Ultra-High-Speed GaAs Monolithic Prescaler and Phase Frequency Comparator IC

A high-speed, low-power prescaler and phase frequency comparator (PFC) IC for a phase-lock stable oscillator was designed and fabricated on a single chip using GaAs MESFET BFL circuitry. The gate width of the master-slave T-type flip-flops used in designing the 1/32 frequency divider prescaler was determined by circuit simulations. The fabricated 1/32 prescaler operated up to 8.0 GHz while the fabricated monolithic prescaler and PFC IC performed stable division, and phase and frequency comparison at input frequencies up to 4.8 GHz with a chip power dissipation of only 715 mW.     

An Ultra-High-Speed GaAs Prescaler Using a Dynamic Frequency Divider

A high-speed, low-power-consumption prescaler for a phase lock stable oscillator is designed and fabricated with a GaAs MESFET BFL circuit. The prescaler of a 1/32 frequency divider is composed of a dynamic frequency divider for the prescaler first stage, a newly developed dual-phase signal generator, and master-slave T-type flip-flops for the presealer post stages. The fabricated 1/32 prescaler operated up to 8.5 GHz at only 540 mW. The 1/2 dynamic frequency divider corresponding to the prescaler first stage shows a maximum operation frequency of 13.2 GHz at only 115 mW.     

GaAs Ultra-High-Speed Prescaler/Phase Frequency Comparator Using LSCFL (Short Paper)

A high-speed, low-power prescaler/phase frequency comparator (PFC) medium scale integration (MSI) circuit for a phase-locked stable oscillator is designed and fabricated using GaAs MESFET low-power source-coupled FET logic (LSCFL) circuitry. The construction of the 1/64 frequency divider prescaler/PFC is designed to obtain high-speed and low-power operation. The fabrication process used is buried p-layer SAINT with a 0.5-µm gate length. The fabricated prescaler/PFC MSI circuit, mounted on a newly developed high-frequency package, operates up to 7.6 GHz with a power dissipation of 730 mW.     

A 80-gbit/s D-type flip-flop circuit using InP HEMT technology

80-Gbit/s operation of a static D-type flip-flop (D-FF) circuit was achieved using InP-based HEMT technology, which has a cut-off frequency of 245 GHz and a transconductance of 1500 mS/mm. The circuit was designed with differential operation based on source-coupled FET logic (SCFL). To overcome deterioration of the 80-GHz clock signals in a single-ended to differential signal converter in the input buffer, a rat-race circuit was used as a converter. Measurements showed that the circuit achieved a gain of over 2 dB higher than a conventional converter using a differential pair circuit, and power consumption was reduced from 380 to 260 mW. The power supply voltage was -5.7 V, and total power consumption was 1.2 W. Since there is no commercially available 80-Gbit/s-pulse pattern generator, we developed a selector module to measure the D-FF. These measurements showed that the D-FF successfully operated at 80 Gbit/s, which is almost twice the speed reported to date.     

一种砷化镓HBT高速预分频器的设计

介绍了一种采用砷化镓HBT工艺实现的数字静态除8高速预分频器。该预分频器采用D触发器高速分频和多级供电驱动电路结构。测试结果表明,最高工作频率达到18GHz。预分频器芯片在5V的电源电压下的静态电流为85mA。     

A 1.75-GHz/3-V dual-modulus divide-by-128/129 prescaler in0.7-μm CMOS

A dual-modulus divide-by-128/129 prescaler has been developed in a 0.7-μm CMOS technology. A new circuit technique enables the limitation of the high-speed section of the prescaler to only one divide-by-two flipflop. In that way, a dual-modulus prescaler with the same speed as an asynchronous divider can be obtained. The measured maximum input frequency of the prescaler is up to 2.65 GHz at 5 V power supply voltage. Running at a power supply of 3 V, the circuit consumes 8 mA at a minimum input frequency of 1.75 GHz     

Speed optimization of edge-triggered CMOS circuits for gigahertzsingle-phase clocks

In digital circuits, a transistor connected to a particular circuit node does not always load that node by a gate capacitance proportional to C_oxWL if the transistors connected to its source are turned off. Such an observation, illustrated in this paper by a detailed analysis of the Yuan-Svensson D-flip-flop (D-FF) can be used to advantage both in sizing the transistors and in developing better configurations. A glitch-free, general purpose, and faster D-FF is presented here which has complementary outputs and runs at frequencies from tens of hertz to a couple of gigahertz for a 1-μm CMOS technology. Measured maximum clock frequency of a divide-by-16 circuit is 2.65 GHz at 5 V supply, whereas that of a dual-modulus frequency prescaler, dividing by 64/65, goes up to 1.6 GHz at 5 V     

A high-speed multimodulus HBT prescaler for frequency synthesizerapplications

A high-speed variable modulus prescaler that divides the input clock frequency by 128 up to 255 with unit step increment has been implemented with heterojunction bipolar transistor (HBT) technology. A maximum operating frequency of 9.72 GHz with power consumption of 650 mW has been measured. The high-speed performance is attributed to the circuit design, which minimizes the critical path delay, and the intrinsic high-speed characteristics of HBT technology. The phase noise of the prescaler is important for frequency synthesizer applications. With 6.24-GHz input frequency, the phase noise was -110 dBc/Hz at 100-Hz offset frequency and -120 dBc at 1-kHz offset frequency. The noise floor decreases as the input frequency decreases. Phase noises of -125 dBc/Hz at 100-Hz offset and -135 dBc/Hz at 1-kHz offset were obtained for a 1.2-GHz input frequency     

A 40-GHz D-type flip-flop using AlGaAs/GaAs HBT's

We report master-slave D-type flip-flop (D-FF) circuit implemented with AlGaAs/GaAs HBT's. The fabricated HBT's had an f_T of 107 GHz and an f_max of 110 GHz. To maximize the speed, the logic swing and transistor size in the IC were optimized. In the D-FF, to facilitate the high-speed testing, a selector circuit was integrated on the same chip. As a result, the operation of this IC was confirmed up to 40 GHz, which is the highest speed in D-FF     

A 1-GHz/0.9-mW CMOS/SIMOX divide-by-128/129 dual-modulus prescalerusing a divide-by-2/3 synchronous counter

An extremely low-power CMOS/SIMOX divide-by-128/129 dual-modulus prescaler that operates at up to 1 GHz and dissipates 0.9 mW at a supply voltage of 1 V is presented. The prescaler is capable of 2-GHz performance with dissipation of 7.2 mW at 2 V. This superior performance is primarily achieved by using an advanced ultrathin-film CMOS/SIMOX process technology combined with a circuit configuration that uses a divide-by-2/3 synchronous counter. Using these same technologies, a single-chip CMOS phase-locked-loop (PLL) LSI that uses the developed prescaler was fabricated. It can operate at up to 2 GHz while dissipating only 8.4 mW at a supply voltage of 2 V. Even at a lower supply voltage of 1.2 V, 1-GHz operation can be obtained with a corresponding power consumption of 1.4 mW. These results indicate that the high-speed and very-low-power features of CMOS/SIMOX technology could have an important impact on the development of future personal communication systems     

Dual-modulus 127/128 FOM enhanced prescaler design in 0.35-/spl mu/m CMOS technology

The dual-modulus prescaler is a critical block in CMOS systems like high-speed frequency synthesizers. However, the design of high-moduli, high-speed, and low-power dual-modulus prescalers remains a challenge. To face the challenge, this paper introduces the idea of using transmission gates and pseudo-PMOS logic to realize the dual-modulus prescaler. The topology of the prescaler proposed is different from prior designs primarily in two ways: 1) it uses transmission gates in the critical path and 2) the D flip-flops (DFFs) used in the synchronous counter comprise pseudo-PMOS inverters and ratioed latches. A pseudo-PMOS logic-based DFF is introduced and used in the proposed prescaler design. Based on the proposed topology, a dual-modulus divide-by-127/128 prescaler is implemented in 0.35-/spl mu/m CMOS technology. It consumes 4.8 mW from a 3-V supply. The measured phase noise is -143.4 dBc/Hz at 600 kHz. The silicon area required is only 0.06 mm/sup 2/. There are no flip flops or logic gates in the critical path. This topology is suitable for high-speed and high-moduli prescaler designs. It reduces: 1) design complexity; 2) power consumption; and 3) input loading. Measurement results are provided. An improvement in the figure of merit is shown.     

15～17GHz高精度单片数控移相器的研制

采用南京电子器件研究所4英吋0.25μmGa AsPHEMT工艺技术,设计、制作Ku波段Ga AsMMIC六位数控移相器芯片,芯片尺寸为3mm×1.1mm×0.1mm。在15～17GHz设计频带内,该移相器具有优良的电性能,插入损耗小于9dB,移相精度(RMS)小于1°,输入输出电压驻波比小于1.4。     

A 16-GHz Triple-Modulus Phase-Switching Prescaler and Its Application to a 15-GHz Frequency Synthesizer in 0.18-μm CMOS

A triple-modulus phase-switching prescaler for high- speed operations is presented in this paper. By reversing the switching orders between the eight 45deg-spaced signals generated by the 8 : 1 frequency divider, the maximum operating frequency of the prescaler is effectively enhanced. With the triple-modulus switching scheme, a wide frequency covering range is achieved. The proposed prescaler is implemented in a 0.18-mum CMOS process, demonstrating a maximum operating frequency of 16 GHz without additional peaking inductors for a compact chip size. Based on the high-speed prescaler, a fully integrated integer-N frequency synthesizer is realized. The synthesizer operates at an output frequency from 13.9 to 15.6 GHz, making it very attractive for wideband applications in Ku-band. At an output frequency of 14.4 GHz, the measured sideband power and phase noise at 1-MHz offset are -60 dBc and -103.8 dBc/Hz, respectively. The fabricated circuit occupies a chip area of 1 mm² and consumes a dc power of 70 mW from a 1.8-V supply voltage     

High-speed architecture for a programmable frequency divider and adual-modulus prescaler

We present a prescaler architecture that is suitable for high-speed CMOS applications. We apply the architecture to a 4/5 and an 8/9 dual-modulus prescaler and obtain a measured maximum clock frequency of 1.90 GHz in a standard 0.8 μm CMOS bulk process. This is 13% faster than the traditional prescaler architecture keeping the same power consumption. We also apply the key part of the prescaler to a divide-by-N circuit reaching 1.75 GHz. This is three times faster than any previously reported CMOS implementation and comparable to GaAs implementations     

A Si bipolar 21-GHz/320-mW static frequency divider

A silicon bipolar divide-by-eight static frequency divider was developed. A state-of-the-art advanced borosilicate-glass self-aligned (A-BSA) transistor technology that has a cutoff frequency of 40 GHz at V_ce=1 V was applied. Optimum circuit and layout designs were carried out for high-speed/low-power operation. The single-ended input realized by an on-chip metal-insulator-metal (MIM) capacitor makes it easy to use in microwave applications. Ultrahigh-speed operation, up to 21 GHz, was realized, with 320-mW power dissipation from a single +5-V supply. The static frequency divider is a suitable prescaler for phase-locked oscillators (PLOs), completely covering microwave frequencies from L band through Ku band (1-18 GHz)     

A 1.2 GHz CMOS dual-modulus prescaler using new dynamic D-typeflip-flops

A 1.2 GHz dual-modulus prescaler IC fabricated with 0.8 μm CMOS technology is presented in this paper. The dual-modulus prescaler includes a synchronous counter (divide-by-4/5) and an asynchronous counter (divide-by-32). A new dynamic D-flip-flop (DFF) is developed for the high-speed synchronous counter. The maximum operating frequency of 1.22 GHz with power consumption of 25.5 mW has been measured at 5 V supply voltage     

Design and Analysis of Ultra Low Power True Single Phase Clock CMOS 2/3 Prescaler

In this paper the power consumption and operating frequency of true single phase clock (TSPC) and extended true single phase clock (E-TSPC) frequency prescalers are investigated. Based on this study a new low power and improved speed TSPC 2/3 prescaler is proposed which is silicon verified. Compared with the existing TSPC architectures the proposed 2/3 prescaler is capable of operating up to 5 GHz and ideally, a 67% reduction of power consumption is achieved when compared under the same technology at supply voltage of 1.8 V. This extremely low power consumption is achieved by radically decreasing the sizes of transistors, reducing the number of switching stages and blocking the power supply to one of the D flip-flops (DFF) during Divide-by-2 operation. A divide-by-32/33 dual modulus prescaler implemented with this 2/3 prescaler using a Chartered 0.18 $mu$m CMOS technology is capable of operating up to 4.5 GHz with a power consumption of 1.4 mW.      

Design and Optimization of the Extended True Single-Phase Clock-Based Prescaler

The power consumption and operating frequency of the extended true single-phase clock (E-TSPC)-based frequency divider is investigated. The short-circuit power and the switching power in the E-TSPC-based divider are calculated and simulated. A low-power divide-by-2/3 unit of a prescaler is proposed and implemented using a CMOS technology. Compared with the existing design, a 25% reduction of power consumption is achieved. A divide-by-8/9 dual-modulus prescaler implemented with this divide-by-2/3 unit using a 0.18-mum CMOS process is capable of operating up to 4 GHz with a low-power consumption. The prescaler is implemented in low-power high-resolution frequency dividers for wireless local area network applications     

A 250-Mb/s, 700-mW, 32-highway×8-b S/P converter LSI withcross-access memory

A multihighway serial/parallel (S/P) converted LSI chip suitable for the broadband Integrated Services Digital Network (B-ISDN) node interface is presented. The chip, fabricated with 0.8-μm BiCMOS technology, handles 32-highway×8 b of S/P, P/S conversion at up to 250 Mb/s and has a power dissipation of 700 mW. The chip features cross-access memory and a current-cut-type CMOS/ECL interface circuit. Each of these features is described and evaluated. A newly developed BiNMOS-type D-flip-flop (D-FF) is used to speed up the cross-access memory and is compared to a CMOS D-FF     

一种超低功耗5.8GHz双模前置分频器设计

基于目前流行的TSPC高速电路,利用TSMC90nm 1P9M 1.2V CMOS工艺设计了高速、低压、低功耗32/33双模前置分频器,其适用于WLAN IEEE802.11a通信标准。运用Mentor Graphics Eldo对该电路进行仿真,仿真结果显示,工作在5.8GHz时功耗仅0.8mW,电路最高的工作频率可达到6.25GHz。