微电子芯片热电冷却系统的传热特性

针对微电子芯片热管理技术的现状和传统冷却技术的不足,建立微电子芯片热电冷却装置及其性能测试系统,采用热阻分析模型对传热过程进行研究.结果表明:在热电冷却过程中,帕尔帖效应占主导作用,TEC(热电冷却系统)自身热阻θ2随工作电流I的增大而降低.当芯片功率为20 W时,芯片与TEC冷面的界面热阻θ1在I为2.1 A时取得最...     

Image analysis for microelectronic retinal prosthesis

By way of extracellular, stimulating electrodes, a microelectronic retinal prosthesis aims to render discrete, luminous spots-so-called phosphenes-in the visual field, thereby providing a phosphene image (PI) as a rudimentary remediation of profound blindness. As part thereof, a digital camera, or some other photosensitive array, captures frames, frames are analyzed, and phosphenes are actuated accordingly by way of modulated charge injections. Here, we present a method that allows the assessment of image analysis schemes for integration with a prosthetic device, that is, the means of converting the captured image (high resolution) to modulated charge injections (low resolution). We use the mutual-information function to quantify the amount of information conveyed to the PI observer (device implantee), while accounting for the statistics of visual stimuli. We demonstrate an effective scheme involving overlapping, Gaussian kernels, and discuss extensions of the method to account for shortterm visual memory in observers, and their perceptual errors of omission and commission.     

一种用于中枢神经信号再生的四通道微电子系统

This paper presents a microelectronic system which is capable of making a signal record and functional electric stimulation of an injured spinal cord. As a requirement of implantable engineering for the regeneration microelectronic system, the system is of low noise, low power, small size and high performance. A front-end circuit and two high performance OPAs （operational amplifiers） have been designed for the system with different functions, and the two OPAs are a low-noise low-power two-stage OPA and a constant-gm RTR input and output OPA. The system has been realized in CSMC 0.5-μm CMOS technology. The test results show that the system satisfies the demands of neuron signal regeneration.     

真空微电子加速度传感器结构的有限元分析

论述了真空微电子加速度传感器的结构及工作原理 ,应用有限元方法对加速度传感器进行了静力学和动力学分析 ,拟合出悬臂梁的长宽厚与质量块最大位移量的关系曲线和谐振频率的关系曲线以及质量块受迫振动的谐响应曲线。这些分析为此类加速度传感器的设计提供了理论依据     

A four-channel microelectronic system for neural signal regeneration

This paper presents a microelectronic system which is capable of making a signal record and functional electric stimulation of an injured spinal cord. As a requirement of implantable engineering for the regeneration microelectronic system, the system is of low noise, low power, small size and high performance. A front-end circuit and two high performance OPAs (operational amplifiers) have been designed for the system with different functions,and the two OPAs are a low-noise low-power two-stage OPA and a constant-g_m RTR input and output OPA. The system has been realized in CSMC 0.5-μm CMOS technology. The test results show that the system satisfies the demands of neuron signal regeneration.     

真空微电子加速度传感器结构的有限元分析

论述了真空微电子加速度传感器的结构及工作原理,应用有限元方法对加速度传感器进行了静力学和动力学分析,拟合出悬臂梁的长宽厚与质量块最大位移量的关系曲线和谐振频率的关系曲线以及质量块受迫振动的谐响应曲线。这些分析为此类加速度传感器的设计提供了理论依据。     

Computer-controlled scanning electron microscope system for high-resolution microelectronic pattern fabrication

A small, dedicated computer has been interfaced to a scanning electron microscope (SEM) for the purpose of generating, registering, and fabricating microelectronic device and circuit patterns with submicron dimensions. A preliminary registration accuracy of ±0.1 µm over a (950-µm)²pattern field has been demonstrated.     

Minority-carrier lifetime analysis of silicon epitaxy and bulkcrystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. The authors present an analysis of MOS capacitance-versus-time data that enables minority-carrier generation lifetime to be plotted as function of depletion-region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si (2%Ge) epitaxial layers with misfit dislocations. For samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime is reduced by more than an order of magnitude     

An unbiased parametric imaging algorithm for nonuniformly sampled biomedical system parameter estimation

An unbiased algorithm of generalized linear least squares (GLLS) for parameter estimation of nonuniformly sampled biomedical systems is proposed. The basic theory and detailed derivation of the algorithm are given. This algorithm removes the initial values required and computational burden of nonlinear least regression and achieves a comparable estimation quality in terms of the estimates' bias and standard deviation. Therefore, this algorithm is particular useful in image-wide (pixel-by-pixel based) parameter estimation, e.g., to generate parametric images from tracer dynamic studies with positron emission tomography. An example is presented to demonstrate the performance of this new technique. This algorithm is also generally applicable to other continuous system parameter estimation.     

Calculation and analysis of thermal impedance of microelectronic structures from analytical models

This article deals with thermal impedances of microelectronic components that are useful in Simulation Programs with Integrated Circuit Emphasis (SPICE). In devices like heterojunction bipolar transistors, the active regions thicknesses are often much smaller than the substrates thicknesses. The devices can then be thermally assimilated to heat densities located on top of solid media. In addition to that, when the other dimensions of the heat sources are also much smaller than the substrates dimensions, it is reasonable to consider that the substrate is semi-infinite. First, the expression of the thermal impedance Z of a circular shape heat source centered on top of a half space is presented. For this purpose, the integral transform technique has been used to solve the tri-dimensional heat conduction equation in the frequency domain. The original expression is explicit, exact and allows obtaining results very quickly. After that, the case of a circular heat source on top of a cylinder is treated. A complete analysis of the substrate dimensions influence on the thermal impedance is done. It is based on the impedance decomposition into the one-dimensional impedance and the spreading impedance. By comparing these impedances with that obtained for the heat source on top of the semi-infinite medium, the threshold pulsation at which the thermal impedance of the finite medium differs from the thermal impedance of the half space is extracted. Moreover the geometrical criteria resulting in an error of less than 2% between the spreading impedance of the finite medium and the semi-infinite one are extracted. When these criteria are observed the impedance can be calculated using two perfectly known impedances: the spreading impedance of the semi-infinite medium and the one-dimensional impedance. The results are plotted on the Nyquist diagram, providing a compact representation. Finally the assumption of a circular shape heat source to approximate the thermal impedance of a square shape heat source is validated by evaluating the associated error. The calculation times have been compared to confirm the interest of using this hypothesis.     

用于微电子制造的高速高精度运动系统关键技术

从机构设计、驱动方式、控制策略以及实时监测等方面对用于微电子制造的高速精度运动系统关键技术进行综述，提出有待深入研究的方向：1）并联机构在系统中的应用；2）解决柔性结构振动问题的控制策略；3）用于实时动态全闭控制模式的视觉伺服技术。     

微电子器件的抗辐射加固技术

对各类微电子材料的抗辐射特性进行了分析 ,对 Si双极器件和 Si CMOS器件、 Ga As微波功率器件、新兴光电器件—— VCSEL、 LED以及 MEMS的抗辐射加固技术进行了探讨 ,对几种空间单粒子效应 (SEE)进行了研究     

先进的MCM微电子组装技术

电子技术发展至今，限制电子器件性能提高的关键因素已不是芯片本身的制作，而是互连，封装技术。一种先进的互连，封装技术－多芯片组件已崭露头角。文章简要叙述了ＭＣＭ的历史背景，应用前景和市场预测，重点介绍了ＭＣＭ的种类，结构及其设计，制作和测试技术。     

Thermomechanical failures in microelectronic interconnects

Thermomechanical fatigue failures are an important class of failures in microelectronic interconnect structures. Thermomechanical stresses arise from differences in the coefficients of thermal expansion of the various materials comprising a microelectronics circuit. Polymer dielectrics and adhesives have larger coefficients of expansion than metal conductors. Dielectrics and adhesives may also exhibit large anisotropy in the coefficient of expansion, producing significant thermomechanical stresses in vias or other metal interconnect structures. During ambient thermal cycling or operational power dissipation, cyclic stresses are induced, which cause fatigue failures. The basic elements of thermomechanical fatigue behavior of microelectronic interconnect structures, such as lines and vias, are presented in this paper. In addition, a case study illustrating many of the concepts is presented for a complex 3-D interconnect.     

Admittance analysis of nonuniformly spaced phased arrays of waveguide apertures in a ground plane

A general formulation for the analysis of a phased array of waveguide apertures in a common ground plane has been given for finite number of elements and nonuniform spacings based on network representation of the system. The analysis yields the radiation pattern, reflection coefficient, and aperture field in each waveguide. The pattern of an array of physically identical elements is expressed as superposition of patterns of infinite number of arrays. The formulation, when applied to single and two aperture cases, confirms the known results. It is then applied to investigate the properties of the element position modulated phased array of 15 rectangular waveguide apertures excited by uniform incident waves. Uniformly spaced arrays are also analyzed for comparison. The dominant mode and one higher order evanescent mode are included in the computations. The results show that the overall power reflection coefficient of the nonuniform array does not undergo any peaks over a wide scan range. It is concluded that the advantages of nonuniformly spaced arrays in suppressing grating lobes and eliminating blind spots are physically realizable.     

纳米技术在微电子连接上的应用

纳米技术（nanotechnology）是一门在0.1～100nm空间尺度内操纵原子和分子,对材料进行加工，制造具有特定功能的产品,或对某物质进行研究,掌握其原子和分子的运动规律和特性的崭新高技术。本文示举两例，介绍纳米技术在微电子连接方面的应用。     

Reliability considerations of III-nitride microelectronic devices

The success of III-nitride optoelectronic devices paths the way towards emerging devices in microelectronics. These devices are currently at the threshold to commercialization, therefore reliability considerations are becoming increasingly important. This paper reviews the material and process technology of III-nitride microelectronic devices in the scope of reliability. Since statistical reliability data are lacking in the current state of research the review starts with a summary of how reliability can be designed into process modules being relevant for microelectronic devices. This includes a discussion of the most important issues of material growth, metallization, implantation, dry etching and surface passivation. The subsequent chapter focuses to microelectronic devices and highlights technological challenges that have to be met in order to obtain reliable devices. Finally, results of lifetime experiments (thermal aging) demonstrate that III-nitride devices have the potential for reliable operation even at elevated temperatures up to 400°C.