How Many Queries are Needed to Distinguish a Truncated Random Permutation from a Random Function?

An oracle chooses a function f from the set of n bits strings to itself, which is either a randomly chosen permutation or a randomly chosen function. When queried by an n-bit string w, the oracle computes f(w), truncates the m last bits, and returns only the first \(n-m\) bits of f(w). How many queries does a querying adversary need to submit in order to distinguish the truncated permutation from the (truncated) function? In Hall et al. (Building PRFs from PRPs, Springer, Berlin, 1998) showed an algorithm for determining (with high probability) whether or not f is a permutation, using \(O(2^{\frac{m+n}{2}})\) queries. They also showed that if \(m < n/7\), a smaller number of queries will not suffice. For \(m > n/7\), their method gives a weaker bound. In this note, we first show how a modification of the approximation method used by Hall et al. can solve the problem completely. It extends the result to practically any m, showing that \(\varOmega (2^{\frac{m+n}{2}})\) queries are needed to get a non-negligible distinguishing advantage. However, more surprisingly, a better bound for the distinguishing advantage, which we can write, in a simplified form, as \(O\left( \min \left\{ \frac{q^2}{2^n},\,\frac{q}{2^{\frac{n+m}{2}}},\,1\right\} \right) ,\) can be obtained from a result of Stam published, in a different context, already in 1978. We also show that, at least in some cases, this bound is tight.     

Impact of deployment size on the asymptotic capacity for wireless ad hoc networks under Gaussian channel model

We study the throughput capacity and transport capacity for both random and arbitrary wireless networks under Gaussian Channel model when all wireless nodes have the same constant transmission power P and the transmission rate is determined by Signal to Interference plus Noise Ratio (SINR). We consider networks with n wireless nodes \(\{v_1,v_2,\ldots,v_n\}\) (randomly or arbitrarily) distributed in a square region B _a with a side-length a. We randomly choose n _s node as the source nodes of n _s multicast sessions. For each source node v _i , we randomly select k points and the closest k nodes to these points as destination nodes of this multicast session. We derive achievable lower bounds and some upper bounds on both throughput capacity and transport capacity for both unicast sessions and multicast sessions. We found that the asymptotic capacity depends on the size a of the deployment region, and it often has three regimes.     

Link scheduling for throughput maximization in multihop wireless networks under physical interference

We consider the problem of link scheduling for throughput maximization in multihop wireless networks. Majority of previous methods are restricted to graph-based interference models. In this paper we study the link scheduling problem using a more realistic physical interference model. Through some key observations about this model, we develop efficient link scheduling algorithms by exploiting the intrinsic connections between the physical interference model and the graph-based interference model. For one variant of the problem where each node can dynamically adjust its transmission power, we design a scheduling method with O(g(E)) approximation to the optimal throughput capacity where g(E) denotes length diversity. For the other variant where each node has a fixed but possible different transmission powers for different nodes, we design a method with O(g(E))-approximation ratio when the transmission powers of all nodes are within a constant factor of each other, and in general with an approximation ratio of \(O(g(E)\log \rho )\) where \(\log \rho\) is power diversity. We further prove that our algorithm for fixed transmission power case retains O(g(E)) approximation for any length-monotone, sub-linear fixed power setting. Furthermore, all these approximation factors are independent of network size .     

Capacity of large hybrid erasure networks with random node distribution

The Gupta–Kumar’s nearest-neighbor multihop routing with/without infrastructure support achieves the optimal capacity scaling in a large erasure network in which n wireless nodes and m relay stations are regularly placed. In this paper, a capacity scaling law is completely characterized for an infrastructure-supported erasure network where n wireless nodes are randomly distributed, which is a more feasible scenario. We use two fundamental path-loss attenuation models (i.e., exponential and polynomial power-laws) to suitably model an erasure probability. To show our achievability result, the multihop routing via percolation highway is used and the corresponding lower bounds on the total capacity scaling are derived. Cut-set upper bounds on the capacity scaling are also derived. Our result indicates that, under the random erasure network model with infrastructure support, the achievable scheme based on the percolation highway routing is order-optimal within a polylogarithmic factor of n for all values of m.     

Improvement of RTS Noise in HgCdTe MWIR Detectors

Random telegraph signal (RTS) noise is present in all bands of the infrared spectrum from λ _c = 2.5 μm (short-wavelength infrared) to λ _c = 15.75 μm (very long-wavelength infrared) and decreases the performance of infrared photodetectors. The main features of RTS noise such as the jump amplitude and RTS frequency are defined, and their dependence as a function of focal-plane array (FPA) temperature was measured for all bands of the infrared spectrum. Both of these features comply with a Boltzmann activation law \( \left( { \propto {\hbox{e}}^{{\frac{{ - E_{\rm{a}} }}{k_{\rm B} T}}} } \right) \), and their activation energies scale with the bandgap. Comparison of three different HgCdTe mid-wavelength infrared photodetector technologies was also performed, showing that the optimized n-on-p improvement of operability (AOP) and p-on-n high-operating-temperature technologies show a reduced number of pixels exhibiting RTS noise (by about two decades) in comparison with standard n-on-p technology.     

HierHybNET: Cut-set upper bound of ad hoc networks with cost-effective infrastructure

This paper introduces an information-theoretic upper bound on the capacity scaling law for a hierarchical hybrid network (HierHybNET), consisting of both n wireless ad hoc nodes and m base stations (BSs) equipped with l multiple antennas per BS, where the communication takes place from wireless nodes to a remote central processor through BSs in a hierarchical way. We deal with a general scenario where m, l, and the backhaul link rate scale at arbitrary rates relative to n. Then, a generalized cut-set upper bound under the HierHybNET model is derived by cutting not only the wireless connections but also the wired connections. In addition, the corresponding infrastructure-limited regime is identified.     

Mixed RF/FSO bidirectional system achieving spectral efficiency

The performance of two-way relay (TWR)-assisted mixed radio-frequency/free-space optical (RF/FSO) system is evaluated in this letter. The proposed system employs decode-and-forward relaying phenomena where the relay is basically an interfacing node between two source nodes \(S_1\) and \(S_2\), where \(S_1\) supports RF signal, while \(S_2\) supports FSO signal. The TWR-assisted system helps in achieving spectral efficiency by managing bidirectional communication in three time slots, thus maximizing the achievable rate of the network. The RF link is subjected to generalized \(\eta -\mu \) distribution, and the optical channel is affected by path loss, pointing errors and gamma–gamma (gg) distributed atmospheric turbulence. The novel expressions for the probability density function and cumulative distribution function of the equivalent end-to-end signal-to-noise ratio (SNR) are derived. Capitalizing on these derived statistics of end-to-end SNR, the expressions of outage probability and the bit-error rate for different binary modulations and M-ary modulations are provided.     

Analog/RF Study of Self-aligned In<Subscript>0.53</Subscript>Ga<Subscript>0.47</Subscript>As MOSFET with Scaled Gate Length

This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In_0.53Ga_0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al₂O₃ oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (g _m/I _D) method is implemented to investigate analog parameters. Moreover, g _m and drain conductance (g _D) as key parameters in analog performance of the device are evaluated with g _m/I _D and gate length variation, where g _m and g _D are both showing enhancement due to scaling of the gate length. Early voltage (V _EA) and intrinsic voltage gain (A _V) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.     

Census: fast,scalable and robust data aggregation in MANETs

This paper describes Census, a protocol for data aggregation and statistical counting in MANETs. Census operates by circulating a set of tokens in the network using biased random walks such that each node is visited by at least one token. The protocol is structure-free so as to avoid high messaging overhead for maintaining structure in the presence of node mobility. It biases the random walks of tokens so as to achieve fast cover time; the bias involves short albeit multi-hop gradients that guide the tokens towards hitherto unvisited nodes. Census thus achieves a cover time of O(N) and message overhead of \(O(N\,log(N))\) where N is the number of nodes. Notably, it enjoys scalability and robustness, which we demonstrate via simulations in networks ranging from 100 to 4000 nodes under different network densities and mobility models. We also observe a speedup by a factor of k when k different tokens are used (\(1 \le k \le \sqrt{N}\)).     

The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal

Using the three-dimensional Monte Carlo model, the effect of monovacancies on the diffusion exchange between the steps on the (111) surface of a diamond-like crystal during sublimation was investigated. The critical terrace width L_cr (the distance from the step edge to the nearest stable vacancy islands) was determined as a function of the relationship between the energy of adatom formation at the smooth terrace E_n and the energy of adatom desorption from the terrace E_d with retention of the sum of these energies E_sub=E_n+E_d, which characterizes the sublimation of a substance. A well-pronounced maximum exists in the dependences L_cr(E_n) obtained. The formula is suggested which well describes the dependences L_cr(E_n) for various values of E_sub. The extrapolation of the dependence L_cr(E_n) to the value E_sub=4.2 eV, which is characteristic of Si, permits us to compare the model results with the experimental data of other authors. The explanation of a threefold increase in the terrace width, which is observed experimentally at about 1500 K, is suggested.     

Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography

The results devoted to the development of a method for creating an RF transistor, in which a T-shaped gate is formed by nanoimprint lithography, are presented. The characteristics of GaAs p-HEMT transistors have been studied. The developed transistor has a gate “foot” length of the order of 250 nm and a maximum transconductance of more than 350 mS/mm. The maximum frequency of current amplification f _t is 40 GHz at the drain-source voltage V _DS = 1.4 V and the maximum frequency of the power gain f _max is 50 GHz at V _DS = 3 V.     

Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power

The temperature dependences of the conductivity and thermoelectric power for a series of samples W_1–x Nb _x S₂, W_1–x Nb _x Se₂, WS_2–y Se _y , W_1–x Nb _x S_2–y Se _y are studied at low temperatures. It is found that the cation substitution of W atoms with Nb leads to an increase in the conductivity and a decrease in the thermoelectric power. The anion substitution of S with Se atoms results in a simultaneous increase in the conductivity and thermoelectric power. The highest power factor among the samples studied is inherent to W_0.8Nb_0.2Se₂.     

The detection limit of curved InGaAs/AlGaAs/GaAs hall bars

The work is devoted to the study of noise characteristics of curved Hall bars based on InGaAs/AlGaAs/GaAs semiconductor heterostructures. The noise spectral density S_N(f) was investigated experimentally and the magnetic field detection limit B_N of a flat and similar Hall bar rolled in a tube was defined. The low-frequency spectra of 1/f noise were studied and the dimensionless Hooge noise parameter α_H was determined. The ability to use the curved Hall bars in the devices for measuring weak magnetic fields (<1 μT) was predicted.     

On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4<Emphasis Type="Italic">H</Emphasis>–SiC

All published results of measurements (at 300 K) of the impact ionization coefficients for electrons α_n and holes α_p in 4H–SiC are analyzed. It is shown that the most plausible approximations of dependences of α_{n, p} on electric-field strength E have the usual form α_{n, p} = a_{n, p} exp(–E_{n, p}/E) at fitting-parameter values of a_n = 38.6 × 106 cm^–1, E_n = 25.6 MV/cm, a_p = 5.31 × 106 cm^–1, and E_p = 13.1 MV/cm. These dependences α_{n, p}(E) are used to calculate the highest field strength E_b and thickness w_b of the space-charge region at the breakdown voltage U_b. A number of new formulas for calculating α_{n, p}(E) are obtained from the results of measuring the avalanche-multiplication coefficients and the excess-noise factors under the single-sided illumination of photodiodes with stepped doping.     

Determination of the fractal dimension for the epitaxial <Emphasis Type="Italic">n</Emphasis>-GaAs surface in the local limit

Atomic-force microscopy studies of epitaxial n-GaAs surfaces prepared to deposit barrier contacts showed that major relief for such surfaces is characterized by a roughness within 3–15 nm, although “surges” up to 30–70 nm are observed. Using three independent methods for determining the spatial dimension of the surface, based on the fractal analysis for the surface (triangulation method), its section contours in the horizontal plane, and the vertical section (surface profile), it was shown that the active surface for epitaxial n-GaAs obeys all main features of behavior for fractal Brownian surfaces and, in the local approximation, can be characterized by the fractal dimension D _f slightly differing for various measuring scales. The most accurate triangulation method showed that the fractal dimensions for the studied surface of epitaxial n-GaAs for measurement scales from 0.692 to 0.0186 μm are in the range D _f = 2.490?2.664. The real surface area S _real for n-GaAs epitaxial layers was estimated using a graphical method in the approximation δ → 0 δ is the measurement scale parameter). It was shown that the real surface area for epitaxial n-GaAs can significantly (ten times and more) exceed the area of the visible contact window.     

Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range

Photodiode heterostructures n-GaSb/n-GaInAsSb/p-AlGaAsSb with a red cutoff at 4.8 μm are studied. It is shown that making higher the content of In and Al in the narrow-gap and wide-gap layers, respectively, improves the photoelectric parameters of a structure via elimination of the tunnel leakage across the n-GaInAsSb/p-AlGaAsSb junction. A detectivity D _λ ^* = 1.1 × 10⁹ cm Hz^1/2 W^?1 at room temperature was obtained.     

Relaxation of excited donor states in silicon with emission of intervalley phonons

The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley phonons is analyzed. The rate of transitions from the 2p ₀ state to the group of 1s(E, T ₂) states with emission of the intervalley acoustic phonons LA-g and TA-f is calculated for the phosphorus, antimony, arsenic, and bismuth donors. It is shown that the TA-f phonons make a substantial contribution to nonradiative decay of the 2p ₀ state that controls the stimulated infrared emission of the phosphorus and antimony donors in silicon.     

Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the <Emphasis Type="Italic">I–V</Emphasis> Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC)_1–x(AlN) _x and those of heterojunctions based on SiC and its solid solutions taking into account Φ_g ≈ Φ_B. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n-M/p-(SiC)_1–x(AlN) _x and n-6H-SiC/p-(SiC)_0.85(AlN)_0.15 systems.     

Efficient Multicast Association to Improve the Throughput in IEEE 802.11 WLAN

This paper deals with the problem of optimal association of stations (S T A s) to access points (A P s) for mulicast services in IEEE 802.11 WLAN. In a multicast session, all the subscribed S T A s receive the multicast data packet at the same data rate (R _{m i n} ) from their respective serving A P s. A higher value of R _{m i n} improves the multicast throughput by completing the ongoing multicast session in lesser time. This also improves the unicast throughput as the cycle duration is shared by the unicast and multicast sessions. To provide multicast services to the S T A s, we need to select a minimum cardinality subset of A P s as the system message overhead depends on this cardinality. However, such a minimum cardinality subset of A P s may not be possible to activate simultaneously due to the limited number of available orthogonal frequency channels. In this paper, we develop a combined greedy algorithm that selects a subset of A P s with minimum cardinality for which a conflict-free frequency assignment exists and finds an association between the S T A s and the selected A P s that maximizes the R _{m i n} value. Through simulation we have shown that the proposed algorithm selects significantly less number of A P s for different R _{m i n} values in comparison to the well-known metrics for multicast association like RSSI, minimum hop-distance, normalized-cost and in-range STA number.     

Surface roughness and magnetic properties of Co/SiO<Subscript>2</Subscript>/Si(100) polycrystalline films deposited via DC magnetron sputtering

For polycrystalline films of cobalt that have the thickness t ≈ 1.3–133 nm and that are deposited via DC magnetron sputtering on SiO₂(0.1 μm)/Si(100) substrates, surface-roughness root-mean-square amplitude σ and surface correlation length ξ, which characterize the roughness of film surfaces, as well as saturation magnetization 4πM ₀, width of ferromagnetic-resonance line ΔH, coercitivity H _C, and saturation fields H _S, are studied as functions of film thickness t. It is shown that the behavior of dependences H _C(t) and H _S(t) coincides with the behavior of dependence σ(t)/t, whereas the behavior of 4πM ₀(t) depends on ratio t/σ(t). The dependence of the FMR line width on the film thickness, ΔH(t), is characterized by a minimum of ΔH ≈ 60 Oe present in the region of thicknesses of 30 to 60 nm. The behavior of dependence ΔH(t) is determined by ratio σ(t)/t at small thicknesses t ≤ 5 nm and by the behavior of σ(t) at t ≥ 5 nm.