CIGS薄膜太阳电池研究进展

Cu(In,Ga)Se2(CIGS)薄膜太阳电池以其具有的诸多优势成为最具发展潜力的太阳电池之一。随着CIGS薄膜太阳电池光电转换效率世界纪录的不断被刷新,继续提高电池性能、研究无Cd缓冲层材料,发展柔性衬底CIGS薄膜电池及组件,优化现有的工艺流程,开发低成本的吸收层沉积工艺,尽快将实验室技术转移为CIGS电池组件的商业化生产成为今后的研究热点。主要介绍了CIGS薄膜太阳电池近年来在这些方面的研究进展。     

铜铟镓硒薄膜太阳电池的应力问题

分析了CIGS太阳电池的总应力来自于单层膜中的沉积应力及膜层界面间的相互作用.计算得出Mo薄膜与CIGS薄膜界面晶格失配度最大,表明相对于其他界面,该界面的应力值较大.而作为缓冲层的CdS薄膜有效地改善了吸收层CIGS薄膜与窗口层ZnO薄膜的界面应力.而对于柔性衬底材料的PI薄膜,如何解决因其较大的热膨胀系数造成的热应...     

蒸发法制备CIGS薄膜太阳电池的研究进展

多元共蒸发技术制备的Cu(In,Ga)Se2(CIGS)薄膜具有结晶质量高,梯度带隙,成分易于精确控制等优点,被认为是制备高效率CIGS薄膜太阳电池的最佳工艺。目前,该工艺制备的CIGS电池的实验室转换效率已经超过20%,通过改进和优化共蒸发工艺流程,继续提高电池性能、发展柔性衬底薄膜电池、尽快将实验室技术转移为CIGS电池组件的商业化生产成为新的研究热点。主要介绍了共蒸发工艺的特点,以及近年来在制备CIGS薄膜太阳电池及组件方面的研究进展。     

硅薄膜太阳电池技术及其应用

太阳能光伏发电是清洁能源领域的热点,继晶体硅太阳电池技术与产业在20世纪末、21世纪初得到飞速发展之后,以硅薄膜太阳电池技术的快步升级及大规模产业化为特征的新一轮光伏能源技术发展高潮正在到来。文章对硅薄膜太阳电池的技术特点、应用优势、基础研究、产业化现状及发展趋势等方面作了简要介绍。     

ZAO特性及其在CIGS电池中的应用

透明导电氧化物薄膜(Transparent Conductive Oxides,简称TCO)用途广泛,介绍了TCO应用于光伏领域中的铜铟镓硒薄膜(CIGS)太阳电池,是CIGS太阳电池中不可缺少的一部分。简要阐述了其可见光范围内的透明性和导电性及其成因,以及作为CIGS薄膜太阳电池中窗口层的作用。将ITO和ZAO透明导电薄膜在CIGS太阳电池的应用进行相比,以掺铝的氧化锌(ZnO∶Al简称ZAO)透明导电薄膜为例,对其性能、制备方法及过程进行了简要阐述,并概括了大面积ZAO薄膜的性能。     

CIGS薄膜太阳能电池之单靶溅镀制程及应用

运用溶剂浴热法合成四元化合物Cu（InGa）Se2粉末,利用XRD、SEM、XRF及UV—Vis测定其晶相结构、形貌、成分比例及能隙后,压制成靶材,以单源靶溅镀方式溅镀薄膜,采用in—linesputter技术制造出薄膜太阳能电池模块,其转换效率达10％。单靶溅镀制程实现自动化、制程简单,设备维护成本低。     

薄膜太阳电池技术进展及市场前景

美国投资机构Maxim Group最新统计数据显示,受美国、欧洲双反调查的影响,中国最大的10家光伏企业的债务累计已高达175亿美元,约合1 110亿元人民币。但是,业内人士认为,所有中国光伏产业的负面消息,说的都是晶硅太阳电池,而不是薄膜太阳电池,薄膜太阳电池正在以每年5%～10%的市场占有率快速增长。     

美国XsunX公司的铜铟镓硒CIGS太阳电池

XsunX公司是美国加州一家CIGSolar开发商。CIGSolar是一种混合薄膜太阳电池的制造技术。该公司通过CIGSolar技术制成的铜铟镓硒CIGS光伏电池片经美国国家可再生能源实验室NREL鉴定,其峰值转换效率达到16.36%。     

铜铟镓硒柔性薄膜太阳电池的制备及性能表征

以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。     

高效钙钛矿薄膜太阳电池柔性组件及封装技术方法

本研究提供了一种高效钙钛矿薄膜太阳能电池柔性组件的封装方法,电池模块包括一个基座,基座上以矩阵形式排列着多个串联和平行的钙钛矿太阳能电池组件,其中每个钙钛矿太阳能电池组件被一个完全透明的底板包围在密封的钙钛矿薄膜中,该底板与高效钙钛矿薄膜太阳能电池的柔性组件是一个密封系统。每个钙钛矿太阳能电池组件被封闭在由底部底板、全透明底板和密封材料围成的密封空间内,其正负级耦合终端使得各个电池组件都是密封的。该封装方法解决了单个钛酸钙电池模块在使用过程中被损坏不易更换的问题,并且具有更好的封装效果。     

基于CIGS薄膜太阳电池组件内级联工艺研究

采用532 nm激光一次完成P1、P2和P3三道划线,实现了柔性铜铟镓硒(CIGS)薄膜太阳电池组件的内级联。通过设计了P1、P2无缝连接结构,选择合适的绝缘、导电浆料,优化级联划线工艺,使单节子电池的死区总宽度减小到约450μm,并对激光划线的可靠性进行了评估。     

柔性薄膜太阳电池温度系数初探

影响电池功率输出的因素有很多,例如温度,由于工作环境的温度不同,其电压、电流、功率也不同,电池在极端温度下工作状态能否达到要求,需要在电路设计时进行预算,因此温度系数这一电池特性就显得尤为重要。通过一组实验,在不同的温度下对柔性薄膜太阳电池进行电性能测试,得到样品电池在不同温度下的I-V曲线以及各项参数。结果表明,电池随着温度的升高,开路电压降低,短路电流升高,最大功率降低。     

铜铟镓硒薄膜太阳电池辐照效应研究

高性能、高可靠性、质量轻、抗辐照能力强、低成本是未来空间用太阳电池技术的主要发展方向。铜铟镓硒薄膜太阳电池最高转换效率已突破21%,并具有轻质、抗辐照能力强等特点,是最具有空间应用前景的新一代太阳电池。总结了国内外铜铟镓硒薄膜太阳电池辐照效应的研究状况,阐述了铜铟镓硒薄膜太阳电池辐照效应研究差异的主要原因,指出了未来铜铟镓硒薄膜太阳电池辐照效应的研究方向。     

薄膜太阳电池的发展值得重视

根据当前光伏市场的迅速发展,要求人们寻找一种高效率低成本的适合规模化生产的太阳电池。作者认为,薄膜太阳电池具有优良的特性,是一种很有发展前途的低成本太阳电池。美、日、欧正在迅速成功地开展薄膜太阳电池的研究与开发,而中国在该项技术上还处于实验室研究阶段,应加快向企业化过渡。     

Improvement of heating characteristics of molybdenum silicide thin film electric heaters

Molybdenum silicide (MoSi₂) has an electrical conductivity as high as that of a metal, and greater chemical stability than that of, for example, SiC, in various atmospheres. Therefore, many kinds of MoSi₂ bulk‐type heaters are used in practical operations up to 1800^°C, which is higher than the temperature of SiC heaters. However, MoSi₂ is fragile at room temperature and has low creep resistance at high temperature. The purpose of this study is to fabricate heaters using thin films of MoSi₂ deposited on alumina substrates and crucibles by RF magnetron sputtering and to evaluate their characteristics. MoSi₂ thin film was deposited on the outside of an alumina crucible without heating the substrate and then Pt wire was attached using a Pt paste with sintering in a vacuum. This MoSi₂ thin film heater showed almost linear resistance–temperature (R–T) characteristics and a uniform heating state. It also showed good controllability of voltage and stability in the power–T characteristics for operations up to 1000^°C. However, at a heating temperature of 1300^°C, the heating area of MoSi₂ thin film decreased because of the reaction between Pt and MoSi₂ in the case of long‐term heating. Thus, Mo thin film was deposited as a buffer layer between Pt and MoSi₂ thin film to prevent such a reaction. This thin film heater showed good linear R–T characteristics up to 1200^°C. However, the temperature coefficient of resistance changed with repeated heating operation as a result of the diffusion of Mo atoms into MoSi₂. Thus, a thin film heater was fabricated with Mo₃Si, having a higher Mo content than MoSi₂. This heater showed a low degree of diffusion of Mo or Pt atoms into the thin film and had excellent practical characteristics up to 1000^°C. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 168(2): 11–19, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20806     

Solution chemistry effects in Pb(Zr,Ti)O3 thin film processing

Ferroelectric thin films in the PZT compositional family were prepared by two different solution deposition methodologies. The approaches were based on the use of carboxylate and alkoxide precursors, and acetic acid. Solution aging and mixing order effects on thin film microstructure and ferroelectric properties were studied. Films prepared from 15 day old solutions had a lower remanent polarization (1.4 μC/cm2) and higher coercive field (256 kV/cm) than films prepared from 1 day old solutions (Pr = 18.7 μC/cm2; Ec = 55.2 kV/cm). Raman, FTIR, and NMR spectroscopies were employed to confirm the role of acetic acid in the process, and to begin to understand why changes in solution chemistry can so dramatically affect the resulting film microstructure and properties. FTIR spectroscopy indicated that in addition to acting as a solvent, acetic acid also serves as a chemical modifier in the two processes. That is, it reacts with the alkoxide precursors on a molecular level, replacing the alkoxy ligands. Ester formation was also observed by both FTIR and NMR spectroscopy. The formation of this by-product implies the simultaneous formation of water, and therefore, in-situ hydrolysis and condensation of the precursors.     

Chemical solution processing of sr2(nb,ta)2o7 thin films

Abstract

Sr₂(Nb,Ta)₂O₇ thin films have been synthesized by chemical solution deposition. Homogeneous and stable Sr₂(Nb,Ta)₂O₇ precursor solutions with various Nb/Ta ratios were prepared by controlling the reaction of metal alkoxides in ethanol with a key additive of 2-ethoxyethanol. The crystallization temperature of the perovskite-type Sr₂(Nb,Ta)₂O₇ slabs structure decreased with increasing Nb substitution in amount. The crystallization temperature of Sr₂(Nb_0.2Ta_0.8)₂O₇ films on Pt/Ti/SiO₂/Si and Pt/Ir/Ti/SiO₂/Si substrates was above 800°C. On the other hand, by using Pt(100)/MgO(100) as a substrate, Sr₂(Nb,Ta)₂O₇ thin films crystallized into the Sr₂(Nb,Ta)₂O₇ phase at 700°C.     

用漆包线介质损耗指标分析判断指南的标准化探讨

简要介绍了介电分析技术的理论基础,综合描述了介电分析技术的应用方向。总结不同温度等级的漆包线介质损耗试验结果,提出了今后相关行业在漆包线介质损耗指标试验结果判断标准的制定工作中应努力的方向。     

发电厂冷渣器冷却水回水接入点改造及经济性分析

北方联合电力有限责任公司蒙西发电厂2号300 MW循环流化床机组存在低压加热器凝结水温升过高、冷渣器循环效率低及凝结水流量过大等问题,主要原因是冷渣器回水接入点不合理。通过方案论证,对冷渣器冷却水回水接入点进行改造。改造后,低压加热器凝结水温升趋于设计值;汽轮机回热得到合理利用,汽轮机热耗由8680.97 kJ/kWh降至8382.5 kJ/kWh;供电煤耗由363 g/kWh降至359.8 g/kWh,提高了机组运行的经济性。同时通过凝结水泵电机变频改造等措施,解决了凝结水流量过大的问题。