed by a simple model where the ion-induced change occurred in a cylindrical region around an ion trajectory. The cross-sectional area of the cylinder was obtained by analyzing the conductivity as a function of ion fluence for each ion, and it was found that an impinging ion produced a nanowire in the conductive phase. In addition, the yield of the Ir dimer displacement, which was related to the increase in conductivity, was considerably high. The ion irradiation effect reported in this paper is unique with regard to the high yield and low linear energy transfer (LET) in the formation of the conductive-phase nanowire. Both these unique aspects could be ascribed to the low band-gap energy and strong electron-lattice interaction of this compound.     

Frenkel pair accumulation induced crystallization of amorphous MgAl2O4

The epitaxial and homogeneous irradiation induced re-crystallization of amorphous MgAl₂O₄ was studied by means of continuous Frenkel pair accumulation in the molecular dynamics framework. Present results point out that the re-crystallization induced by Frenkel pair accumulation appears in both cases to be thermally enhanced but non diffusive. It is governed by a local rearrangement of each point defect in the homogeneous case, while spontaneous Frenkel pair recombination process in the crystalline part or at the interface drives the re-crystallization in the epitaxial case.     

Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu₂O₃ on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu₂O₃ has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu₂O₃ films. The thicknesses of the Lu₂O₃ films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.     

Corrosion of UO2 and ThO2: A quantum-mechanical investigation

The addition of Th to U-based fuels increases resistance to corrosion due to differences in redox-chemistry and electronic properties between UO₂ and ThO₂. Quantum-mechanical techniques were used to calculate surface energy trends for ThO₂, resulting in (1 1 1) < (1 1 0) < (1 0 0). Adsorption energy trends were calculated for water and oxygen on the stable (1 1 1) surface of UO₂ and ThO₂, and the effect of model set-up on these trends was evaluated. Molecular water is more stable than dissociated water on both binary oxides. Oxidation rates for atomic oxygen interacting with defect-free UO₂(1 1 1) were calculated to be extremely slow if no water is present, but nearly instantaneous if water is present. The semi-conducting nature of UO₂ is found to enhance the adsorption of oxygen in the presence of water through changes in near-surface electronic structure; the same effect is not observed on the insulating surface of ThO₂.     

Phase diagram of the UO2-FeO1+x system

Phase-relation studies of the UO₂-FeO_1+x system in an inert atmosphere are presented. The eutectic point has been determined, which corresponds to a temperature of (1335 ± 5) °C and a UO₂ concentration of (4.0 ± 0.1) mol.%. The maximum solubility of FeO in UO₂ at the eutectic temperature has been estimated as (17.0 ± 1.0) mol.%. Liquidus temperatures for a wide concentration range have been determined and a phase diagram of the system has been constructed.     

Evaluation of melting point of UO2 by molecular dynamics simulation

The melting point of UO₂ has been evaluated by molecular dynamics simulation (MD) in terms of interatomic potential, pressure and Schottky defect concentration. The Born-Mayer-Huggins potentials with or without a Morse potential were explored in the present study. Two-phase simulation whose supercell at the initial state consisted of solid and liquid phases gave the melting point comparable to the experimental data using the potential proposed by Yakub. The heat of fusion was determined by the difference in enthalpy at the melting point. In addition, MD calculations showed that the melting point increased with pressure applied to the system. Thus, the Clausius-Clapeyron equation was verified. Furthermore, MD calculations clarified that an addition of Schottky defects, which generated the local disorder in the UO₂ crystal, lowered the melting point.     

Mössbauer study and structural characterization of UO2–Gd2O3 sintered compounds

Samples of UO₂and up to 10 wt% of Gd₂O₃ were prepared by solid-state reaction under a reducing atmosphere, in a thermal path comprising ramps and dwell times in the temperature range of 900–1750 °C. The sintered material was analyzed by X-ray diffraction and ¹⁵⁵Gd Mössbauer spectroscopy. The results showed that for samples annealed up to 900 °C, the gadolinium sesquioxide remained unreacted. However, when the temperature was increased to 1300 °C, a solid-state reaction took place forming mixed oxides. For the more severe sintering condition, at 1750 °C, gadolinia left urania partially unreacted producing a material consisting of two compositions, UO₂ (with no dissolved gadolinium) and (U, Gd)O₂. The proposed heating cycle provided pellets free from Gd₂O₃ phase and may be used by the nuclear fuel industry as a suitable sintering process.     

Temperature accelerated dynamics study of migration process of oxygen defects in UO2

We studied the migration dynamics of oxygen point defects in UO₂ which is the primary ceramic fuel for light-water reactors. Temperature accelerated dynamics simulations are performed for several initial conditions. Though the migration of the single interstitial is much slower than that of the vacancy, clustered interstitial shows faster migration than those. This observation gives us important insight on the formation mechanism of high-burnup restructuring, including planar defects and grain sub-division (the rim structure), found in UO₂.     

Micro-PIXE-RBS methods highlighting the influence of phosphorus on the in vitro bioactivity of sol-gel derived glass particles in the SiO2-CaO-P2O5 system

Ion beam analysis methods were used to characterize the interface of bioactive glasses with surrounding biological fluids. Glass particles in the SiO₂-CaO and SiO₂-CaO-P₂O₅ compositions were made by sol-gel processing and soaked in biological fluids for periods up to 4 days. The surface changes were characterized using PIXE-RBS, which are efficient methods for multielemental analysis and accurate trace elements quantification. Elemental maps of major and trace elements were obtained at a micrometer scale and revealed the bone bonding ability of the materials. Glass particles are quickly coated with a thin calcium phosphate-rich layer containing traces of magnesium. After a few days, SiO₂-CaO-P₂O₅ glass particles are entirely changed into calcium phosphates, whereas SiO₂-CaO particles exhibit a different behavior: the previously Ca-P enriched periphery has been dissolved and glass particles consist of a silicate network. Calculation of the Ca-P atomic ratios at the glass/biological fluids interface provides us with an explanation for this: an enduring apatitic phase seems to be formed at the periphery of SiO₂-CaO-P₂O₅ glass particles. Presence of phosphorus in the glass matrix thus has an influence on the amplitude and the kinetics of reaction of the bioactivity process. It might result in an improved chemical bond with living tissues.     

M2N nitride phases of 9% chromium steels for nuclear applications

M₂N nitride phases of 9% chromium steels with an extra-low carbon content have been investigated using a transmission electron microscope and an energy-dispersive X-ray (EDX) spectroscopy. The steel samples were normalized for 1 h at 1050 °C and then tempered at 600-780 °C for 30 min to 5 h followed by an air cooling. Through the analyses of the electron micro-diffraction patterns and EDX data for the precipitate particles on the extracted carbon replica, two types of Cr-rich M₂N nitride phases with the same hexagonal structure but totally different lattice parameters, a = 2.80 Å/c = 4.45 Å and a = 7.76 Å/c = 4.438 Å, were determined in the steels. Four types of Cr-rich M₂N phases with different lattice parameters probably existed in the steels. The M₂N phase revealed a decrease in its Cr content, an increase in its V content as the tempering temperature was increased, and no obvious change in its content for the metal fraction with an increasing tempering time.     

Theory of He trapping, diffusion, and clustering in UO2

We have performed ab initio total energy calculations to investigate the behavior of helium and its diffusion properties in uranium dioxide (UO₂). Our investigations are based on the density functional theory within the generalized gradient approximation (GGA). The trapping behavior of He in UO₂ has been modeled with a supercell containing 96-atoms as well as uranium and oxygen vacancy trapping sites. The calculated incorporation energies show that for He a uranium vacancy is more stable than an oxygen vacancy or an octahedral interstitial site (OIS). Interstitial site hopping is found to be the rate-determining mechanism of the He diffusion process and the corresponding migration energy is computed as 2.79 eV at 0 K (with the spin-orbit coupling (SOC) included), and as 2.09 eV by using the thermally expanded lattice parameter of UO₂ at 1200 K, which is relatively close to the experimental value of 2.0 eV. The lattice expansion coefficient of He-induced swelling of UO₂ is calculated as 9 × 10⁻². For two He atoms, we have found that they form a dumbbell configuration if they are close enough to each other, and that the lattice expansion induced by a dumbbell is larger than by two distant interstitial He atoms. The clustering tendency of He has been studied for small clusters of up to six He atoms. We find that He strongly tends to cluster in the vicinity of an OIS, and that the collective action of the He atoms is sufficient to spontaneously create additional point defects around the He cluster in the UO₂ lattice.     

Effect of CuO on CaTiO3 perovskite ceramics prepared using a direct sintering process

Effect of CuO on CaTiO₃ (CT) ceramics prepared using a direct sintering process (reaction-sintering process) was investigated. The mixture of raw materials was pressed and sintered into ceramics without any calcination stage involved. Pure CT could be obtained. The degree of densification in CT via reaction-sintering process is lower than traditional oxide route but the grains grew easier in CT via reaction-sintering process. A density 3.63 g/cm³ (90.3% of ρ_th) is obtained in CT pellets after 1500 °C/16 h sintering. With 3 wt.% CuO addition, density 3.92 g/cm³ (97.5% of ρ_th) is obtained after 8 h sintering at 1500 °C due to the liquid phase sintering. The liquid phase at grain boundaries appeared significantly at a lower sintering temperature for longer soak time.     

Structure and electrophysical properties of liquid Pb83Mg17 and Pb83Li17 eutectics

Short range order structure of Pb₈₃Mg₁₇ and Pb₈₃Li₁₇ liquid alloys has been studied by means of X-ray diffraction method. The structure factors and pair correlation functions are analyzed. Experimental structure data were used to calculate the partial structure characteristics by means of Reverse Monte Carlo method. It is shown also that Li₄Pb significantly affects the structure of Pb₈₃Li₁₇ eutectic melt. For Pb₈₃Mg₁₇ eutectic melt the electrical resistivity and thermo-e.m.f. were measured in the temperature range of 550-1300 K. Their analysis confirms the diffraction data concluding the heterocoordinated atomic distribution Pb and Mg atoms.     

Photoluminescence and XEL in Y2O3:Eu phosphor

Eu-activated Y₂O₃ phosphors were prepared by combustion synthesis and also by precipitation techniques. Photoluminescence and X-ray excited luminescence of prepared Y₂O₃:Eu phosphor, under two different techniques were compared and reported in this paper. Y₂O₃:Eu³⁺ phosphor were prepared by precipitation technique followed by annealing at 900 °C. It gives cubic nature of the particle that may be more favourable for high lumen output. X-ray excited luminescence of Y₂O₃:Eu³⁺ phosphors also reported in this paper.     

In-pile Xe diffusion coefficient in UO2 determined from the modeling of intragranular bubble growth and destruction under irradiation

Intragranular bubbles grow in the nuclear fuel by diffusion and precipitation of fission gases, mainly xenon; and are ultimately destroyed, under irradiation, by fission fragments. This article will attempt to determine the in-pile bubble distributions taking into account the evolution of the concentration profile around a bubble during its growth and the destruction process by fission fragments. From these distributions a relation between the bubble mean radius and the diffusion coefficient of xenon can be established, allowing the determination, from experimental measurements of intragranular bubble sizes, of the in-pile Xe diffusion coefficient in UO₂. The estimated activation energy (0.9 eV) is about one order of magnitude lower than the widely used value of 3.9 eV determined from out-of-pile experiments. This effect can be attributed to the presence of point defects created by the irradiation.     

Z2 structure and gas-solid effect in the stopping of slow ions

A recent claim by Paul of a systematic gas-solid difference in stopping cross sections for ions such as nitrogen and oxygen in the velocity range v ? v₀ is studied on the basis of existing experimental data. We find that all existing data support the commonly known Z₂ structure which, by and large, follows the valence structure of the target material. Existing experimental evidence is not found to support a specific gas-solid difference in the velocity range under consideration. The possibility of such an effect due to a gas-solid difference in charge state is rejected on theoretical grounds. Data for compound gases and solids are found to be well described by the Bragg additivity rule.We have also studied nitrogen/helium and oxygen/helium stopping ratios which determine the so-called effective-charge ratio. Taking into account the scatter of experimental data, we do not find clear evidence against Northcliffe’s assumption of a stopping ratio independent of Z₂ and common for gases and solids in the considered velocity range, although the absolute value appears too high.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.