直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明:较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.     

磁控溅射制备TiO2薄膜的抗凝血性能

用射频磁控溅射法在生物玻璃基片上沉积TiO2薄膜.通过研究基片温度和热处理对薄膜表面抗凝血性能的影响,比较了基片沉积薄膜前后抗凝血性能的变化,结果发现,在基片温度为500℃制得的TiO2薄膜的抗凝血性能较好,而导致薄膜表面抗凝血性能变化的主要原因在于薄膜表面能、表面结构和形貌的变化.     

直流反应磁控溅射制备锐钛矿型TiO2薄膜

采用直流反应磁控溅射的方法,在衬底温度为350℃的条件下溅射高纯钛靶,并在玻璃衬底上制备了TiO2薄膜。采用正交设计法探讨了溅射气压、溅射电流、氧氩比和溅射时间等实验条件对TiO2薄膜结构的影响。经过X射线衍射和拉曼光谱分析,制备结晶良好的锐钛矿结构TiO2薄膜的最佳实验条件为:溅射气压0.3Pa;溅射电流0.7A;氧氩比1∶3;溅射时间40min;退火温度650℃。     

射频磁控溅射制备TiO2-xNx薄膜及其光催化特性研究

利用射频磁控溅射在玻璃衬底上制备了透明TiO2 和 TiO2-x Nx 薄膜样品,通过 X 射线衍射(XRD)、原子力显微镜(AFM)及 UV Vis分光光度计等测试手段表征了样品的结构、形貌和光催化性能。结果表明制备的薄膜为锐钛矿相结构。随着 N2/Ar气流比的增大薄膜样品出现新的物相,吸收光谱向可见光方向展宽,在N2/Ar流量比为 3∶100 时,制备的薄膜在可见光区具有很好的光催化性能。     

退火温度对TiO2薄膜结构与光学性能的影响

研究退火温度对薄膜相结构、表面化学组成、形貌及光学性能的影响.采用射频磁控溅射法在单晶硅片和石英玻璃片上负载TiO2薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、X光电子能谱(XPS)和紫外可见光谱(UV-vis)对其进行表征.结果表明,常温制备400℃以下退火的TiO2薄膜为无定形结构,400℃以上退火的TiO2薄膜出现锐钛矿相,600℃以上退火的TiO2薄膜开始出现金红石相,退火温度在1000℃以上时样品已经完全转变为金红石相;高温退火薄膜的组成为TiOx;随着退火温度的升高,薄膜透射率下降,折射率和消光系数有所增加.     

磁控溅射制备TiO2薄膜的亲水性能研究

用射频磁控溅射法在玻璃基片上制备TiO2薄膜,并分别在300℃、400℃、500℃下进行热处理.用紫外吸收光谱、原子力显微镜(AFM)、接触角测定等分析方法研究了制备工艺、热处理和紫外光照射时间对薄膜表面亲水性的影响.结果表明,经紫外光照射或热处理后的TiO2薄膜表面表现出明显的超亲水性,而制备工艺的变化对亲水性的影响不明显.光谱、AFM分析表明,导致薄膜表面亲水性的原因在于薄膜表面微结构的变化.     

常温下纳米TiO2薄膜的制备及其超亲水性研究

在室温下采用溶胶法制备锐钛矿型纳米TiO2薄膜，研究不同温度处理后薄膜的超亲水性，光催化能力，结果表明：在室温下制备，固化的薄膜具有良好的超亲水性，光催化能力和较高的可见光透射率，且薄膜厚度均匀，温度低于200℃的热处理，对薄膜的光致特性基本没有影响，而在450℃下烘烤1h后，其光催化性能有所下降。     

总气压对直流反应磁控溅射制备TiO2薄膜的光学性质的影响

用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜，在固定电源功率、氩气流量42．6sccm、氧流量15sccm、溅射时间30min的条件下，通过控制总气压改变TiO22薄膜的光学性质。应用n＆k Analyzer 1200测量，当总气压增加时薄膜的平均反射率降低，同时反射低谷向短波方向移动，总气压对消光系数k影响不大；随着总气压的增加薄膜的折射率出现了下降的趋势，但当总气压达到一定量值时折射率的变化趋于稳定。通过XRD和SEM表征发现，随着总气压的增加TiO2的晶体结构由金红石相向锐钛矿相转变，薄膜表面的颗粒度大小由粗大变得微小细密。     

直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.     

金属Ag微网格修饰ITO薄膜的制备及光电性能

利用聚苯乙烯（PS）微球模板技术和直流磁控溅射技术在ITO（In2O3∶Sn）薄膜表面进行Ag的微网格修饰,得到具有良好周期性的表面结构。研究了PS微球直径和直流磁控溅射Ag时间对ITO薄膜表面形貌、可见光区透过率、漫反射率和导电性能的影响。实验及分析证明,对ITO表面进行Ag微网格修饰,当微球直径为2μm,溅射时间为30s时,最大可提高薄膜的导电性能19.5%,其漫反射性能可提高200%,同时在可见光区透过率的降低控制在10%以下,这将有助于提高ITO薄膜作为太阳能电池透明电极的陷光性能。     

离子束后处理对TiO2薄膜光学性质影响的实验研究

采用中频反应磁控溅射方法和线性阳极层离子源实现了TiO2薄膜在线制备和在线离子束后处理。通过对薄膜光学性质的研究,发现氧离子束后处理对提高薄膜折射率,降低薄膜吸收率具有明显效果。为工业生产中,薄膜的在线制备及后处理提供了切实可行的手段。     

溶胶-凝胶法制备TiO_2薄膜及其光学性能的研究

采用溶胶-凝胶法在K9玻璃上制备了均匀、透明、裂纹较少的纳米TiO2薄膜,以无水乙醇用量、涂层数、煅烧温度为影响因素,设计L9(3)4正交试验,以薄膜的透明度、微观致密程度作为评价标准,讨论了无水乙醇用量、涂层数和煅烧温度对制备TiO2薄膜光学性能的影响。用反射式椭圆偏振光谱仪测试最佳制备工艺下制得的TiO2薄膜的椭偏参数,并用Cauchy模型对椭偏参数进行数据拟合。结果表明,薄膜最优制备工艺参数为无水乙醇用量30 m L、涂层数为2层、煅烧温度为550℃;Cauchy模型能较好的描述溶胶-凝胶薄膜在300~700 nm波段的光学性能;薄膜的折射率和消光系数都有随波长增大而减小的趋势且制备的薄膜具有随着膜层数的增加,折射率增加,而最大峰值透光率、孔隙率减小的规律。     

Antimony-incorporated TiO2 thin films: preparation and optical and electrical characteristics

Antimony-incorporated TiO₂ thin films were prepared using the spray-pyrolysis technique. The optical characteristics (percentage transmittance, refractive index, extinction coefficient) and the film thickness were investigated. The resistivity of the prepared samples was measured, and the effect of Sb concentration and film thickness on the measured parameters was discussed. The effect of Sb on the band-gap was also studied.     

Effect of fluorine doping and SiO2 under-layer on the optical properties of TiO2 thin films

Fluorine-doped TiO₂ thin films were prepared via sol–gel method. Optical constants were obtained by fitting theoretical UV–Vis transmittance spectra to experimental ones within Forouhi–Bloomer dispersion model. The results show that doping with fluorine does not affect the absorption edge of TiO₂ films. The linear part of the absorption edge for the films on SiO₂/soda lime substrate is red shifted in comparison with that on bare soda lime and a broadened ‘tail’ up to ∼ 2.7 eV is observed. It is attributed to additional localized states within the TiO₂ band gap introduced by structural defects in titania lattice originated from TiO₂/SiO₂ interface.     

CoSnS2薄膜的制备及性能研究

采用两种方法制备了CoSnS2薄膜。在两步电沉积法中,先沉积SnS薄膜,再在其上制备CoS沉积薄膜,最后进行退火处理形成厚度约为1250nm的CoSnS2薄膜。在三元共沉积法中,加入EDTA(乙二胺四乙酸二钠)配合剂来调整Sn、Co、S的沉积电势以实现这三种元素的共沉积,从而一步形成厚约620nm的CoSnS2薄膜。探讨了薄膜的制备机理和制备条件对薄膜结构特性和光学特性的影响。得到的薄膜为多晶γ-Co6S2(立方晶系)和SnS(斜方晶系)结构,其直接光学带隙和间接光学带隙分别在1．05～1．25eV和0．11～0．71eV之间可调。     

Photoelectrochemical properties of plasma-deposited TiO2 thin films

Photoanodes were fabricated from TiO₂ films deposited onto titanium substrates by plasma-enhanced chemical vapor deposition. The photocurrent-wavelength and photocurrent-voltage properties of the anodes were determined and compared with those of thermally grown TiO₂ photoanodes. The plasma-deposited photoanodes displayed quantum efficiencies higher than those for the thermally grown films and comparable with those reported for single-crystal rutile. The microstructure of the plasma-deposited films appeared to be primarily responsible for the high quantum efficiencies.     

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO₂) thin films were deposited on glass and silicon (100) substrates by the sol–gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO₂ films was studied. TiO₂ films were used to fabricate metal–oxide–semiconductor capacitors. The capacitance–voltage (C–V), dissipation–voltage (D–V) and current–voltage (I–V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.     

Effect of annealing on microstructural and optoelectronic properties of nanocrystalline TiO2 thin films

In this study, semi-transparent nanostructured titanium oxide (TiO₂) thin films have been prepared by sol–gel technique. The titanium isopropoxide was used as a source of TiO₂ and methanol as a solvent and heat treated at 60°C. The as prepared powder was sintered at various temperatures in the range of 400–700°C and has been deposited onto a glass substrate using spin coating technique. The effect of annealing temperature on structural, morphological, electrical and optical properties was studied by using X-ray diffraction (XRD), high resolution transmittance electron microscopy (HRTEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), dc resistivity measurement and optical absorption studies. The XRD measurements confirmed that the films grown by this technique have good crystalline nature with tetragonal-mixed anatase and rutile phases and a homogeneous surface. The HRTEM image of TiO₂ thin film (annealed at 700°C) showed grains of about 50–60?nm in size with aggregation of 10–15?nm crystallites. Electron diffraction pattern shows that the TiO₂ films exhibited a tetragonal structure. SEM images showed that the nanoparticles are fine and varies with annealing temperature. The optical band gap energy decreases with increasing annealing temperature. This means that the optical quality of TiO₂ films is improved by annealing. The dc electrical conductivity lies in the range of 10^?6 to 10^?5?Ω?cm^?1 and it decreases by the order of 10 with increase in annealing temperature from 400°C to 700°C. It is observed that the sample Ti700°C has a smooth and flat texture suitable for different optoelectronic applications.